WO2007132425A1 - Dispositif laser à semi-conducteur à émission par la surface à cascade quantique et procédé de fabrication d'un dispositif laser à semi-conducteur - Google Patents

Dispositif laser à semi-conducteur à émission par la surface à cascade quantique et procédé de fabrication d'un dispositif laser à semi-conducteur Download PDF

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Publication number
WO2007132425A1
WO2007132425A1 PCT/IB2007/051825 IB2007051825W WO2007132425A1 WO 2007132425 A1 WO2007132425 A1 WO 2007132425A1 IB 2007051825 W IB2007051825 W IB 2007051825W WO 2007132425 A1 WO2007132425 A1 WO 2007132425A1
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WO
WIPO (PCT)
Prior art keywords
quantum cascade
cascade laser
semiconductor
laser device
stack
Prior art date
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Ceased
Application number
PCT/IB2007/051825
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English (en)
Inventor
Gerhard Koops
Rob Van Dalen
Philippe Meunier-Beillard
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NXP BV
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NXP BV
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Filing date
Publication date
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Publication of WO2007132425A1 publication Critical patent/WO2007132425A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3427—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in IV compounds

Definitions

  • the invention relates to a semiconductor laser device and method of manufacturing a semiconductor laser device.
  • Diode lasers comprise active region materials of which the bandgap essentially determines, and limits, the lasing wavelength.
  • the lasing wavelength of a quantum cascade laser is essentially determined by quantum confinement, i.e. by the thickness of the layers of active regions, rather than by the bandgap of active region material.
  • semiconductor laser devices may be edge-emitting or surface-emitting lasers (SELs).
  • Edge-emitting semiconductor lasers output their radiation parallel to the wafer or substrate surface, while in SELs, the radiation is output perpendicular to the wafer or substrate surface.
  • SEL vertical cavity surface emitting laser
  • the VCSEL structure usually consists of an active (gain) region sandwiched between two distributed Bragg reflector (DBR, or stack) mirrors. Other types of VCSELs sandwich the active region between metal mirrors.
  • DBR distributed Bragg reflector
  • the known quantum cascade lasers comprise a multiplicity of identical units, each unit comprising an active region and an injector/relaxation region. An upper and at least one lower energy level is associated with each active region. Under an applied field, charge carriers (typically electrons) migrate from a lower energy level of a given active region through an injector/relaxation region to the upper energy level of the adjacent downstream active region, followed by a radiative transition from the upper level to a lower level of the active region, then proceeding through an injector/relaxation region into the next active region, and so on.
  • charge carriers typically electrons
  • each charge carrier that is introduced into the relevant portion of the quantum cascade laser ideally undergoes a multiplicity of (laser) transitions (corresponding to the number of repeat units), each such (laser) transition resulting in an emission of a photon of a certain wavelength, which is typically in the infrared range (e.g. 3-13 ⁇ m).
  • a known quantum cascade laser device is shown in Fig. 1.
  • a mesa is provided on a first doped silicon layer, which is used for contacting a first side of the quantum cascade laser device via a bottom electrode.
  • the mesa comprises a quantum cascade laser stack of, for example, alternating Si/SiGe or Ge/SiGe layers, on which a top electrode layer is provided for contacting a second side of the quantum cascade laser device.
  • a quantum cascade laser stack of, for example, alternating Si/SiGe or Ge/SiGe layers, on which a top electrode layer is provided for contacting a second side of the quantum cascade laser device.
  • radiation is emitted in a direction perpendicular to a side surface of the mesa and parallel to a top surface of the silicon substrate.
  • the radiation emitted by these types of quantum cascade lasers is in the range of the chemical fingerprints of a lot of chemical and biological substances.
  • the quantum cascade lasers may be employed advantageously as radiation sources for absorption spectroscopy of gases and pollutants.
  • there is a need for an increased output power of the quantum cascade laser in applications with a large sensing range for example for remote sensing of gases and vapors, such as environmental (pollution) detection and security applications (e.g. anthrax detection).
  • Such a quantum cascade laser which has an increased output power, can also beneficially be applied in other applications such as those that include cruise control in conditions of poor visibility, collision-avoidance radar, industrial-process control and medical diagnostics such as breath analyzers.
  • the power density of the side emitting quantum cascade laser device is proportional to the perimeter of the mesa, as seen in projection on the silicon substrate, the power of this device can be increased at the cost of a more than proportional increase of substrate area.
  • a proportional increase of substrate area is achieved by a quantum cascade laser device that emits the laser beam perpendicular to the substrate.
  • US 6,560,259 discloses a high-power, quantum cascade laser device, including a method for fabricating it, that emits the laser beam perpendicular to the substrate surface.
  • This quantum cascade laser is a modified unipolar quantum cascade laser structure that incorporates grating-coupled, surface-emitting, and unstable resonance cavities.
  • the interaction of wave beams, traveling parallel to the surface of the substrate, with a grating structure produces first and second order Bragg diffraction.
  • the first order Bragg diffraction couples the laser light into the substrate surface normal direction for surface-emitted laser output.
  • a disadvantage of this quantum cascade laser is that the grating structure and the mirror action of the Bragg diffraction causes energy losses thereby decreasing the power efficiency of the quantum cascade laser. It is therefore an object of the invention to provide a quantum cascade laser device, with an improved power efficiency.
  • the invention is defined by the independent claims.
  • Advantageous embodiments are defined by the dependent claims.
  • the quantum cascade laser device is provided in a semiconductor substrate, which has a top surface, and comprises a stack of semiconductor quantum cascade laser layers with a side surface that exposes a side of each semiconductor quantum cascade layer.
  • the laser device emits a light beam in a direction substantially perpendicular to the side surface of the laser device, which side surface is essentially parallel to the top surface of the semiconductor substrate.
  • the light beam inside the laser device is not reflected into another direction before it is emitted from the laser device in a direction substantially perpendicular to the top surface of the semiconductor substrate.
  • the power loss of the laser device is reduced considerably, thereby improving the power efficiency of the device.
  • the stack of semiconductor quantum cascade laser layers is provided in a trench in the semiconductor substrate, wherein the side surface of the stack of semiconductor quantum cascade laser layers is provided along the perimeter of the trench.
  • This embodiment advantageously employs the trench, which is a well-known and simple feature in semiconductor devices, to provide for a laser device in which the light beam is emitted in a direction substantially perpendicular to the top surface of the semiconductor substrate.
  • the stack of semiconductor quantum cascade laser layers is provided in between a first semiconductor contact layer and a second semiconductor contact layer.
  • the first and second semiconductor contact layers confine the stack of semiconductor quantum cascade laser layers, which is the region where the laser action is initiated.
  • a top electrode layer extends over the stack of semiconductor quantum cascade laser layers.
  • the top electrode layer provides for an electrical contact to the stack of semiconductor quantum cascade laser layers.
  • the laser device is electrically contacted at the top surface of the substrate on a first side via the semiconductor substrate and on a second side, opposite to the first side, via the top electrode layer.
  • the electrical contacts at the top surface of the semiconductor substrate provide for a relatively simple electrical connection that is compatible with electrical connections to other devices on the substrate.
  • a method of manufacturing a quantum cascade laser device comprises the steps of: providing a trench in a semiconductor substrate; providing a stack of semiconductor quantum cascade laser layers on exposed surfaces of the trench and of the semiconductor substrate; depositing a top electrode layer on the stack of semiconductor quantum cascade laser layers, thereby filling the remainder of the trench; and removing portions of the top electrode layer and of the stack of semiconductor quantum cascade laser layers, thereby exposing a side surface of the stack of semiconductor quantum cascade laser layers.
  • the method further comprises the steps of providing electrical contacts to the substrate and the top electrode layer.
  • the electrical contact is advantageously provided on the top surface of the substrate, which is compatible with standard semiconductor processing.
  • the step of providing a stack of semiconductor quantum cascade laser layers comprises an epitaxial growth step that provides for, in that order, a first semiconductor contact layer, the stack of semiconductor quantum cascade laser layers and a second semiconductor contact layer.
  • the stack of semiconductor quantum cascade laser layers is provided in the trench in a conformal way and with one process step the first and second semiconductor contact layers and the stack of semiconductor quantum cascade laser layers are formed, which is the region where the laser action is initiated.
  • the first and the semiconductor contact layers comprise silicon
  • the top electrode layer comprises polysilicon.
  • Fig. 1 is a diagrammatic cross-sectional view of an embodiment of a quantum cascade laser device according to the prior art
  • Fig. 2 is a diagrammatic cross-sectional view of an embodiment of a quantum cascade laser device according to the invention
  • Fig. 3 is a schematic top view of an embodiment of a quantum cascade laser device according to the invention.
  • Figs. 4-9 are diagrammatic cross-sectional views of an embodiment of a method of manufacturing a quantum cascade laser device according to the invention.
  • Fig. 1 shows a diagrammatic cross-sectional view of a known quantum cascade laser device 10.
  • the mesa 7 comprises a quantum cascade laser stack 4 of, for example, alternating Si/SiGe or Ge/SiGe layers, on which a second doped silicon layer 5 and a top electrode layer 6 are provided.
  • radiation L is emitted in a direction perpendicular to the side surface of the mesa 7 and parallel to the top surface of the silicon substrate 1.
  • the power density of the quantum cascade laser device 10 can be increased by a proportional increase of the perimeter of the mesa 7 as seen in projection on the silicon substrate 1.
  • an increase of the power of the quantum cascade laser device 10 costs a more than proportional increase of substrate area.
  • FIG. 2 shows a diagrammatic cross-sectional view of an embodiment of a quantum cascade laser device 100 according to the invention.
  • a trench is provided in a, in this case, silicon substrate 11.
  • the trench is filled with, in that order, a first doped silicon layer 12, a stack of quantum cascade laser layers 14, a second doped silicon layer 15, and a polysilicon layer 16.
  • the first doped silicon layer 12 is electrically connected to a first contact 17 via the silicon substrate 11, and the second doped silicon layer 15 is electrically connected to a second contact 18, via the polysilicon layer 16.
  • Fig. 3 shows a schematic top view of an embodiment of a quantum cascade laser device 101.
  • a 3x3 array of the quantum cascade laser device 101 is shown in the silicon substrate 11, wherein each quantum cascade laser device 101 is shaped as a square.
  • the square shape is not essential, for example a rectangular shape is also possible.
  • a top surface of the polysilicon layer 16 is surrounded by the second doped silicon layer 15, which is surrounded by the side surface 13 of the stack of quantum cascade laser layers 14, which is surrounded by a side region of the first doped silicon layer 12.
  • Increasing the area of the square occupied by the quantum cascade laser device 101 proportionally increases the power density of the quantum cascade laser device 101.
  • Figs. 4 to 9 illustrate cross-sectional views of an embodiment of a method of manufacturing a quantum cascade laser device 100 according to the invention.
  • a hard mask layer 21 of, for example, silicon oxide is deposited on the silicon substrate 11.
  • a window 22 is formed in the hard mask layer 21 by using standard lithographic and etching techniques.
  • a trench 23 is formed in the silicon substrate 11 using a standard etching technique in which the hard mask layer 21 defines the region where the trench 23 is formed.
  • an epitaxial growth step forms, in that order, a first doped silicon layer 12, a stack of quantum cascade laser layers 14 and a second doped silicon layer 15, as is shown in Fig. 7.
  • a further trench 24 remains, because the trench 23 is not filled entirely.
  • the stack of quantum cascade laser layers 14 comprises, for example, alternating silicon and silicon germanium layers in which parameters such as, for example, the thickness of each layer and the germanium content may be varied to obtain an optimum quantum cascade laser device.
  • a polysilicon layer 16 is deposited which fills the further trench 24, as is shown in Fig. 8.
  • a planarization step is applied, for example a chemical mechanical polishing technique, which planarizes the surface of the quantum cascade laser device 100 and exposes a side surface 13 of the stack of quantum cascade laser layers 14, as is shown in Fig. 9.
  • an isolation layer 20, a first contact 17 and a second contact 18 are formed using standard techniques, resulting in the stack of quantum cascade laser device 100 as is shown in Fig. 2.
  • the invention provides a quantum cascade laser device in a semiconductor substrate, which quantum cascade laser device comprises a plurality of semiconductor layers having a side surface that exposes a side of each semiconductor layer.
  • the quantum cascade laser device emits a light beam in a direction substantially perpendicular to the side surface of the quantum cascade laser device, which side surface is essentially parallel to a top surface of the semiconductor substrate.
  • the power loss of the quantum cascade laser device is reduced considerably, because the light beam is not diffracted or reflected before it is emitted from the quantum cascade laser device, which improves the power efficiency of the quantum cascade laser device.
  • the invention further provides a method of manufacturing such a quantum cascade laser device.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un dispositif laser à cascade quantique (100, 101) monté dans un substrat semi-conducteur (11). Le dispositif laser à cascade quantique (100) comprend une pluralité de couches semi-conductrices (14) pourvues d'une surface latérale (13) qui expose un côté de chaque couche semi-conductrice. Le dispositif laser à cascade quantique (100, 101) émet un faisceau lumineux (L) dans une direction sensiblement perpendiculaire à la surface latérale (13) du dispositif laser à cascade quantique (100, 101), laquelle surface latérale (13) est pratiquement parallèle à une surface supérieure du substrat semi-conducteur (11). La perte de puissance du dispositif laser à cascade quantique (100, 101) est considérablement réduite du fait que le faisceau lumineux (L) n'est pas diffracté ou réfléchi avant son émission par le dispositif laser à cascade quantique (100, 101), ce qui permet d'améliorer le rendement énergétique du dispositif laser à cascade quantique (100, 101). Par ailleurs, l'invention concerne un procédé de fabrication d'un dispositif laser à cascade quantique (100, 101).
PCT/IB2007/051825 2006-05-17 2007-05-14 Dispositif laser à semi-conducteur à émission par la surface à cascade quantique et procédé de fabrication d'un dispositif laser à semi-conducteur Ceased WO2007132425A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06114100.8 2006-05-17
EP06114100 2006-05-17

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WO2007132425A1 true WO2007132425A1 (fr) 2007-11-22

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10084282B1 (en) 2017-08-14 2018-09-25 The United States Of America As Represented By The Secretary Of The Air Force Fundamental mode operation in broad area quantum cascade lasers
US11031753B1 (en) 2017-11-13 2021-06-08 The Government Of The United States Of America As Represented By The Secretary Of The Air Force Extracting the fundamental mode in broad area quantum cascade lasers
US20230137340A1 (en) * 2021-10-29 2023-05-04 Samsung Electronics Co., Ltd. Pattern formation method and semiconductor device fabrication method using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0951076A2 (fr) * 1998-04-17 1999-10-20 Hewlett-Packard Company Réflecteurs enterrés dans un matériau épitaxial pour des dispositifs émetteurs de lumière et méthode de fabrication
JP2001308458A (ja) * 2000-04-27 2001-11-02 Sony Corp 半導体発光素子およびその製造方法ならびに半導体装置およびその製造方法
US6560259B1 (en) * 2000-05-31 2003-05-06 Applied Optoelectronics, Inc. Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity
EP1734625A1 (fr) * 2005-06-15 2006-12-20 Avago Technologies ECBU IP (Singapore) Pte. Ltd. Laser à semi-conducteur à base de nitrure à jonction PN à canal transversal obtenu par étape unique de surcroissance latérale épitaxiale

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0951076A2 (fr) * 1998-04-17 1999-10-20 Hewlett-Packard Company Réflecteurs enterrés dans un matériau épitaxial pour des dispositifs émetteurs de lumière et méthode de fabrication
JP2001308458A (ja) * 2000-04-27 2001-11-02 Sony Corp 半導体発光素子およびその製造方法ならびに半導体装置およびその製造方法
US6560259B1 (en) * 2000-05-31 2003-05-06 Applied Optoelectronics, Inc. Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity
EP1734625A1 (fr) * 2005-06-15 2006-12-20 Avago Technologies ECBU IP (Singapore) Pte. Ltd. Laser à semi-conducteur à base de nitrure à jonction PN à canal transversal obtenu par étape unique de surcroissance latérale épitaxiale

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10084282B1 (en) 2017-08-14 2018-09-25 The United States Of America As Represented By The Secretary Of The Air Force Fundamental mode operation in broad area quantum cascade lasers
US11031753B1 (en) 2017-11-13 2021-06-08 The Government Of The United States Of America As Represented By The Secretary Of The Air Force Extracting the fundamental mode in broad area quantum cascade lasers
US20230137340A1 (en) * 2021-10-29 2023-05-04 Samsung Electronics Co., Ltd. Pattern formation method and semiconductor device fabrication method using the same
US12396150B2 (en) * 2021-10-29 2025-08-19 Samsung Electronics Co., Ltd. Pattern formation method and semiconductor device fabrication method using the same

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