WO2007138063A1 - Procédé de réduction de la rugosité de surface d'un substrat semiconducteur - Google Patents

Procédé de réduction de la rugosité de surface d'un substrat semiconducteur Download PDF

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Publication number
WO2007138063A1
WO2007138063A1 PCT/EP2007/055211 EP2007055211W WO2007138063A1 WO 2007138063 A1 WO2007138063 A1 WO 2007138063A1 EP 2007055211 W EP2007055211 W EP 2007055211W WO 2007138063 A1 WO2007138063 A1 WO 2007138063A1
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WIPO (PCT)
Prior art keywords
germanium
mono
silicon
group
semiconductor material
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Ceased
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PCT/EP2007/055211
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English (en)
Inventor
Frederik Leys
Renaud Bonzom
Matty Caymax
Roger Loo
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Umicore NV SA
Interuniversitair Microelektronica Centrum vzw IMEC
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Umicore NV SA
Interuniversitair Microelektronica Centrum vzw IMEC
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Publication of WO2007138063A1 publication Critical patent/WO2007138063A1/fr
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Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure

Definitions

  • the invention relates to a method for improving the surface roughness of a semiconductor substrate.
  • RMS root mean square
  • Roughness is measured in different ways for different purposes .
  • the roughness can be measured by an Atomic Force Microscope (AFM) .
  • the atomic force microscope (AFM) is a very high-resolution type of scanning probe microscope. It consists of a cantilever (probe) with a sharp tip at its end that is used to scan the substrate surface.
  • the probe is typically silicon or silicon nitride with a tip radius of curvature on the order of nanometers.
  • the Van der Waals force between the tip and the sample leads to a deflection of the cantilever according to Hooke's law.
  • the deflection is measured using a laser spot reflected from the top of the cantilever into an array of photodiodes .
  • the invention aims to provide a method to improve the semiconductor substrate surface roughness.
  • a method of the invention for reducing the roughness of a semiconductor substrate surface comprises the steps of: providing a semiconductor substrate, the surface of which comprises (or consists of) a group IV mono-crystalline semiconductor material, and depositing, on said group IV mono-crystalline semiconductor material, a layer of substantially the same group IV mono-crystalline semiconductor material, by a deposition technique suitable for, or adapted for using nitrogen and/or at least one noble gas as carrier gas.
  • said provided semiconductor substrate can consist of a group IV mono- crystalline semiconductor material.
  • said provided semiconductor substrate can consist of a stack of layers. More particularly, said provided semiconductor substrate can consist of a SOI (silicon on insulator) substrate, a SGOI (silicon-germanium on insulator) substrate, a Ge on Si (germanium on silicon) substrate, or a GOI (germanium on insulator) substrate.
  • SOI silicon on insulator
  • SGOI silicon-germanium on insulator
  • Ge on Si germanium on silicon
  • GOI germanium on insulator
  • IV mono-crystalline semiconductor material is silicon, germanium, silicon germanium, silicon carbon or silicon germanium carbon.
  • said group IV mono-crystalline semiconductor material is germanium.
  • said deposition technique is preferably a chemical vapor deposition technique (suitable for, or adapted for using nitrogen and/or at least one noble gas as carrier gas) .
  • Examples of chemical vapor deposition techniques that can be used are: LPCVD (low pressure chemical vapor deposition, APCVD (atmospheric pressure chemical vapor deposition) , ALCVD (atomic layer chemical vapor deposition, also referred to ALD for atomic layer deposition), RTCVD (rapid thermal chemical vapor deposition, VPE (vapor phase epitaxy) , and UHVCVD (ultrahigh vacuum chemical vapor deposition) .
  • LPCVD low pressure chemical vapor deposition
  • APCVD atmospheric pressure chemical vapor deposition
  • ALCVD atomic layer chemical vapor deposition, also referred to ALD for atomic layer deposition
  • RTCVD rapid thermal chemical vapor deposition
  • VPE vapor phase epitaxy
  • UHVCVD ultrahigh vacuum chemical vapor deposition
  • helium, argon and/or nitrogen is/are the carrier gas (es) . More preferably, argon and/or nitrogen is/are the carrier gas (es) . And even more preferably, nitrogen is the carrier gas.
  • the temperature during said deposition step is comprised between (about) 350 0 C and (about) 800 0 C, preferably between (about) 350 0 C and (about) 450 0 C, and more particularly can be set at (about) 425°C.
  • germanium is said group IV mono-crystalline semiconductor material
  • germane, digermane, germane tetrachloride, and/or dimethylamino germanium trichloride can be used as precursor gas (es) .
  • Said precursor gas (es) can be diluted in hydrogen; for example a 1 vol.% germane diluted in hydrogen can be used.
  • Said gas consisting of 1 vol.% germane diluted in hydrogen can be provided at a flow rate comprised between 50 seem and 1000 seem, preferably between 100 seem and 300 seem.
  • the invention provides a method for reducing the surface roughness of a semiconductor substrate surface comprising the steps of:
  • the second roughness may be between about 0.05 nm RMS and about 0.40 nm RMS, between about 0.05 nm RMS and about 0.30 nm RMS, between about 0.05 nm RMS and about 0.20 nm RMS, and between about 0.05 nm RMS and about 0.15 nm RMS.
  • the group IV mono-crystalline material may be silicon, germanium, silicon germanium, silicon carbon or silicon germanium carbon.
  • the step of depositing may be performed by epitaxial chemical vapor deposition techniques, like LPCVD (low pressure chemical vapor deposition, (APCVD atmospheric chemical vapor deposition) , ALCVD (atomic layer chemical vapor deposition) , and any epitaxial chemical vapor deposition technique using a carrier gas.
  • epitaxial chemical vapor deposition techniques like LPCVD (low pressure chemical vapor deposition, (APCVD atmospheric chemical vapor deposition) , ALCVD (atomic layer chemical vapor deposition) , and any epitaxial chemical vapor deposition technique using a carrier gas.
  • the step of depositing may be done at a temperature between about 350 0 C and about 800 0 C, between about 350 0 C and about 600°C, between about 400°C and about 550°C.
  • a preferable temperature may be about 425°C.
  • germane may be used as precursor gas.
  • the GeH 4 flow may be between about 50 seem and about 1000 seem, between about lOOsccm and about 500 seem, between about 100 seem and about 300 seem.
  • the group IV mono-crystalline material may be germanium, a germane flow of about 250 seem may be used as precursor gas, the temperature may be about 425°C, and the nitrogen flow may be about 20 slm.
  • a method for reducing (or for improving) the roughness of a semiconductor substrate surface comprising the steps of:
  • a semiconductor substrate the surface of which comprises (or consists of) a group IV mono-crystalline semiconductor material, and - depositing, on said group IV mono-crystalline semiconductor material, a layer of (substantially) the same group IV mono- crystalline semiconductor material, by a deposition technique (suitable for, or adapted for) using nitrogen and/or at least one noble gas as carrier gas .
  • a method for reducing the roughness of a semiconductor substrate surface comprises the steps of:
  • a deposition technique preferably an epitaxial chemical vapor deposition technique that uses nitrogen and/or at least one of the noble gases as carrier gas.
  • a method for reducing the roughness of a semiconductor substrate surface comprises the steps of: providing a semiconductor substrate, the surface of which consists of germanium, and depositing, on said Ge surface a layer of Ge, by a deposition technique (suitable for or adapted for) (preferably an epitaxial chemical vapor deposition technique) using nitrogen and/or one or more of the noble gases.
  • the entire surface of said semiconductor substrate can comprise or can consist of said group IV mono-crystalline semiconductor material .
  • only part of the surface (possibly different areas or locations) of said semiconductor substrate can comprise or can consist of said group IV mono-crystalline semiconductor material.
  • Said semiconductor substrate can be made of (or can consist of) one single material which comprises (or preferably consists of) a group IV mono-crystalline semiconductor material.
  • said semiconductor substrate (or active area) can be a stack of layers, the upper layer (i.e. the layer exposed to the gases) comprising (or consisting of) a group IV mono- crystalline semiconductor material.
  • said semiconductor substrate can be a SOI substrate (silicon on insulator substrate) , or a SGOI substrate (silicon-germanium on insulator substrate) , and preferably is a GeOI substrate (germanium on insulator substrate) .
  • said group IV mono-crystalline semiconductor material is silicon, germanium, silicon germanium, silicon carbon or silicon germanium carbon.
  • the expression "substantially the same” refers to two materials exhibiting at least 98%, more preferably 99% identity having regard to their composition, the remaining 2% or 1% respectively being regarded as contamination.
  • said group IV mono-crystalline semiconductor material is germanium, silicon germanium, or silicon germanium carbon. More particularly, said silicon germanium, or said silicon germanium carbon comprises mainly (i.e. more than 50%) germanium.
  • said group IV mono-crystalline semiconductor material is germanium.
  • the roughness can be drastically improved (or reduced) .
  • the roughness obtained by carrying out a method of the invention (also referred to as the second roughness) can be less than (about) 0.3 nm RMS, or even less than (about) 0.2 nm RMS.
  • the step of depositing said same group IV mono-crystalline semiconductor material is performed by any deposition technique (suitable for or adapted for) using a carrier gas.
  • VPE vapor phase epitaxy
  • UHVCVD ultrahigh vacuum chemical vapor deposition
  • MBE with gas sources i.e. MBE adapted for using carrier gases (also referred to as GSMBE)
  • GSMBE carrier gases
  • any noble gas can be used, any mixture of 2 or more noble gases can be used, or any mixture of nitrogen with 1, 2 or more noble gases can be used.
  • the noble gases used are helium and/or argon. More preferably, argon is used as carrier gas. [056] Even more preferably, in a method of the invention, nitrogen is used as carrier gas.
  • the flow (rate) of nitrogen and/or of noble gas (es) used as carrier gas (es) is lower than 100 slm
  • the step of depositing said same group IV mono- crystalline semiconductor material is performed at a temperature comprised between (about) 350 0 C and (about) 800 0 C, more preferably between (about) 350 0 C and (about) 600 0 C, more preferably between (about) 350 0 C and (about) 500 0 C, and even more preferably between (about) 350 0 C and (about) 450°C.
  • germane-containing gas for depositing a germanium layer, any suitable germanium-containing gas can be used.
  • germane germane (GeH 4 )
  • digermane Ge 2 H 6
  • germane tetrachloride GeCl 4
  • DMAGeCl dimethylamino germanium trichloride
  • germane is used, in particular germane diluted in hydrogen, such as a 1 vol.% GeH 4 in hydrogen.
  • germane (GeH 4 ) is preferably used as precursor gas.
  • the GeH 4 partial pressure can be between (about) 1.33E-6 mbar and (about) 666.6 mbar ((about) 1E-6 torr and (about) 500 torr), preferably between (about) 1.33E-4 mbar and (about) 666.6 mbar ((about) 1E-4 torr and (about) 500 torr), and more preferably between (about) 1.33E-4 mbar and (about) 0.0266 mbar ((about) 1E-4 torr and (about) 0.02 torr) .
  • any suitable silicon and germanium- containing gas can be used.
  • at least one of the following silicon-containing gases can be used: silane (SiH 4 ) , disilane (Si2H 6 ) , trisilane (Si3H 8 ) , dichlorosilane (SiCl2H 2 ) , trichlorosilane (SiCIsH) , in combination with at least one of the following germanium-containing gases: germane (GeH 4 ) , digermane (Ge 2 H 6 ) , germane tetrachloride
  • SiH 3 GeH 3 GeH 3 (SiH 2 ) 2GeH 3 , SiH 2 (GeH 3 ) 2 , (GeH 3 ) 3SiH and/or (GeH 3 ) 4Si can also be used.
  • the precursor gas (es) can be provided at a partial pressure comprised between (about) 1.33E-6 mbar and (about) 666.6 mbar ((about) 1E-6 torr and (about) 500 torr), preferably between (about) 1.33E- 4 mbar and (about) 666.6 mbar ((about) 1E-4 torr and (about) 500 torr), and more preferably between (about) 1.33E-4 mbar and (about) 0.0266 mbar ((about) 1E-4 torr and (about) 0.02 torr) .
  • the precursor gas flow (rate) is preferably lower than (about) 1000 seem, more preferably lower than (about) 300 seem (seem being also referred to as standard cubic centimeters per minute) .
  • the precursor gas flow can be between (about) 50 seem and (about) 1000 seem, or between (about) 100 seem and (about) 500 seem, or between (about) 100 seem and (about) 300 seem.
  • the precursor gas flow (rate) is preferably lower than (about) 400 seem, more preferably lower than (about) 300 seem, even more preferably is (about) 250 seem, in particular when using 20 slm N 2 .
  • Germanium wafers were provided (4 inch (100) germanium wafers) .
  • the epitaxial layers were not doped and were grown using a mixture of hydrogen and germane (1 vol.% GeH 4 in hydrogen) as gas precursor, at a flow rate of 250 seem, with hydrogen or nitrogen as carrier gas, at a flow rate of 20 slm
  • the epitaxial layer surface morphology was characterized with a Nanoscope IVa Dimension 3000; tapping mode.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé permettant d'améliorer la rugosité de surface d'un substrat semiconducteur. Ce procédé consiste: à prendre un substrat semiconducteur dont la surface comprend un matériau semiconducteur monocristallin de groupe IV, et à déposer sur ce matériau semiconducteur une couche de matériau semiconducteur monocristallin sensiblement du même groupe IV par une technique de dépôt utilisant de l'azote et/ou au moins un gaz noble comme gaz porteur.
PCT/EP2007/055211 2006-05-26 2007-05-29 Procédé de réduction de la rugosité de surface d'un substrat semiconducteur Ceased WO2007138063A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80866406P 2006-05-26 2006-05-26
US60/808,664 2006-05-26

Publications (1)

Publication Number Publication Date
WO2007138063A1 true WO2007138063A1 (fr) 2007-12-06

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2474643A1 (fr) * 2011-01-11 2012-07-11 Imec Procédé direct de dépôt des couches de germanium

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577286A (en) * 1967-10-11 1971-05-04 Ibm Semiconductor preparation and deposition process
US20030211712A1 (en) * 2002-05-09 2003-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects
US20040175893A1 (en) * 2003-03-07 2004-09-09 Applied Materials, Inc. Apparatuses and methods for forming a substantially facet-free epitaxial film
EP1464725A2 (fr) * 2003-04-05 2004-10-06 Rohm and Haas Electronic Materials, L.L.C. Composés de germanium utilisables dans des procédés de dépôt en phase vapeur
US20060086950A1 (en) * 2004-10-13 2006-04-27 Matty Caymax Method for making a passivated semiconductor substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577286A (en) * 1967-10-11 1971-05-04 Ibm Semiconductor preparation and deposition process
US20030211712A1 (en) * 2002-05-09 2003-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects
US20040175893A1 (en) * 2003-03-07 2004-09-09 Applied Materials, Inc. Apparatuses and methods for forming a substantially facet-free epitaxial film
EP1464725A2 (fr) * 2003-04-05 2004-10-06 Rohm and Haas Electronic Materials, L.L.C. Composés de germanium utilisables dans des procédés de dépôt en phase vapeur
US20060086950A1 (en) * 2004-10-13 2006-04-27 Matty Caymax Method for making a passivated semiconductor substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2474643A1 (fr) * 2011-01-11 2012-07-11 Imec Procédé direct de dépôt des couches de germanium
JP2012146981A (ja) * 2011-01-11 2012-08-02 Imec ゲルマニウム層の直接成長方法
US8530339B2 (en) 2011-01-11 2013-09-10 Imec Method for direct deposition of a germanium layer

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