WO2007141048A1 - Matériau à couche isolante pour la microélectronique - Google Patents

Matériau à couche isolante pour la microélectronique Download PDF

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Publication number
WO2007141048A1
WO2007141048A1 PCT/EP2007/005203 EP2007005203W WO2007141048A1 WO 2007141048 A1 WO2007141048 A1 WO 2007141048A1 EP 2007005203 W EP2007005203 W EP 2007005203W WO 2007141048 A1 WO2007141048 A1 WO 2007141048A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer material
carbon nanotubes
insulation layer
material according
microelectronics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2007/005203
Other languages
German (de)
English (en)
Inventor
Helmut Hermann
Gotthart Seifert
Christine TÄSCHNER
Ehrenfried Zschech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TU Dresden
Leibniz Institute for Solid State and Materials Research
Original Assignee
TU Dresden
Leibniz Institute for Solid State and Materials Research
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TU Dresden, Leibniz Institute for Solid State and Materials Research filed Critical TU Dresden
Priority to EP07785816A priority Critical patent/EP2027597A1/fr
Publication of WO2007141048A1 publication Critical patent/WO2007141048A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

Definitions

  • the invention relates to the fields of microelectronics and materials science and relates to an insulating layer material for microelectronics, which can be used for example in integrated circuits as a dielectric between copper interconnects.
  • SiO 2 can be applied by plasma-enhanced chemical vapor deposition (PE-CVD).
  • PE-CVD plasma-enhanced chemical vapor deposition
  • the disadvantages of these dielectrics are the very high production costs.
  • the degrees of porosity are very high at 50 to 80% and the pores are unfavorably open and for the most part interconnected.
  • the pore size distribution is not sufficiently well controlled. There may be pores and channels of interconnected pores, which lead to the electrical connection of adjacent interconnects, which should be separated from the dielectric. This can lead to the failure of the chip.
  • PTFE layers can be made from surfactant-stabilized aqueous microemulsions.
  • H atoms H atoms (HSQ) or on the amorphous Si-O networks (MSQ), the CH 3 -
  • the special MSQ material LKD-5109 with dynamic dispensing can be applied to a Si substrate in a TEL ACT 8 spin track.
  • Such materials reach k values of over 2.0 with an average pore size of 2 nm. The pores are probably not connected to each other.
  • DE 102 53 855.7 A1 discloses an insulation layer material for integrated circuits in damascene architecture, which consists of fullerenes separated from one another by molecules or molecular groups. The molecules or molecular groups are connected to the fullerenes via chemical and / or physical interactions over at least two sites.
  • This insulation layer material has k values of ⁇ 4.0 with an adjustable pore size of ⁇ 2.0 nm.
  • carbon nanotubes are used as interconnects in circuits (K. Banerjee, Proc. 22th Advanced Metallization Conf., Colorado Springs, CO, Sept. 27-29, 2005). Also, carbon nanotubes are used as sensors or actuators (US 20060084752 A).
  • fluorinated carbon nanotubes are known in which fluorine atoms are chemically bonded to the carbon atoms on the surface of the carbon nanotube, thereby achieving an electrically insulating state (G. Seifert, et al., Applied Physics Letters Vol. 77, No .9, (2000) 1313-1315).
  • the invention has for its object to provide an insulating layer material for microelectronics, which has a dielectric constant of k ⁇ 2 with good mechanical properties.
  • the microelectronic insulation layer material according to the invention consists of a multitude of fluorinated carbon nanotubes, which are connected by means of an adhesive at least selectively via physical and / or chemical bonds to form a network.
  • the fluorinated carbon nanotubes are constructed with the chemical composition C n F (1, 8 ⁇ n ⁇ 2.2).
  • the fluorine atoms are arranged on the surface of the carbon nanotubes.
  • the network has up to 10% by volume of carbon nanotubes.
  • the adhesive has reached the carbon nanotubes by means of deposition from the gas phase (vapor phase deposition).
  • the adhesive is arranged as a coating on the carbon nanotubes.
  • the adhesive is present in an amount of up to 20 vol .-%. It is also advantageous if the insulating layer material is used in integrated circuits.
  • a plurality of carbon nanotubes which have been connected to a network by fluorination and subsequent vapor deposition using an adhesive, are used as the insulating layer material for microelectronics.
  • fluorinated carbon nanotubes with the chemical composition C n F (1, 8 ⁇ n ⁇ 2.2) are used.
  • carbon nanotubes having chemically bonded fluorine atoms on their surface are used.
  • parylene-C parylene-D, parylene-F or parylene-N.
  • the insulating layer material is used in microelectronics in integrated circuits.
  • an insulation layer material for microelectronics which, on the one hand, has a comparatively very low dielectric constant and at the same time the good mechanical properties of the carbon nanotubes due to the high porosity.
  • the insulation layer material according to the invention can achieve dielectric constants of k ⁇ 2, while maintaining the strength of carbon nanotubes, which is necessary and sufficient in particular for the production of the integrated circuits under thermal stress.
  • the insulation layer material according to the invention is variably adjustable in terms of its properties and adjustable to the other conditions for circuit production and also during the use of the circuits. This variability is achievable by varying network parameters, such as the average length of the carbon nanotubes per unit volume, or by the type and / or amount of adhesive in the network.
  • fluorinated carbon nanotubes which have an electrically insulating effect, the insulating character of the network is enhanced.
  • the electrically insulating effect of the fluorinated carbon nanotubes is also detectable on the basis of the electronic state densities in the environment of Fermi energy. The determined state densities showed the position of the Fermi energy in the energy gap and a much wider range of the energy gap, both of which are characteristic of insulating materials.
  • One possibility of producing the insulation layer material according to the invention consists in the following method steps.
  • networks of unfluorinated carbon nanotubes are made. This can be done for example by deposition from the gas phase (CVD). Subsequently, the carbon nanotubes are fluorinated in a CF 4 plasma.
  • This network of fluorinated carbon nanotubes is still not very resilient and is slightly variable in its structure. Accordingly, then, for example, by deposition from the gas phase, the surface of the carbon nanotubes coated with an adhesive. The coating can be done partially or completely, depending on the type and amount of adhesive which is applied.
  • the adhesive leads to a stronger positive and non-positive connection between the network components and is now in its structure little changed and thus also mechanically much stronger load capacity.
  • this network according to the invention is significantly more resilient to tensile and compressive stresses occurring during its processing in, for example, integrated circuits and also during the life of the circuits, than conventional insulation layer materials for such applications.
  • Parylene-C Parylene-D
  • Parylene-F Parylene-N
  • Parylene is known to be an inert, hydrophobic, optically transparent, biocompatible, polymeric coating material with a wide range of industrial applications.
  • the coating is applied to the substrate in a vacuum by condensation from the gas phase as a pore-free and transparent polymer film.
  • virtually any substrate material such as.
  • metal, glass, paper, paint, plastic, ceramic, ferrite and silicones with Parylene coatable.
  • Due to the gaseous deposition coatings can be achieved with parylene in areas or structures that are not coatable with liquid-based processes, such as. Sharp edges and peaks or narrow and deep gaps. The latter is particularly advantageous for coating networks of carbon nanotubes.
  • parylenes which is a chain structure consisting of a sequence of (CH 2 - benzene ring - CH 2 -).
  • parylene-C a sequence of (CH 2 - benzene ring - CH 2 -).
  • parylene-D chlorine atoms
  • 10 g of commercially available single-walled carbon nanotubes, which are known to have been prepared, are known to be fluorinated with a CF 4 plasma.
  • This fluorination creates chemical bonds between the fluorine and the carbon atoms, with the fluorine atoms preferably bonding to the surface of the carbon nanotubes.
  • This treatment produces a mixture of metallically conductive, semiconducting and insulating carbon nanotubes.
  • a known method for the separation of semiconducting and metallically conductive carbon nanotubes is used to first strongly heat and oxidize the metallically conductive carbon nanotubes by an electric current in the known manner.
  • the resulting mixture of semiconducting and insulating fluorinated carbon nanotubes is also separated in a second step by an electric current, wherein the temperature of the mixture and the applied voltage are higher than in the first step.
  • the electric current now strongly heats the semiconducting carbon nanotubes and oxidizes them with the addition of oxygen. In this way, a heap of insulating fluorinated single-walled carbon nanotubes is generated.
  • the amount of insulating fluorinated single-walled carbon nanotubes produced from the 10 g starting material is 20 g.
  • the fluorinated carbon nanotubes of mass M CNT (20 g) are coated with parylene-C of mass M P , The coating is carried out in vacuo by condensation from the gas phase.
  • the mass ratio M CNT / M P By the mass ratio M CNT / M P , the relation of dielectric and mechanical and other properties is set. Increasing the mass ratio leads to the improvement of the dielectric constant while reducing the elastic constants. At the mass ratio of 1, a dielectric constant of 2.0 is achieved at a compression modulus of 6 GPa. As a result, a network has now been formed from the fluorinated carbon nanotubes, wherein the individual fluorinated carbon nanotubes are non-positively connected to one another at the contact surfaces by the parylene C adhesive.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'invention concerne les domaines de la microélectronique et des sciences des matériaux et concerne un matériau à couche isolante pour la microélectronique, lequel peut être utilisé comme diélectrique par exemple dans des circuits de commutation intégrés. L'invention a pour but d'indiquer un matériau à couche isolante pour la microélectronique, lequel comporte une constante diélectrique de k < 2 avec en même temps de bonnes propriétés mécaniques. Le but est atteint par un matériau à couche isolante pour la microélectronique, lequel se compose d'une pluralité de nanotubes de carbone fluorés, lesquels sont reliés en un réseau au moyen d'un agent adhésif au moins ponctuellement par l'intermédiaire de liaisons physiques et/ou chimiques.
PCT/EP2007/005203 2006-06-09 2007-06-07 Matériau à couche isolante pour la microélectronique Ceased WO2007141048A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07785816A EP2027597A1 (fr) 2006-06-09 2007-06-07 Matériau à couche isolante pour la microélectronique

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006027880.1 2006-06-09
DE102006027880A DE102006027880B4 (de) 2006-06-09 2006-06-09 Verwendung von Kohlenstoffnanoröhren als Isolationsschichtmaterial für die Mikroelektronik

Publications (1)

Publication Number Publication Date
WO2007141048A1 true WO2007141048A1 (fr) 2007-12-13

Family

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Family Applications (1)

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PCT/EP2007/005203 Ceased WO2007141048A1 (fr) 2006-06-09 2007-06-07 Matériau à couche isolante pour la microélectronique

Country Status (3)

Country Link
EP (1) EP2027597A1 (fr)
DE (1) DE102006027880B4 (fr)
WO (1) WO2007141048A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7732888B2 (en) 2007-04-16 2010-06-08 Qimonda Ag Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007035858A1 (de) * 2007-07-31 2009-02-05 Qimonda Ag Integrierte Schaltung, Verfahren zum Herstellen einer integrierten Schaltung, Speicherzellenarray, Speichermodul sowie Vorrichtung

Citations (2)

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Publication number Priority date Publication date Assignee Title
US6420092B1 (en) * 1999-07-14 2002-07-16 Cheng-Jer Yang Low dielectric constant nanotube
US20060073682A1 (en) * 2004-10-04 2006-04-06 International Business Machines Corporation Low-k dielectric material based upon carbon nanotubes and methods of forming such low-k dielectric materials

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WO2003013199A2 (fr) * 2001-07-27 2003-02-13 Eikos, Inc. Revetements conformes contenant des nanotubes de carbone
US6790790B1 (en) * 2002-11-22 2004-09-14 Advanced Micro Devices, Inc. High modulus filler for low k materials
WO2005120205A2 (fr) * 2004-02-13 2005-12-22 The Regents Of The University Of California Depot de reseaux nanotubulaires a transistor a temperature ambiante
US20050186378A1 (en) * 2004-02-23 2005-08-25 Bhatt Sanjiv M. Compositions comprising carbon nanotubes and articles formed therefrom

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US6420092B1 (en) * 1999-07-14 2002-07-16 Cheng-Jer Yang Low dielectric constant nanotube
US20060073682A1 (en) * 2004-10-04 2006-04-06 International Business Machines Corporation Low-k dielectric material based upon carbon nanotubes and methods of forming such low-k dielectric materials

Non-Patent Citations (3)

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Title
BENEDETTO A ET AL: "Carbon nanotubes/fluorinated polymers nanocomposite thin films for electrical contacts lubrication", SURFACE SCIENCE, NORTH-HOLLAND PUBLISHING CO, AMSTERDAM, NL, vol. 601, 11 April 2007 (2007-04-11), pages 3687 - 3692, XP007903283, ISSN: 0039-6028 *
KONSTANTIN N KUDIN ET AL: "Fluorinated single-wall carbon nanotubes", PHYSICAL REVIEW, B. CONDENSED MATTER, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 63, no. 4, 9 January 2001 (2001-01-09), pages 45413 - 1, XP007903282, ISSN: 0163-1829 *
SEIFERT GOTTHARD ET AL: "Molecular wires, solenoids, and capacitors by sidewall functionalization of carbon nanotubes", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 77, no. 9, 28 August 2000 (2000-08-28), pages 1313 - 1315, XP012027365, ISSN: 0003-6951 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7732888B2 (en) 2007-04-16 2010-06-08 Qimonda Ag Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and device

Also Published As

Publication number Publication date
DE102006027880A1 (de) 2007-12-13
DE102006027880B4 (de) 2008-11-27
EP2027597A1 (fr) 2009-02-25

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