WO2007147760A3 - Omr-sensor und anordnung aus solchen sensoren - Google Patents

Omr-sensor und anordnung aus solchen sensoren Download PDF

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Publication number
WO2007147760A3
WO2007147760A3 PCT/EP2007/055801 EP2007055801W WO2007147760A3 WO 2007147760 A3 WO2007147760 A3 WO 2007147760A3 EP 2007055801 W EP2007055801 W EP 2007055801W WO 2007147760 A3 WO2007147760 A3 WO 2007147760A3
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic
layer
arrangement
sensors
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2007/055801
Other languages
English (en)
French (fr)
Other versions
WO2007147760A2 (de
Inventor
Manfred Ruehrig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2007147760A2 publication Critical patent/WO2007147760A2/de
Publication of WO2007147760A3 publication Critical patent/WO2007147760A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/002—Antiferromagnetic thin films, i.e. films exhibiting a Néel transition temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/005—Thin magnetic films, e.g. of one-domain structure organic or organo-metallic films, e.g. monomolecular films obtained by Langmuir-Blodgett technique, graphene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

Aus Schichtsystemen mit wenigstens einer Polymerschicht gebildete Magnetsensoren sind bekannt. Bei einem solchen Schichtsystem ändert sich der elektrische Widerstand in Abhängigkeit vom Magnetfeld. Dabei sind im Allgemeinen nicht lineare Kennlinien vorhanden, die glockenförmig verlaufen können. Gemäß der Erfindung ist auf oder unter der wenigstens einen Polymerschicht ein zusätzliches magnetisches Schichtsystem angeordnet, das aufgrund seines Streufeldes eine magnetische Vorspannung der Kennlinie des Polymer-Magnetsensors bewirkt. Mit einer Anordnung aus mehreren derartigen Magnetsensoren kann eine Brückenschaltung zum Einsatz für eine praktische Messung gebildet werden.
PCT/EP2007/055801 2006-06-22 2007-06-13 Omr-sensor und anordnung aus solchen sensoren Ceased WO2007147760A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006028698.7 2006-06-22
DE200610028698 DE102006028698B3 (de) 2006-06-22 2006-06-22 OMR-Sensor und Anordnung aus solchen Sensoren

Publications (2)

Publication Number Publication Date
WO2007147760A2 WO2007147760A2 (de) 2007-12-27
WO2007147760A3 true WO2007147760A3 (de) 2008-02-21

Family

ID=38510427

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/055801 Ceased WO2007147760A2 (de) 2006-06-22 2007-06-13 Omr-sensor und anordnung aus solchen sensoren

Country Status (2)

Country Link
DE (1) DE102006028698B3 (de)
WO (1) WO2007147760A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7768083B2 (en) 2006-01-20 2010-08-03 Allegro Microsystems, Inc. Arrangements for an integrated sensor

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777607B2 (en) 2004-10-12 2010-08-17 Allegro Microsystems, Inc. Resistor having a predetermined temperature coefficient
US7795862B2 (en) 2007-10-22 2010-09-14 Allegro Microsystems, Inc. Matching of GMR sensors in a bridge
US8269491B2 (en) 2008-02-27 2012-09-18 Allegro Microsystems, Inc. DC offset removal for a magnetic field sensor
US7816905B2 (en) 2008-06-02 2010-10-19 Allegro Microsystems, Inc. Arrangements for a current sensing circuit and integrated current sensor
US8063634B2 (en) 2008-07-31 2011-11-22 Allegro Microsystems, Inc. Electronic circuit and method for resetting a magnetoresistance element
US7973527B2 (en) 2008-07-31 2011-07-05 Allegro Microsystems, Inc. Electronic circuit configured to reset a magnetoresistance element
US9354284B2 (en) 2014-05-07 2016-05-31 Allegro Microsystems, Llc Magnetic field sensor configured to measure a magnetic field in a closed loop manner
US9322887B1 (en) 2014-12-01 2016-04-26 Allegro Microsystems, Llc Magnetic field sensor with magnetoresistance elements and conductive-trace magnetic source
US10935612B2 (en) 2018-08-20 2021-03-02 Allegro Microsystems, Llc Current sensor having multiple sensitivity ranges
US11187764B2 (en) 2020-03-20 2021-11-30 Allegro Microsystems, Llc Layout of magnetoresistance element
US11567108B2 (en) 2021-03-31 2023-01-31 Allegro Microsystems, Llc Multi-gain channels for multi-range sensor
EP4130772B1 (de) 2021-08-05 2025-07-23 Allegro MicroSystems, LLC Magnetoresistives element mit kompensiertem temperaturkoeffizienten von tmr
US11994541B2 (en) 2022-04-15 2024-05-28 Allegro Microsystems, Llc Current sensor assemblies for low currents
US12248039B2 (en) 2023-08-08 2025-03-11 Allegro Microsystems, Llc Interleaving sub-arrays of magnetoresistance elements based on reference directions to compensate for bridge offset

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5691864A (en) * 1995-07-19 1997-11-25 Alps Electric Co., Ltd. Magnetoresistive head

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100633655B1 (ko) * 1999-12-22 2006-10-11 미쓰비시덴키 가부시키가이샤 센서 소자 및 그 제조 방법
JP2003526911A (ja) * 2000-03-09 2003-09-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 結合層を備える磁気装置並びにそのような装置を製造及び作動させる方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5691864A (en) * 1995-07-19 1997-11-25 Alps Electric Co., Ltd. Magnetoresistive head

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BERGESON J. D. ET AL: "Anomalous Magnetoresistance Phenomena in Organic Semiconductors", 2006 APS MARCH MEETING, 17 March 2006 (2006-03-17), XP002452449, Retrieved from the Internet <URL:http://meetings.aps.org/Meeting/MAR06/Event/45881> [retrieved on 20070926] *
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; 1961, EPSTEIN M ET AL: "Magnetoresistive magnetic-field sensor", XP002452451, Database accession no. 1964B13284 *
FRANCIS T L ET AL: "Large magnetoresistance at room temperature in semiconducting polymer sandwich devices", NEW JOURNAL OF PHYSICS, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 6, no. 1, 1 November 2004 (2004-11-01), pages 185 - 185, XP020080543, ISSN: 1367-2630 *
NATIONAL ELECTRONICS CONFERENCE 1961 CHICAGO, IL, USA, vol. 17, 1961, Proceedings of the National Electronics Conference, pages 611 - 616 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7768083B2 (en) 2006-01-20 2010-08-03 Allegro Microsystems, Inc. Arrangements for an integrated sensor
US8629520B2 (en) 2006-01-20 2014-01-14 Allegro Microsystems, Llc Arrangements for an integrated sensor
US8952471B2 (en) 2006-01-20 2015-02-10 Allegro Microsystems, Llc Arrangements for an integrated sensor
US9082957B2 (en) 2006-01-20 2015-07-14 Allegro Microsystems, Llc Arrangements for an integrated sensor
US9859489B2 (en) 2006-01-20 2018-01-02 Allegro Microsystems, Llc Integrated circuit having first and second magnetic field sensing elements
US10069063B2 (en) 2006-01-20 2018-09-04 Allegro Microsystems, Llc Integrated circuit having first and second magnetic field sensing elements

Also Published As

Publication number Publication date
WO2007147760A2 (de) 2007-12-27
DE102006028698B3 (de) 2007-12-13

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