WO2008024211A3 - Mise en forme de profil de faisceau à axe fixe pour système de recuit à diodes laser haute puissance - Google Patents

Mise en forme de profil de faisceau à axe fixe pour système de recuit à diodes laser haute puissance Download PDF

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Publication number
WO2008024211A3
WO2008024211A3 PCT/US2007/017684 US2007017684W WO2008024211A3 WO 2008024211 A3 WO2008024211 A3 WO 2008024211A3 US 2007017684 W US2007017684 W US 2007017684W WO 2008024211 A3 WO2008024211 A3 WO 2008024211A3
Authority
WO
WIPO (PCT)
Prior art keywords
fast axis
emitters
rows
workpiece
optical source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/017684
Other languages
English (en)
Other versions
WO2008024211A2 (fr
Inventor
Dean Jennings
Abhilash Mayur
Timothy N Thomas
Vijay Parihar
Vedapuram S Achutharaman
Randhir P S Thakur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2008024211A2 publication Critical patent/WO2008024211A2/fr
Publication of WO2008024211A3 publication Critical patent/WO2008024211A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention porte sur un appareil de recuit à surface dynamique qui permet d'effectuer le recuit d'une pièce à semiconducteur, lequel appareil comprend : un support de pièce destiné à soutenir une pièce; une source optique et un appareil de balayage destiné à faire balayer le support de pièce par la source optique le long d'un axe fixe. La source optique comprend un réseau d'émetteurs laser généralement agencés en rangées successives, les rangées étant transversales par rapport à l'axe rapide. De multiples lentilles de collimation de petite taille sont superposées à des rangées respectives d'émetteurs et possèdent un sens de collimation qui s'étend le long de l'axe rapide. La source optique comprend en outre un élément de déflexion optique d'axe rapide associé à des rangées choisies d'émetteurs, qui possède un angle ou une succession d'angles de déflexion optique correspondant aux déflexions de faisceau le long de l'axe rapide pour des rangées respectives d'émetteurs. Une optique focalise la lumière en provenance du réseau d'émetteurs laser sur une surface de la pièce afin de former une succession de faisceaux linéaires transversaux par rapport à l'axe rapide, espacés le long de l'axe rapide conformément à la succession d'angles de déflexion.
PCT/US2007/017684 2006-08-23 2007-08-08 Mise en forme de profil de faisceau à axe fixe pour système de recuit à diodes laser haute puissance Ceased WO2008024211A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50837606A 2006-08-23 2006-08-23
US11/508,376 2006-08-23

Publications (2)

Publication Number Publication Date
WO2008024211A2 WO2008024211A2 (fr) 2008-02-28
WO2008024211A3 true WO2008024211A3 (fr) 2008-09-25

Family

ID=39107284

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/017684 Ceased WO2008024211A2 (fr) 2006-08-23 2007-08-08 Mise en forme de profil de faisceau à axe fixe pour système de recuit à diodes laser haute puissance

Country Status (2)

Country Link
TW (1) TW200816321A (fr)
WO (1) WO2008024211A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105658371A (zh) * 2013-10-21 2016-06-08 法国圣戈班玻璃厂 模块化激光装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109997213A (zh) * 2016-09-28 2019-07-09 堺显示器制品株式会社 激光退火装置和激光退火方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4710911A (en) * 1984-04-27 1987-12-01 Matsushita Electric Industrial Co., Ltd. Method for recording, reproducing and erasing optical information
US6044096A (en) * 1997-11-03 2000-03-28 Sdl, Inc. Packaged laser diode array system and method with reduced asymmetry
US6556352B2 (en) * 2000-08-23 2003-04-29 Apollo Instruments Inc. Optical coupling system
US6771686B1 (en) * 1999-08-21 2004-08-03 Laserline Gesellschaft Fur Entwicklung Und Vertrieb Optical arrangement for the use during a laser diode arrangement as well as laser diode arrangement with such an optical arrangement
US20060262408A1 (en) * 2005-05-23 2006-11-23 Fuji Photo Film Co., Ltd. Linear light beam generating optical system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4710911A (en) * 1984-04-27 1987-12-01 Matsushita Electric Industrial Co., Ltd. Method for recording, reproducing and erasing optical information
US6044096A (en) * 1997-11-03 2000-03-28 Sdl, Inc. Packaged laser diode array system and method with reduced asymmetry
US6771686B1 (en) * 1999-08-21 2004-08-03 Laserline Gesellschaft Fur Entwicklung Und Vertrieb Optical arrangement for the use during a laser diode arrangement as well as laser diode arrangement with such an optical arrangement
US6556352B2 (en) * 2000-08-23 2003-04-29 Apollo Instruments Inc. Optical coupling system
US20060262408A1 (en) * 2005-05-23 2006-11-23 Fuji Photo Film Co., Ltd. Linear light beam generating optical system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105658371A (zh) * 2013-10-21 2016-06-08 法国圣戈班玻璃厂 模块化激光装置
CN105658371B (zh) * 2013-10-21 2017-09-22 法国圣戈班玻璃厂 模块化激光装置

Also Published As

Publication number Publication date
TW200816321A (en) 2008-04-01
WO2008024211A2 (fr) 2008-02-28

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