WO2008097274A2 - Protection contre un rayonnement avec des silsesquioxanes oligomériques polyédraux et des additifs métallisés - Google Patents

Protection contre un rayonnement avec des silsesquioxanes oligomériques polyédraux et des additifs métallisés Download PDF

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Publication number
WO2008097274A2
WO2008097274A2 PCT/US2007/019091 US2007019091W WO2008097274A2 WO 2008097274 A2 WO2008097274 A2 WO 2008097274A2 US 2007019091 W US2007019091 W US 2007019091W WO 2008097274 A2 WO2008097274 A2 WO 2008097274A2
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Prior art keywords
silicon containing
metal
shield
metallized
polyhedral oligomeric
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PCT/US2007/019091
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WO2008097274A3 (fr
Inventor
Joseph D. Lichtenhan
Xuan Fu
Paul Wheeler
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Hybrid Plastics Inc
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Hybrid Plastics Inc
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Publication of WO2008097274A3 publication Critical patent/WO2008097274A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/476—Organic materials comprising silicon
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1212—Zeolites, glasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1287—Process of deposition of the inorganic material with flow inducing means, e.g. ultrasonic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the present invention relates generally to methods for shielding electronics from damage by neutron, x-ray, proton, electron, vacuum ultraviolet and ultraviolet radiation.
  • the invention uses nanoscopic silicon containing agents with metals for radiation absorption.
  • This invention relates to use of polyhedral oligomeric silsesquioxane, silsesquioxane, polyhedral oligomeric silicate, silicates, and silicones or metallized- polyhedral oligomeric silsesquioxane, silsesquioxane, polyhedral oligomeric silicate, silicates, and silicones as alloyable agents in combination with metallic powders and polymeric materials.
  • Polyhedral oligomeric silsesquioxane, silsesquioxane, polyhedral oligomeric silicate, silicates, and silicones or metallized-polyhedral oligomeric silsesquioxane, silsesquioxane, polyhedral oligomeric silicate, silicates, and silicones are hereinafter referred to as "silicon containing agents".
  • Silicon containing agents have previously been utilized to complex metal atom(s), U.S. Patent No. 6,441 ,210. As discussed in U.S. Patent Application Serial No. 10/238,923, such silicon containing agents are useful for the dispersion and alloying of silicon and metal atoms with polymer chains uniformly at the nanoscopic level. Silicon containing agents can be converted in the presence of oxidizing agents such as ozone, oxygen plasma, and corona discharge to form a glass-like silica layer.
  • oxidizing agents such as ozone, oxygen plasma, and corona discharge to form a glass-like silica layer.
  • a number of prior art methods are known to produce glass coatings on polymers. Such methods include elevated temperature sintering, sputtering, vapor deposition, sol-gel, and coating processes, which all require additional manufacturing steps and are not amenable to high speed molding and extrusion processing. These prior art methods also suffer from poor interfacial bonding between the glass and polymer layers.
  • the prior art is also deficient in its ability to incorporate metal and nonmetal atoms and metal particles into a well defined nanoscopic structure within a single glass layer.
  • the prior art is not able to produce nanoscopically thin glass surfaces, and consequently the methods are not amenable to the high speed manufacture of flexible films and molded polymeric components.
  • silicon containing agents are also useful in combination with metallic particles for absorbing radiation.
  • the silicon containing agents are themselves effective as compatibilizers of the metal particles with polymers as well as carriers of metal atoms.
  • the silicon containing agents and metal particles can be utilized for the in situ formation of nanoscopically thin glass barriers upon exposure to oxygen plasma, ozone, or an oxidizing flame. The process results in a nanoscopically thin glass layer which contains metal atoms and metal particles.
  • the glassified material provides an exceptional barrier to outgassing and to ingression of moisture, and resistance against cleaning agents, in addition to its radiation absorption properties. Nanoscopically thin glass layers containing metals absorb photon and particle radiation that could otherwise damage polymer surfaces and substrates.
  • a related application is the use of nanoscopically thin glass layers containing mixtures of metals as phosphors and as semiconducting layers on materials.
  • Related art pertaining to the use of silicon containing agents for the isolation of a semiconducting particle is described in U.S. Patent Application Publication No. 2006/0040103 A1 filed February 23, 2006.
  • the silicon containing agents of most utility in this work are best exemplified by those based on low cost silicones, silsesquioxanes, polyhedral oligomeric silsesquioxanes, and polyhedral oligomeric silicates.
  • Figure 1 illustrates some representative silicon containing agents that are siloxane, silsesquioxane, and silicate examples.
  • metallized versions of silsesquioxanes, polyhedral oligomeric silsesquioxanes, and polyhedral oligomeric silicates are utilized.
  • Figure 2 illustrates some representative examples.
  • R groups in such structures can range from H, to alkane, alkene, alkyne, aromatic and substituted organic systems including ethers, acids, amines, thiols, phosphates, and halogenated R groups including fluorinated groups.
  • the silicon containing agents all share a common hybrid (i.e. organic- inorganic) composition in which the internal framework is primarily comprised of inorganic silicon-oxygen bonds. Upon further oxidation these systems readily form silica glasses.
  • the exterior of a nanostructured silicon containing agent is covered by both reactive and nonreactive organic functionalities (R), which ensure compatibility and tailorability of the nanostructure with organic polymers.
  • R reactive and nonreactive organic functionalities
  • the metal particles of preferred utility for shielding against radiation include: all inorganic and organometallic derivatives of gadolinium, samarium, and boron for shielding against neutrons; and all inorganic and organometallic derivatives of tungsten, molybdenum, niobium, tantalum, samarium and gadolinum for shielding against X-rays.
  • Other metals with a high atomic number such lead and cadnium may also be utilized.
  • Metal particles of preferred utility for producing luminescent and semiconducting, and magnetic properties in combined mixtures with metallized and nonmetallized silicon containing agents include Tb, Er, Au, Ag, Pt, Pd, Fe, FeO, GaAs, GaN, GaSb 1 AIGaAs, InAs, InP, InSb, InN, InGa, InGaP, InGaP, InGaAs, InAsSb, GaInAsP , TiO 2 , CdS, CdSe, CdTe, ZnS, PbS, CeO 2 , ZnO 2 , AI 2 O 3 , AIN, diamond, FeNi, SmCo 5 , Sm 2 COi 7 , NdBFe, and AINiCo.
  • FIG. 1 shows representative structural examples of nonmetallized silicon containing agents.
  • FIG. 2 shows representative structural examples of metallized silicon containing agents.
  • FIG. 3 illustrates the chemical process of oxidative conversion of silicon containing agents into a fused nanoscopically thin glass layer.
  • FIG. 4 is a comparison of neutron shielding for compositions relative to thickness.
  • FIG. 5 is an Energy Dispersive X-ray Analysis (EDAX) showing metal content in a chip cap.
  • EDAX Energy Dispersive X-ray Analysis
  • FIG. 6 is a comparison of X-ray shielding for compositions relative to thickness.
  • FIG. 7 illustrates glue-stick and coating application methods of material.
  • FIGS. 8(a) and 8(b) illustrate design variations utilizing the compositions for chip caps and chip caps containing a metal foil liner.
  • FIG. 9 illustrates design variation for application of compositions to chips.
  • a subset of silicon containing agents are classified as POSS and POS nanostructure compositions are represented by the formula:
  • R is the same as defined above and X includes but is not limited to siloxide, OH (silanol), Cl 1 Br, I, alkoxide (OR), acetate (OOCR), peroxide (OOR), amine (NR2) isocyanate (NCO), and R.
  • M refers to metallic elements within the composition that include high and low Z metals and in particular Al, B, Ga, Gd 1 Ce, W, Ni, Eu, Y, Zn, Mn, Os, Ir, Ta 1 Cd, Cu 1 Ag 1 V 1 As 1 Tb, In 1 Ba 1 Ti, Sm, Sr 1 Pb 1 Lu 1 Cs, Tl, Te.
  • the symbols m, n and j refer to the stoichiometry of the composition.
  • the symbol ⁇ indicates that the composition forms a nanostructure and the symbol # refers to the number of silicon atoms contained within the nanostructure.
  • the value for # is usually the sum of m+n, where n ranges typically from 1 to 24 and m ranges typically from 1 to 12. It should be noted that ⁇ # is not to be confused as a multiplier for determining stoichiometry, as it merely describes the overall nanostructural characteristics of the system (aka cage size).
  • the present invention teaches the use of silicon containing agents as alloying agents for the absorption of radiation, control of electronic properties, and for the in situ formation of glass layers in polymeric materials and the reinforcement of polymer coils, domains, chains, and segments at the nanoscopic level.
  • the present invention describes a new series of formulated polymeric compositions and their utility as shielding of integrated circuits or other electronic components against radiation damage.
  • the compositions are suitable for manufacturing molded components that can be applied directly to packaged or bare integrated circuits.
  • the preferred manufactured product form is as chip-caps or hotmelt wax stick that can be directly applied to an integrated circuit at the thickness necessary to provide the desired level of radiation shielding.
  • compositions are also suitable for application as low viscosity conformal coatings that can be cured into a nonflowable form by addition or condensation polymerizations.
  • All of the compositions employing silicon containing agents can be surface glassified to prevent outgassing (for space applications) or in order to provide addition protection against environmental exposure such as sunlight, moisture or chemical attack.
  • compositions presented contain primary material combinations of metallized and nonmetallized silicon containing agents, with metal foils, metallic and ceramic powders, and a polymer of thermoplastic, rubber, elastomeric, or thermosetting resin of manmade or natural origin.
  • the preferred method of preparing the compositions involves mixing of the metallized or nonmetallized silicon containing agent into the polymer along with a metal powder and subsequent molding of a chip cap, a glue stick or bottling as a curable coating. All types and techniques of blending, including melt blending, dry blending, solution blending, milling, reactive and nonreactive blending are effective. Alternatively, the silicon containing agent can be coated on the particles prior to blending into the polymer.
  • Another preferred method of preparing chip cap compositions involves mixing of the metallized or nonmetallized silicon containing agents into the polymer followed by sandwiching a metal foil in between two layers of the material.
  • the polymer- metal-polymer laminate is suitable for use in thermoforming and stamping applications to produce chip caps.
  • silicon containing agents can be tailored to show compatibility or incompatibility with selected sequences and segments within polymer chains and coils. Their physical size in combination with their tailorable compatibility enables silicon containing agents based on nanostructured chemicals to be selectively incorporated into polymers and to control the dynamics of coils, blocks, domains, and segments, and subsequently favorably impact a multitude of physical properties.
  • the use of silicon containing agents increases the metal content of the final formulation, and improves its ability to be fabricated into a film, laminate, molded article, or use as an adhesive, potting agent, or glob-top.
  • Silicon containing agents also provide for the in situ formation of glass glazings on articles molded from the resulting compositions.
  • Chemical oxidation methods such as ozone, corona discharge, flame, and oxygen plasma are desirable methods for the in situ glass layer formation.
  • oxygen plasma is oxygen plasma.
  • Compositions containing silicon containing agents where the R group is H, methyl or vinyl, are highly desirable as they can be rapidly converted to glass upon exposure to ozone, peroxide, or even hot steam.
  • a nanoscopically thin layer of glass from 1 nm to 500 nm will result. If the silicon containing agent contained a metal, then the metal will also be incorporated into the glass layer.
  • advantages derived from the formation of a nanoscopically thick glass surface layer include barrier properties for gases and liquids, reduction of outgassing from the molded article, improved oxidative stability, flammability reduction, improved electrical properties, improved printability, improved stain and scratch resistance and improved environmental resistance.
  • the keys that enable silicon containing agents such as nanostructured chemicals to function in this invention include: (1 ) their unique size with respect to polymer chain dimensions, (2) their ability to be compatibilized and uniformly dispersed at the nanoscopic level with polymer systems to overcome repulsive forces that promote incompatibility and expulsion of the nanoreinforcing agent by the polymer chains, (3) their hybrid composition and ability glassify upon exposure to oxidants, (4) their ability to chemically incorporate metal atoms and alloys into the cage structure, and (5) the ability to compatibilize metal and ceramic particles and thereby increase the homogeneity and loading level of metal within a resulting polymeric composition.
  • the factors that affect selection of a silicon containing agent for radiation absorption include the specific wavelength of radiation, the loading level of the silicon containing agent, metal atoms and particles, and the optical, electronic, and physical properties desired in the final material composition.
  • Silicon containing agents such as the polyhedral oligomeric silsesquioxanes illustrated in Figure 1 , and metallized polyhedral oligomeric silsesquioxanes such as those in Figure 2, are available as solids and oils. Both forms dissolve in molten polymers or in solvents, or can be reactively on nonreactively incorporated into polymers.
  • thermodynamic forces driving dispersion are supplemented by kinetic mixing forces such as those that occur during high shear mixing, solvent blending or alloying.
  • the kinetic dispersion is also aided by the ability of some silicon containing agents to melt at or near the processing temperatures of most polymers.
  • Silicon containing agents can also be utilized in combination with macroscopic fillers to render improved homogeneity of dispersion and compatibility, which provides enhancement of electronic properties, physical properties, barrier, stain resistance.
  • silicon containing agents can be used in combination with tungsten, boron, or gadolinium particles to provide highly effective coatings with resistance toward ionizing photon and neutron radiation and toward non-ionizing radiation.
  • metallized silicon containing agents containing samarium and gadolinium are also of particular utility by improving the level of metal loading.
  • Such formulations are of high value for electronics that are sensitive to neutron induced memory upset as well as space-vehicle mirrors, portals, structures, sensors, and for food packaging, cosmetics and biological materials.
  • the present invention shows that property enhancements can be realized in molded components and coatings by the direct blending of silicon containing agents and metallic powders into polymers. This greatly simplifies the prior art processes.
  • silicon containing agents like nanostructured chemicals possess spherical shapes (per single crystal X-ray diffraction studies), like molecular spheres, and because they dissolve, they are also effective at reducing the viscosity of polymer systems.
  • This benefits the processing, and molding, coating or lamination of articles using such nano-alloyed polymers, yet with the added benefits of reinforcement of the individual polymer chains due to the nanoscopic nature of the chemicals.
  • Subsequent exposure of the nano-alloyed polymers to oxidizing agents results in the in situ formation of nanscopic glass on the exposed surfaces of molded articles ( Figure 3).
  • Silicon containing agents can be added to a vessel containing the desired polymer, prepolymer or monomers and dissolved in a sufficient amount of an organic solvent (e.g. hexane, toluene, dichloromethane, etc.) or fluorinated solvent to effect the formation of one homogeneous phase.
  • an organic solvent e.g. hexane, toluene, dichloromethane, etc.
  • fluorinated solvent e.g. hexane, toluene, dichloromethane, etc.
  • the resulting formulation may then be used directly or for subsequent processing.
  • Example 1 Compositions Desirable for Neutron Shielding
  • compositions capable of providing a range of shielding for electronics components against thermal neutron damage are easily formulated.
  • the shielding level is controllable by the thickness of material around the component and the loading level of absorber within the material.
  • the ability to tailor the shielding level by thickness and composition provides a means to minimize cost and amount of the shielding material.
  • the plot in Figure 4 provides the relationship between shielding level (transmission of thermal neutrons) relative to thickness of each composition.
  • POMS also provides a means for improving the hydrophobicity of the metal oxide as a result of the organic R groups on the cage and its homogeneous dispersion throughout the material (see U.S. Patent Application Serial No 11/015,185). It is possible to measure the compositional homogeneity of elements within a material using Energy Dispersive X-ray Analysis (EDAX). High- resolution measurements can determine the differences in composition at different positions on a sample and such an analysis helps evaluate the performance of this material as a radiation shielding layer.
  • Fig. 5 shows compositional EDAX spectrum of the Gd metallized POMS in combination with Gd 2 O 3 metal oxide powder and paraffin wax shows the uniform presence of carbon C, Gd, Si, and O throughout the chip cap and dispersion at the nanoscopic level.
  • Example 2 Compositions Desirable for X-ray Shielding
  • compositions capable of providing a range of shielding for electronics components against X-ray damage are easily formulated.
  • the shielding level is controllable by the thickness of material around the component and the loading level of absorber within the material.
  • compositions containing metal atoms, metals, or metal oxide powders are able to dissipate electrostatic charge and electrical charges that can result in conductors. Such compositions are well suited to charge dissipation in wire, cables, and cable harnesses, while maintaining resistance to moisture and abrasion.
  • a typical chip scale packaging process starts with the mounting of the bare die on the interposer using epoxy, usually of non-conductive type (although conductive epoxy is also used when the die backside needs to be connected to the circuit).
  • the die is then wire bonded to the interposer using gold or aluminum wires. Wirebond profiles must be as low and as close to the die as possible in order to minimize package size.
  • Plastic encapsulation to protect the die and wires then follows, usually by transfer molding. After encapsulation, solder in the form of balls or connections is attached to the bottom side of the interposer, after which the package is marked. Finally, the parts are singulated from the leadframe.
  • shielding compositions can be applied to the bare die at the plastic encapsulation step mentioned above.
  • dispersment of the metallized or nonmetallized silicon containing agents and metal particles can be incorporated into a conductive or nonconductive epoxy, bismaleimide, acrylic, phenolic or other suitable thermosetting or UV curable resin system.
  • the shielding compositions can be applied to the plastic or ceramic packaged chip through the use of a conformal coating that contains the metallized or nonmetallized silicon containing agents and metal particles and then cured into place. Further the coating formulations can be applied to the plastic or ceramic packaged chip through use of a hot wax glue gun and a meltable wax stick containing the metallized or nonmetallized silicon containing agents and metal particles. Application of either the curable coating or the hot melt wax will result in an adequately coated chip as shown in Figure 7.
  • Example 4 Chip Cap Design, Manufacture and Application
  • a preferred method of applying the compositions involves the molding of chip caps that precisely fit and control the thickness of material surrounding the top, sides and bottom of the chips desired to be protected.
  • This method involves the mixing of the metallized or nonmetallized silicon containing agents and metal powder with a thermoplastic polymer. Most preferably, commercially available hot melt glue sticks can be utilized.
  • the composition is then injection molded to form a cap of the desired thickness and to snugly fit to the chip.
  • the composition can also be molded into a sheet and thermoformed using a die and cavity to render an appropriately sized chip cap (Figure 8a).
  • An additional variation can use the composition for the sandwich lamination of a metal foil between to layers of the composition. This laminate is then suitable for thermoforming into chip caps that contain both the shielding composition and a metallic interlayer to render additional shielding protection (Figure 8b).
  • Desirable metals for the inner layer include gadolinium, boron, samarium, and tungsten.
  • the bottom of the chip can also be protected against radiation through use of a similarly molded chip cap or by application of the composition via a hot melt glue stick or curable coating as described previously ( Figure 7).
  • the chip caps and the coatings described can also be glassified to provide assurance against outgassing or ingression of moisture and undesirable chemicals.
  • the surface glassification process can be carried out on premolded chip caps or on capped or coated chips.
  • Typical oxygen plasma treatments range from 1 seconds to 5 minutes under 100% power.
  • Typical ozonolysis treatments range from 1 second to 5 minutes with ozone being administered through a dichloromethane solution or in an ozone/oxygen gas stream.
  • chip caps can be used simultaneously or singularly.

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Abstract

L'invention concerne du silicium nanoscopique métallisé et du silicium nanoscopique non métallisé contenant des agents comprenant du silsesquioxane oligomérique polyédral et du silicate oligomérique polyédral qui fournissent une absorption de rayonnement et une formation in situ de couches de verre nanoscopiques sur des surfaces de matériau. Ces améliorations de propriété sont utiles dans des matériaux pouvant survivre dans l'espace, des conditionnements micro-électroniques, ainsi que dans des peintures, des revêtements et des articles moulés absorbeurs de rayonnement.
PCT/US2007/019091 2006-08-30 2007-08-30 Protection contre un rayonnement avec des silsesquioxanes oligomériques polyédraux et des additifs métallisés Ceased WO2008097274A2 (fr)

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US60/824,040 2006-08-30

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WO2008097274A2 true WO2008097274A2 (fr) 2008-08-14
WO2008097274A3 WO2008097274A3 (fr) 2008-10-16

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CN111066141A (zh) * 2017-06-23 2020-04-24 ams国际有限公司 用于电子器件的抗辐射封装件
CN113392499A (zh) * 2021-05-08 2021-09-14 中国辐射防护研究院 电子直线加速器机房辐射屏蔽及臭氧浓度计算方法和装置
CN118155889A (zh) * 2024-05-13 2024-06-07 烟台核电智能技术研究院有限公司 一种用于中子辐射屏蔽的超材料及其制备方法

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Publication number Priority date Publication date Assignee Title
US20060127583A1 (en) * 2003-12-18 2006-06-15 Lichtenhan Joseph D Polyhedral oligomeric silsesquioxanes and polyhedral oligomeric silicates barrier materials for packaging
KR20070008546A (ko) * 2003-12-18 2007-01-17 하이브리드 플라스틱스 인코포레이티드 코팅, 복합재 및 첨가제로서의 다면체 올리고머실세스퀴옥산 및 금속화 다면체 올리고머 실세스퀴옥산

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CN111066141B (zh) * 2017-06-23 2023-10-10 ams国际有限公司 用于电子器件的抗辐射封装件
CN113392499A (zh) * 2021-05-08 2021-09-14 中国辐射防护研究院 电子直线加速器机房辐射屏蔽及臭氧浓度计算方法和装置
CN113392499B (zh) * 2021-05-08 2023-01-17 中国辐射防护研究院 电子直线加速器机房辐射屏蔽及臭氧浓度计算方法和装置
CN118155889A (zh) * 2024-05-13 2024-06-07 烟台核电智能技术研究院有限公司 一种用于中子辐射屏蔽的超材料及其制备方法

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