WO2008106955A3 - Verfahren und vorrichtungen zum aufbringen von transparenten siliziumdioxid-schichten aus der gasphase - Google Patents

Verfahren und vorrichtungen zum aufbringen von transparenten siliziumdioxid-schichten aus der gasphase Download PDF

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Publication number
WO2008106955A3
WO2008106955A3 PCT/DE2008/000392 DE2008000392W WO2008106955A3 WO 2008106955 A3 WO2008106955 A3 WO 2008106955A3 DE 2008000392 W DE2008000392 W DE 2008000392W WO 2008106955 A3 WO2008106955 A3 WO 2008106955A3
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WO
WIPO (PCT)
Prior art keywords
silicon dioxide
gas phase
devices
application
dioxide layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2008/000392
Other languages
English (en)
French (fr)
Other versions
WO2008106955A2 (de
Inventor
Bianca Biedermann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to EP08715541A priority Critical patent/EP2132359A2/de
Priority to JP2009552062A priority patent/JP2010520371A/ja
Publication of WO2008106955A2 publication Critical patent/WO2008106955A2/de
Publication of WO2008106955A3 publication Critical patent/WO2008106955A3/de
Priority to US12/554,101 priority patent/US20100021632A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/60—Efficient propulsion technologies, e.g. for aircraft

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)

Abstract

Verfahren sowie Vorrichtung zum Aufbringen von transparenten Siliziumdioxid-Schichten aus der Gasphase bei welchem mittels einem Trägergas Precursoren in einen Ofen eingeleitet werden, dadurch gekennzeichnet, dass dem Gasphasenprozess ein Flüssigphasenprozess vorgeschaltet ist, wobei als Flüssigphasenprozess ein Prozess verwendet wird, welcher als Quasi-Sol-Gel-Prozess aus siliziumhaltigen Ausgangschemikalien bis zur Entstehung eines Siliziumdioxid- Gels ablaufen würde, allerdings der Flüssigphasenprozess im Ansatz des Sol-Stadium dadurch abgebrochen wird, dass das Reaktionsgemisch mit den enthaltenen Precursoren verdampft, mit dem Trägergas gemischt und zum Ofen transportiert wird.
PCT/DE2008/000392 2007-03-05 2008-03-05 Verfahren und vorrichtungen zum aufbringen von transparenten siliziumdioxid-schichten aus der gasphase Ceased WO2008106955A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08715541A EP2132359A2 (de) 2007-03-05 2008-03-05 Verfahren und vorrichtungen zum aufbringen von transparenten siliziumdioxid-schichten aus der gasphase
JP2009552062A JP2010520371A (ja) 2007-03-05 2008-03-05 透明二酸化ケイ素膜の気相コーティング方法及び装置
US12/554,101 US20100021632A1 (en) 2007-03-05 2009-09-04 Method and devices for the application of transparent silicon dioxide layers from the gas phase

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007010995A DE102007010995A1 (de) 2007-03-05 2007-03-05 Verfahren und Vorrichtung zum Aufbringen von transparenten Siliziumdioxid-Schichten aus der Gasphase
DE102007010995.6 2007-03-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/554,101 Continuation US20100021632A1 (en) 2007-03-05 2009-09-04 Method and devices for the application of transparent silicon dioxide layers from the gas phase

Publications (2)

Publication Number Publication Date
WO2008106955A2 WO2008106955A2 (de) 2008-09-12
WO2008106955A3 true WO2008106955A3 (de) 2008-11-13

Family

ID=39677863

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/000392 Ceased WO2008106955A2 (de) 2007-03-05 2008-03-05 Verfahren und vorrichtungen zum aufbringen von transparenten siliziumdioxid-schichten aus der gasphase

Country Status (6)

Country Link
US (1) US20100021632A1 (de)
EP (1) EP2132359A2 (de)
JP (1) JP2010520371A (de)
KR (1) KR20090121371A (de)
DE (1) DE102007010995A1 (de)
WO (1) WO2008106955A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102482773A (zh) * 2009-09-04 2012-05-30 威兰德-沃克公开股份有限公司 层施用的工艺

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138520A (en) * 1988-12-27 1992-08-11 Symetrix Corporation Methods and apparatus for material deposition
DE19708808A1 (de) * 1997-03-04 1998-09-10 Andreas Biedermann Verfahren und Vorrichtung zum Aufbringen von transparenten Schutzschichten auf Gegenstände, danach hergestellte Gegenstände
US20060211271A1 (en) * 2005-03-17 2006-09-21 Weigel Scott J Aerosol misted deposition of low dielectric organosilicate films

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4117041A1 (de) 1991-05-24 1992-11-26 Inst Neue Mat Gemein Gmbh Verfahren zur herstellung von gegenstaenden aus bleikristall mit verringerter bleilaessigkeit
DE10231731B4 (de) 2002-06-26 2006-10-05 Andreas Biedermann Dachziegel mit ökologisch antimikrobieller Oberfläche

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138520A (en) * 1988-12-27 1992-08-11 Symetrix Corporation Methods and apparatus for material deposition
DE19708808A1 (de) * 1997-03-04 1998-09-10 Andreas Biedermann Verfahren und Vorrichtung zum Aufbringen von transparenten Schutzschichten auf Gegenstände, danach hergestellte Gegenstände
US20060211271A1 (en) * 2005-03-17 2006-09-21 Weigel Scott J Aerosol misted deposition of low dielectric organosilicate films

Also Published As

Publication number Publication date
WO2008106955A2 (de) 2008-09-12
EP2132359A2 (de) 2009-12-16
US20100021632A1 (en) 2010-01-28
DE102007010995A1 (de) 2008-09-11
KR20090121371A (ko) 2009-11-25
JP2010520371A (ja) 2010-06-10

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