WO2008123765A1 - Source de lumière à circuits intégrés installée directement sur un substrat en aluminium pour une meilleure efficacité thermique et procédé de production de cette dernière - Google Patents

Source de lumière à circuits intégrés installée directement sur un substrat en aluminium pour une meilleure efficacité thermique et procédé de production de cette dernière Download PDF

Info

Publication number
WO2008123765A1
WO2008123765A1 PCT/MY2008/000027 MY2008000027W WO2008123765A1 WO 2008123765 A1 WO2008123765 A1 WO 2008123765A1 MY 2008000027 W MY2008000027 W MY 2008000027W WO 2008123765 A1 WO2008123765 A1 WO 2008123765A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
light source
circuitries
electrical
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/MY2008/000027
Other languages
English (en)
Inventor
Kia Kuang Tan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of WO2008123765A1 publication Critical patent/WO2008123765A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires

Definitions

  • This invention relates to a thermally efficient solid state light source and in particular, a high-power light emitting diode (hereinafter referred to as "LED”) light source packaged in unit or matrix format for high temperature operation.
  • LED high-power light emitting diode
  • LED Light Emitting Diode
  • the design challenge is to interface generated heat away from the light source efficiently and cost effectively.
  • FIG. 1 shows the various high powered LED packages. Some of the packages have package thermal resistance as high as 25°C/W. The best alternative material is metal; and contradictory, the best thermal material also has the best electrical properties.
  • One commonality of the Prior Art package design is the attempt to work-around these conflicting properties by trying to isolate the electrical connections from the bulk metal base with a very thin layer of thermally conductive dielectric which if too thin will result in lower breakdown voltage.
  • a solid state light source packaged for high temperature operation comprises an Aluminum Metal substrate including an overlying plurality of electrical connections isolated with dielectric between the circuitry metallization and metal substrate, a light source die direct mounted overlying the metal base with no dielectric in between, a underlying electrical connection pads connected to the overlying electrical circuitries using vertically isolated bulk metal without drilling, an underlying thermal pad connected directly to the bulk metal with no dielectric in between and an over-mold compound for protection and light shaping purposes.
  • the selective electrical isolation and direct mounting of the heat source to the bulk metal exhibits lowest thermal resistances.
  • the preferred embodiment for matrix or board level high volume manufacturing consists of a pre-stamped matrix substrate with either stamp-outs or break-off tabs or v-cut using stamping approach around the perimeter of the individual unit single-layer circuitries or multi-layer circuitries on a metal core substrate.
  • the said matrix substrate can be subsequently singulated by hand or by simple automated jigging process.
  • the same stamping process allows multi-level mould or cavity design to be pressure- stamped or coined onto the same substrates.
  • the newly formed surfaces can be used for better mold compound anchoring.
  • the created cavity can serves as a light shaping reflector.
  • Another feature of the matrix substrate in the present invention is the matrix Design-for- testability features specifically the designing in of the inter-device common electrical
  • FIG. 1 shows example of Prior Art High Power Assembly
  • FIG. 2 is the schematic cross section of the first embodiment of the present invention.
  • FIG. 3A, 3B, 3C, 3D, 3E and 3F illustrate alternative embodiments with different configuration of dielectric with and without light source shaping molding
  • FIG. 4 shows the various views of matrix pre-stamped substrate according to the present invention.
  • Part I describes the structure and features of the light source packaged using aluminum substrate for high power LED in accordance with the invention and illustrate exemplary embodiments.
  • Part II describes the novel high volume manufacturing approach with Design-For- Testability features in matrix
  • FIG. 2 is a schematic cross section view of a surface mountable LED package (1) for high temperature operation.
  • the aluminum metal base has been prefabricated with the required circuitries resulting in electrical circuitries (13A, 13B) on the first face, (13C, 13D and 13E) on the opposing second face, aluminum oxide dielectric is selectively grown on the metal base forming region (12), the protected areas remain as bulk metal (1OA, 1OB, 1OC and 10D). Region (12) can be further developed allowing first face to second face connection and vertical isolation without any drilling.
  • LED (18) is mounted directly onto the overlying thermal pad (13B) which is plated directly onto the bulk metal (10C) whereby (1OA, 1OB, 1OC and 10D) are sections of the same piece of bulk metal.
  • LED (18) can be mounted using flip-chip or wire-bonding approach as depicted in FIG. 3B abd FIG 3C.
  • the underlying thermal pad (13E) is connected directly to the bulk metal (10C) as well.
  • the LED (18) is thermally connected from first face to the second face via bulk metal (10C).
  • t is the substrate thickness in meter
  • k is the material thermal conductivity
  • the thermal conductivity for aluminum alloy ranges from 170 W/m-K to 230 W/m-K versus the more expensive ceramic at -30 W/m-K and about 0.3 W/m-K for FR4.
  • the base material thickness can range from 150m to 300m in thickness.
  • Equation 1 the thinner material would have better through-plane thermal conductivity.
  • the LED package (100) can be solder-mounted on to a external FR4 or metal core printed circuit board (not shown).
  • circuit layer (13) provides the circuitries for connecting multiple diodes in array, electrostatic discharge protection circuitry, diode control drivers and other surface mount components (not shown in FIG.2)
  • various types of light shaping design can be over molded onto the substrate as shown in FIG. 3A and FIG 3B.
  • the same light shaping cavity can be pre-stamped or coined onto the Aluminum metal base as shown in FIG. 5.
  • Solder mask (20) can also be applied the said substrate.
  • the same substrate can be adopted for Prior Art LED emitter light source as shown in FIG. 3E and 3F.
  • 3E substrate has direct connection to the metal base.
  • 3F has an additional dielectric layer for electrical isolation.
  • the novel substrate design in the present invention is configurable as depicted in FIG. 3. There is no copper or dielectric lamination onto the metal base.
  • the material is RoHS compliant and suitable for high temperature operation exceeding 30O 0 C.
  • FIG. 4 depicts the various views of the matrix substrate pre-stamped material concept.
  • the pre-stamped designs will vary depending on the shape of the LED packaging requirements.
  • the circle represents the cavity design and conversely will represent one unit device in the matrix substrate for illustration purposes.
  • the sample substrate carries 13 x 13 or a total of 169 devices with either single-layer or multi-layer circuitries.
  • the individual device will be singulated at the end of the manufacturing process before shipping to the end customers.
  • the sample substrate though represented as one matrix with multiple rectangular devices; the substrate can be designed to consist of multiple matrices with patterned shape; for example, a STAR or round shape or any odd shape design to suit the end product industrial design.
  • base layer 100 formed from a material having good thermal conductivity as described in the present invention.
  • the same pre-stamped concept is applicable to equivalent flat base substrate for matrix manufacturing.
  • the base material is Aluminum Alloy. However, other materials having similar properties may also be used.
  • a thin layer of dielectric is selectively added to the surface of the aluminum in areas that requires electrical isolation. Those skilled in the art will understand that the dielectric may simply be a laminated ceramic resin or anodic coating grown using the hard anodization process. Circuitry of copper traces may be formed either by etching away the laminated copper foil or selectively plated using the additive process, hi the preferred embodiment (106), copper is selectively plated on dielectric areas for electrical isolation and directly on aluminum surface on heat source location to maximize thermal conduction. Besides copper, other types of electrically conductive material like silver ink may also be used.
  • Substrate (100) has pre-stamped cut-outs (103) and pre-stamped v-cut straight lines (104).
  • 103 and 104 define the basis of the present invention. 103 need not be a rectangular shaped cut-out. 103 can be different depending on the patterned shape layout.
  • stamping mould (105) can be created. If used as a reflector cup, reflective material can be applied to enhance reflectivity.
  • the Design-for- Testability features can be incorporated to allow matrix testing.
  • (107 are added circuitries within the device.
  • (107 can be just a common cathode bus for all devices.
  • the present invention is specifically adapted to and has been described in connection with a flat plate metal base substrate but is not so limited; the invention can, in fact, be applied to substantially any substrate made of different material particularly hybrid metal substrate, ceramic based substrate, BT epoxy based substrate, Fibre Glass printed circuit based substrate or metal finned heatsink with a flat interface for electrical connectivity. It is understood that the above-described embodiments are illustrative of only a few of the many possible specific embodiments, which can represent applications of the invention. The same substrate can be used for power electronic devices; multi-chip module applications besides light source application. Numerous and varied other arrangements can be made by those skilled in the art without departing from the spirit and scope of the invention.

Landscapes

  • Led Device Packages (AREA)

Abstract

Dans cette invention, une source de lumière à circuits intégrés conditionnée pour fonctionner à haute température comprend un substrat métallique en aluminium (100) comprenant une pluralité de circuits électriques sus-jacents (13 A-E) isolés avec du diélectrique entre la métallisation des circuits et le substrat métallique, un dé (18) de source de lumière installé directement au-dessus de la base métallique (1 OA-D) sans aucun diélectrique (12) en position intermédiaire, des plages de connexion électrique sous-jacentes reliées aux circuits électriques sus-jacents au moyen de métal non façonné isolé verticalement sans perçage, des circuits électriques sous-jacents (13 A-E) reliés directement au métal non façonné (1 OA-D) sans aucun diélectrique (12) entre ces derniers et un composé surmoulé (33) servant à protéger et à mettre en forme la lumière. L'isolation électrique sélective et l'installation directe de la source de chaleur sur le métal non façonné (1 OA-D) assurent des résistances thermiques plus faibles. Une conception similaire comprenant une pluralité de ces éléments peut être utilisée pour plus d'un ensemble DEL à matrice.
PCT/MY2008/000027 2007-04-05 2008-04-04 Source de lumière à circuits intégrés installée directement sur un substrat en aluminium pour une meilleure efficacité thermique et procédé de production de cette dernière Ceased WO2008123765A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MYPI20070531 2007-04-05
MYPI20070531 2007-04-05

Publications (1)

Publication Number Publication Date
WO2008123765A1 true WO2008123765A1 (fr) 2008-10-16

Family

ID=39619415

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/MY2008/000027 Ceased WO2008123765A1 (fr) 2007-04-05 2008-04-04 Source de lumière à circuits intégrés installée directement sur un substrat en aluminium pour une meilleure efficacité thermique et procédé de production de cette dernière

Country Status (1)

Country Link
WO (1) WO2008123765A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101807657A (zh) * 2009-02-18 2010-08-18 Lg伊诺特有限公司 发光器件封装和包括其的照明系统
EP2221892A1 (fr) 2009-02-18 2010-08-25 LG Innotek Co., Ltd. Dispositif électroluminescent à semi-conducteur et emballage de dispositif électroluminescent comprenant ce dispositif
EP3119168A1 (fr) * 2015-07-17 2017-01-18 Goodrich Lighting Systems GmbH Unité de lumière à del d'aéronef

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100703218B1 (ko) * 2006-03-14 2007-04-09 삼성전기주식회사 발광다이오드 패키지
US20070080360A1 (en) * 2005-10-06 2007-04-12 Url Mirsky Microelectronic interconnect substrate and packaging techniques

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070080360A1 (en) * 2005-10-06 2007-04-12 Url Mirsky Microelectronic interconnect substrate and packaging techniques
KR100703218B1 (ko) * 2006-03-14 2007-04-09 삼성전기주식회사 발광다이오드 패키지
US20070221928A1 (en) * 2006-03-14 2007-09-27 Samsung Electro-Mechanics Co., Ltd. Light emitting diode package

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KIM K M ET AL: "Aluminium-based packaging platform for LED using selectively anodising method", ELECTRONICS LETTERS IET UK, vol. 44, no. 1, 3 January 2008 (2008-01-03), pages 24 - 25, XP009103483, ISSN: 0013-5194 *
KYUHO SHIN ET AL: "Chip-on-ACB (anodized circuit board) package for high power light-emitting diode", JOURNAL OF MICROELECTRONICS AND ELECTRONIC PACKAGING, IMAPS, WASHINGTON, 1 January 2006 (2006-01-01), pages 67 - 72, XP009103385, ISSN: 1551-4897 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101807657A (zh) * 2009-02-18 2010-08-18 Lg伊诺特有限公司 发光器件封装和包括其的照明系统
EP2221892A1 (fr) 2009-02-18 2010-08-25 LG Innotek Co., Ltd. Dispositif électroluminescent à semi-conducteur et emballage de dispositif électroluminescent comprenant ce dispositif
US8421103B2 (en) 2009-02-18 2013-04-16 Lg Innotek Co., Ltd. Semiconductor light emitting device and light emitting device package including the same
EP3119168A1 (fr) * 2015-07-17 2017-01-18 Goodrich Lighting Systems GmbH Unité de lumière à del d'aéronef
CN106352288A (zh) * 2015-07-17 2017-01-25 古德里奇照明系统有限责任公司 飞机led灯单元
US10273022B2 (en) 2015-07-17 2019-04-30 Goodrich Lighting Systems Gmbh Aircraft LED light unit

Similar Documents

Publication Publication Date Title
US7728341B2 (en) Illumination device for providing directionally guided light
JP5512509B2 (ja) 半導体発光デバイスパッケージ及び方法
CN201307606Y (zh) 一种新型陶瓷封装基座
US8017964B2 (en) Light emitting device
CN102185091B (zh) 一种发光二极管器件及其制造方法
US20150359107A1 (en) Electronic module with a plastic-coated electronic circuit and method for the production thereof
CN104272480B (zh) 用于制造器件载体、电子装置和辐射装置的方法以及器件载体、电子装置和辐射装置
TWI420695B (zh) 化合物半導體元件之封裝模組結構及其製造方法
CN105590901A (zh) 用于元件或电路的承载体
CN102939669A (zh) 可表面安装的光电子器件和用于制造可表面安装的光电子器件的方法
US8957448B2 (en) LED package and fabrication method of the same
US20150295141A1 (en) Optoelectronic Semiconductor Component
US10236429B2 (en) Mounting assembly and lighting device
KR101253247B1 (ko) 광 디바이스용 기판
US20100044727A1 (en) Led package structure
CN101728370B (zh) 化合物半导体元件的封装模块结构及其制造方法
CN106098919A (zh) 一种高导热高绝缘的led光引擎封装结构及制备方法
US20070176182A1 (en) Structure for integrating LED circuit onto heat-dissipation substrate
WO2008123765A1 (fr) Source de lumière à circuits intégrés installée directement sur un substrat en aluminium pour une meilleure efficacité thermique et procédé de production de cette dernière
US20110316016A1 (en) Led chip package structure
CN102214587B (zh) 制作多层式阵列型发光二极管的方法
CN202205814U (zh) 一种发光二极管器件
US20120025217A1 (en) Led lighting module
KR101004929B1 (ko) 발광다이오드 패키지 및 이를 구비한 발광다이오드 패키지 모듈
KR101353299B1 (ko) 고효율 고방열구조의 ｌｅｄ패키지 구조 및 그 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08741604

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08741604

Country of ref document: EP

Kind code of ref document: A1