WO2008129963A1 - 半導体発光素子およびその製造方法 - Google Patents

半導体発光素子およびその製造方法 Download PDF

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Publication number
WO2008129963A1
WO2008129963A1 PCT/JP2008/057176 JP2008057176W WO2008129963A1 WO 2008129963 A1 WO2008129963 A1 WO 2008129963A1 JP 2008057176 W JP2008057176 W JP 2008057176W WO 2008129963 A1 WO2008129963 A1 WO 2008129963A1
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WIPO (PCT)
Prior art keywords
layer
metal
emitting device
semiconductor light
gaas
Prior art date
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Ceased
Application number
PCT/JP2008/057176
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English (en)
French (fr)
Inventor
Masakazu Takao
Mitsuhiko Sakai
Kazuhiko Senda
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Rohm Co Ltd
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Rohm Co Ltd
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Publication date
Priority to EP08740273.1A priority Critical patent/EP2139052B1/en
Priority to US12/596,004 priority patent/US8106412B2/en
Priority to KR1020097023683A priority patent/KR101446370B1/ko
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of WO2008129963A1 publication Critical patent/WO2008129963A1/ja
Anticipated expiration legal-status Critical
Priority to US13/327,860 priority patent/US8536598B2/en
Priority to US14/286,696 priority patent/US9196808B2/en
Priority to US14/928,349 priority patent/US9450145B2/en
Priority to US15/248,332 priority patent/US9786819B2/en
Priority to US15/716,452 priority patent/US10032961B2/en
Priority to US16/015,282 priority patent/US10483435B2/en
Priority to US16/657,403 priority patent/US11616172B2/en
Priority to US18/169,555 priority patent/US20230197906A1/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

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Abstract

　不透明な半導体基板を用いて、金属反射層を形成して高輝度の半導体発光素子およびその製造方法を提供する。 　ＧａＡｓ層３と、ＧａＡｓ層の表面に配置された第１金属バッファ層２と、第１金属バッファ層上に配置された第１金属層１と、ＧａＡｓ層の裏面に配置された第２金属バッファ層４と第２金属層５とを備えるＧａＡｓ基板構造と、ＧａＡｓ基板構造上に配置され、第３金属層１２と、第３金属層上に配置される金属コンタクト層１１と、金属コンタクト層上に配置されるｐ型クラッド層１０と、ｐ型クラッド層に配置される多重量子井戸層９と、多重量子井戸層上に配置されるｎ型クラッド層８と、ｎ型クラッド層上に配置されるウィンドウ層７を備える発光ダイオード構造とから構成され、第１金属層１および第３金属層１２を用いて、ＧａＡｓ基板構造と、発光ダイオード構造を貼り付けることを特徴とする。
PCT/JP2008/057176 2007-04-16 2008-04-11 半導体発光素子およびその製造方法 Ceased WO2008129963A1 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
EP08740273.1A EP2139052B1 (en) 2007-04-16 2008-04-11 Semiconductor light-emitting device and method for manufacturing the same
US12/596,004 US8106412B2 (en) 2007-04-16 2008-04-11 Semiconductor light emitting device and fabrication method for the same
KR1020097023683A KR101446370B1 (ko) 2007-04-16 2008-04-11 반도체 발광 소자 및 그 제조 방법
US13/327,860 US8536598B2 (en) 2007-04-16 2011-12-16 Semiconductor light emitting device and fabrication method for the same
US14/286,696 US9196808B2 (en) 2007-04-16 2014-05-23 Semiconductor light emitting device
US14/928,349 US9450145B2 (en) 2007-04-16 2015-10-30 Semiconductor light emitting device
US15/248,332 US9786819B2 (en) 2007-04-16 2016-08-26 Semiconductor light emitting device
US15/716,452 US10032961B2 (en) 2007-04-16 2017-09-26 Semiconductor light emitting device
US16/015,282 US10483435B2 (en) 2007-04-16 2018-06-22 Semiconductor light emitting device
US16/657,403 US11616172B2 (en) 2007-04-16 2019-10-18 Semiconductor light emitting device with frosted semiconductor layer
US18/169,555 US20230197906A1 (en) 2007-04-16 2023-02-15 Semiconductor light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-107130 2007-04-16
JP2007107130A JP5346443B2 (ja) 2007-04-16 2007-04-16 半導体発光素子およびその製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/596,004 A-371-Of-International US8106412B2 (en) 2007-04-16 2008-04-11 Semiconductor light emitting device and fabrication method for the same
US13/327,860 Division US8536598B2 (en) 2007-04-16 2011-12-16 Semiconductor light emitting device and fabrication method for the same

Publications (1)

Publication Number Publication Date
WO2008129963A1 true WO2008129963A1 (ja) 2008-10-30

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US (10) US8106412B2 (ja)
EP (1) EP2139052B1 (ja)
JP (1) JP5346443B2 (ja)
KR (1) KR101446370B1 (ja)
CN (2) CN104409588B (ja)
TW (1) TWI481065B (ja)
WO (1) WO2008129963A1 (ja)

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US20100133507A1 (en) 2010-06-03
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US9786819B2 (en) 2017-10-10
US20140008610A1 (en) 2014-01-09
US8536598B2 (en) 2013-09-17
US20140264267A1 (en) 2014-09-18
EP2139052A1 (en) 2009-12-30
JP5346443B2 (ja) 2013-11-20
JP2008270261A (ja) 2008-11-06
CN104409588A (zh) 2015-03-11
US11616172B2 (en) 2023-03-28
US20160365489A1 (en) 2016-12-15
US9196808B2 (en) 2015-11-24
US8106412B2 (en) 2012-01-31
US20180301599A1 (en) 2018-10-18
US20230197906A1 (en) 2023-06-22
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US20160056332A1 (en) 2016-02-25
US9018650B2 (en) 2015-04-28
US10483435B2 (en) 2019-11-19
EP2139052A4 (en) 2014-01-01
US20200052163A1 (en) 2020-02-13
KR101446370B1 (ko) 2014-10-01
CN104409588B (zh) 2017-05-31
US20120132889A1 (en) 2012-05-31
US10032961B2 (en) 2018-07-24
US20180019381A1 (en) 2018-01-18
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US9450145B2 (en) 2016-09-20
CN101657912A (zh) 2010-02-24

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