WO2008132919A1 - 高信頼性金合金ボンディングワイヤ及び半導体装置 - Google Patents

高信頼性金合金ボンディングワイヤ及び半導体装置 Download PDF

Info

Publication number
WO2008132919A1
WO2008132919A1 PCT/JP2008/055702 JP2008055702W WO2008132919A1 WO 2008132919 A1 WO2008132919 A1 WO 2008132919A1 JP 2008055702 W JP2008055702 W JP 2008055702W WO 2008132919 A1 WO2008132919 A1 WO 2008132919A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
bonding wire
gold alloy
alloy bonding
highly reliable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/055702
Other languages
English (en)
French (fr)
Inventor
Hiroshi Murai
Jun Chiba
Fujio Amada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to US12/297,263 priority Critical patent/US20100171222A1/en
Priority to EP08738890A priority patent/EP2139032A4/en
Publication of WO2008132919A1 publication Critical patent/WO2008132919A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering or brazing
    • B23K35/0227—Rods or wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
    • B23K35/3013—Au as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07552—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)

Abstract

半導体装置のＡｌ電極に対する低電気抵抗で接合信頼性を向上したＡｕ合金ボンディングワイヤ及び該ワイヤによりＡｌ電極パッドに接合した半導体装置を提供するために、Ａｇを０．０２～０．３質量％、ＧｅまたはＳｉの少なくとも1 種を合計で１０～２００質量ｐｐｍおよび／またはＡｌまたはＣｕの少なくとも1 種を合計で１０～２００質量ｐｐｍ含有し、残部がＡｕからなることを特徴とする金合金ボンディングワイヤ、及び、上記金合金ボンディングワイヤにより、ＡｌまたはＡｌ合金電極パッドと接続した半導体装置を用いる。
PCT/JP2008/055702 2007-04-17 2008-03-26 高信頼性金合金ボンディングワイヤ及び半導体装置 Ceased WO2008132919A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/297,263 US20100171222A1 (en) 2007-04-17 2008-03-26 HIGH RELIABILITY Au ALLOY BONDING WIRE AND SEMICONDUCTOR DEVICE OF SAME
EP08738890A EP2139032A4 (en) 2007-04-17 2008-03-26 VERY RELIABLE GOLD ALLOY CONNECTION WIRE AND SEMICONDUCTOR DEVICE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-108733 2007-04-17
JP2007108733A JP4130843B1 (ja) 2007-04-17 2007-04-17 高信頼性金合金ボンディングワイヤ及び半導体装置

Publications (1)

Publication Number Publication Date
WO2008132919A1 true WO2008132919A1 (ja) 2008-11-06

Family

ID=39730558

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055702 Ceased WO2008132919A1 (ja) 2007-04-17 2008-03-26 高信頼性金合金ボンディングワイヤ及び半導体装置

Country Status (8)

Country Link
US (1) US20100171222A1 (ja)
EP (1) EP2139032A4 (ja)
JP (1) JP4130843B1 (ja)
KR (1) KR20100014748A (ja)
CN (1) CN101663743A (ja)
MY (1) MY148234A (ja)
TW (1) TW200844241A (ja)
WO (1) WO2008132919A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101707244B1 (ko) * 2009-07-30 2017-02-15 신닛테츠스미킹 마테리알즈 가부시키가이샤 반도체용 본딩 와이어
US8692118B2 (en) 2011-06-24 2014-04-08 Tessera, Inc. Reliable wire structure and method
JP5080682B1 (ja) * 2011-12-02 2012-11-21 田中電子工業株式会社 金−白金−パラジウム合金ボンディングワイヤ
CN102489896A (zh) * 2011-12-18 2012-06-13 湖南科技大学 钎焊金属基复合封装材料的中温钎料薄带及其制备、钎焊
CN109003903B (zh) * 2018-07-02 2020-08-18 上杭县紫金佳博电子新材料科技有限公司 一种键合金丝及其制备方法
CN110284021B (zh) * 2019-06-27 2020-06-30 袁海 提高足金、足银硬度的中间合金及其制备方法与应用

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251867A (en) 1975-10-23 1977-04-26 Nec Corp Bonding wire for semiconductor device
JPS6487734A (en) * 1987-09-29 1989-03-31 Tanaka Precious Metal Ind Material for gold extra fine wire
JPH02259032A (ja) * 1989-03-31 1990-10-19 Tatsuta Electric Wire & Cable Co Ltd ボンディング用金合金細線
JPH1083716A (ja) * 1996-09-09 1998-03-31 Nippon Steel Corp 半導体素子用金合金細線および半導体装置
JPH1098063A (ja) * 1996-07-31 1998-04-14 Tanaka Denshi Kogyo Kk ウエッジボンディング用金合金線
JPH10303236A (ja) * 1997-04-25 1998-11-13 Tanaka Denshi Kogyo Kk 半導体素子ボンディング用金合金線
JPH10303239A (ja) * 1997-04-30 1998-11-13 Nippon Steel Corp 半導体素子
JPH11126788A (ja) * 1997-10-23 1999-05-11 Tanaka Electron Ind Co Ltd Ｉｃチップ接続用金合金線

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3579493B2 (ja) * 1995-04-20 2004-10-20 新日本製鐵株式会社 半導体素子用金合金細線
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire
JP2003007757A (ja) * 2001-06-18 2003-01-10 Sumitomo Metal Mining Co Ltd 半導体素子ボンディング用金合金ワイヤ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251867A (en) 1975-10-23 1977-04-26 Nec Corp Bonding wire for semiconductor device
JPS6487734A (en) * 1987-09-29 1989-03-31 Tanaka Precious Metal Ind Material for gold extra fine wire
JPH02259032A (ja) * 1989-03-31 1990-10-19 Tatsuta Electric Wire & Cable Co Ltd ボンディング用金合金細線
JPH1098063A (ja) * 1996-07-31 1998-04-14 Tanaka Denshi Kogyo Kk ウエッジボンディング用金合金線
JPH1083716A (ja) * 1996-09-09 1998-03-31 Nippon Steel Corp 半導体素子用金合金細線および半導体装置
JPH10303236A (ja) * 1997-04-25 1998-11-13 Tanaka Denshi Kogyo Kk 半導体素子ボンディング用金合金線
JPH10303239A (ja) * 1997-04-30 1998-11-13 Nippon Steel Corp 半導体素子
JPH11126788A (ja) * 1997-10-23 1999-05-11 Tanaka Electron Ind Co Ltd Ｉｃチップ接続用金合金線

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2139032A4

Also Published As

Publication number Publication date
CN101663743A (zh) 2010-03-03
JP4130843B1 (ja) 2008-08-06
EP2139032A1 (en) 2009-12-30
MY148234A (en) 2013-03-29
EP2139032A4 (en) 2009-12-30
US20100171222A1 (en) 2010-07-08
TW200844241A (en) 2008-11-16
JP2008270371A (ja) 2008-11-06
KR20100014748A (ko) 2010-02-11

Similar Documents

Publication Publication Date Title
WO2012003315A3 (en) Corrosion-resistant copper-to-aluminum bonds
EP2373059A3 (en) Semiconductor device and microphone
MY152025A (en) Ag-au-pd ternary alloy bonding wire
WO2008079887A3 (en) Stacked mems device
MY164643A (en) Bonding wire for semiconductor
PH12016502022A1 (en) Bonding wire for semiconductor device
WO2009011392A1 (ja) 車載電子回路用Ｉｎ入り鉛フリーはんだ
EP2312627A3 (en) Semiconductor device and on-vehicle AC generator
WO2006052481A3 (en) Semiconductor device having post-mold nickel/palladium/gold plated leads
WO2008093586A1 (ja) 樹脂封止型半導体装置およびその製造方法
TW200629450A (en) Wire loop, semiconductor device having same and wire bonding method
EP2903022A3 (en) Use of a Sn-Ni-(Cu)-(P) solder alloy for flip chip bonding and a corresponding solder ball
TWI371808B (en) Au alloy bonding wire
WO2007098306A3 (en) Cap layer for an aluminum copper bond pad
MY148234A (en) High reliability au alloy bonding wire and semiconductor device of same
WO2002011203A3 (en) Plastic encapsulated semiconductor devices with improved corrosion resistance
WO2012007271A3 (de) Trägervorrichtung für einen halbleiterchip mit einer lötmittelbarriere gegen lötmittelkriechen, elektronisches bauelement damit und optoelektronisches bauelement damit
WO2007140049A3 (en) Contact surrounded by passivation and polymide and method therefor
TW200503130A (en) A semiconductor device and a method of manufacturing the same
WO2007022399A3 (en) Semiconductor assembly and packaging for high current and low inductance
WO2004075347A3 (en) Wirebonding insulated wire
TW200627584A (en) Novel method for copper wafer wire bonding
TW200639954A (en) Contact structure on chip and package thereof
WO2009086909A3 (en) Led assembly with a protective frame
WO2009088659A3 (en) Micropad formation for a semiconductor

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880012540.4

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 1020087018732

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 12297263

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2008738890

Country of ref document: EP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08738890

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12009501483

Country of ref document: PH

NENP Non-entry into the national phase

Ref country code: DE