WO2008133210A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2008133210A1
WO2008133210A1 PCT/JP2008/057617 JP2008057617W WO2008133210A1 WO 2008133210 A1 WO2008133210 A1 WO 2008133210A1 JP 2008057617 W JP2008057617 W JP 2008057617W WO 2008133210 A1 WO2008133210 A1 WO 2008133210A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor element
heat
heat mass
mass
corresponds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057617
Other languages
English (en)
French (fr)
Other versions
WO2008133210A9 (ja
Inventor
Shuji Yumoto
Shintaro Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Industries Corp
Original Assignee
Toyota Industries Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Industries Corp filed Critical Toyota Industries Corp
Priority to US12/596,338 priority Critical patent/US8405995B2/en
Priority to EP08740664.1A priority patent/EP2139036B1/en
Priority to CN2008800127378A priority patent/CN101663751B/zh
Publication of WO2008133210A1 publication Critical patent/WO2008133210A1/ja
Anticipated expiration legal-status Critical
Publication of WO2008133210A9 publication Critical patent/WO2008133210A9/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

　車両に搭載され、半導体素子と、強制冷却式の冷却器と、ヒートマスとを備える半導体モジュールが開示される。前記冷却器は、前記半導体素子で発生した熱が伝導される。前記ヒートマスは、前記半導体素子に熱的に結合するように、前記半導体素子上に接合される。前記ヒートマスは、発熱状態における前記半導体素子の高温部位に対応するヒートマスの部位の熱抵抗が、同半導体素子の低温部位に対応するヒートマスの部位の熱抵抗より低くなるように形成される。
PCT/JP2008/057617 2007-04-19 2008-04-18 半導体装置 Ceased WO2008133210A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/596,338 US8405995B2 (en) 2007-04-19 2008-04-18 Semiconductor device
EP08740664.1A EP2139036B1 (en) 2007-04-19 2008-04-18 Semiconductor device
CN2008800127378A CN101663751B (zh) 2007-04-19 2008-04-18 半导体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007110726A JP2008270485A (ja) 2007-04-19 2007-04-19 半導体装置
JP2007-110726 2007-04-19

Publications (2)

Publication Number Publication Date
WO2008133210A1 true WO2008133210A1 (ja) 2008-11-06
WO2008133210A9 WO2008133210A9 (ja) 2009-12-03

Family

ID=39925664

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057617 Ceased WO2008133210A1 (ja) 2007-04-19 2008-04-18 半導体装置

Country Status (6)

Country Link
US (1) US8405995B2 (ja)
EP (1) EP2139036B1 (ja)
JP (1) JP2008270485A (ja)
KR (1) KR101077803B1 (ja)
CN (1) CN101663751B (ja)
WO (1) WO2008133210A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016220272A (ja) * 2015-05-14 2016-12-22 三菱電機株式会社 半導体モジュール

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101015704B1 (ko) * 2008-12-01 2011-02-22 삼성전기주식회사 칩 내장 인쇄회로기판 및 그 제조방법
US7961469B2 (en) * 2009-03-31 2011-06-14 Apple Inc. Method and apparatus for distributing a thermal interface material
KR20120026855A (ko) 2010-09-10 2012-03-20 삼성전기주식회사 임베디드 볼 그리드 어레이 기판 및 그 제조 방법
JP2012199469A (ja) * 2011-03-23 2012-10-18 Toshiba Corp 電力用半導体装置
US20130250522A1 (en) * 2012-03-22 2013-09-26 Varian Medical Systems, Inc. Heat sink profile for interface to thermally conductive material
CN103779043B (zh) * 2012-10-25 2017-09-26 台达电子企业管理（上海）有限公司 大功率电磁组件
JP5708613B2 (ja) * 2012-11-01 2015-04-30 株式会社豊田自動織機 モジュール
EP2974573A2 (en) * 2013-03-15 2016-01-20 Finsix Corporation Method and apparatus for controlling heat in power conversion systems
BR112015028495B1 (pt) * 2013-05-17 2022-09-06 Sony Computer Entertainment Inc Aparelho eletrônico e método para fabricação de um aparelho eletrônico
EP2998825B1 (en) 2013-05-17 2018-11-28 Sony Interactive Entertainment Inc. Electronic device
EP2871672B1 (en) * 2013-11-06 2018-09-26 Nxp B.V. Semiconductor device
EP2871673A1 (en) * 2013-11-06 2015-05-13 Nxp B.V. Semiconductor device
CN105321890A (zh) * 2014-06-03 2016-02-10 住友电木株式会社 金属基座安装基板以及金属基座安装基板安装部件
CN105321898A (zh) * 2014-06-03 2016-02-10 住友电木株式会社 金属基座安装基板以及金属基座安装基板安装部件
JP6398849B2 (ja) * 2015-04-06 2018-10-03 株式会社デンソー 電子制御装置
US11177192B2 (en) * 2018-09-27 2021-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including heat dissipation structure and fabricating method of the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766545U (ja) * 1980-10-08 1982-04-21
JP2002270765A (ja) 2001-03-12 2002-09-20 Toshiba Corp 半導体モジュール、冷却器、および電力変換装置
EP1357592A2 (en) 2002-04-23 2003-10-29 Hewlett-Packard Company Side flow cooling device
DE102006009021A1 (de) 2005-02-28 2006-08-31 Octec Inc. Halbleiterbauelement, Elektrodenteil, und Elektrodenteil-Herstellungsverfahren

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10022341B4 (de) * 2000-05-08 2005-03-31 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Elektronisches Leistungsmodul
US20050151555A1 (en) * 2004-01-13 2005-07-14 Cookson Electronics, Inc. Cooling devices and methods of using them
JP4207896B2 (ja) * 2005-01-19 2009-01-14 富士電機デバイステクノロジー株式会社 半導体装置
US20060209516A1 (en) 2005-03-17 2006-09-21 Chengalva Suresh K Electronic assembly with integral thermal transient suppression

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766545U (ja) * 1980-10-08 1982-04-21
JP2002270765A (ja) 2001-03-12 2002-09-20 Toshiba Corp 半導体モジュール、冷却器、および電力変換装置
EP1357592A2 (en) 2002-04-23 2003-10-29 Hewlett-Packard Company Side flow cooling device
DE102006009021A1 (de) 2005-02-28 2006-08-31 Octec Inc. Halbleiterbauelement, Elektrodenteil, und Elektrodenteil-Herstellungsverfahren
JP2006237429A (ja) * 2005-02-28 2006-09-07 Okutekku:Kk 半導体装置、電極用部材および電極用部材の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2139036A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016220272A (ja) * 2015-05-14 2016-12-22 三菱電機株式会社 半導体モジュール

Also Published As

Publication number Publication date
US8405995B2 (en) 2013-03-26
EP2139036A4 (en) 2010-05-26
KR101077803B1 (ko) 2011-10-28
JP2008270485A (ja) 2008-11-06
KR20090122295A (ko) 2009-11-26
EP2139036A1 (en) 2009-12-30
CN101663751A (zh) 2010-03-03
CN101663751B (zh) 2011-08-31
US20100110638A1 (en) 2010-05-06
EP2139036B1 (en) 2013-07-10
WO2008133210A9 (ja) 2009-12-03

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