WO2008136409A1 - 炭化珪素ツェナーダイオード - Google Patents

炭化珪素ツェナーダイオード Download PDF

Info

Publication number
WO2008136409A1
WO2008136409A1 PCT/JP2008/058068 JP2008058068W WO2008136409A1 WO 2008136409 A1 WO2008136409 A1 WO 2008136409A1 JP 2008058068 W JP2008058068 W JP 2008058068W WO 2008136409 A1 WO2008136409 A1 WO 2008136409A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
type silicon
conductivity type
conductive layer
zener diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/058068
Other languages
English (en)
French (fr)
Inventor
Ryosuke Ishii
Koji Nakayama
Yoshitaka Sugawara
Hidekazu Tsuchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Research Institute of Electric Power Industry
Kansai Electric Power Co Inc
Original Assignee
Central Research Institute of Electric Power Industry
Kansai Electric Power Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Research Institute of Electric Power Industry, Kansai Electric Power Co Inc filed Critical Central Research Institute of Electric Power Industry
Priority to US12/597,121 priority Critical patent/US8093599B2/en
Priority to EP08740870A priority patent/EP2154725A4/en
Publication of WO2008136409A1 publication Critical patent/WO2008136409A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/021—Manufacture or treatment of breakdown diodes
    • H10D8/022—Manufacture or treatment of breakdown diodes of Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

　ｐｎ接合界面のメサ端部に電界が集中することがなく、電流容量が高いメサ型の炭化珪素ツェナーダイオードを提供する。本発明に係る炭化珪素ツェナーダイオードは、第１導電型炭化珪素単結晶基板上に第１導電型炭化珪素導電層が形成され、前記第１導電型炭化珪素導電層上に第２導電型炭化珪素導電層が形成された、メサ構造をもつバイポーラ型半導体装置であって、逆方向電圧印加時に、前記第１導電型炭化珪素導電層及び前記第２導電型炭化珪素導電層の接合界面で形成される空乏層が、前記第１導電型炭化珪素導電層に形成されているメサコーナー部に到達しないことを特徴とする。
PCT/JP2008/058068 2007-04-26 2008-04-25 炭化珪素ツェナーダイオード Ceased WO2008136409A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/597,121 US8093599B2 (en) 2007-04-26 2008-04-25 Silicon carbide Zener diode
EP08740870A EP2154725A4 (en) 2007-04-26 2008-04-25 SILICON CARBIDE-ZENER

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-116736 2007-04-26
JP2007116736A JP5213350B2 (ja) 2007-04-26 2007-04-26 炭化珪素ツェナーダイオード

Publications (1)

Publication Number Publication Date
WO2008136409A1 true WO2008136409A1 (ja) 2008-11-13

Family

ID=39943516

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058068 Ceased WO2008136409A1 (ja) 2007-04-26 2008-04-25 炭化珪素ツェナーダイオード

Country Status (4)

Country Link
US (1) US8093599B2 (ja)
EP (1) EP2154725A4 (ja)
JP (1) JP5213350B2 (ja)
WO (1) WO2008136409A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114883417A (zh) * 2022-07-04 2022-08-09 深圳市威兆半导体有限公司 一种具有导通压降自钳位的半导体器件及其制备方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101068176B1 (ko) 2010-06-09 2011-09-27 (재)나노소자특화팹센터 경사형 제너 다이오드
JP5691259B2 (ja) 2010-06-22 2015-04-01 株式会社デンソー 半導体装置
JP5106604B2 (ja) * 2010-09-07 2012-12-26 株式会社東芝 半導体装置およびその製造方法
WO2014021365A1 (ja) * 2012-07-31 2014-02-06 独立行政法人産業技術総合研究所 半導体構造物、半導体装置及び該半導体構造物の製造方法
JP5924313B2 (ja) * 2012-08-06 2016-05-25 株式会社デンソー ダイオード
CN104810409A (zh) * 2014-01-26 2015-07-29 国家电网公司 一种碳化硅二极管及其制造方法
JP6857488B2 (ja) * 2016-11-29 2021-04-14 株式会社日立製作所 半導体装置の製造方法
CN108538923A (zh) * 2018-05-16 2018-09-14 南京大学 一种复合终端结构的氮化镓二极管
US10355144B1 (en) * 2018-07-23 2019-07-16 Amazing Microelectronic Corp. Heat-dissipating Zener diode

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54112189A (en) * 1978-02-22 1979-09-01 Mitsubishi Electric Corp Mesa semiconductor device
JPH01260863A (ja) * 1988-04-12 1989-10-18 Citizen Watch Co Ltd Ｐｎ接合ダイオード
JPH0738123A (ja) * 1993-06-23 1995-02-07 Robert Bosch Gmbh 半導体装置及びその製造方法
JP2000340807A (ja) * 1999-05-27 2000-12-08 Hitachi Ltd サージアブソーバ
JP2002185015A (ja) 2000-12-12 2002-06-28 Kansai Electric Power Co Inc:The 高耐電圧半導体装置
JP2002313936A (ja) * 2001-04-16 2002-10-25 Auto Network Gijutsu Kenkyusho:Kk 半導体素子
JP2006013129A (ja) * 2004-06-25 2006-01-12 Nec Electronics Corp 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740477A (en) * 1985-10-04 1988-04-26 General Instrument Corporation Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics
US4775643A (en) * 1987-06-01 1988-10-04 Motorola Inc. Mesa zener diode and method of manufacture thereof
JPH10256572A (ja) * 1997-03-11 1998-09-25 Mitsubishi Materials Corp サージ吸収素子
JP3416930B2 (ja) * 1998-01-28 2003-06-16 三洋電機株式会社 ＳｉＣ半導体装置の製造方法
JP4872158B2 (ja) * 2001-03-05 2012-02-08 住友電気工業株式会社 ショットキーダイオード、ｐｎ接合ダイオード、ｐｉｎ接合ダイオード、および製造方法
JP4317189B2 (ja) * 2003-07-30 2009-08-19 関西電力株式会社 高耐熱半導体装置
US9455356B2 (en) * 2006-02-28 2016-09-27 Cree, Inc. High power silicon carbide (SiC) PiN diodes having low forward voltage drops
JP5411422B2 (ja) 2007-01-31 2014-02-12 関西電力株式会社 バイポーラ型半導体装置、その製造方法およびツェナー電圧の制御方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54112189A (en) * 1978-02-22 1979-09-01 Mitsubishi Electric Corp Mesa semiconductor device
JPH01260863A (ja) * 1988-04-12 1989-10-18 Citizen Watch Co Ltd Ｐｎ接合ダイオード
JPH0738123A (ja) * 1993-06-23 1995-02-07 Robert Bosch Gmbh 半導体装置及びその製造方法
JP2000340807A (ja) * 1999-05-27 2000-12-08 Hitachi Ltd サージアブソーバ
JP2002185015A (ja) 2000-12-12 2002-06-28 Kansai Electric Power Co Inc:The 高耐電圧半導体装置
JP2002313936A (ja) * 2001-04-16 2002-10-25 Auto Network Gijutsu Kenkyusho:Kk 半導体素子
JP2006013129A (ja) * 2004-06-25 2006-01-12 Nec Electronics Corp 半導体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2154725A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114883417A (zh) * 2022-07-04 2022-08-09 深圳市威兆半导体有限公司 一种具有导通压降自钳位的半导体器件及其制备方法

Also Published As

Publication number Publication date
US8093599B2 (en) 2012-01-10
JP5213350B2 (ja) 2013-06-19
EP2154725A1 (en) 2010-02-17
EP2154725A4 (en) 2011-05-25
US20100084663A1 (en) 2010-04-08
JP2008277396A (ja) 2008-11-13

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