WO2009005261A3 - Nanofil monocristallin en métal noble et son procédé de fabrication - Google Patents

Nanofil monocristallin en métal noble et son procédé de fabrication Download PDF

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Publication number
WO2009005261A3
WO2009005261A3 PCT/KR2008/003737 KR2008003737W WO2009005261A3 WO 2009005261 A3 WO2009005261 A3 WO 2009005261A3 KR 2008003737 W KR2008003737 W KR 2008003737W WO 2009005261 A3 WO2009005261 A3 WO 2009005261A3
Authority
WO
WIPO (PCT)
Prior art keywords
noble metal
single crystalline
metal nanowire
nanowire
fabrication method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2008/003737
Other languages
English (en)
Other versions
WO2009005261A2 (fr
WO2009005261A4 (fr
Inventor
Bongsoo Kim
Yeongdong Yoo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Advanced Institute of Science and Technology KAIST
Original Assignee
Korea Advanced Institute of Science and Technology KAIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070065030A external-priority patent/KR100906503B1/ko
Priority claimed from KR1020080036360A external-priority patent/KR100952615B1/ko
Application filed by Korea Advanced Institute of Science and Technology KAIST filed Critical Korea Advanced Institute of Science and Technology KAIST
Priority to US12/667,118 priority Critical patent/US20100233426A1/en
Priority to JP2010514626A priority patent/JP5318866B2/ja
Publication of WO2009005261A2 publication Critical patent/WO2009005261A2/fr
Publication of WO2009005261A3 publication Critical patent/WO2009005261A3/fr
Publication of WO2009005261A4 publication Critical patent/WO2009005261A4/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/007—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Nanotechnology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)

Abstract

Procédé de fabrication d'un nanofil en métal noble monocristallin faisant intervenir un oxyde de métal noble, un matériau en métal noble ou un halogénure de métal noble en tant que précurseur et un nanofil en métal noble monocristallin, et plus particulièrement un procédé de fabrication d'un nanofil en métal noble monocristallin sur un substrat monocristallin par traitement thermique d'un précurseur disposé sur la partie avant d'un four et d'un substrat disposé sur la partie arrière d'un four dans une atmosphère à flux inerte, et un nanofil en métal noble monocristallin obtenu par ce procédé de fabrication. La fabrication du nanofil de l'invention fait appel à un procédé de transport en phase vapeur non catalytique. Le nanofil ainsi obtenu par ce processus simple et reproductible est exempt de défaut et d'impuretés. D'une qualité et d'une pureté élevées, ce nanofil en métal noble est monocristallin dans son intégralité.
PCT/KR2008/003737 2007-06-29 2008-06-27 Nanofil monocristallin en métal noble et son procédé de fabrication Ceased WO2009005261A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/667,118 US20100233426A1 (en) 2007-06-29 2008-06-27 Noble metal single crystalline nanowire and the fabrication method thereof
JP2010514626A JP5318866B2 (ja) 2007-06-29 2008-06-27 貴金属単結晶ナノワイヤ及びその製造方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2007-0064993 2007-06-29
KR10-2007-0065030 2007-06-29
KR1020070065030A KR100906503B1 (ko) 2007-06-29 2007-06-29 귀금속 단결정 나노와이어 및 그 제조방법
KR20070064993 2007-06-29
KR1020080036360A KR100952615B1 (ko) 2007-06-29 2008-04-18 방향성을 갖는 귀금속 단결정 나노와이어 및 그 제조방법
KR10-2008-0036360 2008-04-18

Publications (3)

Publication Number Publication Date
WO2009005261A2 WO2009005261A2 (fr) 2009-01-08
WO2009005261A3 true WO2009005261A3 (fr) 2009-03-12
WO2009005261A4 WO2009005261A4 (fr) 2009-04-30

Family

ID=40226649

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/003737 Ceased WO2009005261A2 (fr) 2007-06-29 2008-06-27 Nanofil monocristallin en métal noble et son procédé de fabrication

Country Status (1)

Country Link
WO (1) WO2009005261A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009134687A2 (fr) * 2008-04-27 2009-11-05 The Board Of Trustees Of The University Of Illinois Procédé pour façonner un nanofil semiconducteur planaire
DE102008043447A1 (de) * 2008-11-04 2010-05-06 Korea Advanced Institute Of Science And Technology Orientierter einkristalliner Edelmetall-Nanodraht und Verfahren zur Herstellung desselben
JP2010255093A (ja) * 2009-04-23 2010-11-11 Korea Advanced Inst Of Science & Technol 単結晶ツインフリー貴金属ナノワイヤ及びハロゲン化貴金属を利用した単結晶ツインフリー貴金属ナノワイヤの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003068674A1 (fr) * 2002-02-15 2003-08-21 Japan Science And Technology Agency Structure de fils nanometriques en metal noble et leur procede de production
JP2006117519A (ja) * 2004-10-21 2006-05-11 Sharp Corp 酸化イリジウムナノワイヤおよびそれを形成する方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003068674A1 (fr) * 2002-02-15 2003-08-21 Japan Science And Technology Agency Structure de fils nanometriques en metal noble et leur procede de production
JP2006117519A (ja) * 2004-10-21 2006-05-11 Sharp Corp 酸化イリジウムナノワイヤおよびそれを形成する方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HONG, BYUNG HEE ET AL.: "Ultrathin Single-Crystalline Silver Nanowire Arrays Formed in an Ambient Solution Phase", SCIENCE, vol. 294, no. 348, 12 October 2001 (2001-10-12), pages 348 - 351, XP055352638 *
KIM, KYUNGTAE ET AL.: "Pd nanowire sensors for hydrogen detection", SENSORS, 2004, PROCEEDINGS OF IEEE., vol. 2, pages 705 - 707, XP055352643 *
RAMIN BANAN SADEGHIAN ET AL.: "A Low Pressure Gas Ionization Sensor Using Freestanding Gold Nanowires", 2007 IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (ISIE 2007), 4 June 2007 (2007-06-04), pages 1387 - 1390, XP031156339 *

Also Published As

Publication number Publication date
WO2009005261A2 (fr) 2009-01-08
WO2009005261A4 (fr) 2009-04-30

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