WO2009005394A1 - Dispositif pour mesurer des valeurs mécaniques (et variantes) et procédé de fabrication correspondant - Google Patents

Dispositif pour mesurer des valeurs mécaniques (et variantes) et procédé de fabrication correspondant Download PDF

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Publication number
WO2009005394A1
WO2009005394A1 PCT/RU2007/000697 RU2007000697W WO2009005394A1 WO 2009005394 A1 WO2009005394 A1 WO 2009005394A1 RU 2007000697 W RU2007000697 W RU 2007000697W WO 2009005394 A1 WO2009005394 A1 WO 2009005394A1
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WO
WIPO (PCT)
Prior art keywords
strain
membrane
strain gauges
elements
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/RU2007/000697
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English (en)
Russian (ru)
Inventor
Nikolay Mikhaylovich Volodin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OBSCHESTVO S OGRANICHENNOI OTVETSTVENNOSTYU 'KOSMICHESKIE SISTEMY SPASENIYA'
OBSCHESTVO S OGRANICHENNOI OTVETSTVENNOSTYU "KOSMICHESKIE SISTEMY SPASENIYA"
Original Assignee
OBSCHESTVO S OGRANICHENNOI OTVETSTVENNOSTYU 'KOSMICHESKIE SISTEMY SPASENIYA'
OBSCHESTVO S OGRANICHENNOI OTVETSTVENNOSTYU "KOSMICHESKIE SISTEMY SPASENIYA"
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Filing date
Publication date
Application filed by OBSCHESTVO S OGRANICHENNOI OTVETSTVENNOSTYU 'KOSMICHESKIE SISTEMY SPASENIYA', OBSCHESTVO S OGRANICHENNOI OTVETSTVENNOSTYU "KOSMICHESKIE SISTEMY SPASENIYA" filed Critical OBSCHESTVO S OGRANICHENNOI OTVETSTVENNOSTYU 'KOSMICHESKIE SISTEMY SPASENIYA'
Publication of WO2009005394A1 publication Critical patent/WO2009005394A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/04—Means for compensating for effects of changes of temperature, i.e. other than electric compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm

Definitions

  • the invention relates to instrumentation, in particular to sensors intended for use in various fields of science and technology related to the measurement of mechanical quantities.
  • the disadvantage of this sensor is its low sensitivity.
  • the closest technical solution is a pressure sensor containing an elastic element in the form of a thin-walled cylinder with strain gauges glued to the outer surface along the cylinder forming, of which two are active and two are compensation. Strain gages are electrically connected to the bridge circuit "Tensometry in mechanical engineering)) Reference manual, ed. Makarova P.A., M, “Machinery”, 1975, p. 147, fig. 766.
  • a disadvantage of the known design is the low reliability. Another disadvantage of the known design is the reduced sensitivity. A disadvantage of the known design is also the low level of manufacturability associated with the non-identical size and shape of the jumpers connecting the strain gauges to the measuring bridge, which leads to the need for additional sensor settings.
  • Known strain gauge pressure transducer containing a crystal of a semiconductor material of one type of conductivity with a membrane region on which another type of conductivity is formed strain gauges and switching sections connecting the strain gauges in the measuring bridge and with metallized pads on the peripheral region of the crystal, an insulating layer covering the surface of the crystal from the side strain gauges and having openings above metallized areas, and a glass ring connected to the cree thallus of the peripheral region by the strain gages, thus to enhance resistance to aggressive environments and reliability during operation, holes are made in it on the insulating layer under the glass ring and a layer of amorphous crystal material 0.5-5.0 microns thick is applied, covering the insulating layer with the aforementioned holes to metallized sites, and on the layer of amorphous material fixed ring of glass (RU Ns 1431470, G01 L9 / 04, publ. 1996.08.20).
  • a method for manufacturing a strain gauge pressure transducer which consists in forming a strain gauge circuit coated with an insulating layer on a semiconductor wafer, dividing the wafers into crystals, connecting the crystal from the strain gauge side with a glass ring, while increasing reliability in operation and manufacturing in holes are made under the insulating layer under the glass, then the insulating layer with said holes is covered with a layer of an amorphous semiconductor material ala with a thickness of 0.5-5.0 ⁇ m, a glass ring is placed on the layer of amorphous material and an electrical voltage of 1 3 kV is applied between the glass and the crystal at 300-450 ° C.
  • This technical solution was adopted as a prototype for the claimed method and the first embodiment sensor performance.
  • the technical result achieved in this case is to increase the sensitivity of the sensor, increase resistance to aggressive environments and increase reliability during operation and manufacture.
  • the device for measuring mechanical quantities representing a strain gauge transducer containing a metal case in the form of a cylindrical glass with a thin-walled bottom, which is an elastic element in the form of a membrane, on the outer surface of which are formed strain gauges located in the compression and tension zones, switching sections, integrally or by hanging mounting connecting the strain gauges to the measuring bridge and with metallized pads on the peripheral region of the surface of the bottom of the glass, compensation elements for temperature compensation and regulation the output signal, as well as an insulating layer covering these elements on the outer surface of the bottom of the glass, and strain gauges made of samarium monosulfide are mounted on a dielectric layer of aluminum oxide or silicon oxide or silicon dioxide, which is fixed to the outer surface of the bottom of the glass through an adhesive layer, while each arm of the Wheatstone measuring bridge is made of one strain gauge or a group of strain gauges connected in series or parallel to each other, in compression zones in the annular region single strain gauges or groups of strain gauges distantly
  • the membrane is made thickened with respect to the thickness of the membrane in the annular region of the transition of the membrane into the wall of the glass of the circumferential section. design, according to which from the open side the glass can be closed by an additional membrane.
  • the specified technical result is also achieved by the fact that in the system for measuring mechanical quantities, it is a strain gauge transducer containing a metal casing, on the surface of which are mounted strain gages located in the compression and extension zones, switching sections, integrally or by hanging mounting connecting the strain gages to the measuring bridge and with metallized pads on the peripheral area of the housing, compensation elements for temperature compensation and output regulation the bottom of the signal, as well as an insulating layer covering these elements on the surface of the cylinder, and the metal case is made in the form of a cantilever beam with a through hole, the strain gages made of samarium monosulfide are mounted on a dielectric layer of aluminum oxide or silicon oxide or silicon dioxide, which is fixed on the surface metal housing through an adhesive layer of chromium, with each arm of the Wheatstone measuring bridge made of one strain gauge or a group of strain gauges connected by a tionary or in parallel with each other and located in distant areas of maximum deformations of stretch and compression, metallized pad composed of at least
  • the specified technical result for the method is achieved by the fact that in the method of manufacturing a strain gauge sensor, which consists in the fact that they take an elastic element on the surface of which deformation zones are determined from the measured parameter, then at least two zones on the elastic element are determined in which the deformations from the measured parameter have opposite signs, in these zones the conjugate points are determined at which the temperature and temperature deformations at each moment of exposure have the same values and sign (uniform temperature conditions) , in these places two strain gages are installed, which are assembled into a bridge circuit so that the strain gages that perceive deformations of different signs are located in adjacent shoulders, as well as they cover the switching sections connecting the strain gauges to the measuring bridge and with metallized pads, compensation elements for temperature compensation and normalization of the output signal, and cover these electrical elements with an insulating layer that an adhesive layer of chromium is applied to the elastic element, over which a dielectric layer of aluminum oxide is fixed or silicon oxide or silicon dioxide, strain gages are made of samarium monosulfide
  • dielectric and metal elements are evaporated thermally, by an electron gun or magnetron, and samarium monosulfide is evaporated in an explosive manner from a tungsten or tantalum heated boat.
  • FIG. 1 is a transverse section of the sensor in the form of a glass with a flat bottom; first embodiment; FIG. 2 is a view A of FIG. one ; FIG. 3 shows the topology of elements on a flat-center membrane for the embodiment of FIG. one ; FIG. 4 is a cross-sectional view of a sensor in the form of a cantilever beam with a hole, a second embodiment; FIG. 5 is a view A of FIG. four; FIG. 6 is an embodiment of an elastic element; FIG. 7 is a topology of the elements of FIG. 6.
  • strain gauge pressure, force, weight, acceleration, displacement, etc.
  • This strain gauge contains a metal housing
  • FIG. 1 performing the function of an elastic element, which in this embodiment is made in the form of a cylindrical glass with a thin-walled bottom 2, which is an elastic element in the form of a membrane.
  • the first strain gages 3 are placed in the zone of negative (compression zone) deformations, and the second 4 in the zone of positive membrane deformations (tension zone).
  • strain gages located in the compression and extension zones are formed on the outer surface of the membrane.
  • FIG. 3 The topology of the elements on a flat-center membrane for the embodiment of FIG. 1 is shown in FIG. 3.
  • switching sections 5 connecting elements
  • metallized pads on the peripheral region of the surface of the bottom of the glass, in which compensation elements 6 are placed for temperature compensation of sensitivity changes and “drift” of zero, as well as the normalization of the output signal.
  • Contact metallized pads 7 are made of at least two layers, the lower of which has a minimum transient electrical resistance, and the top is designed for soldering (well soldered (Ni, Fe).
  • soldering well soldered (Ni, Fe).
  • FIG. 4 is a cross-sectional view of a sensor in the form of a cantilever beam with a hole. This design is designed to measure strain and load at local application of ultimate force.
  • FIG. 6 - the housing repeats the execution of FIG. 1, but in its central part there is a rigid center, along the edges of which there is a stretching zone.
  • Strain gages are made of samarium monosulfide and are mounted on a dielectric layer of aluminum oxide (ALO3) or silicon oxide (SiO) or silicon dioxide (SiO2), which is fixed to the outer surface of the bottom of the glass through an adhesive layer, for example, of chromium.
  • ALO3 aluminum oxide
  • SiO silicon oxide
  • SiO2 silicon dioxide
  • Each arm of the Wheatstone measuring bridge is made of one strain gauge or a group of strain gauges connected in series or parallel to each other ((for exact balancing of the bridge).
  • In the compression zones in the annular region of the transition of the membrane into the glass wall and in the tension zones in the region of the central part of the membrane circles are single strain gages or groups of strain gages that are distantly located around a circle.
  • deformation zones from the measured parameter are determined, at least two zones on the elastic element are determined in which the deformations from the measured parameter have opposite signs, two or more strain gages are installed in these places, which are assembled into the bridge circuit so that the strain gages sensing deformations of a different sign, located in adjacent shoulders, and also place switching sections connecting strain gages to the measuring bridge and with metallized platforms, compensatory elements for temperature compensation, and normalizing the output signal, and cover said electrically insulating layer elements.
  • an adhesive layer for example, of chromium, is applied to the elastic element, over which a dielectric layer of aluminum oxide or silicon oxide or silicon dioxide is fixed.
  • the reliability of the sensor is uniquely determined by the degree of their attachment to the dielectric substrate, which is basic for them surface.
  • the substrate must be securely attached to the surface of the carrier, that is, the housing.
  • the sensors used a technical technique for the use of such materials that have high adhesive properties with respect to each other.
  • the dielectric layer of aluminum oxide or silicon oxide or silicon dioxide has insufficient adhesion to the body material (metal), but it is well bonded to chromium, which, in turn, has high adhesive properties with metals, which are widely used in electronics for manufacturing electronic devices.
  • metal metal
  • chromium metal
  • these electrical elements are formed on the elastic element by vacuum deposition in the chamber through masks without evacuating the chamber at a temperature of the elastic element in the range of 100-450 ° C, while samarium monosulfide is sprayed to obtain strain gauges in the chamber maintain a vacuum in the range of 10 ⁇ 6 - 10 ⁇ 3 mm.
  • dielectric and metal elements are evaporated thermally, by an electron gun or magnetron, and samarium monosulfide is evaporated in an explosive manner from a tungsten or tantalum boat heated to a certain temperature.
  • the electrical components are covered with a protective electric layer to exclude the influence of the external environment on the electrical part of the sensor.
  • a protective electric layer to exclude the influence of the external environment on the electrical part of the sensor.
  • strain gauges with extended sections located on the central and peripheral thickenings in the zone of influence of minimal deformations from the measured pressure increases manufacturability and reliability due to the exclusion of the possibility of excessive reduction of the width of the strain gauges during laser or erosion adjustment of the values of the strain gauges, as well as due to the location of the sections (extended sections of the strain gauges) in the zone of influence of minimal deformations from the measured pressure, as a result of which o reduces the impact of deformations on damaged as a result of fitting sections of strain gages, which makes resistors more stable and reliable.
  • connecting elements or pads identical in shape and size and placing them symmetrically with respect to the center of the membrane increases manufacturability, as it allows more accurate correction of the additive temperature error due to the possibility of more accurately taking into account the temperature field on the membrane, which, due to the symmetry of the sensor design, is distributed over membrane symmetrically with respect to the center of the membrane.
  • the pressure sensor operates as follows.
  • the measured pressure acts on the inner surfaces of the housing 1.
  • deformations occur on the planar surface of the membrane, which are perceived by Zi 5 strain gauges (or groups of thermistors).
  • the change in the resistance of the strain gages is converted by a bridge circuit, in which the strain gages are included, into the output voltage removed from the contact conductors.
  • the output signal In connection with the partial placement of strain gauges on the surface of the central part of the membrane and the peripheral area adjacent to the surface of the thin part of the membrane, i.e. in the zone of maximum deformations from the measured pressure, the output signal, and, consequently, the sensitivity increases.
  • this arrangement increases the reliability and manufacturability due to improved heat dissipation conditions for dissipated power and increased accuracy of the resistance of the strain gages due to the possibility of increasing the geometric dimensions of the strain gages at given membrane sizes.
  • the implementation of the expanded sections of the strain gages leads to an even greater increase in sensitivity in connection with the placement of most resistance of strain gages in the zone of the greatest deformations from the measured pressure while increasing reliability and manufacturability by increasing the area of the strain gages and the accuracy of their manufacture.
  • the present invention is industrially applicable, as it can be industrially mastered using spraying techniques in a vacuum chamber.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Force In General (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

L'invention concerne un dispositif pour mesurer des valeurs mécaniques (un convertisseur tensiométrique) qui comprend un boîtier métallique sous la forme d'une coupe cylindrique à fond mince à la surface externe de laquelle on a formé des piézorésistances, des éléments de compensation destinés à la compensation de température et à la standardisation du signal de sortie, une couche d'isolation recouvrant ces éléments à la surface externe du fond de la coupe; les piézorésistances en monosulfure de samarium sont fixées dans la couche diélectrique en oxyde d'aluminium ou en dioxyde de silicium, fixée à la surface externe du fond de la coupe via une couche d'adhérence en chrome. Chaque branche d'un pont de mesure de Wheatstone est constituée d'une piézorésistance ou d'un groupe de piézorésistances connectées en parallèle ou en série, dans les zones de compression dans la région annulaire de transition de la membrane vers la paroi de la coupe et dans les zones d'étirement dans la région de la partie centrale de la membrane dans laquelle sont disposées à distance, sur la périphérie, des piézorésistances isolées ou des groupes de piézorésistances ménagés à distance. Des plots métallisés sont constitués d'au moins deux couches, la couche inférieure possédant une résistance électrique de transition minimale et la couche supérieure étant destinée au soudage.
PCT/RU2007/000697 2007-07-05 2007-12-12 Dispositif pour mesurer des valeurs mécaniques (et variantes) et procédé de fabrication correspondant Ceased WO2009005394A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2007125388/28A RU2346250C1 (ru) 2007-07-05 2007-07-05 Устройство для измерения механических величин (варианты) и способ его изготовления
RU2007125388 2007-07-05

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102121856A (zh) * 2009-12-14 2011-07-13 三菱电机株式会社 半导体压力传感器及其制造方法
CN114185307A (zh) * 2021-11-23 2022-03-15 大连理工大学 一种大型薄壁件加工变形分区补偿方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2457577C1 (ru) * 2011-03-24 2012-07-27 Открытое акционерное общество "Научно-исследовательский институт физических измерений" Многофункциональный измерительный модуль

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5314572A (en) * 1990-08-17 1994-05-24 Analog Devices, Inc. Method for fabricating microstructures
SU1820790A1 (ru) * 1991-05-30 1995-03-27 Физико-технический институт им.А.Ф.Иоффе Способ изготовления полупроводниковых тензорезисторов на основе моносульфида самария
RU2035089C1 (ru) * 1993-08-09 1995-05-10 Акционерная компания "Технологический центр" Интегральный преобразователь давления
SU1771272A1 (ru) * 1990-03-23 1995-12-20 Научно-исследовательский институт физических измерений Датчик давления и способ его изготовления
SU1431470A1 (ru) * 1986-12-29 1996-08-20 П.Г. Михайлов Тензометрический преобразователь давления и способ его изготовления

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2237873C2 (ru) * 2002-06-19 2004-10-10 Новосибирский государственный технический университет Тензопреобразователь давления

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1431470A1 (ru) * 1986-12-29 1996-08-20 П.Г. Михайлов Тензометрический преобразователь давления и способ его изготовления
SU1771272A1 (ru) * 1990-03-23 1995-12-20 Научно-исследовательский институт физических измерений Датчик давления и способ его изготовления
US5314572A (en) * 1990-08-17 1994-05-24 Analog Devices, Inc. Method for fabricating microstructures
SU1820790A1 (ru) * 1991-05-30 1995-03-27 Физико-технический институт им.А.Ф.Иоффе Способ изготовления полупроводниковых тензорезисторов на основе моносульфида самария
RU2035089C1 (ru) * 1993-08-09 1995-05-10 Акционерная компания "Технологический центр" Интегральный преобразователь давления

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102121856A (zh) * 2009-12-14 2011-07-13 三菱电机株式会社 半导体压力传感器及其制造方法
CN102121856B (zh) * 2009-12-14 2013-10-16 三菱电机株式会社 半导体压力传感器及其制造方法
CN114185307A (zh) * 2021-11-23 2022-03-15 大连理工大学 一种大型薄壁件加工变形分区补偿方法

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