WO2009007524A3 - Procede de depôt chimique en phase vapeur assiste par plasma d'un film carbone/metal - Google Patents

Procede de depôt chimique en phase vapeur assiste par plasma d'un film carbone/metal Download PDF

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Publication number
WO2009007524A3
WO2009007524A3 PCT/FR2008/000764 FR2008000764W WO2009007524A3 WO 2009007524 A3 WO2009007524 A3 WO 2009007524A3 FR 2008000764 W FR2008000764 W FR 2008000764W WO 2009007524 A3 WO2009007524 A3 WO 2009007524A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
carbon
chemical deposition
phase chemical
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2008/000764
Other languages
English (en)
Other versions
WO2009007524A2 (fr
Inventor
Stephanie Thollon
Sebastien Donet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of WO2009007524A2 publication Critical patent/WO2009007524A2/fr
Publication of WO2009007524A3 publication Critical patent/WO2009007524A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemically Coating (AREA)

Abstract

Un film en matériau composite comportant du carbone et au moins un métal est déposé par dépôt chimique en phase vapeur assisté par plasma. Le dépôt est réalisé à partir d'au moins une solution chimique comportant un précurseur métallique, solide ou liquide, dissous dans au moins un solvant qui constitue une source de carbone. De plus, le plasma est généré à une fréquence comprise entre 2OkHz et 50OkHz et avantageusement comprise entre 40 kHz et 440 kHz.
PCT/FR2008/000764 2007-06-26 2008-06-05 Procede de depôt chimique en phase vapeur assiste par plasma d'un film carbone/metal Ceased WO2009007524A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0704572 2007-06-26
FR0704572A FR2918078B1 (fr) 2007-06-26 2007-06-26 Procede de depot chimique en phase vapeur assiste par plasma d'un film carbone/metal.

Publications (2)

Publication Number Publication Date
WO2009007524A2 WO2009007524A2 (fr) 2009-01-15
WO2009007524A3 true WO2009007524A3 (fr) 2009-05-22

Family

ID=39025615

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2008/000764 Ceased WO2009007524A2 (fr) 2007-06-26 2008-06-05 Procede de depôt chimique en phase vapeur assiste par plasma d'un film carbone/metal

Country Status (2)

Country Link
FR (1) FR2918078B1 (fr)
WO (1) WO2009007524A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115911437A (zh) * 2022-11-11 2023-04-04 西部金属材料股份有限公司 一种金属纤维毡复合材料及其制备方法和应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030026921A1 (en) * 2000-07-06 2003-02-06 Mayumi Ueno Low temperature synthesis of semiconductor fiber

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030026921A1 (en) * 2000-07-06 2003-02-06 Mayumi Ueno Low temperature synthesis of semiconductor fiber

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PAULEAU Y ET AL: "Nanostructured copper-carbon composite thin films produced by sputter deposition/microwave plasma-enhanced chemical vapor deposition dual process", MATERIALS LETTERS, NORTH HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, vol. 56, no. 6, November 2002 (2002-11-01), pages 1053 - 1058, XP004389842, ISSN: 0167-577X *
WROBEL A M ET AL: "PLASMA CHEMICAL VAPOUR DEPOSITION OF IRON-CONTAINING HYDROGENATED CARBON FILMS USING A SINGLE-SOURCE PRECURSOR", JOURNAL OF CHEMICAL VAPOR DEPOSITION, TECHNOMIC PUBLISHING, LANCASTER, PA, US, vol. 1, 1992, pages 42 - 58, XP000901787, ISSN: 1056-7860 *

Also Published As

Publication number Publication date
WO2009007524A2 (fr) 2009-01-15
FR2918078A1 (fr) 2009-01-02
FR2918078B1 (fr) 2009-10-09

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