WO2009010052A3 - Modul und verfahren zu seiner herstellung - Google Patents

Modul und verfahren zu seiner herstellung Download PDF

Info

Publication number
WO2009010052A3
WO2009010052A3 PCT/DE2008/001175 DE2008001175W WO2009010052A3 WO 2009010052 A3 WO2009010052 A3 WO 2009010052A3 DE 2008001175 W DE2008001175 W DE 2008001175W WO 2009010052 A3 WO2009010052 A3 WO 2009010052A3
Authority
WO
WIPO (PCT)
Prior art keywords
electronic components
substrate
base electrode
active layer
optically active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2008/001175
Other languages
English (en)
French (fr)
Other versions
WO2009010052A2 (de
Inventor
Olaf Ruediger Hild
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to US12/666,949 priority Critical patent/US8212264B2/en
Priority to JP2010516368A priority patent/JP5212995B2/ja
Publication of WO2009010052A2 publication Critical patent/WO2009010052A2/de
Publication of WO2009010052A3 publication Critical patent/WO2009010052A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/906—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the materials of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/901—Assemblies of multiple devices comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
  • Structure Of Printed Boards (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

Die Erfindung betrifft Module und Verfahren zu ihrer Herstellung, bei denen auf einem flexiblen Substrat flächige elektronische Bauelemente ausgebildet sind, die elektrisch leitend miteinander verbunden sein sollen, wobei mehrere elektronische Bauelemente eine Reihenschaltung bilden sollen. Aufgabe der Erfindung ist es, Module zur Verfügung zu stellen, die kostegünstig hergestellt werden können und bei denen auftretende Defekte an einzelnen elektronischen Bauelementen oder an elektrisch leitenden Verbindungen zwischen elektronischen Bauelementen einfach kompensiert werden können. Beim erfindungsgemäßen Modul sind dem flächige elektronische Bauelemente, die jeweils mit einer optisch aktiven Schicht, die auf einer auf einem flexibel verformbaren Substrat ausgebildeten Grundelektrode ausgebildet und von einer Deckelektrode abgedeckt ist, gebildet. Die Deckelektrode überragt die optisch aktive Schicht an einer Seite und die Grundelektrode die optisch aktive Schicht an der gegenüberliegenden Seite des elektronischen Bauelements. Die Bauelemente sind in einem Abstand zueinander auf dem Substrat angeordnet und dadurch ist eine freie Substratfläche zwischen Bauelementen vorhanden, so dass bei einer Faltung im Bereich der freien Substratfläche die Grundelektrode und die Deckelektrode von nebeneinander angeordneten elektronischen Bauelementen flächig aneinander liegen und ein elektrisch leitender berührender Kontakt hergestellt ist.
PCT/DE2008/001175 2007-07-19 2008-07-17 Modul und verfahren zu seiner herstellung Ceased WO2009010052A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/666,949 US8212264B2 (en) 2007-07-19 2008-07-17 FK module and method for the production thereof
JP2010516368A JP5212995B2 (ja) 2007-07-19 2008-07-17 モジュールおよびモジュールの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007034252.9 2007-07-19
DE102007034252A DE102007034252B4 (de) 2007-07-19 2007-07-19 Modul und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
WO2009010052A2 WO2009010052A2 (de) 2009-01-22
WO2009010052A3 true WO2009010052A3 (de) 2009-04-23

Family

ID=40157101

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/001175 Ceased WO2009010052A2 (de) 2007-07-19 2008-07-17 Modul und verfahren zu seiner herstellung

Country Status (4)

Country Link
US (1) US8212264B2 (de)
JP (1) JP5212995B2 (de)
DE (1) DE102007034252B4 (de)
WO (1) WO2009010052A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7816856B2 (en) * 2009-02-25 2010-10-19 Global Oled Technology Llc Flexible oled display with chiplets
DE102010038869A1 (de) 2010-08-04 2012-02-23 Robert Bosch Gmbh Photovoltaikmodul
DE102012109777A1 (de) * 2012-10-15 2014-04-17 Heliatek Gmbh Verfahren zum Bedrucken optoelektronischer Bauelemente mit Stromsammelschienen
US9378450B1 (en) * 2014-12-05 2016-06-28 Vivalnk, Inc Stretchable electronic patch having a circuit layer undulating in the thickness direction
JP5933061B1 (ja) * 2015-03-13 2016-06-08 株式会社東芝 太陽電池モジュール
JP2025112367A (ja) * 2024-01-19 2025-08-01 Tdk株式会社 太陽電池

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4019924A (en) * 1975-11-14 1977-04-26 Mobil Tyco Solar Energy Corporation Solar cell mounting and interconnecting assembly
DE2757301A1 (de) * 1977-12-22 1979-07-05 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur umwandlung von strahlung in elektrische energie und verfahren zur herstellung der vorrichtung
JPS60245158A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd 薄膜太陽電池
JP2004342768A (ja) * 2003-05-14 2004-12-02 Matsushita Electric Ind Co Ltd 薄膜太陽電池モジュール
US20080011350A1 (en) * 1999-03-30 2008-01-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and other optoelectric devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0874404B1 (de) * 1997-04-21 2004-06-30 Canon Kabushiki Kaisha Solarzellenmodul und Verfahren zu dessen Herstellung
JP2001332752A (ja) * 2000-05-19 2001-11-30 Canon Inc 太陽電池モジュール、その搬送方法、その施工方法および太陽光発電装置
JP2002231982A (ja) * 2001-01-30 2002-08-16 Toppan Printing Co Ltd フレキシブル太陽電池モジュールの形成方法
JP4024161B2 (ja) * 2003-02-12 2007-12-19 三洋電機株式会社 太陽電池モジュールの製造方法
US7271534B2 (en) * 2003-11-04 2007-09-18 3M Innovative Properties Company Segmented organic light emitting device
US20050170735A1 (en) * 2004-02-04 2005-08-04 Strip David R. Manufacture of flat panel light emitting devices
EP1820372B1 (de) * 2004-09-24 2016-04-27 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierendes bauelement

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4019924A (en) * 1975-11-14 1977-04-26 Mobil Tyco Solar Energy Corporation Solar cell mounting and interconnecting assembly
DE2757301A1 (de) * 1977-12-22 1979-07-05 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur umwandlung von strahlung in elektrische energie und verfahren zur herstellung der vorrichtung
JPS60245158A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd 薄膜太陽電池
US20080011350A1 (en) * 1999-03-30 2008-01-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and other optoelectric devices
JP2004342768A (ja) * 2003-05-14 2004-12-02 Matsushita Electric Ind Co Ltd 薄膜太陽電池モジュール

Also Published As

Publication number Publication date
JP2010533968A (ja) 2010-10-28
WO2009010052A2 (de) 2009-01-22
US8212264B2 (en) 2012-07-03
JP5212995B2 (ja) 2013-06-19
US20100219420A1 (en) 2010-09-02
DE102007034252B4 (de) 2010-07-01
DE102007034252A1 (de) 2009-01-29

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