WO2009011174A1 - 薄膜太陽電池モジュール - Google Patents

薄膜太陽電池モジュール Download PDF

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Publication number
WO2009011174A1
WO2009011174A1 PCT/JP2008/059934 JP2008059934W WO2009011174A1 WO 2009011174 A1 WO2009011174 A1 WO 2009011174A1 JP 2008059934 W JP2008059934 W JP 2008059934W WO 2009011174 A1 WO2009011174 A1 WO 2009011174A1
Authority
WO
WIPO (PCT)
Prior art keywords
cell module
thin film
film solar
solar cell
contact lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/059934
Other languages
English (en)
French (fr)
Inventor
Yoshiyuki Nasuno
Akira Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to US12/668,514 priority Critical patent/US20100180925A1/en
Priority to EP08776996.4A priority patent/EP2169729A4/en
Priority to CN2008800246273A priority patent/CN101743645B/zh
Publication of WO2009011174A1 publication Critical patent/WO2009011174A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/955—Circuit arrangements for devices having potential barriers for photovoltaic devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

　セルやコンタクトラインの損傷を抑制することができる薄膜太陽電池モジュールを提供するものである。 　本発明の薄膜太陽電池モジュールは、双方向的に互いに並列接続された複数のセルストリングを備えるセルモジュールを備え、前記セルストリングは、コンタクトラインを通じて互いに直列接続された複数のセルを備え、光源：キセノンランプ、放射照度：１００ｍＷ／ｃｍ2、ＡＭ：１．５、温度：２５°Cという条件下における、前記セルモジュールの出力をＰ（Ｗ）、前記セルストリングの出力をＰｓ（Ｗ）、前記コンタクトラインの面積をＳc（ｃｍ2）としたときに、（Ｐ－Ｐｓ）／Ｓｃが１０．７（ｋＷ／ｃｍ2）以下であり、Ｐｓが１２Ｗ以下であり、Ｐが３８５Ｗ以下であることを特徴とする。
PCT/JP2008/059934 2007-07-13 2008-05-29 薄膜太陽電池モジュール Ceased WO2009011174A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/668,514 US20100180925A1 (en) 2007-07-13 2008-05-29 Thin-film solar cell module
EP08776996.4A EP2169729A4 (en) 2007-07-13 2008-05-29 THIN FILM SOLAR CELLS MODULE
CN2008800246273A CN101743645B (zh) 2007-07-13 2008-05-29 薄膜太阳能电池模块

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-184664 2007-07-13
JP2007184664A JP4411338B2 (ja) 2007-07-13 2007-07-13 薄膜太陽電池モジュール

Publications (1)

Publication Number Publication Date
WO2009011174A1 true WO2009011174A1 (ja) 2009-01-22

Family

ID=40259516

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059934 Ceased WO2009011174A1 (ja) 2007-07-13 2008-05-29 薄膜太陽電池モジュール

Country Status (5)

Country Link
US (1) US20100180925A1 (ja)
EP (1) EP2169729A4 (ja)
JP (1) JP4411338B2 (ja)
CN (1) CN101743645B (ja)
WO (1) WO2009011174A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120186642A1 (en) * 2009-09-23 2012-07-26 Ecole Polytechnique Federale De Lausanne (Epfl) Solar cell and its production process
EP2378562A4 (en) * 2009-01-09 2013-08-07 Sharp Kk Thin-film solar cell module
CN105917472A (zh) * 2014-01-13 2016-08-31 光城公司 高效率太阳能面板
WO2016209542A1 (en) 2015-06-26 2016-12-29 Intel Corporation Method and apparatus for reducing read latency for a block erasable non-volatile memory

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102376807B (zh) * 2010-08-13 2013-11-27 无锡尚德太阳能电力有限公司 非晶硅太阳电池组件及其制造方法
CN102479843A (zh) * 2010-11-24 2012-05-30 吉富新能源科技(上海)有限公司 拼装式薄膜太阳能电池组成结构
USD693291S1 (en) * 2010-12-28 2013-11-12 Hon Hai Precision Industry Co., Ltd. Electronic reader
KR101332297B1 (ko) 2011-11-24 2013-11-22 인텔렉추얼디스커버리 주식회사 탄뎀형 집적 광기전력 모듈 및 이의 제조방법
KR20130081484A (ko) * 2012-01-09 2013-07-17 엘지전자 주식회사 박막 태양 전지
US9130102B2 (en) * 2012-05-22 2015-09-08 Intellectual Discovery Co., Ltd. Integrated thin film photovoltaic module and manufacturing method thereof
WO2015045231A1 (ja) * 2013-09-30 2015-04-02 パナソニックＩｐマネジメント株式会社 光電変換装置および当該装置に使用される光電変換ユニット
CN111430481B (zh) * 2020-05-09 2023-10-03 成都中建材光电材料有限公司 碲化镉薄膜太阳能聚光组件及制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753986A (ja) * 1980-07-25 1982-03-31 Eastman Kodak Co
JP2001068713A (ja) 1999-08-25 2001-03-16 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換モジュール
WO2004064167A1 (ja) * 2003-01-10 2004-07-29 Kaneka Corporation 透光性薄膜太陽電池モジュールおよびその製造方法

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JPS60182757A (ja) * 1984-02-29 1985-09-18 Kanegafuchi Chem Ind Co Ltd 集積型太陽電池
JPH01181577A (ja) * 1988-01-12 1989-07-19 Kanegafuchi Chem Ind Co Ltd 光半導体素子
CA2024662A1 (en) * 1989-09-08 1991-03-09 Robert Oswald Monolithic series and parallel connected photovoltaic module
EP2256824A3 (en) * 1999-08-25 2012-09-12 Kaneka Corporation Thin film photoelectric conversion module and method of manufacturing the same
ATE487238T1 (de) * 1999-09-29 2010-11-15 Kaneka Corp Verfahren und gerät zur automatischen lötung von einem anschlussdraht an einer sonnenzellenbatterie
US7098395B2 (en) * 2001-03-29 2006-08-29 Kaneka Corporation Thin-film solar cell module of see-through type
JP4201241B2 (ja) * 2001-05-17 2008-12-24 株式会社カネカ 集積型薄膜光電変換モジュールの作製方法
EP1466368A1 (en) * 2002-01-07 2004-10-13 BP Corporation North America Inc. Method of manufacturing thin film photovoltaic modules
US6784358B2 (en) * 2002-11-08 2004-08-31 The Boeing Co. Solar cell structure utilizing an amorphous silicon discrete by-pass diode
EP1521309A1 (de) * 2003-10-02 2005-04-06 Scheuten Glasgroep Serienverschaltung von Solarzellen mit integrierten Halbleiterkörpern, Verfahren zur Herstellung und Photovoltaikmodul mit Serienverschaltung
JP4194468B2 (ja) * 2003-10-10 2008-12-10 シャープ株式会社 太陽電池およびその製造方法
CN2838046Y (zh) * 2005-04-28 2006-11-15 武汉科技学院 柔性太阳能电池组件

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753986A (ja) * 1980-07-25 1982-03-31 Eastman Kodak Co
JP2001068713A (ja) 1999-08-25 2001-03-16 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換モジュール
WO2004064167A1 (ja) * 2003-01-10 2004-07-29 Kaneka Corporation 透光性薄膜太陽電池モジュールおよびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2169729A4

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2378562A4 (en) * 2009-01-09 2013-08-07 Sharp Kk Thin-film solar cell module
US20120186642A1 (en) * 2009-09-23 2012-07-26 Ecole Polytechnique Federale De Lausanne (Epfl) Solar cell and its production process
CN102668126A (zh) * 2009-09-23 2012-09-12 洛桑联邦理工学院(Epfl) 太阳能电池及其制造方法
CN105917472A (zh) * 2014-01-13 2016-08-31 光城公司 高效率太阳能面板
WO2016209542A1 (en) 2015-06-26 2016-12-29 Intel Corporation Method and apparatus for reducing read latency for a block erasable non-volatile memory

Also Published As

Publication number Publication date
EP2169729A4 (en) 2015-11-18
JP4411338B2 (ja) 2010-02-10
CN101743645A (zh) 2010-06-16
JP2009021513A (ja) 2009-01-29
US20100180925A1 (en) 2010-07-22
CN101743645B (zh) 2012-01-25
EP2169729A1 (en) 2010-03-31

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