WO2009019308A3 - Bauelement mit reduziertem temperaturgang und verfahren zur herstellung - Google Patents

Bauelement mit reduziertem temperaturgang und verfahren zur herstellung Download PDF

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Publication number
WO2009019308A3
WO2009019308A3 PCT/EP2008/060417 EP2008060417W WO2009019308A3 WO 2009019308 A3 WO2009019308 A3 WO 2009019308A3 EP 2008060417 W EP2008060417 W EP 2008060417W WO 2009019308 A3 WO2009019308 A3 WO 2009019308A3
Authority
WO
WIPO (PCT)
Prior art keywords
component
substrate
temperature gradient
production
reduced temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/060417
Other languages
English (en)
French (fr)
Other versions
WO2009019308A2 (de
Inventor
Wolfgang Pahl
Hans Krueger
Werner Ruile
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Priority to JP2010519470A priority Critical patent/JP5416105B2/ja
Publication of WO2009019308A2 publication Critical patent/WO2009019308A2/de
Publication of WO2009019308A3 publication Critical patent/WO2009019308A3/de
Priority to US12/700,446 priority patent/US8098001B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Micromachines (AREA)

Abstract

Es wird ein Bauelement vorgeschlagen, welches verschiedene Maßnahmen zur Absenkung des Temperaturgangs kombiniert. Das Bauelement kann ein piezoelektrisches Substrat aufweisen, und aus der Oberseite des Substrates können sich elektrisch leitende Bauelementstrukturen befinden. Die Unterseite des Substrates ist mit einer Kompensationsschicht mechanisch fest verbunden, so dass eine mechanische Verspannung entsteht. Die Unterseite des Substrates und die Oberseite der Kompensationsschicht weisen eine Topographie auf.
PCT/EP2008/060417 2007-08-08 2008-08-07 Bauelement mit reduziertem temperaturgang und verfahren zur herstellung Ceased WO2009019308A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010519470A JP5416105B2 (ja) 2007-08-08 2008-08-07 温度感受性の低い電気部品およびその製造方法
US12/700,446 US8098001B2 (en) 2007-08-08 2010-02-04 Component with reduced temperature response, and method for production

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007037502.8A DE102007037502B4 (de) 2007-08-08 2007-08-08 Bauelement mit reduziertem Temperaturgang
DE102007037502.8 2007-08-08

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/700,446 Continuation US8098001B2 (en) 2007-08-08 2010-02-04 Component with reduced temperature response, and method for production

Publications (2)

Publication Number Publication Date
WO2009019308A2 WO2009019308A2 (de) 2009-02-12
WO2009019308A3 true WO2009019308A3 (de) 2009-05-28

Family

ID=40260826

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/060417 Ceased WO2009019308A2 (de) 2007-08-08 2008-08-07 Bauelement mit reduziertem temperaturgang und verfahren zur herstellung

Country Status (4)

Country Link
US (1) US8098001B2 (de)
JP (1) JP5416105B2 (de)
DE (1) DE102007037502B4 (de)
WO (1) WO2009019308A2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US7791434B2 (en) * 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
JP2010259000A (ja) * 2009-04-28 2010-11-11 Murata Mfg Co Ltd 弾性表面波素子の製造方法
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
JP2011071838A (ja) * 2009-09-28 2011-04-07 Shin-Etsu Chemical Co Ltd 弾性表面波素子
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
JP5875216B2 (ja) * 2010-05-12 2016-03-02 日本発條株式会社 圧電素子の電気的接続構造の製造方法
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US8350445B1 (en) 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
CN104396142B (zh) 2012-07-12 2018-01-05 日本碍子株式会社 复合基板、压电装置及复合基板的制造方法
KR101443015B1 (ko) 2012-08-17 2014-09-22 엔지케이 인슐레이터 엘티디 복합 기판, 탄성 표면파 디바이스 및 복합 기판의 제조방법
WO2016060072A1 (ja) * 2014-10-17 2016-04-21 株式会社村田製作所 圧電デバイス、圧電デバイスの製造方法
US10432168B2 (en) * 2015-08-31 2019-10-01 General Electric Company Systems and methods for quartz wafer bonding
FR3047355B1 (fr) * 2016-02-01 2019-04-19 Soitec Structure hybride pour dispositif a ondes acoustiques de surface
US10340886B2 (en) * 2016-03-22 2019-07-02 Sumitomo Electric Industries, Ltd. Ceramic substrate, layered body, and saw device
US11183987B2 (en) * 2019-09-26 2021-11-23 Avago Technologies International Sales Pte. Limited Acoustic resonator device
CN113098431B (zh) * 2020-01-08 2023-09-08 中芯集成电路（宁波）有限公司 用于制作声波谐振器复合基板及表声波谐振器及制造方法
CN119341517A (zh) * 2024-12-20 2025-01-21 天通瑞宏科技有限公司 一种声表面滤波器及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03271443A (ja) * 1990-03-19 1991-12-03 Kiyoo Kobayashi 断熱材

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898585A (en) * 1974-01-14 1975-08-05 Ibm Leaky corrugated optical waveguide device
JPH02106983A (ja) * 1988-10-17 1990-04-19 Murata Mfg Co Ltd 圧電機能部品
JP3039971B2 (ja) * 1989-09-19 2000-05-08 株式会社日立製作所 接合型圧電装置及び製造方法並びに接合型圧電素子
JP3327563B2 (ja) * 1991-09-03 2002-09-24 キヤノン株式会社 常温接着方法
JPH06241811A (ja) * 1993-02-17 1994-09-02 Akai Electric Co Ltd 振動ジャイロ用振動子
JP2940779B2 (ja) * 1993-11-24 1999-08-25 三洋電機株式会社 単結晶の製造方法
JP3358694B2 (ja) * 1995-10-16 2002-12-24 電気化学工業株式会社 金属ベース多層回路基板
US5755909A (en) * 1996-06-26 1998-05-26 Spectra, Inc. Electroding of ceramic piezoelectric transducers
US6249074B1 (en) * 1997-08-22 2001-06-19 Cts Corporation Piezoelectric resonator using sacrificial layer and method of tuning same
JPH11234077A (ja) * 1998-02-16 1999-08-27 Murata Mfg Co Ltd 表面実装型圧電部品
JPH11274372A (ja) * 1998-03-19 1999-10-08 Toshiba Corp 半導体装置及びその半導体パッケージ
JP2000201050A (ja) * 1998-11-02 2000-07-18 Ngk Insulators Ltd 表面弾性波装置用基板およびその製造方法
WO2000030554A1 (en) * 1998-11-20 2000-06-02 Jones Joie P Methods for selectively dissolving and removing materials using ultra-high frequency ultrasound
JP2001053579A (ja) * 1999-06-02 2001-02-23 Matsushita Electric Ind Co Ltd 弾性表面波素子と移動体通信機器
CA2327734A1 (en) * 1999-12-21 2001-06-21 Eta Sa Fabriques D'ebauches Ultra-thin piezoelectric resonator
JP2001332041A (ja) * 2000-05-18 2001-11-30 Matsushita Electric Ind Co Ltd ディスク装置用薄膜圧電体アクチュエーターおよびその製造方法
JP3538710B2 (ja) * 2000-06-27 2004-06-14 株式会社村田製作所 圧電フィルタ及びその製造方法
US6563133B1 (en) 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
JP2002245853A (ja) * 2001-02-16 2002-08-30 Nippon Paint Co Ltd 異方性導電接着剤および導電接続構造体
JP2002330047A (ja) * 2001-04-27 2002-11-15 Kyocera Corp 弾性表面波素子
JP2003110392A (ja) * 2001-10-02 2003-04-11 Matsushita Electric Ind Co Ltd 電子部品の製造方法
JP3945363B2 (ja) 2001-10-12 2007-07-18 株式会社村田製作所 弾性表面波装置
JP2003124767A (ja) * 2001-10-16 2003-04-25 Hitachi Ltd 弾性表面波素子とその製造方法
JP3892370B2 (ja) * 2002-09-04 2007-03-14 富士通メディアデバイス株式会社 弾性表面波素子、フィルタ装置及びその製造方法
ATE440319T1 (de) * 2002-12-12 2009-09-15 Danfoss As Berührungssensorelement und sensorgruppe
JP4451104B2 (ja) * 2003-09-16 2010-04-14 学校法人桐蔭学園 Ｐｚｔ圧電結晶膜の製法及び超音波トランスデューサ
DE102004045018B4 (de) 2003-09-30 2019-08-01 Mahle International Gmbh Verfahren zur Herstellung eines flachen Rohres für einen Wärmetauscher eines Kraftfahrzeugs, flaches Rohr, Verfahren zur Herstellung eines Wärmetauschers und Wärmetauscher
JP2005229455A (ja) * 2004-02-16 2005-08-25 Shin Etsu Chem Co Ltd 複合圧電基板
JP2005303980A (ja) 2004-03-15 2005-10-27 Matsushita Electric Ind Co Ltd 弾性表面波デバイスおよびその形成方法
JP4587732B2 (ja) * 2004-07-28 2010-11-24 京セラ株式会社 弾性表面波装置
JP2006059905A (ja) * 2004-08-18 2006-03-02 Toshiba Corp 半導体装置の製造方法
US7307369B2 (en) * 2004-08-26 2007-12-11 Kyocera Corporation Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment
DE102004045181B4 (de) 2004-09-17 2016-02-04 Epcos Ag SAW-Bauelement mit reduziertem Temperaturgang und Verfahren zur Herstellung
JP2006129209A (ja) * 2004-10-29 2006-05-18 Murata Mfg Co Ltd 圧電振動部品
JP2006210621A (ja) * 2005-01-27 2006-08-10 Sumitomo Bakelite Co Ltd 半導体製品搭載回路基板、チップ部品搭載回路基板及びＳｉＰ
WO2006088127A1 (ja) * 2005-02-18 2006-08-24 Toyo Ink Manufacturing Co., Ltd. 電磁波シールド性接着フィルム及びその製造方法、並びに被着体の電磁波遮蔽方法
US20070182290A1 (en) * 2005-07-22 2007-08-09 University Of Southern California Fabrication of Broadband Graded Transducer Using Piezoelectric Partial Composites
US20070140875A1 (en) * 2005-12-16 2007-06-21 Green James S Piezoelectric pump
US7569976B2 (en) * 2006-07-27 2009-08-04 Koike Co., Ltd. Piezo-electric substrate and manufacturing method of the same
US7880371B2 (en) * 2006-11-03 2011-02-01 Danfoss A/S Dielectric composite and a method of manufacturing a dielectric composite

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03271443A (ja) * 1990-03-19 1991-12-03 Kiyoo Kobayashi 断熱材

Also Published As

Publication number Publication date
US20100187949A1 (en) 2010-07-29
WO2009019308A2 (de) 2009-02-12
US8098001B2 (en) 2012-01-17
DE102007037502A1 (de) 2009-02-19
JP5416105B2 (ja) 2014-02-12
JP2010536217A (ja) 2010-11-25
DE102007037502B4 (de) 2014-04-03

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