WO2009019864A1 - 半導体装置とその製造方法および画像表示装置 - Google Patents

半導体装置とその製造方法および画像表示装置 Download PDF

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Publication number
WO2009019864A1
WO2009019864A1 PCT/JP2008/002123 JP2008002123W WO2009019864A1 WO 2009019864 A1 WO2009019864 A1 WO 2009019864A1 JP 2008002123 W JP2008002123 W JP 2008002123W WO 2009019864 A1 WO2009019864 A1 WO 2009019864A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
hole
image display
manufacturing
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/002123
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English (en)
French (fr)
Inventor
Seiichi Nakatani
Yoshihisa Yamashita
Takashi Kitae
Susumu Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
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Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to CN2008801018166A priority Critical patent/CN101772842B/zh
Priority to US12/672,135 priority patent/US8193526B2/en
Priority to JP2009526335A priority patent/JP4733767B2/ja
Priority to EP08790387A priority patent/EP2178126A4/en
Publication of WO2009019864A1 publication Critical patent/WO2009019864A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)

Abstract

　より高密度に半導体素子を形成できる半導体装置およびその製造方法を提供する。併せてこの半導体装置を用いた画像表示装置の提供もする。 　一方の面から他方の面に貫通するスルーホールを有する樹脂フィルムと、前記スルーホールの内壁に沿って設けられたソース電極と、前記スルーホールの内壁に沿って設けられたドレイン電極と、前記スルーホールに対向して前記樹脂フィルムの他方の面に設けられたゲート電極と、前記ゲート電極上に設けられ、前記スルーホール内の底部に位置する絶縁層と、前記ソース電極と前記ドレイン電極とに接触するように前記スルーホールの内部に配置された有機半導体と、を備え、前記有機半導体は、前記スルーホール内の底部において前記絶縁層の少なくとも一部と接触し、その接触した絶縁層の近傍の有機半導体にチャンネルが形成されることを特徴とする半導体装置である。
PCT/JP2008/002123 2007-08-07 2008-08-06 半導体装置とその製造方法および画像表示装置 Ceased WO2009019864A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2008801018166A CN101772842B (zh) 2007-08-07 2008-08-06 半导体装置及其制造方法以及图像显示装置
US12/672,135 US8193526B2 (en) 2007-08-07 2008-08-06 Transistor having an organic semiconductor with a hollow space
JP2009526335A JP4733767B2 (ja) 2007-08-07 2008-08-06 半導体装置とその製造方法および画像表示装置
EP08790387A EP2178126A4 (en) 2007-08-07 2008-08-06 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGE DISPLAY DEVICE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-205202 2007-08-07
JP2007205202 2007-08-07

Publications (1)

Publication Number Publication Date
WO2009019864A1 true WO2009019864A1 (ja) 2009-02-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002123 Ceased WO2009019864A1 (ja) 2007-08-07 2008-08-06 半導体装置とその製造方法および画像表示装置

Country Status (7)

Country Link
US (1) US8193526B2 (ja)
EP (1) EP2178126A4 (ja)
JP (1) JP4733767B2 (ja)
KR (1) KR20100047851A (ja)
CN (1) CN101772842B (ja)
TW (1) TW200913336A (ja)
WO (1) WO2009019864A1 (ja)

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JP2009111001A (ja) * 2007-10-26 2009-05-21 Konica Minolta Holdings Inc 薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置
WO2010113376A1 (ja) * 2009-03-31 2010-10-07 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
WO2010134234A1 (ja) * 2009-05-19 2010-11-25 パナソニック株式会社 フレキシブル半導体装置の製造方法
JP2015052742A (ja) * 2013-09-09 2015-03-19 パナソニックＩｐマネジメント株式会社 画像表示装置およびその製造方法
JP2021073664A (ja) * 2014-02-28 2021-05-13 株式会社半導体エネルギー研究所 電子機器

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CN102812541B (zh) * 2011-03-24 2016-02-03 松下知识产权经营株式会社 挠性半导体装置及其制造方法、以及使用挠性半导体装置的图像显示装置及其制造方法
KR101829312B1 (ko) * 2011-08-26 2018-02-20 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
US20140015405A1 (en) * 2012-07-12 2014-01-16 Elementech International Co., Ltd. Light emitting diode module
JP6116882B2 (ja) * 2012-12-10 2017-04-19 株式会社ジャパンディスプレイ 液晶表示装置及びその製造方法
CN103730384A (zh) * 2013-12-13 2014-04-16 深圳市华星光电技术有限公司 一种tft电性量测方法及装置
CN105355604B (zh) * 2015-10-12 2018-04-20 深超光电（深圳）有限公司 薄膜晶体管阵列基板
KR102177894B1 (ko) * 2017-04-04 2020-11-12 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법
WO2019186809A1 (ja) 2018-03-28 2019-10-03 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
US11152442B2 (en) * 2018-03-28 2021-10-19 Sakai Display Products Corporation Organic electroluminescent (EL) display device with comb-shaped source and drain electrodes and manufacturing method therefor

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009111001A (ja) * 2007-10-26 2009-05-21 Konica Minolta Holdings Inc 薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置
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WO2010113376A1 (ja) * 2009-03-31 2010-10-07 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
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WO2010134234A1 (ja) * 2009-05-19 2010-11-25 パナソニック株式会社 フレキシブル半導体装置の製造方法
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JP2015052742A (ja) * 2013-09-09 2015-03-19 パナソニックＩｐマネジメント株式会社 画像表示装置およびその製造方法
JP2021073664A (ja) * 2014-02-28 2021-05-13 株式会社半導体エネルギー研究所 電子機器
JP7157186B2 (ja) 2014-02-28 2022-10-19 株式会社半導体エネルギー研究所 電子機器

Also Published As

Publication number Publication date
JP4733767B2 (ja) 2011-07-27
CN101772842A (zh) 2010-07-07
EP2178126A4 (en) 2011-09-14
KR20100047851A (ko) 2010-05-10
EP2178126A1 (en) 2010-04-21
US20110204367A1 (en) 2011-08-25
JPWO2009019864A1 (ja) 2010-10-28
TW200913336A (en) 2009-03-16
US8193526B2 (en) 2012-06-05
CN101772842B (zh) 2011-08-17

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