WO2009031301A1 - 固体撮像素子 - Google Patents

固体撮像素子 Download PDF

Info

Publication number
WO2009031301A1
WO2009031301A1 PCT/JP2008/002425 JP2008002425W WO2009031301A1 WO 2009031301 A1 WO2009031301 A1 WO 2009031301A1 JP 2008002425 W JP2008002425 W JP 2008002425W WO 2009031301 A1 WO2009031301 A1 WO 2009031301A1
Authority
WO
WIPO (PCT)
Prior art keywords
pixel
storage units
region
pixels
continuous imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/002425
Other languages
English (en)
French (fr)
Inventor
Shigetoshi Sugawa
Yasushi Kondo
Hideki Tominaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Shimadzu Corp
Original Assignee
Tohoku University NUC
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, Shimadzu Corp filed Critical Tohoku University NUC
Priority to JP2009531123A priority Critical patent/JP4931160B2/ja
Priority to KR1020107003063A priority patent/KR101126322B1/ko
Priority to EP08829399.8A priority patent/EP2190185B1/en
Priority to US12/676,562 priority patent/US8988571B2/en
Priority to CN200880105558A priority patent/CN101796822A/zh
Publication of WO2009031301A1 publication Critical patent/WO2009031301A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

　フォトダイオードを含む画素（１０）を二次元アレイ状に配列した画素領域（２ａ）と、各画素で生成された信号を連続撮影のフレーム数分だけ保持する記憶部を配置した記憶領域（３ａ）とを半導体基板上で分離して設ける。全画素は同時に光電荷蓄積を実行し、光電荷の蓄積により生成した信号をそれぞれ独立した画素出力線（１４）を通して並行して出力する。そして、１本の画素出力線に接続された複数の記憶部において、１回の露光毎に異なる記憶部のサンプリングトランジスタを順にオンさせることで各記憶部のキャパシタに信号を順番に保持し、連続撮影終了後に全ての画素信号を逐次読み出す。ＣＣＤのように全ゲート負荷が一斉に駆動されないので消費電力を抑え、高速駆動が可能となる。また、記憶領域が画素領域と分離されているので、過剰な光電荷の流れ込みによる信号の劣化も防止できる。これにより、従来よりも高速の連続撮影を可能としつつ、撮影画像の画質を向上させることができる。
PCT/JP2008/002425 2007-09-05 2008-09-04 固体撮像素子 Ceased WO2009031301A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009531123A JP4931160B2 (ja) 2007-09-05 2008-09-04 固体撮像素子
KR1020107003063A KR101126322B1 (ko) 2007-09-05 2008-09-04 고체촬상소자
EP08829399.8A EP2190185B1 (en) 2007-09-05 2008-09-04 Solid-state image sensor
US12/676,562 US8988571B2 (en) 2007-09-05 2008-09-04 Solid-state image sensor
CN200880105558A CN101796822A (zh) 2007-09-05 2008-09-04 固体摄像元件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007230178 2007-09-05
JP2007-230178 2007-09-05

Publications (1)

Publication Number Publication Date
WO2009031301A1 true WO2009031301A1 (ja) 2009-03-12

Family

ID=40428625

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002425 Ceased WO2009031301A1 (ja) 2007-09-05 2008-09-04 固体撮像素子

Country Status (7)

Country Link
US (1) US8988571B2 (ja)
EP (1) EP2190185B1 (ja)
JP (1) JP4931160B2 (ja)
KR (1) KR101126322B1 (ja)
CN (1) CN101796822A (ja)
TW (1) TW200922308A (ja)
WO (1) WO2009031301A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011004708A1 (ja) 2009-07-10 2011-01-13 株式会社島津製作所 固体撮像素子
JP2011233949A (ja) * 2010-04-23 2011-11-17 Olympus Corp 撮像装置
JP2013015357A (ja) * 2011-07-01 2013-01-24 Shimadzu Corp フローサイトメータ
US8541731B2 (en) 2008-06-10 2013-09-24 Shimadzu Corporation Solid-state image sensor
US9030582B2 (en) 2011-02-08 2015-05-12 Shimadzu Corporation Solid state image sensor and method for driving the same
WO2017006411A1 (ja) * 2015-07-06 2017-01-12 株式会社島津製作所 固体撮像素子の信号処理方法及び駆動方法
JP2017220749A (ja) * 2016-06-06 2017-12-14 キヤノン株式会社 撮像装置、撮像システム
JP2021022948A (ja) * 2020-11-04 2021-02-18 キヤノン株式会社 撮像装置、撮像システム
JP2021150846A (ja) * 2020-03-19 2021-09-27 株式会社東芝 固体撮像装置
JP2024041924A (ja) * 2021-03-31 2024-03-27 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2192615A4 (en) * 2007-09-05 2011-07-27 Univ Tohoku SOLID-BODY IMAGING ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
JP5709404B2 (ja) * 2010-05-10 2015-04-30 キヤノン株式会社 固体撮像装置およびその駆動方法
JP4657379B1 (ja) * 2010-09-01 2011-03-23 株式会社ナックイメージテクノロジー 高速度ビデオカメラ
KR101251744B1 (ko) * 2011-04-13 2013-04-05 엘지이노텍 주식회사 Ｗｄｒ 픽셀 어레이, 이를 포함하는 ｗｄｒ 이미징 장치 및 그 구동방법
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP5959187B2 (ja) * 2011-12-02 2016-08-02 オリンパス株式会社 固体撮像装置、撮像装置、および信号読み出し方法
US9007504B2 (en) * 2012-04-06 2015-04-14 Omnivision Technologies, Inc. Method, apparatus and system for reducing pixel cell noise
JP6042636B2 (ja) * 2012-05-28 2016-12-14 オリンパス株式会社 固体撮像素子および固体撮像装置
EP2890117B1 (en) 2013-12-26 2020-11-18 IMEC vzw Improvements in or relating to imaging sensors
TWI648986B (zh) * 2014-04-15 2019-01-21 Sony Corporation 攝像元件、電子機器
US10070088B2 (en) * 2015-01-05 2018-09-04 Canon Kabushiki Kaisha Image sensor and image capturing apparatus for simultaneously performing focus detection and image generation
JP6218799B2 (ja) 2015-01-05 2017-10-25 キヤノン株式会社 撮像素子及び撮像装置
GB2544333B (en) * 2015-11-13 2018-02-21 Advanced Risc Mach Ltd Display controller
JP6842240B2 (ja) 2016-03-07 2021-03-17 株式会社リコー 画素ユニット、及び撮像素子
CN113225498A (zh) * 2016-03-24 2021-08-06 株式会社尼康 摄像元件和摄像装置
DE102016212765A1 (de) * 2016-07-13 2018-01-18 Robert Bosch Gmbh Pixeleinheit für einen Bildsensor, Bildsensor, Verfahren zum Sensieren eines Lichtsignals, Verfahren zum Ansteuern einer Pixeleinheit und Verfahren zum Generieren eines Bildes unter Verwendung einer Pixeleinheit
TWI754696B (zh) * 2016-12-14 2022-02-11 日商索尼半導體解決方案公司 固體攝像元件及電子機器
KR102427832B1 (ko) 2017-04-12 2022-08-02 삼성전자주식회사 이미지 센서
CN111684600B (zh) 2018-02-05 2023-09-22 Pmd技术股份公司 用于照相机的像素阵列、照相机以及具有这种照相机的光传播时间照相机系统
JP7472902B2 (ja) * 2019-03-29 2024-04-23 Ｔｏｐｐａｎホールディングス株式会社 固体撮像装置、撮像システム及び撮像方法
DE102019113597B3 (de) 2019-05-22 2020-08-06 pmdtechnologies ag Pixelarray für eine Kamera, Kamera und Lichtlaufzeitkamerasystem mit einer derartigen Kamera
KR102885925B1 (ko) * 2019-11-15 2025-11-12 삼성전자주식회사 픽셀 어레이 및 이를 포함하는 이미지 센서
KR20240142806A (ko) * 2023-03-22 2024-10-02 에스케이하이닉스 주식회사 이미지 센서 및 그의 동작방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63174356A (ja) * 1987-01-14 1988-07-18 Agency Of Ind Science & Technol 画像処理用半導体装置
JP2001345441A (ja) 2000-03-28 2001-12-14 Hideki Muto 高速撮像素子及び高速撮影装置
JP2002512461A (ja) 1998-04-16 2002-04-23 インテル・コーポレーション 複数の記憶コンデンサを有するアクティブ画素ｃｍｏｓセンサ
JP2006245522A (ja) 2005-02-04 2006-09-14 Tohoku Univ 光センサ、固体撮像装置、および固体撮像装置の動作方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3351503B2 (ja) * 1996-10-09 2002-11-25 シャープ株式会社 固体撮像装置
US6787749B1 (en) * 1996-11-12 2004-09-07 California Institute Of Technology Integrated sensor with frame memory and programmable resolution for light adaptive imaging
US5872484A (en) * 1997-07-11 1999-02-16 Texas Instruments Incorporated High performance current output amplifier for CCD image sensors
US7139025B1 (en) * 1998-10-29 2006-11-21 Micron Technology, Inc. Active pixel sensor with mixed analog and digital signal integration
US6429036B1 (en) * 1999-01-14 2002-08-06 Micron Technology, Inc. Backside illumination of CMOS image sensor
US6307243B1 (en) * 1999-07-19 2001-10-23 Micron Technology, Inc. Microlens array with improved fill factor
US6985181B2 (en) * 2000-05-09 2006-01-10 Pixim, Inc. CMOS sensor array with a memory interface
US7027092B2 (en) * 2001-09-17 2006-04-11 Hewlett-Packard Development Company, L.P. Image capture and storage device
JP4466612B2 (ja) 2001-09-20 2010-05-26 ソニー株式会社 固体撮像装置及びその制御方法
JP3846572B2 (ja) * 2001-09-20 2006-11-15 ソニー株式会社 固体撮像装置
US7071982B2 (en) * 2001-10-24 2006-07-04 Texas Instruments Incorporated Adaptive relative and absolute address coding CMOS imager technique and system architecture
US20030206236A1 (en) * 2002-05-06 2003-11-06 Agfa Corporation CMOS digital image sensor system and method
JP4601897B2 (ja) * 2002-11-13 2010-12-22 ソニー株式会社 固体撮像装置及びその駆動方法
US20040125093A1 (en) * 2002-12-30 2004-07-01 Serge Rutman Micro-controller with integrated light modulator
JP2005303621A (ja) * 2004-04-09 2005-10-27 Link Research Kk 高速撮像装置
JP2006101479A (ja) 2004-09-02 2006-04-13 Canon Inc 固体撮像装置及びそれを用いたカメラ
US7817193B2 (en) 2004-11-25 2010-10-19 Sony Corporation Image pickup apparatus and image pickup method to display or record images picked up at high rate in real time
JP4561439B2 (ja) * 2005-03-30 2010-10-13 株式会社デンソー 撮像装置
KR100682829B1 (ko) 2005-05-18 2007-02-15 삼성전자주식회사 씨모스 이미지 센서의 단위 픽셀, 픽셀 어레이 및 이를포함한 씨모스 이미지 센서
JP2007166581A (ja) 2005-11-16 2007-06-28 Matsushita Electric Ind Co Ltd 高速撮影用固体撮像装置
JP4745876B2 (ja) * 2006-03-29 2011-08-10 キヤノン株式会社 画像処理装置及び画像処理方法
JP4293210B2 (ja) * 2006-08-18 2009-07-08 ソニー株式会社 物理量検出装置、物理量検出装置の駆動方法、固体撮像装置、固体撮像装置の駆動方法、及び撮像装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63174356A (ja) * 1987-01-14 1988-07-18 Agency Of Ind Science & Technol 画像処理用半導体装置
JP2002512461A (ja) 1998-04-16 2002-04-23 インテル・コーポレーション 複数の記憶コンデンサを有するアクティブ画素ｃｍｏｓセンサ
JP2001345441A (ja) 2000-03-28 2001-12-14 Hideki Muto 高速撮像素子及び高速撮影装置
JP2006245522A (ja) 2005-02-04 2006-09-14 Tohoku Univ 光センサ、固体撮像装置、および固体撮像装置の動作方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KONDO ET AL.: "Kousokudo Bideo Kamera HyperVision HPV-1 no Kaihatsu", SHIMADZU HYOURON, vol. 62, no. 1/2, 30 September 2005 (2005-09-30), pages 79 - 86
See also references of EP2190185A4

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8541731B2 (en) 2008-06-10 2013-09-24 Shimadzu Corporation Solid-state image sensor
WO2011004708A1 (ja) 2009-07-10 2011-01-13 株式会社島津製作所 固体撮像素子
US8530947B2 (en) 2009-07-10 2013-09-10 Shimadzu Corporation Solid-state image sensor
JP2011233949A (ja) * 2010-04-23 2011-11-17 Olympus Corp 撮像装置
US9030582B2 (en) 2011-02-08 2015-05-12 Shimadzu Corporation Solid state image sensor and method for driving the same
JP2013015357A (ja) * 2011-07-01 2013-01-24 Shimadzu Corp フローサイトメータ
WO2017006411A1 (ja) * 2015-07-06 2017-01-12 株式会社島津製作所 固体撮像素子の信号処理方法及び駆動方法
JPWO2017006411A1 (ja) * 2015-07-06 2017-10-26 株式会社島津製作所 固体撮像素子の信号処理方法及び駆動方法
JP2017220749A (ja) * 2016-06-06 2017-12-14 キヤノン株式会社 撮像装置、撮像システム
JP2021150846A (ja) * 2020-03-19 2021-09-27 株式会社東芝 固体撮像装置
JP7330124B2 (ja) 2020-03-19 2023-08-21 株式会社東芝 固体撮像装置
JP2021022948A (ja) * 2020-11-04 2021-02-18 キヤノン株式会社 撮像装置、撮像システム
JP7030929B2 (ja) 2020-11-04 2022-03-07 キヤノン株式会社 撮像装置、撮像システム
JP2024041924A (ja) * 2021-03-31 2024-03-27 ソニーセミコンダクタソリューションズ株式会社 光検出装置
US12262565B2 (en) 2021-03-31 2025-03-25 Sony Semiconductor Solutions Corporation Light detecting device and electronic device

Also Published As

Publication number Publication date
TW200922308A (en) 2009-05-16
US8988571B2 (en) 2015-03-24
KR101126322B1 (ko) 2012-07-12
JP4931160B2 (ja) 2012-05-16
EP2190185B1 (en) 2013-11-06
US20100208115A1 (en) 2010-08-19
EP2190185A4 (en) 2010-08-18
EP2190185A1 (en) 2010-05-26
KR20100038446A (ko) 2010-04-14
JPWO2009031301A1 (ja) 2010-12-09
CN101796822A (zh) 2010-08-04

Similar Documents

Publication Publication Date Title
WO2009031301A1 (ja) 固体撮像素子
WO2009031302A1 (ja) 固体撮像素子及びその駆動方法
CN103312998B (zh) 固态成像装置、驱动方法、和电子设备
US7982789B2 (en) Image sensing apparatus driving method, image sensing apparatus, and image sensing system
KR101195327B1 (ko) 데이터 처리 방법, 데이터 처리 장치, 물리량 분포 검지용 반도체 장치 및 전자 장치
US9749557B2 (en) Solid-state image pickup device in which charges overflowing a memory during a charge transfer period are directed to a floating diffusion and method of driving same
JP5821315B2 (ja) 電子機器、電子機器の駆動方法
EP2180514A3 (en) Solid state image sensor, method for driving a solid state image sensor, imaging apparatus, and electronic device
EP2214407A3 (en) Solid-state image capturing apparatus, driving method thereof and electronic apparatus
JP2017220877A (ja) 撮像装置及び撮像システム
US20170163920A1 (en) Image sensor supporting various operating modes and operating method thereof
TW202023044A (zh) 固體攝像元件及其驅動方法、以及電子機器
TW200618265A (en) Semiconductor module, MOS type solid-state image pickup device, camera and manufacturing method of camera
US9807327B2 (en) Solid-state image device, method of driving solid-state imaging device, and electronic system with AD converter and bias current control
EP1599032A3 (en) Solid-state image pickup device and camera
CN103685999A (zh) 固态图像传感器、用于固态图像传感器的控制方法以及电子装置
EP1339010A3 (en) Image input apparatus
KR20150123148A (ko) 고체 촬상 장치
US10171784B2 (en) Solid state imaging device and imaging apparatus having a plurality of addition read modes
US7352028B2 (en) Solid-state imaging devices
US8179463B1 (en) Image sensor with shared node
JP2013162148A (ja) 個体撮像装置および駆動方法、並びに電子機器
KR20160015712A (ko) 이미지 촬상 장치 및 방법
US20160269658A1 (en) Image Sensors and Image Processing Systems Including the Image Sensors
JP2006129298A5 (ja)

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880105558.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08829399

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009531123

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20107003063

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12676562

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008829399

Country of ref document: EP