WO2009032052A2 - Cellule solaire hybride à haut rendement - Google Patents

Cellule solaire hybride à haut rendement Download PDF

Info

Publication number
WO2009032052A2
WO2009032052A2 PCT/US2008/009732 US2008009732W WO2009032052A2 WO 2009032052 A2 WO2009032052 A2 WO 2009032052A2 US 2008009732 W US2008009732 W US 2008009732W WO 2009032052 A2 WO2009032052 A2 WO 2009032052A2
Authority
WO
WIPO (PCT)
Prior art keywords
cell
energy
light
photons
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2008/009732
Other languages
English (en)
Other versions
WO2009032052A3 (fr
Inventor
Allen M. Barnett
Christiana Beatrice Honsberg
Stuart Graham Bowden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Delaware
Original Assignee
University of Delaware
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Delaware filed Critical University of Delaware
Priority to JP2010522901A priority Critical patent/JP2010538455A/ja
Priority to EP08795328A priority patent/EP2183790A2/fr
Priority to CN200880105013.8A priority patent/CN101919065A/zh
Publication of WO2009032052A2 publication Critical patent/WO2009032052A2/fr
Priority to US12/568,213 priority patent/US20100078063A1/en
Publication of WO2009032052A3 publication Critical patent/WO2009032052A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the invention claimed herein was made pursuant to the Articles of Collaboration for the 50% Efficient Solar Cells Consortium formed pursuant to the Defense Advanced Research Projects Agency (DARPA) award to the University of Delaware October 1 , 2005, W911 NF-05-9-0005.
  • DRPA Defense Advanced Research Projects Agency
  • This invention relates to a high efficiency hybrid solar cell suitable for use in both mobile and stationary applications.
  • High performance photovoltaic systems are required for both economic and technical reasons. The cost of electricity can be halved by doubling the efficiency of the solar cell. Many applications do not have the area required to provide the needed power using current solar cells.
  • Two types of solar cell architecture have been proposed for more efficient solar cells.
  • One is a lateral architecture. An optical dispersion element is used to split the solar spectrum into its wavelength components. Separate solar cells are placed under each wavelength band and the cells are chosen so that they provide good efficiency for light of that wavelength band.
  • Another architecture is a vertical one in which individual solar cells with different energy gaps are arranged in a stack. These are commonly referred to as cascade, tandem or multiple junction cells. The solar light is passed through the stack.
  • This invention provides a high efficiency hybrid solar cell comprising:
  • a dichroic mirror operating at E 9 and positioned so that solar light impinges upon the dichroic mirror, wherein the dichroic mirror provides a separation of the solar light into two spectral components, one component of light with photons of energy > E 9 and one component of light with photons of energy ⁇ E 9 , wherein one of these components is reflected by the dichroic mirror and one is transmitted by the dichroic mirror;
  • a first cell stack comprising two cells, the first cell being a GaInP cell and the second cell being a GaAs cell, arranged vertically in descending order of their energy gaps with the first cell having the larger energy gap of the cells in the first cell stack, the first cell stack being positioned so that the component of light with photons of energy > E 9 impinges upon the surface of the first cell in the first cell stack, wherein the cells in the first cell stack each absorb light with photons of energy greater than or equal to their energy gap and are transparent to and transmit light with photons of energy less than their energy gap, wherein E 9 is equal to about the energy gap of the GaAs cell; and
  • a second cell stack comprising three cells, the first cell being a silicon cell, the second cell being a GaInAsP cell and the third cell being a GaInAs cell, arranged vertically in descending order of their energy gaps with the first cell having the largest energy gap of the cells in the second cell stack, the second cell stack being positioned so that the component of light with photons of energy ⁇ E 9 impinges upon the surface of the first cell in the second cell stack, wherein the energy gap of each cell in the second cell stack is ⁇ E 9 and wherein cells in the second cell stack each absorb light with photons of energy greater than or equal to their energy gap and are transparent to and transmit light with photons of energy less than their energy gap.
  • the dichroic mirror is a "cold" dichroic mirror.
  • Figure 1 shows a schematic drawing of a cell stack.
  • Figures 2A and 2B show the design of the demonstrated hybrid solar cell.
  • Figure 3 illustrates an embodiment of the hybrid solar cell with the with a dichroic mirror that reflects light with photons of energy > E 9 and transmits light with photons of energy ⁇ E 9 and with the planes of the two cell stacks orthogonal.
  • Figure 4 illustrates another embodiment of the hybrid solar cell with a dichroic mirror that reflects light with photons of energy > E 9 and transmits light with photons of energy ⁇ E 9 and with the two cell stacks in a coplanar configuration.
  • the instant invention provides a high efficiency hybrid solar cell with efficiency in excess of 30% and, preferably, up to and surpassing 40%.
  • the hybrid solar cell is comprised of a dichroic mirror, a first cell stack comprising a GaInP cell and a GaAs cell and a second cell stack comprising a Si cell, a GaInAsP cell and a GaInAs cell.
  • the dichroic mirror operating at E 9 is positioned so that the solar light impinges upon the dichroic mirror.
  • the so-called "cold" dichroic mirror reflects light with photons of energy > E 9 and transmits light with photons of energy ⁇ E 9 .
  • the so-called “hot” dichroic mirror transmits light with photons of energy > E 9 and reflects light with photons of energy ⁇ E 9 .
  • the "cold” dichroic mirror is preferred.
  • the dichroic mirror can be planar or curved.
  • Cell is used herein to describe the individual cells that are contained in the various stacks and that are generally referred to as solar cells.
  • solar cell is used herein to describe the complete device.
  • arranged vertically in descending order of their energy gaps with the first cell having the largest energy gap of the cells in the stack means that the cells in the stack are arranged sequentially with the first cell having the largest energy gap, the second cell directly below the first cell having the next largest energy gap, the third cell directly below the second cell having the third largest energy gap, etc.
  • This arrangement of a cell stack is shown schematically in Figure 1.
  • the cell stack 10 has three cells, 1 , 2 and 3, with cell 1 being the first cell.
  • the energy gaps of the three cells are such that E 9 1 > E 9 2 > E 9 3 where E 9 1 is the energy gap of cell 1 , E 9 2 is the energy gap of cell 2 and E 9 3 is the energy gap of cell 3.
  • Cell 1 will absorb the light with photons of energy > E 9 1 and transmit the light with photons of energy ⁇ E 9 1 .
  • Cell 2 will absorb the light with photons of energy > E 9 2 and transmit the light with photons of energy ⁇ E 9 2 .
  • the cells can be thought of as being in series optically. The cells convert the energy of the absorbed photons into electricity.
  • “Absorbed” as used herein means that a photon absorbed by the cell results in the creation of an electron-hole pair.
  • the dichroic mirror operating at E 9 is used herein to mean that the dichroic mirror provides a separation of the solar light into two spectral components, one component of light with photons of energy > E 9 and one component of light with photons of energy ⁇ E 9 . One of these components is reflected by the dichroic mirror and one is transmitted by the dichroic mirror.
  • a "cold” dichroic mirror reflects light with photons of energy > E 9 and transmits light with photons of energy ⁇ E 9 and a "hot” dichroic mirror transmits light with photons of energy > E 9 and reflects light with photons of energy ⁇ E 9 .
  • the dichroic mirror will be positioned so that it is not perpendicular to the solar light. In this way the direction of the reflected light is not directly back toward the incoming solar light but is rather at an angle with respect to the direction of the solar light impinging on the dichroic mirror and the reflected light can more readily be arranged to impinge upon the appropriate cell stack. The transition from transmission to reflection occurs over a range of energies and corresponding wavelengths.
  • the operating energy E 9 is taken as the midpoint of this transition region.
  • the transition is extremely sharp, it is recognized that some photons of energy > E 9 will be transmitted and some photons of energy ⁇ E 9 will be reflected. In the transition range, the majority of photons with energies greater than E 9 are reflected; the majority of photons with energies less than Eg are transmitted.
  • the above definition of "the dichroic mirror operating at E 9 " should be understood and interpreted in terms of this recognition of the nature of the transition region.
  • the operating energy shifts to lower energies (higher wavelengths) as the dichroic mirror is rotated away from being perpendicular to the direction of incidence of the light beam impinging upon it and "the dichroic mirror operating at E 9 " should be understood and interpreted to apply to the position in which the dichroic mirror is placed relative to the direction of the impinging light.
  • a dichroic mirror is a multilayer structure, typically containing 20 or more alternate layers of two transparent oxides. A sharper transition requires more layers and higher cost.
  • Hybrid is used herein to describe the instant solar cell to indicate that it has neither a lateral architecture nor a vertical architecture but rather a combination of the two.
  • the high efficiency solar cell further comprises an optical element.
  • the intensity or concentration of solar radiation striking a surface is 1X, the normal concentration. It is more difficult and more expensive to achieve high solar cell efficiency with 1X solar light than it is using solar light of higher concentrations.
  • the purpose of the optical element is to collect and concentrate the light impinging upon it and direct the light upon the surface of the dichroic mirror.
  • the optical element comprises a total internal reflecting concentrator that is a static concentrator. This static concentrator increases the power density of the solar light that can be utilized by the solar cell. It is a wide acceptance- angle concentrator that accepts light from a large portion of the sky.
  • the static concentrator is able to capture most of the diffuse light, much of which is in the blue to ultraviolet portion of the spectrum. This diffuse light makes up about 10% of the incident power in the solar spectrum.
  • high levels of concentration are achieved by rejecting light from those portions of the sky in which the power density of the solar radiation is low throughout the year. In this way, concentrations of the solar light are increased by a factor of 10X or more. Higher concentrations are obtained if the position of the concentrator can be adjusted at some time during the year. Light is transmitted through one surface of the concentrator and that surface is adjacent to the surface of the dichroic mirror.
  • Solar light is used herein to refer to the complete solar spectrum that impinges upon the surface of the dichroic mirror, no matter what the concentration. Preferably, the concentration is 10X or higher.
  • the light reflected and/or transmitted by the dichroic mirror can impinge directly upon the surface of the first cell in the appropriate stack.
  • a reflecting mirror can be positioned so that light reflected and/or transmitted by the dichroic mirror is reflected by the reflecting mirror and directed to impinge upon the surface of the first cell in the appropriate stack, i.e., light with photons of energy > E 9 is directed to impinge upon the surface of the first cell in the first cell stack and light with photons of energy ⁇ E 9 is directed to impinge upon the surface of the first cell in the second cell stack.
  • the dichroic mirror and the reflecting mirror can be incorporated in a single optical component.
  • the energy gaps of the respective cells will depend upon the exact composition of the cells and the method of preparation.
  • the energy gap of the GaInP cell is about 1.84 eV
  • the energy gap of the GaAs cell is about 1.43 eV
  • the energy gap of the Si cell is about 1.12 eV
  • the energy gap of the GaInAsP cell is in the range of from about 0.92 to about 0.95 eV
  • the energy gap of the GaInAs cell is in the range of from about 0.69 eV to about 0.74 eV.
  • a cell stack can be a monolithic structure. Alternatively, some or all of the cells can be prepared on individual substrates.
  • the Si cell can be prepared on a substrate that is transparent to the light transmitted by the Si cell and the GaInAsP and GaInAs cells can be prepared as a monolithic tandem.
  • the cells in one or both stacks are electrically connected in series to provide a single output for the stack.
  • all the individual cells in both stacks are contacted with individual electrical connections. This results in a substantial simplification of the solar cell and provides the opportunity to regulate the voltage across each cell at a value to provide optimum operation of the cell.
  • the cells can be connected to a power combiner that provides a single electrical output for the solar cell at the desired voltage.
  • a GaInP cell with an energy gap of 1.84 eV and a GaAs cell with an energy gap of 1.43 eV are the preferred cells for the first cell stack.
  • a two cell stack consisting of a GalnP/GaAs tandem cell can be prepared using, trimethyl gallium, trimethyl indium, phosphine, arsine and other precursors as described by K. A. Bertness et al., Appl. Phys. Lett. 65, 989 (1994). These cells differ from conventional GalnP/GaAs cells because they transmit photons of energy less than their energy gaps.
  • the cells in the tandem cell made and demonstrated did not have individual electrical connections for the individual cells and were electrically in ⁇ series. The cell with the best performance (fabricated by Emcore Corporation,
  • Albuquerque, NM had an active area of 0.1245 cm 2 and was operated at 25.1 0 C and 2OX.
  • the open circuit voltage, V oc was 2.631 V and the short circuit current, l sc , was 41.59 mA.
  • the tandem cell exhibited a fill factor (P ma ⁇ /l sc V Oc ) of 87.24% and an efficiency of 31.7%.
  • the first cell in the second cell stack is a silicon cell with an energy gap of 1.12 eV.
  • Recent innovations have provided the opportunity to provide high performance silicon cells at a low cost. These include the use of thinner silicon junctions, the passivation of silicon surfaces by means other than insulators (M. Taguchi et al., Progress in Photovoltaics: Research and Applications, VoI 8, p 503-513 (2000)), the use of an optically transparent substrate and demonstrated high minority carrier lifetimes in n-type silicon (A. Cuevas et al., Appl. Phys. Lett. 81 , 4952 (2002)). Silicon cells were fabricated using the deposition of the wide- energy gap semiconductor amorphous silicon to passivate the surfaces and achieve higher voltages and efficiencies.
  • the structure used has a heterojuncton between crystalline silicon and amorphous silicon.
  • the device performance is governed by the properties of the crystalline silicon substrate.
  • the silicon cell design 20 is shown in Figures 2A and 2B.
  • Figure 2A is a bottom view. As shown the cell is 4 mm wide and 9 mm long. There is a 1 mm wide metallized band 21 around three edges of the cell.
  • the active cell area 22 is 8 mm x 2 mm.
  • a cross-sectional view through "A-A" is shown in Figure 2B. This view shows the metallized band 21 around the bottom of the silicon cell 23.
  • a transparent conductive oxide, indium tin oxide, 24 is shown on the top of the silicon cell 23.
  • a metallized band 25 on top of the indium tin oxide layer has the same dimensions and shape as metallized band 21.
  • the metallized bands 21 and 25 provide contacts for the electrical connections. Keeping all the metallization outside the active area of the cell ensures maximum transmittivity to the cells below.it.
  • the cell dimensions are small. enough to - allow adequate conduction along the indium tin oxide and through the cell bulk with minimal resistance losses.
  • the silicon cells were tested with solar light filtered through GaAs. This simulated the light with photons of energy ⁇ E 9 that is directed to impinge upon the surface of the first cell in the second cell stack in the solar cell of the invention.
  • the silicon cell with the best performance had an active area of 0.158 cm 2 and was operated at 25.O 0 C plus or minus 1.0 0 C and 2OX filtered by GaAs.
  • the V oc was 0.6900 V and l sc was 37.10 mA.
  • the silicon cell exhibited a fill factor of 61.56% and an efficiency of 4.99%.
  • GaInAs cells can be prepared as described by R. J. Wehrer et al., Conference Record, IEEE Photovoltaic Specialists Conference, 2002, p 884-887.
  • the cells demonstrated were prepared as a monolithic tandem in which the two cells are connected electrically independently. Since the cells were not serially connected electrically, a tunnel junction was not included between the cells. This simplified the growth procedure. An attempt was made to lower the energy gaps of the two cells to realize slightly higher conversion efficiency.
  • the energy gap of the GaInAsP cell was 0.92 eV and the energy gap of the GaInAs cell was 0.69 eV.
  • the 3- terminal electrical connection enabled the measurement of the performance of each cell independentally. The performance of the cells was measured under an idealized silicon filter (1100 nm cutoff).
  • the GaInAsP cell was under 21.4X light.
  • the V oc was 0.400 V and the short circuit current density, J sc> was 281 mA/cm 2 . It exhibited a fill factor of 72% and an efficiency of 2.79%.
  • the GaInAs cell was under 28.9X light.
  • the V 0C was 0.609 V and l sc was 167 mA/cm 2 . It exhibited a fill factor of 73% and an efficiency of 3.46%.
  • the combined efficiency of the two cells was 6.2%.
  • the total efficiency of the two demonstrated cell stack components was 42.9%.
  • the cell stacks can be mounted on one or more mounting boards depending on the configuration of the particular embodiment.
  • a silicon cell that would serve as a scavenger cell to absorb light not otherwise absorbed and convert it into electricity can be placed adjacent to or contiguous to the last cell in one or both stacks.
  • the silicon scavenger cell would have a larger cross-section than the cells in the cell stack, typically at least about 10 times that of the cells in the cell stack.
  • Some of the light intercepted by a scavenger cell is light that is not incident on the cell stack, reflected light, light not absorbed by cells in the stack, for example, by the cells in the first cell stack and diffuse light that did not impinge on the cell stacks.
  • Scavenger silicon cells can be electrically connected in series or in parallel or connected independently.
  • An anti-reflection coating can be applied to the surfaces of any of the cells upon which light impinges to minimize this loss.
  • the light reflected and transmitted by the dichroic mirror propagates in air before impinging on the respective cell stacks.
  • one or more transparent solids can be provided for these lights to propagate through.
  • Figures 3 and 4 the same numbers are used to identify the same entities. For, simplicity, the various light beams are represented by one light ray.
  • FIG. 3 illustrates an embodiment of the hybrid solar cell.
  • the solar cell 3OA is comprised of "cold" dichroic mirror 31 , a first cell stack 32 and a second cell stack 33.
  • the first cell stack 32 contains two cells, a GaInP cell 34 and a GaAs cell 35.
  • the second cell stack 33 contains three cells, a Si cell 36, a GaInAsP cell 37 and a GaInAs 38.
  • the dichroic mirror 31 operates at E 9 and reflects light with photons of energy > E 9 and transmits light with photons of energy ⁇ E 9 .
  • Solar light 41 impinges upon the dichroic mirror 31 which is positioned at an angle of about 45° with respect to the direction of the solar light 41.
  • Light 42 with photons of energy > E 9 is reflected by the dichroic mirror and impinges upon the surface of the first cell 34 of the first cell stack 32.
  • Cells 34 and 35 each absorb light with photons of energy greater than or equal to their energy gap and are transparent to and transmit light with photons of energy less than their energy gap.
  • Light 43 with photons of energy ⁇ E 9 is transmitted by the dichroic mirror and impinges upon the surface of the first cell 36 of the second cell stack 33.
  • Cells 36, 37 and 38 each absorb light with photons of energy greater than or equal to their energy gap and are transparent to and transmit light with photons of energy less than their energy gap.
  • Figure 3 shows an embodiment in which the hybrid solar cell further comprises Si scavenger cells 39 and 40.
  • Si scavenger cell 39 is shown contiguous to cell 35 and Si scavenger cell 40 is shown contiguous to cell 38. Light in their respective areas which does not impinge on the first cell stack 33 and the second cell stack 34 impinges on the Si scavenger cells 39 and 40.
  • FIG 4 illustrates another embodiment of the hybrid solar cell.
  • the solar cell 3OA is comprised of "cold" dichroic mirror 31 , a first cell stack 32, a second cell stack 33 and a reflecting mirror 44.
  • the first cell stack 32 contains two cells, a GaInP cell 34 and a GaAs cell 35.
  • the second cell stack 33 contains three cells, a Si cell 36, a GaInAsP cell 37 and a GaInAs 38.
  • the dichroic mirror 31 operates at E 9 and reflects light with photons of energy > E 9 and transmits light with photons of energy ⁇ E 9 .
  • Solar light 41 impinges upon the dichroic mirror 31 which is positioned so that light is reflected as shown in Figure 4.
  • Light 42 with photons of energy > E 9 is reflected by the dichroic mirror and impinges upon the surface of the first cell 34 of the first cell stack 32.
  • Cells 34 and 35 each absorb light with photons of energy greater than or equal to their energy gap and are transparent to and transmit-light with photons of energy, less than their energy gap.
  • Light 43 with photons of energy ⁇ E 9 is transmitted by the dichroic mirror and is reflected by the reflecting mirror 44. The reflected light 43 impinges upon the surface of the first cell 36 of the second cell stack 33.
  • Cells 36, 37 and 38 each absorb light with photons of energy greater than or equal to their energy gap and are transparent to and transmit light with photons of energy less than their energy gap.
  • Figure 4 shows an embodiment in which the hybrid solar cell further comprises Si scavenger cells 39 and 40.
  • Si scavenger cell 39 is shown contiguous to cell 35 and Si scavenger cell 40 is shown contiguous to cell 38.
  • the cell stacks and the Si scavenger cells can readily be supported on the same mounting board.

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire hybride à haut rendement composée d'un miroir dichroïque, d'un premier empilement de cellules constitué de deux cellules, la première cellule étant une cellule en GaInP et la seconde cellule étant une cellule en GaAs, et d'un second empilement de cellules constitué de trois cellules, la première cellule étant une cellule en Si, la deuxième cellule étant une cellule en GaInAsP et la troisième cellule étant une cellule en GaInAs. Le miroir dichroïque permet de séparer la lumière du soleil en de composants spectraux, un composant de lumière contenant des photons ayant une énergie supérieure ou égale à Eg qui vient frapper le premier empilement de cellules et un composant de lumière contenant des photons ayant une énergie inférieure à Eg qui vient frapper le second empilement de cellules.
PCT/US2008/009732 2007-08-29 2008-08-14 Cellule solaire hybride à haut rendement Ceased WO2009032052A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010522901A JP2010538455A (ja) 2007-08-29 2008-08-14 高効率ハイブリッド太陽電池
EP08795328A EP2183790A2 (fr) 2007-08-29 2008-08-14 Cellule solaire hybride à haut rendement
CN200880105013.8A CN101919065A (zh) 2007-08-29 2008-08-14 高效混合太阳能电池
US12/568,213 US20100078063A1 (en) 2007-08-29 2009-09-28 High efficiency hybrid solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96679207P 2007-08-29 2007-08-29
US60/966,792 2007-08-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/568,213 Continuation-In-Part US20100078063A1 (en) 2007-08-29 2009-09-28 High efficiency hybrid solar cell

Publications (2)

Publication Number Publication Date
WO2009032052A2 true WO2009032052A2 (fr) 2009-03-12
WO2009032052A3 WO2009032052A3 (fr) 2010-02-25

Family

ID=40429590

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/009732 Ceased WO2009032052A2 (fr) 2007-08-29 2008-08-14 Cellule solaire hybride à haut rendement

Country Status (5)

Country Link
EP (1) EP2183790A2 (fr)
JP (1) JP2010538455A (fr)
KR (1) KR20100066525A (fr)
CN (1) CN101919065A (fr)
WO (1) WO2009032052A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011097682A1 (fr) * 2010-02-12 2011-08-18 Newsouth Innovations Pty Limited Cellules si comportant des cellules multijonctions
ITPD20110084A1 (it) * 2011-03-16 2012-09-17 Split Energy Srl Apparecchiatura per la conversione di energia solare in energia elettrica.
JP2012204673A (ja) * 2011-03-25 2012-10-22 Tokyo Univ Of Agriculture & Technology 直列接続型ソーラーセル及びソーラーセルシステム
US8513833B2 (en) 2010-06-20 2013-08-20 Hewlett-Packard Development Company, L.P. Circuit limiting an absolute voltage difference between electrical paths of photovoltaic dies

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121285167A (zh) * 2025-12-09 2026-01-06 华南理工大学 具有散热结构的光谱分裂Si/GaAs空间叠层太阳能电池及制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5902417A (en) * 1996-12-12 1999-05-11 Hughes Electornics Corporation High efficiency tandem solar cells, and operating method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011097682A1 (fr) * 2010-02-12 2011-08-18 Newsouth Innovations Pty Limited Cellules si comportant des cellules multijonctions
US8912430B2 (en) 2010-02-12 2014-12-16 Newsouth Innovations Pty Limited Si cells with III-V multijunction cells
US8513833B2 (en) 2010-06-20 2013-08-20 Hewlett-Packard Development Company, L.P. Circuit limiting an absolute voltage difference between electrical paths of photovoltaic dies
ITPD20110084A1 (it) * 2011-03-16 2012-09-17 Split Energy Srl Apparecchiatura per la conversione di energia solare in energia elettrica.
WO2012123818A1 (fr) * 2011-03-16 2012-09-20 SPLIT ENERGY S.r.l. Appareil de transformation de l'énergie solaire en puissance électrique
JP2012204673A (ja) * 2011-03-25 2012-10-22 Tokyo Univ Of Agriculture & Technology 直列接続型ソーラーセル及びソーラーセルシステム

Also Published As

Publication number Publication date
JP2010538455A (ja) 2010-12-09
KR20100066525A (ko) 2010-06-17
EP2183790A2 (fr) 2010-05-12
WO2009032052A3 (fr) 2010-02-25
CN101919065A (zh) 2010-12-15

Similar Documents

Publication Publication Date Title
US20090320903A1 (en) High efficiency solar cell with a silicon scavenger cell
US11211510B2 (en) Multijunction solar cell with bonded transparent conductive interlayer
US6162987A (en) Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance
US11482633B2 (en) Voltage matched multijunction solar cell
US20100170557A1 (en) High Efficiency Solar Cell With Surrounding Silicon Scavenger Cells
JP2012204673A (ja) 直列接続型ソーラーセル及びソーラーセルシステム
WO2009032052A2 (fr) Cellule solaire hybride à haut rendement
JP6222667B2 (ja) 蓄電型ソーラー発電装置及び蓄電型ソーラー発電システム
US20100078063A1 (en) High efficiency hybrid solar cell
Wilt et al. Electrical and optical performance characteristics of 0.74 eV p/n InGaAs monolithic interconnected modules
KR20110003802A (ko) 탠덤형 박막 태양전지 및 그의 제조방법
Kosten et al. Spectrum splitting photovoltaics: light trapping filtered concentrator for ultrahigh photovoltaic efficiency
US20130206202A1 (en) Solar cell
CN116014019A (zh) 一种薄膜太阳能电池、其制备方法、光伏组件及发电设备
US12040419B2 (en) Self-similar high efficiency solar cells and concentrators
Reber et al. Solar mini module made with epitaxial crystalline silicon thin-film wafer equivalents
van der Heide et al. email: Johan. vanderheide (imec. be--.

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880105013.8

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08795328

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2010522901

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008795328

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20107006785

Country of ref document: KR

Kind code of ref document: A