WO2009041685A1 - シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 - Google Patents

シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 Download PDF

Info

Publication number
WO2009041685A1
WO2009041685A1 PCT/JP2008/067653 JP2008067653W WO2009041685A1 WO 2009041685 A1 WO2009041685 A1 WO 2009041685A1 JP 2008067653 W JP2008067653 W JP 2008067653W WO 2009041685 A1 WO2009041685 A1 WO 2009041685A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
quartz glass
crucible
quartz
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067653
Other languages
English (en)
French (fr)
Inventor
Hiroshi Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Super Quartz Corp
Original Assignee
Japan Super Quartz Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Super Quartz Corp filed Critical Japan Super Quartz Corp
Priority to US12/303,147 priority Critical patent/US8871026B2/en
Priority to EP08825825.6A priority patent/EP2202335B1/en
Publication of WO2009041685A1 publication Critical patent/WO2009041685A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/80—Glass compositions containing bubbles or microbubbles, e.g. opaque quartz glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/10—Melting processes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2204/00—Glasses, glazes or enamels with special properties
    • C03C2204/08—Glass having a rough surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

　結晶化促進剤を用いずに、使用時の高温下でもルツボの変形を生じ難く、かつ製造が容易な石英ガラスルツボを提供するために、シリコン単結晶の引き上げに用いる石英ガラスルツボであって、外面層が気泡含有石英ガラス層によって形成されており、内面層が肉眼で気泡が観察されない石英ガラス層によって形成されており、外面層の表面に未溶融ないし半溶融の石英層（半溶融石英層と略称する）を有し、該半溶融石英層の中心線平均粗さ（Ｒａ）が５０μｍ～２００μｍであることを特徴とし、好ましくは、半溶融石英層の層厚が０．５～２．０ｍｍである。
PCT/JP2008/067653 2007-09-28 2008-09-29 シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 Ceased WO2009041685A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/303,147 US8871026B2 (en) 2007-09-28 2008-09-29 Vitreous silica crucible for pulling single-crystal silicon and method of manufacturing the same
EP08825825.6A EP2202335B1 (en) 2007-09-28 2008-09-29 Quartz glass crucible for pulling silicon single crystal and method for manufacturing the crucible

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007256156A JP5229778B2 (ja) 2007-09-28 2007-09-28 シリコン単結晶引き上げ用石英ガラスルツボの製造方法
JP2007-256156 2007-09-28

Publications (1)

Publication Number Publication Date
WO2009041685A1 true WO2009041685A1 (ja) 2009-04-02

Family

ID=40511563

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067653 Ceased WO2009041685A1 (ja) 2007-09-28 2008-09-29 シリコン単結晶引き上げ用石英ガラスルツボとその製造方法

Country Status (6)

Country Link
US (1) US8871026B2 (ja)
EP (1) EP2202335B1 (ja)
JP (1) JP5229778B2 (ja)
KR (1) KR20100069532A (ja)
TW (1) TWI382002B (ja)
WO (1) WO2009041685A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019163192A (ja) * 2018-03-20 2019-09-26 日本電気硝子株式会社 放射線検出用ガラスの製造方法
JP2020186145A (ja) * 2019-05-13 2020-11-19 株式会社Sumco シリコン単結晶引き上げ用石英ガラスルツボ及びその製造方法
JP2022093544A (ja) * 2018-02-28 2022-06-23 株式会社Sumco シリカガラスルツボ

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101154931B1 (ko) * 2009-01-08 2012-06-13 쟈판 스파 쿼츠 가부시키가이샤 석영 유리 도가니 제조 장치
JP5397857B2 (ja) * 2009-10-20 2014-01-22 株式会社Ｓｕｍｃｏ 石英ガラスルツボの製造方法および製造装置
JP5574534B2 (ja) * 2010-12-28 2014-08-20 株式会社Ｓｕｍｃｏ 複合ルツボ
WO2013112231A1 (en) * 2012-01-27 2013-08-01 Gtat Corporation Method of producing monocrystalline silicon
CN105210173A (zh) * 2013-05-23 2015-12-30 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
JP6123001B2 (ja) * 2016-05-31 2017-04-26 株式会社Sumco シリカガラスルツボの評価方法、シリコン単結晶の製造方法
KR101829291B1 (ko) * 2016-08-05 2018-02-19 에스케이실트론 주식회사 도가니 및 이를 포함하는 단결정 성장 장치
US20180086132A1 (en) * 2016-09-26 2018-03-29 Robert Moore Storage Organizer
CN108531980B (zh) * 2018-05-29 2020-12-11 宁夏富乐德石英材料有限公司 改良石英坩埚及其制作方法
WO2020137648A1 (ja) 2018-12-27 2020-07-02 株式会社Sumco 石英ガラスルツボ及びこれを用いたシリコン単結晶の製造方法並びに石英ガラスルツボの赤外線透過率測定方法及び製造方法
JP7192883B2 (ja) 2018-12-27 2022-12-20 株式会社Sumco 石英ガラスルツボ
JP7157932B2 (ja) * 2019-01-11 2022-10-21 株式会社Sumco シリカガラスルツボの製造装置および製造方法
US20260035829A1 (en) 2022-10-25 2026-02-05 Sumco Corporation Quartz glass crucible for silicon single-crystal pulling and manufacturing method utilizing same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63145984A (ja) * 1986-12-09 1988-06-18 Toshiba Glass Co Ltd 線量計用ガラス素子
JPH0753295A (ja) * 1993-08-10 1995-02-28 Toshiba Ceramics Co Ltd 石英ガラスルツボ
JP2004123508A (ja) * 2002-08-01 2004-04-22 Tosoh Corp 石英ガラス部品及びその製造方法並びにそれを用いた装置
JP2004299927A (ja) * 2003-03-28 2004-10-28 Japan Siper Quarts Corp 石英ガラスルツボ
JP2004352580A (ja) * 2003-05-30 2004-12-16 Japan Siper Quarts Corp シリコン単結晶引上用石英ガラスルツボとその引上方法
JP2005239533A (ja) * 2004-08-06 2005-09-08 Shinetsu Quartz Prod Co Ltd シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法
JP2007153625A (ja) * 2005-11-30 2007-06-21 Japan Siper Quarts Corp 結晶化し易い石英ガラス部材とその用途

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3014311C2 (de) 1980-04-15 1982-06-16 Heraeus Quarzschmelze Gmbh, 6450 Hanau Verfahren zur Herstellung von Quarzglastiegeln und Vorrichtung zur Durchführung dieses Verfahrens
JPS61182952U (ja) * 1985-04-27 1986-11-14
US4935046A (en) 1987-12-03 1990-06-19 Shin-Etsu Handotai Company, Limited Manufacture of a quartz glass vessel for the growth of single crystal semiconductor
JPH0729871B2 (ja) * 1987-12-03 1995-04-05 信越半導体 株式会社 単結晶引き上げ用石英るつぼ
JP3100836B2 (ja) 1994-06-20 2000-10-23 信越石英株式会社 石英ガラスルツボとその製造方法
JP4285788B2 (ja) * 1996-03-14 2009-06-24 信越石英株式会社 単結晶引き上げ用大口径石英るつぼの製造方法
JP3583604B2 (ja) 1998-01-12 2004-11-04 東芝セラミックス株式会社 石英ガラスルツボとその製造方法
JP2000159593A (ja) * 1998-11-24 2000-06-13 Toshiba Ceramics Co Ltd 石英ガラスるつぼの製造方法
JP4454059B2 (ja) * 1999-01-29 2010-04-21 信越石英株式会社 シリコン単結晶引き上げ用大口径石英ガラスるつぼ
US6641663B2 (en) * 2001-12-12 2003-11-04 Heracus Shin-Estu America Silica crucible with inner layer crystallizer and method
US20030012899A1 (en) * 2001-07-16 2003-01-16 Heraeus Shin-Etsu America Doped silica glass crucible for making a silicon ingot
JP2003095678A (ja) 2001-07-16 2003-04-03 Heraeus Shin-Etsu America シリコン単結晶製造用ドープ石英ガラスルツボ及びその製造方法
US7118789B2 (en) * 2001-07-16 2006-10-10 Heraeus Shin-Etsu America Silica glass crucible
KR100913116B1 (ko) * 2002-04-04 2009-08-19 토소가부시키가이샤 석영유리 용사부품 및 그 제조방법
JP4076416B2 (ja) * 2002-09-20 2008-04-16 コバレントマテリアル株式会社 石英ルツボとその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63145984A (ja) * 1986-12-09 1988-06-18 Toshiba Glass Co Ltd 線量計用ガラス素子
JPH0753295A (ja) * 1993-08-10 1995-02-28 Toshiba Ceramics Co Ltd 石英ガラスルツボ
JP2004123508A (ja) * 2002-08-01 2004-04-22 Tosoh Corp 石英ガラス部品及びその製造方法並びにそれを用いた装置
JP2004299927A (ja) * 2003-03-28 2004-10-28 Japan Siper Quarts Corp 石英ガラスルツボ
JP2004352580A (ja) * 2003-05-30 2004-12-16 Japan Siper Quarts Corp シリコン単結晶引上用石英ガラスルツボとその引上方法
JP2005239533A (ja) * 2004-08-06 2005-09-08 Shinetsu Quartz Prod Co Ltd シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法
JP2007153625A (ja) * 2005-11-30 2007-06-21 Japan Siper Quarts Corp 結晶化し易い石英ガラス部材とその用途

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2202335A4 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022093544A (ja) * 2018-02-28 2022-06-23 株式会社Sumco シリカガラスルツボ
JP7408057B2 (ja) 2018-02-28 2024-01-05 株式会社Sumco シリカガラスルツボ
JP2019163192A (ja) * 2018-03-20 2019-09-26 日本電気硝子株式会社 放射線検出用ガラスの製造方法
JP7022386B2 (ja) 2018-03-20 2022-02-18 日本電気硝子株式会社 放射線検出用ガラスの製造方法
JP2020186145A (ja) * 2019-05-13 2020-11-19 株式会社Sumco シリコン単結晶引き上げ用石英ガラスルツボ及びその製造方法
JP7172844B2 (ja) 2019-05-13 2022-11-16 株式会社Sumco シリコン単結晶引き上げ用石英ガラスルツボ及びその製造方法

Also Published As

Publication number Publication date
US8871026B2 (en) 2014-10-28
JP2009084114A (ja) 2009-04-23
KR20100069532A (ko) 2010-06-24
EP2202335A1 (en) 2010-06-30
EP2202335B1 (en) 2017-03-22
EP2202335A4 (en) 2011-09-14
JP5229778B2 (ja) 2013-07-03
TW200922889A (en) 2009-06-01
US20100236473A1 (en) 2010-09-23
TWI382002B (zh) 2013-01-11

Similar Documents

Publication Publication Date Title
WO2009041685A1 (ja) シリコン単結晶引き上げ用石英ガラスルツボとその製造方法
TW200730672A (en) Quartz glass crucible, method of producing the same, and application thereof
US8852721B2 (en) Method for cutting tempered glass and preparatory tempered glass structure
WO2011065796A3 (ko) 안티 글레어 글래스 제조 방법
EP1972968A3 (en) Optical transparent member and optical system using the same
TW200943478A (en) Method for manufacturing SOI substrate and semiconductor device
WO2009061353A3 (en) Production of free-standing solid state layers by thermal processing of substrates with a polymer
EP2075355A3 (en) Inner crystallization crucible and pulling method using the crucible
WO2001092609A3 (en) Multilayered quartz glass crucible and method of its production
TW200951499A (en) Anti-glare film, method of manufacturing the same, and display device
WO2008056080A3 (fr) Flottage de vitroceramique
WO2007116315A8 (en) Method of manufacturing a silicon carbide single crystal
WO2006081006A3 (en) Light polarizing products and method of making same
JP2010184819A5 (ja)
JP2009158943A5 (ja)
WO2009014957A3 (en) Methods for manufacturing cast silicon from seed crystals
DE602008004297D1 (de) Hochreiner glasartiger Quarztiegel zum Ziehen eines Einkristall-Siliciumblocks mit großem Durchmesser
WO2011034300A3 (ko) 곡면 형태의 디스플레이 패널 제조 방법
TW200736682A (en) Silicon based optical waveguide structures and methods of manufacture
EP2141266A3 (en) Silica glass crucible and method of pulling silicon single crystal with silica glass crucible
EP3524581A3 (en) Glass article and method for producing the same
WO2016186935A1 (en) Glass article comprising light extraction features and methods for making the same
DE602008005099D1 (de) Hochreiner Quarzglastiegel zum Ziehen eines Einkristall-Siliciumblocks mit großem Durchmesser sowie Herstellungsverfahren
WO2008093576A1 (ja) シリコン結晶素材及びその製造方法
JP2011162408A (ja) ガラスフィルムの製造方法

Legal Events

Date Code Title Description
REEP Request for entry into the european phase

Ref document number: 2008825825

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020087029178

Country of ref document: KR

Ref document number: 2008825825

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12303147

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08825825

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE