WO2009057601A1 - Iii族窒化物電子デバイス及びiii族窒化物半導体エピタキシャル基板 - Google Patents

Iii族窒化物電子デバイス及びiii族窒化物半導体エピタキシャル基板 Download PDF

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Publication number
WO2009057601A1
WO2009057601A1 PCT/JP2008/069564 JP2008069564W WO2009057601A1 WO 2009057601 A1 WO2009057601 A1 WO 2009057601A1 JP 2008069564 W JP2008069564 W JP 2008069564W WO 2009057601 A1 WO2009057601 A1 WO 2009057601A1
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Prior art keywords
layer
iii nitride
electronic device
epitaxial substrate
semiconductor epitaxial
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Ceased
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PCT/JP2008/069564
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English (en)
French (fr)
Inventor
Shin Hashimoto
Tatsuya Tanabe
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to CN2008801142642A priority Critical patent/CN101842884B/zh
Priority to US12/740,770 priority patent/US8541816B2/en
Priority to EP08845789A priority patent/EP2211376A4/en
Publication of WO2009057601A1 publication Critical patent/WO2009057601A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

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  • Electrodes Of Semiconductors (AREA)

Abstract

III窒化物系ヘテロ接合トランジスタ１１ａでは、第２のＡｌＹ１ＩｎＹ２Ｇａ１－Ｙ１－Ｙ２Ｎ層１５は、第１のＡｌＸ１ＩｎＸ２Ｇａ１－Ｘ１－Ｘ２Ｎ層１３ａとヘテロ接合２１を成す。第１の電極１７は、第１のＡｌＸ１ＩｎＸ２Ｇａ１－Ｘ１－Ｘ２Ｎ層１３ａにショットキ接合を成す。第１のＡｌＸ１ＩｎＸ２Ｇａ１－Ｘ１－Ｘ２Ｎ層１３ａ及び第２のＡｌＹ１ＩｎＹ２Ｇａ１－Ｙ１－Ｙ２Ｎ層１５は、基板２３上に設けられている。電極１７ａ、１８ａ、１９ａは、それぞれ、ソース電極、ゲート電極及びドレイン電極を含む。第１のＡｌＸ１ＩｎＸ２Ｇａ１－Ｘ１－Ｘ２Ｎ層１３ａの炭素濃度ＮＣ１３は１×１０１７ｃｍ－３未満である。第２のＡｌＹ１ＩｎＹ２Ｇａ１－Ｙ１－Ｙ２Ｎ層１５の転位密度Ｄが１×１０８ｃｍ－２である。ヘテロ接合２１により、二次元電子ガス層２５が生成される。これによって、低損失な窒化ガリウム系電子デバイスを提供する。
PCT/JP2008/069564 2007-11-02 2008-10-28 Iii族窒化物電子デバイス及びiii族窒化物半導体エピタキシャル基板 Ceased WO2009057601A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008801142642A CN101842884B (zh) 2007-11-02 2008-10-28 Ⅲ族氮化物电子器件及ⅲ族氮化物半导体外延衬底
US12/740,770 US8541816B2 (en) 2007-11-02 2008-10-28 III nitride electronic device and III nitride semiconductor epitaxial substrate
EP08845789A EP2211376A4 (en) 2007-11-02 2008-10-28 III NITRIDE ELECTRONIC ELEMENT AND III NITRIDE SEMICONDUCTOR PITAXIAL SUBSTRATE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007286534A JP4462330B2 (ja) 2007-11-02 2007-11-02 Ｉｉｉ族窒化物電子デバイス
JP2007-286534 2007-11-02

Publications (1)

Publication Number Publication Date
WO2009057601A1 true WO2009057601A1 (ja) 2009-05-07

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Country Status (7)

Country Link
US (1) US8541816B2 (ja)
EP (1) EP2211376A4 (ja)
JP (1) JP4462330B2 (ja)
KR (1) KR20100074187A (ja)
CN (1) CN101842884B (ja)
TW (1) TW200937634A (ja)
WO (1) WO2009057601A1 (ja)

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JP4462330B2 (ja) 2007-11-02 2010-05-12 住友電気工業株式会社 Ｉｉｉ族窒化物電子デバイス
JP2011035066A (ja) * 2009-07-30 2011-02-17 Sumitomo Electric Ind Ltd 窒化物半導体素子、及び窒化物半導体素子を作製する方法
JP2010045416A (ja) * 2009-11-25 2010-02-25 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物電子デバイス
JP2012033575A (ja) * 2010-07-28 2012-02-16 Sumitomo Electric Ind Ltd 半導体装置
JP2013033930A (ja) * 2011-06-29 2013-02-14 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、及び、ｉｉｉ族窒化物半導体素子の製造方法
JP6015053B2 (ja) * 2012-03-26 2016-10-26 富士通株式会社 半導体装置の製造方法及び窒化物半導体結晶の製造方法
JP5656930B2 (ja) * 2012-07-05 2015-01-21 古河電気工業株式会社 窒化物系化合物半導体素子
WO2014024310A1 (ja) * 2012-08-10 2014-02-13 日本碍子株式会社 半導体素子、ｈｅｍｔ素子、および半導体素子の製造方法
KR102062901B1 (ko) 2012-08-24 2020-01-06 서울반도체 주식회사 비스무트 도핑된 반절연성 3족 질화물 웨이퍼 및 그의 제조 방법
JP5787417B2 (ja) * 2013-05-14 2015-09-30 コバレントマテリアル株式会社 窒化物半導体基板
JP6175009B2 (ja) * 2014-02-06 2017-08-02 住友化学株式会社 高耐圧窒化ガリウム系半導体デバイス及びその製造方法
JP2015176936A (ja) * 2014-03-13 2015-10-05 株式会社東芝 半導体装置
JP6305137B2 (ja) * 2014-03-18 2018-04-04 住友化学株式会社 窒化物半導体積層物および半導体装置
JP6249868B2 (ja) * 2014-04-18 2017-12-20 サンケン電気株式会社 半導体基板及び半導体素子
US9419125B1 (en) * 2015-06-16 2016-08-16 Raytheon Company Doped barrier layers in epitaxial group III nitrides
JP6682391B2 (ja) 2016-07-22 2020-04-15 株式会社東芝 半導体装置、電源回路、及び、コンピュータ
CN117542887B (zh) * 2024-01-10 2024-04-30 英诺赛科（珠海）科技有限公司 一种氮化镓射频器件以及制备方法

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See also references of EP2211376A4

Also Published As

Publication number Publication date
JP4462330B2 (ja) 2010-05-12
US8541816B2 (en) 2013-09-24
KR20100074187A (ko) 2010-07-01
US20100230687A1 (en) 2010-09-16
CN101842884B (zh) 2012-05-16
JP2009117482A (ja) 2009-05-28
EP2211376A4 (en) 2012-04-04
CN101842884A (zh) 2010-09-22
TW200937634A (en) 2009-09-01
EP2211376A1 (en) 2010-07-28

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