WO2009057988A3 - Commutateur mems à radiofréquence - Google Patents

Commutateur mems à radiofréquence Download PDF

Info

Publication number
WO2009057988A3
WO2009057988A3 PCT/MY2008/000122 MY2008000122W WO2009057988A3 WO 2009057988 A3 WO2009057988 A3 WO 2009057988A3 MY 2008000122 W MY2008000122 W MY 2008000122W WO 2009057988 A3 WO2009057988 A3 WO 2009057988A3
Authority
WO
WIPO (PCT)
Prior art keywords
mems switch
radio frequency
switch
mems
disclosed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/MY2008/000122
Other languages
English (en)
Other versions
WO2009057988A2 (fr
Inventor
Suraya Sulaiman
Mohd Ismahadi Syono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mimos Bhd
Original Assignee
Mimos Bhd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Bhd filed Critical Mimos Bhd
Publication of WO2009057988A2 publication Critical patent/WO2009057988A2/fr
Publication of WO2009057988A3 publication Critical patent/WO2009057988A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un commutateur microélectromécanique (MEMS) à radiofréquence. Ce procédé fait intervenir quatre masques, chaque masque étant conçu à différentes étapes d'un processus de photolithographie qui permet d'obtenir une surface de dioxyde de silicium sensiblement plane, la planarité étant un facteur critique permettant d'améliorer la performance mécanique du commutateur MEMS RF. Le procédé de l'invention consiste, entre autres, à : déposer du silicium sur un liquide vitreux pour remplir de petits trous afin d'obtenir une surface d'oxyde de silicium lisse; effectuer une morsure de descente d'intensité et un gravage humide à l'aide d'une solution chimique appelée Pad Etch. L'invention concerne également un commutateur RF MEMS comprenant une électrode inférieure (30) formée sur la surface d'un substrat en silicium (31), une membrane en aluminium (32) suspendue au-dessus de l'électrode et une couche diélectrique (33) couvrant l'électrode inférieure et fabriquée par le processus susmentionné.
PCT/MY2008/000122 2007-10-31 2008-10-22 Commutateur mems à radiofréquence Ceased WO2009057988A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MYPI20071873 2007-10-31
MYPI20071873A MY146154A (en) 2007-10-31 2007-10-31 Radio frequency mems switch

Publications (2)

Publication Number Publication Date
WO2009057988A2 WO2009057988A2 (fr) 2009-05-07
WO2009057988A3 true WO2009057988A3 (fr) 2009-07-16

Family

ID=40591676

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/MY2008/000122 Ceased WO2009057988A2 (fr) 2007-10-31 2008-10-22 Commutateur mems à radiofréquence

Country Status (2)

Country Link
MY (1) MY146154A (fr)
WO (1) WO2009057988A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102205942B (zh) * 2011-05-13 2015-11-04 上海集成电路研发中心有限公司 Mems牺牲层结构制造方法
EP2725595A1 (fr) * 2012-10-25 2014-04-30 Delfmems Condensateur fixe MEMS comprenant un espace contenant un gaz et procédé de fabrication dudit condensateur
CN103345057B (zh) * 2013-05-31 2016-06-01 华中科技大学 一种微型的桥式结构及其制备方法
CN113670994B (zh) * 2021-08-26 2024-12-03 南京高华科技股份有限公司 基于相位检测原理的mems湿度传感器及制备方法
CN117097361B (zh) * 2023-07-20 2024-04-30 湖北九峰山实验室 一种集成多频段天线和射频开关的器件及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6621387B1 (en) * 2001-02-23 2003-09-16 Analatom Incorporated Micro-electro-mechanical systems switch
KR20040048026A (ko) * 2002-12-02 2004-06-07 삼성전자주식회사 점착현상을 방지할 수 있는 ｒｆ ｍｅｍｓ 스위치
KR20050068584A (ko) * 2003-12-30 2005-07-05 매그나칩 반도체 유한회사 고주파 소자의 스위치 형성방법
US7265647B2 (en) * 2004-03-12 2007-09-04 The Regents Of The University Of California High isolation tunable MEMS capacitive switch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6621387B1 (en) * 2001-02-23 2003-09-16 Analatom Incorporated Micro-electro-mechanical systems switch
KR20040048026A (ko) * 2002-12-02 2004-06-07 삼성전자주식회사 점착현상을 방지할 수 있는 ｒｆ ｍｅｍｓ 스위치
KR20050068584A (ko) * 2003-12-30 2005-07-05 매그나칩 반도체 유한회사 고주파 소자의 스위치 형성방법
US7265647B2 (en) * 2004-03-12 2007-09-04 The Regents Of The University Of California High isolation tunable MEMS capacitive switch

Also Published As

Publication number Publication date
MY146154A (en) 2012-06-29
WO2009057988A2 (fr) 2009-05-07

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