WO2009062831A1 - Élément scintillateur, et détecteur de rayonnement solide pourvu d'un tel élément - Google Patents

Élément scintillateur, et détecteur de rayonnement solide pourvu d'un tel élément Download PDF

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Publication number
WO2009062831A1
WO2009062831A1 PCT/EP2008/064397 EP2008064397W WO2009062831A1 WO 2009062831 A1 WO2009062831 A1 WO 2009062831A1 EP 2008064397 W EP2008064397 W EP 2008064397W WO 2009062831 A1 WO2009062831 A1 WO 2009062831A1
Authority
WO
WIPO (PCT)
Prior art keywords
active layer
scintillator
layer
scintillator element
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/064397
Other languages
German (de)
English (en)
Inventor
Alexander Rack
Maurice Couchaud
Thierry Martin
Klaus Dupré
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungsinstitut fur Mineralische und Metallische Werkstoffe Edelsteine/edelmetalle GmbH
Original Assignee
Forschungsinstitut fur Mineralische und Metallische Werkstoffe Edelsteine/edelmetalle GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungsinstitut fur Mineralische und Metallische Werkstoffe Edelsteine/edelmetalle GmbH filed Critical Forschungsinstitut fur Mineralische und Metallische Werkstoffe Edelsteine/edelmetalle GmbH
Publication of WO2009062831A1 publication Critical patent/WO2009062831A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal

Definitions

  • the present invention relates to a scintillator element for converting high energy radiation or charged particles into low energy radiation.
  • Szintillatorelement an element which by high-energy radiation, such as. As ⁇ -radiation or X-rays, and can be excited by charged particles and the excitation energy by electromagnetic radiation of lower energy, usually emits light in the UV or visible range again. By measuring the amount of light can be closed on the introduced into the scintillator energy.
  • the invention further relates to a radiation detector comprising such a scintillator element.
  • a radiation detector is understood to mean an element for measuring electromagnetic radiation.
  • the radiation detector may be an X-ray detector.
  • the imaging X-ray systems such. As the computed tomography, X-ray penetrates a person to be examined. The X-ray radiation is weakened by the tissue and / or the bones and the weakened X-radiation is then detected in a spatially resolved manner.
  • the direct detectors convert the incident, ionizing radiation directly into electronic charge
  • the indirect detectors first convert the incident, ionizing radiation into optical photons by means of a luminescent screen and then detect them in a further step.
  • Direct detectors generally have a high energy resolution.
  • indirect detectors achieve significantly higher spatial resolutions, which is due in part to the fact that the visible light can be imaged with conventional optics from light microscopy.
  • the efficiency and image quality of an indirect detector depends on the scintillator materials used. Scintillator materials are generally solid, which by high-energy radiation, such as. B. ⁇ -radiation and release this energy as UV radiation or visible light again.
  • the ideal scintillator has a high absorption power for the ionizing radiation used, putting the absorbed energy into the visible as much as possible Light around which is emitted close to the moment of absorption of the radiation quantum into a short pulse, and is transparent to the wavelength of its maximum emission.
  • the scintillator element is a multilayer structure with a passive carrier layer of non-scintillating material and an active layer of scintillating material applied to the carrier layer.
  • the microscope optics used to image the emitted light generally have a limited depth of focus which increases with increasing magnification, i. H. higher resolutions, decreases. Accordingly, at microscopic resolutions close to the wavelength of the visible light emitted by the scintillator element, the active phosphor layer must exactly fill the depth of field of the optics for optimum efficiency and minimum image blur. In principle, the absorption increases with the thickness of the crystal. At the same time, however, the image blur increases as the thickness of the active layer becomes greater than the depth of field of the imaging optics. For this reason, it is essential to form the active layer on a non-scintillating substrate because light emitted from the substrate would be generated out of the depth-of-field, thus reducing the contrast and sharpness of the image.
  • the active layer is selected such that the high energy radiation, preferably X-radiation, is converted to visible or ultraviolet light.
  • the passive carrier layer is monocrystalline.
  • the support material may be prepared by a conventional crystal growth method, e.g. B. the Czochralskivon be prepared as a bulk crystal of a melt.
  • the required substrate is produced by sawing, grinding and polishing the volume crystal.
  • the carrier layer preferably has the form of a round or polygonal disk with plane-parallel sides and preferably has a thickness of between 0.1 and 2 mm and particularly preferably of ⁇ 0.5 mm.
  • the carrier material has proven to be particularly easy to manufacture.
  • the substrate for visible, ultraviolet light is almost transparent and it is not possible to excite the substrate by high energy radiation for emission in the visible UV range.
  • the active layer is crystalline, preferably monocrystalline.
  • the crystalline formation of the active layer enables a high homogeneity within the active layer, whereby the spatial resolution is improved.
  • the active layer is grown on the passive carrier layer, with the active layer particularly preferably having the same crystallographic orientation as the passive carrier layer.
  • a monocrystalline active layer has a high optical quality and can generally be used for resolutions below 1 ⁇ m.
  • the active layer can be applied to the support material in the required thickness, for example, by liquid phase epitaxy, optionally also by another crystal growth process.
  • the passive support layer serves as a crystalline base on which the active layer is grown crystallographically oriented.
  • the scintillator material may be in the required composition in a high temperature solvent, e.g. B. lead oxide (PbO) or lead molybdate (PbMoO 4 ) are dissolved at temperatures above 1000 0 C.
  • the application of the active layer to the substrate is then started by immersing the substrate in the solution at a suitable temperature.
  • the final layer thickness is determined by the process duration.
  • the substrate is coated on both sides with an active layer.
  • one of the active layers is removed and the support is brought to the thickness required for application.
  • the active layer has a thickness between 0.001 and 0.5 mm. - A -
  • the active layer is structured, wherein the structuring preferably consists of trenches introduced into the active layer.
  • the trenches preferably have a depth which is greater than or equal to the thickness of the active layer.
  • the structuring has the form of a regular grating, preferably a rectangular or square grating. It has been found that the trenches best have a width between 0.1 and 20 ⁇ m and preferably less than 5 ⁇ m.
  • adjacent trenches have a distance from each other, the see between 1 and 500 .mu.m and preferably less than 50 .mu.m and particularly preferably less than 10 .mu.m.
  • the active layer thereby acquires a columnar microstructure.
  • Light produced by scintillation in a column is restricted at the column walls by total reflection in its propagation direction, which reduces blurring of the image.
  • the structuring can be carried out, for example, by removing material via the thickness of the active layer, possibly even into the substrate.
  • As structuring methods chemical etching, ion etching, mechanical abrasion, laser assisted ablation and other suitable methods are possible.
  • a reflection-reducing layer is applied to the active layer and / or the passive carrier layer.
  • the coating can be done on one or both sides.
  • a material-matched, very thin dielectric layer of MgF 2 , TaO 2 , SiO 2 can be evaporated, whereby the reflectance of the surfaces of about
  • the reflection-reducing layer is preferably applied to the carrier layer on the side facing away from the active layer.
  • the scintillator element according to the invention is used within a solid-state radiation detector which, in addition to the scintillator element, also has a converter device for converting visible and / or ultraviolet light into electrical signals and imaging optics for imaging the active layer of the scintillator element on the converter device.
  • FIG. 1 shows a schematic representation of a scintillator element according to the invention
  • FIG. 2 shows a schematic representation of a second embodiment of the scintillator element according to the invention
  • Figure 3 is a schematic diagram illustrating the reflection ratios without and with structuring
  • FIG. 4 shows an embodiment of the solid-state radiation detector according to the invention.
  • FIG. 1 shows a first embodiment of the scintillator element according to the invention.
  • a cylindrical substrate with a thickness of 150 to 500 microns of YSO (yttrium-oxo-orthosilicate - Y 2 SiO 5 ) serves as a support for the thin active layer of LSO (lutetium-oxoorthosilicate - L ⁇ SiO 5 ), which has a thickness of only 1 to 100 ⁇ m. Since the inactive support layer is monocrystalline and the thin active layer is also monocrystalline, it can be grown on the substrate to have the same crystallographic orientation as the support layer.
  • the active layer may be patterned, as shown in FIG. Basically, here the active layer consists of a multiplicity of parallelepiped-shaped columns arranged side by side, since the active layer was structured with a trench system forming a square grid.
  • FIG. X-rays 1 strike the scintillator element 2 according to the invention, where they are exposed to visible or UV light converted, which is then imaged by a commercially available imaging optics 3 via a mirror 4 on a CCD camera 5.
  • YbSO ytterbium oxoorthosilicate - Yb 2 SiO 5
  • YbSO ytterbium oxoorthosilicate - Yb 2 SiO 5

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Luminescent Compositions (AREA)

Abstract

L'invention concerne un élément scintillateur ou encore un détecteur solide qui permette une reproduction avec une très grande résolution locale, qui possède une force d'absorption maximale pour le rayonnement ionisant à déceler et délivre l'énergie absorbée en une impulsion lumineuse la plus courte possible avec un taux de conversion élevé et une rémanence minimale, et qui soit en outre essentiellement transparent pour la longueur d'onde de son émission maximale. A cet effet, selon l'invention, l'élément scintillateur est constitué d'une structure multicouche comportant : une couche support passive en matériau non scintillant ; et une couche active en matériau scintillant, apposée sur la couche support.
PCT/EP2008/064397 2007-11-14 2008-10-23 Élément scintillateur, et détecteur de rayonnement solide pourvu d'un tel élément Ceased WO2009062831A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007054700.7 2007-11-14
DE200710054700 DE102007054700A1 (de) 2007-11-14 2007-11-14 Szintillatorelement sowie Festkörperstrahlungsdetektor mit solchem

Publications (1)

Publication Number Publication Date
WO2009062831A1 true WO2009062831A1 (fr) 2009-05-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/064397 Ceased WO2009062831A1 (fr) 2007-11-14 2008-10-23 Élément scintillateur, et détecteur de rayonnement solide pourvu d'un tel élément

Country Status (2)

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DE (1) DE102007054700A1 (fr)
WO (1) WO2009062831A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103173A (en) * 1975-02-24 1978-07-25 Max Planck Gesellschaft Zur Forderung Der Wissenschaften E. V. Fluorescent screen
EP0655748A1 (fr) * 1993-11-25 1995-05-31 Minnesota Mining And Manufacturing Company Ecrans intensificateurs de rayon-X et méthode pour leur fabrication
US5519227A (en) * 1994-08-08 1996-05-21 The University Of Massachusetts Medical Center Structured scintillation screens
US6288399B1 (en) * 1997-11-12 2001-09-11 Cti Pet Systems, Inc. Depth of interaction detector block for high resolution positron emission tomography

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2237206A1 (en) * 1973-07-13 1975-02-07 Anvar Scintillator crystal for a gamma camera - with multiple crystal prismatic units
US4733088A (en) * 1985-09-02 1988-03-22 Hitachi, Ltd. Radiation detector
US6689293B2 (en) * 2002-05-31 2004-02-10 The Regents Of The University Of California Crystalline rare-earth activated oxyorthosilicate phosphor
JP3867635B2 (ja) * 2002-07-29 2007-01-10 豊田合成株式会社 シンチレータ
DE102005046164A1 (de) * 2005-09-27 2007-03-29 Siemens Ag Röntgendetektor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103173A (en) * 1975-02-24 1978-07-25 Max Planck Gesellschaft Zur Forderung Der Wissenschaften E. V. Fluorescent screen
EP0655748A1 (fr) * 1993-11-25 1995-05-31 Minnesota Mining And Manufacturing Company Ecrans intensificateurs de rayon-X et méthode pour leur fabrication
US5519227A (en) * 1994-08-08 1996-05-21 The University Of Massachusetts Medical Center Structured scintillation screens
US6288399B1 (en) * 1997-11-12 2001-09-11 Cti Pet Systems, Inc. Depth of interaction detector block for high resolution positron emission tomography

Also Published As

Publication number Publication date
DE102007054700A1 (de) 2009-05-20

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