WO2009072631A1 - Procédé de fabrication d'élément semi-conducteur en nitrure, et élément semi-conducteur en nitrure - Google Patents

Procédé de fabrication d'élément semi-conducteur en nitrure, et élément semi-conducteur en nitrure Download PDF

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Publication number
WO2009072631A1
WO2009072631A1 PCT/JP2008/072203 JP2008072203W WO2009072631A1 WO 2009072631 A1 WO2009072631 A1 WO 2009072631A1 JP 2008072203 W JP2008072203 W JP 2008072203W WO 2009072631 A1 WO2009072631 A1 WO 2009072631A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor element
nitride semiconductor
mask
manufacturing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/072203
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English (en)
Japanese (ja)
Inventor
Yukio Shakuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
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Rohm Co Ltd
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Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of WO2009072631A1 publication Critical patent/WO2009072631A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'un élément semi-conducteur en nitrure qui présente des qualités cristallines importantes, dans le cas de la formation de l'élément semi-conducteur en nitrure par développement sélectif à l'aide d'une couche tampon. La présente invention concerne également un élément semi-conducteur en nitrure. Un masque (11) pour le développement sélectif est formé sur un substrat (1) pour le développement, et un motif ayant une forme prescrite est formé sur le masque (11) en retirant une partie du masque. Alors, une couche tampon d'AlN (2) est développée en phase cristalline à une température de 900 °C ou plus. Donc, la couche tampon d'AlN (2) n'est pas formée sur le masque (11) qui reste sur le substrat (1), mais est formée sur une surface exposée du substrat (1).
PCT/JP2008/072203 2007-12-05 2008-12-05 Procédé de fabrication d'élément semi-conducteur en nitrure, et élément semi-conducteur en nitrure Ceased WO2009072631A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-315205 2007-12-05
JP2007315205 2007-12-05

Publications (1)

Publication Number Publication Date
WO2009072631A1 true WO2009072631A1 (fr) 2009-06-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072203 Ceased WO2009072631A1 (fr) 2007-12-05 2008-12-05 Procédé de fabrication d'élément semi-conducteur en nitrure, et élément semi-conducteur en nitrure

Country Status (1)

Country Link
WO (1) WO2009072631A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012111884A1 (fr) * 2011-02-16 2012-08-23 Seoul Opto Device Co., Ltd. Substrat stratifié, et procédé de fabrication associé
WO2014064395A1 (fr) * 2012-10-26 2014-05-01 Aledia Dispositif optoelectronique et son procede de fabrication
WO2014064276A1 (fr) * 2012-10-26 2014-05-01 Aledia Dispositif optoélectronique et son procédé de fabrication
WO2014184487A1 (fr) * 2013-05-14 2014-11-20 Aledia Dispositif optoelectronique et son procede de fabrication
WO2014184486A1 (fr) * 2013-05-14 2014-11-20 Aledia Dispositif optoélectronique et son procédé de fabrication
US9679966B2 (en) 2012-10-26 2017-06-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US9698011B2 (en) 2012-10-26 2017-07-04 Commissariat A L'energie Atomique Et Aux Energies Alternatives Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
JPWO2022210401A1 (fr) * 2021-03-31 2022-10-06

Citations (8)

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Publication number Priority date Publication date Assignee Title
JP2000021789A (ja) * 1997-08-29 2000-01-21 Toshiba Corp 窒化物系半導体素子、発光素子及びその製造方法
JP2001007449A (ja) * 1999-06-25 2001-01-12 Fuji Electric Co Ltd Ｉｉｉ族窒化物半導体薄膜とその製造方法
JP2002164292A (ja) * 2000-11-29 2002-06-07 Sumitomo Chem Co Ltd 化合物半導体基板およびその製造方法
JP2003158296A (ja) * 2001-11-22 2003-05-30 Sharp Corp 窒化物半導体発光デバイスチップとその製造方法
JP2004002081A (ja) * 2002-05-30 2004-01-08 Namiki Precision Jewel Co Ltd パターニングサファイヤ基板
JP2006316308A (ja) * 2005-05-11 2006-11-24 Furukawa Co Ltd Ｉｉｉ族窒化物半導体層の形成方法、ｉｉｉ族窒化物半導体基板の製造方法、ｉｉｉ族窒化物半導体基板
JP2007243006A (ja) * 2006-03-10 2007-09-20 Kyocera Corp 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置
JP2007254258A (ja) * 2005-06-06 2007-10-04 Sumitomo Electric Ind Ltd 窒化物半導体基板とその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021789A (ja) * 1997-08-29 2000-01-21 Toshiba Corp 窒化物系半導体素子、発光素子及びその製造方法
JP2001007449A (ja) * 1999-06-25 2001-01-12 Fuji Electric Co Ltd Ｉｉｉ族窒化物半導体薄膜とその製造方法
JP2002164292A (ja) * 2000-11-29 2002-06-07 Sumitomo Chem Co Ltd 化合物半導体基板およびその製造方法
JP2003158296A (ja) * 2001-11-22 2003-05-30 Sharp Corp 窒化物半導体発光デバイスチップとその製造方法
JP2004002081A (ja) * 2002-05-30 2004-01-08 Namiki Precision Jewel Co Ltd パターニングサファイヤ基板
JP2006316308A (ja) * 2005-05-11 2006-11-24 Furukawa Co Ltd Ｉｉｉ族窒化物半導体層の形成方法、ｉｉｉ族窒化物半導体基板の製造方法、ｉｉｉ族窒化物半導体基板
JP2007254258A (ja) * 2005-06-06 2007-10-04 Sumitomo Electric Ind Ltd 窒化物半導体基板とその製造方法
JP2007243006A (ja) * 2006-03-10 2007-09-20 Kyocera Corp 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8957426B2 (en) 2011-02-16 2015-02-17 Seoul Viosys Co., Ltd. Laminate substrate and method of fabricating the same
KR20120094406A (ko) * 2011-02-16 2012-08-24 서울옵토디바이스주식회사 적층 기판 및 그 제조 방법
JP2012166995A (ja) * 2011-02-16 2012-09-06 Seoul Opto Devices Co Ltd 積層基板及びその製造方法
WO2012111884A1 (fr) * 2011-02-16 2012-08-23 Seoul Opto Device Co., Ltd. Substrat stratifié, et procédé de fabrication associé
KR101909737B1 (ko) * 2011-02-16 2018-10-18 서울바이오시스 주식회사 적층 기판 및 그 제조 방법
US9331242B2 (en) 2012-10-26 2016-05-03 Aledia Optoelectronic device and method for manufacturing same
FR2997552A1 (fr) * 2012-10-26 2014-05-02 Aledia Dispositif optoelectronique et son procede de fabrication
WO2014064276A1 (fr) * 2012-10-26 2014-05-01 Aledia Dispositif optoélectronique et son procédé de fabrication
WO2014064395A1 (fr) * 2012-10-26 2014-05-01 Aledia Dispositif optoelectronique et son procede de fabrication
US9728679B2 (en) 2012-10-26 2017-08-08 Aledia Optoelectronic device and method for manufacturing same
US10636653B2 (en) 2012-10-26 2020-04-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
US9537044B2 (en) 2012-10-26 2017-01-03 Aledia Optoelectric device and method for manufacturing the same
US9991342B2 (en) 2012-10-26 2018-06-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US9679966B2 (en) 2012-10-26 2017-06-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US9698011B2 (en) 2012-10-26 2017-07-04 Commissariat A L'energie Atomique Et Aux Energies Alternatives Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
WO2014184487A1 (fr) * 2013-05-14 2014-11-20 Aledia Dispositif optoelectronique et son procede de fabrication
US9537050B2 (en) 2013-05-14 2017-01-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optoelectronic device and method for manufacturing same
US10050080B2 (en) 2013-05-14 2018-08-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optoelectronic device and method for manufacturing same
FR3005785A1 (fr) * 2013-05-14 2014-11-21 Aledia Dispositif optoelectronique et son procede de fabrication
WO2014184486A1 (fr) * 2013-05-14 2014-11-20 Aledia Dispositif optoélectronique et son procédé de fabrication
JPWO2022210401A1 (fr) * 2021-03-31 2022-10-06
WO2022210401A1 (fr) * 2021-03-31 2022-10-06 株式会社ジャパンディスプレイ Structure stratifiée
JP7624061B2 (ja) 2021-03-31 2025-01-29 株式会社ジャパンディスプレイ 積層構造体
US12610662B2 (en) 2021-03-31 2026-04-21 Japan Display Inc. Laminated structure

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