WO2009090098A2 - Procédé et dispositif de production d'une cellule solaire - Google Patents

Procédé et dispositif de production d'une cellule solaire Download PDF

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Publication number
WO2009090098A2
WO2009090098A2 PCT/EP2009/000279 EP2009000279W WO2009090098A2 WO 2009090098 A2 WO2009090098 A2 WO 2009090098A2 EP 2009000279 W EP2009000279 W EP 2009000279W WO 2009090098 A2 WO2009090098 A2 WO 2009090098A2
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WO
WIPO (PCT)
Prior art keywords
conductor material
silicon substrate
material carrier
carrier
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2009/000279
Other languages
German (de)
English (en)
Other versions
WO2009090098A3 (fr
Inventor
Christian Buchner
Thomas Sauter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schmid Technology GmbH
Original Assignee
Schmid Technology GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Technology GmbH filed Critical Schmid Technology GmbH
Publication of WO2009090098A2 publication Critical patent/WO2009090098A2/fr
Publication of WO2009090098A3 publication Critical patent/WO2009090098A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a method for producing a solar cell with application of electrically conductive conductor material on one side of a silicon substrate for the solar cell. Furthermore, the invention relates to a device suitable for carrying out this method and designed.
  • a solar cell must be electrically contacted.
  • an aluminum paste is applied in the last process step of the production and then a silver paste is applied to the aluminum paste on the rear side, which produces a eutectic with the silicon in the subsequent furnace, which enables electrical contact between solar cell back and aluminum ,
  • This production step is carried out in the current solar cell production by means of a screen printing process.
  • the solar cell is partially covered in a so-called pressure nest by means of a spatula designed according to the required structure. After dispensing the paste, it is then pressed through the sieve onto the solar cell with a spatula, squeegee or squeezee. As a result, mechanical pressure is exerted on the solar cell, which can lead to microcracks.
  • the resolution of this method is limited by the maximum fine mesh of the screen.
  • the invention has for its object to provide a method mentioned above and a device mentioned above, with the NEN problems of the prior art can be solved and in particular conductor material can be applied in desired shapes advantageous and technically reliable on a silicon substrate.
  • a conductor material carrier is guided at a distance from the silicon substrate, that is to say without contact.
  • the conductor material carrier is permeable to light of a certain wavelength. He carries the conductor material on a side facing the silicon substrate.
  • a high-energy beam, preferably a focused laser beam, with this wavelength is coupled into the conductor material carrier, preferably on the side facing away from the silicon substrate to the conductor material in a special form according to the irradiated by the beam points, lines or areas by sudden heating or Dissolve evaporation.
  • the beam thus passes through the conductor material carrier and strikes the layer of the conductor material or is coupled into it.
  • the conductor material detached by the beam is transferred to the surface of the silicon substrate opposite to the carrier or, as it were, flies there and settles in the form in which it has been detached from the conductor material carrier.
  • so to speak contactless conductor material can be brought from a provided therewith carrier on a silicon substrate.
  • a contactless method is of great advantage.
  • by appropriate fine focusing of the beam or the laser beam and a very fine pattern of conductor material can be transmitted without having to take into account mechanical or structural limitations as in a screen printing process.
  • a specific conductor material pattern can be generated and changed in a relatively simple manner, without first having to produce the otherwise necessary screen printing templates in a complex manner.
  • a focused laser beam is used as the beam.
  • any laser with sufficient power generation is suitable for this purpose.
  • essentially only one beam is spoken, by which both should be meant, advantageously of course a laser beam.
  • the laser beam In order to achieve a high nominal throughput during the coating, high deflection or movement speeds are advantageous for the laser beam. As a result, however, a very low energy density is available for the process.
  • the energy in the edge regions of the surface is sufficient only for slight heating of the conductor material, but not for its evaporation, although the amount of energy is large.
  • Beamshaping it is now advantageously possible, the intensity of conventional Gaussian beam profile with respect to the evaporation process. Above all, this makes it possible to achieve an approximately uniform intensity of the laser beam, which is therefore approximately the same in the middle as in the outer regions and thus in each case high enough to detach the conductor material over the entire surface.
  • beamshaping allows to optimize and adapt the pressure wave resulting from the evaporation with respect to drop geometry, drop volume and drop velocity to the application.An essential benefit is the reduction of the achievable structure width with guaranteed detachment of the conductor material in this area.
  • Holographic elements, refractive and reflective optical elements such as mirrors, lenses or prisms are possible technical realizations for the necessary transformation of the intensity profile.
  • the beam is advantageously focused precisely in the plane in which the layer of conductor material is on the conductor material carrier. It is particularly preferred that the beam is focused, as it were, on the contact plane or somewhat deeper, that is to say a small piece into the conductor material. Then, the abrupt heating of the conductor material with associated thermal expansion, which leads to detachment from the conductor material carrier and transfer to the surface of the substrate, can occur particularly well, so that almost all of the conductor material in the illuminated region is also detached and transferred becomes. In this case, the conductor material can be removed either by the thermal expansion and transferred. Alternatively or in addition to this mechanism, an evaporation of the conductor material can take place so that it is detached in the form of vapor or very small droplets and then re-precipitates on the surface of the silicon substrate.
  • the high-energy beam is advantageously generated in a pulse-like manner, for example as so-called laser points. If a number of such points are strung together, a desired pattern of conductor material may be formed in any shape, such as lines or areas, on the surface of the silicon substrate.
  • a pulsed beam it can also be generated or operated continuously for heating and detaching the conductor material from the conductor material carrier and for transferring it to the surface of the silicon substrate.
  • the question of whether a pulse-like generation or a continuous generation is provided may also depend on the type of conductor material or whether it is more suitable for one of the two types of application. Experiments have shown, however, that due to the pulsed high-energy rays, a detachment of the conductor material by the sudden, abrupt warming usually works better.
  • the silicon substrate can be held and the beam to be moved.
  • This has the advantage that by means of appropriate optical deflection means a very fast and at the same time also exact guidance of the beam is possible.
  • the mechanically sensitive silicon substrate generally does not need to be moved and as a rule does not even have to be held fast. In this case, therefore, a radiation source or a laser itself can be fixed and a ray optics, in particular deflection devices such as mirrors or the like. to move off the corresponding pattern to move the generated beam.
  • the beam is always aligned to a same point, while the silicon substrate is moved relative to this point in accordance with desired path.
  • This has the advantage that although a somewhat more expensive guide for the silicon substrate is necessary, but at the same time the beam including the radiation optics can be kept very simple. Also possible are intermediate forms of the two aforementioned embodiments, namely that both the silicon substrate and the beam are moved.
  • the conductor material carrier there is the possibility of moving or not moving the conductor material carrier either relative to the beam and / or the silicon substrate.
  • the conductor material carrier may be moved both relative to the silicon substrate and relative to the beam. It should be ensured that the direction of movement and / or movement speed of the conductor material carrier and the beam are different.
  • the conductor material carrier rotates or rotates and thus appears, for example, as an almost infinitely long conductor material carrier. He can always be repeatedly moved with fresh conductor material between the beam and silicon substrate. The conductor material detached from its side facing the silicon substrate can be reapplied a short distance from the silicon substrate for renewed detachment.
  • an aforementioned circumferential conductor material carrier as a band.
  • the tape may be in an area outside the radiation must always be coated over the entire surface with conductor material. Then, this portion of the tape continues to travel between the beam and the silicon substrate to transfer the conductor material.
  • the band can advantageously form a closed loop.
  • a rotating or rotating conductor material carrier as a hollow body made of light-transmitting material, in particular of solid or rigid material. It is advantageous a cylindrical or circular cylindrical hollow body in the form of a long pipe. Similar to the loop-like band, the hollow body rotates about a longitudinal axis, advantageously about its central longitudinal axis, so that the silicon substrate is always arranged equidistantly thereto.
  • a beam or a laser beam is radiated into the hollow body at an open end, preferably parallel or corresponding to the center longitudinal axis, and then by a deflection device such as a mirror or the like, which is movable at the appropriate point from the inside through the wall of the Hollow body blasted through. This is similar to the circulating band.
  • the conductor material carrier then the conductor material is detached from the carrier and transferred to the substrate.
  • An application of the conductor material on the outside of the hollow body can also be carried out as previously described.
  • the hollow body may advantageously consist of glass, particularly preferably quartz glass. Quartz glass has a very high damage threshold. Damage to the quartz tube due to laser radiation can also be ruled out in the long term.
  • the surface or outer surface of the glass can be specially processed or configured, for example by microstructuring or coating.
  • the application or retention of the conductor material on the outside can be influenced and, above all, improved, as can the detachment.
  • the drop formation behavior can be adapted to the desired conductor material.
  • the pressure wave which is formed when the conductor material evaporates, is focussed and results in a better detachment of the droplets, electrical or magnetic fields can be applied, and thus either the conductor material on the surface can be applied Outside sticks better or can be better peeled off.
  • a glass tube or quartz tube can be produced with excellent surface quality and is resistant to almost all chemicals and high temperatures. This leaves many possibilities in the choice of the conductor material and in the removal of the dried conductor material residues. A glass tube is not deformed during operation. That's why there is no material fatigue. This enables a long-lasting operation and an extremely long service life.
  • the glass tube By placing the glass tube on two rollers as a pivot bearing without further elaborate attachment, the glass tube can be replaced very quickly in service or cleaning.
  • a rotating conductor material carrier can be designed, for example, like a disk, and in particular can be a disk rotating about a central axis. This rotation axis should run outside of the silicon substrate or not therethrough. Again, as described above, it is possible to apply new conductor material to the conductor material carrier away from the silicon substrate and then to move it over the silicon substrate for detachment and transfer.
  • the conductor material carrier can also be provided to form the conductor material carrier larger than the substrate and a fully coated conductor material carrier hold about it. Then, with the high-energy beam, the conductor material can be transferred in the desired form to the substrate. Subsequently, the conductor material carrier is removed, in particular again completely coated with conductor material. A fresh silicon substrate is introduced and then processed either with this, re-coated conductor material carrier or with another, while the previous conductor material carrier is recoated.
  • the method described is suitable both for coating a reverse side and a front side of a silicon substrate for a solar cell in the same manner or providing it with a desired structure of conductor material.
  • the structures on the front and back can be different.
  • the conductive material is thermally solidified after application to the surface of the silicon substrate, preferably after complete coating of an entire side, such solidification should take place between machining the front surface and the back surface. This prevents destruction of the applied structure of the conductor material.
  • the conductor material can be applied to the conductor material carrier in a manner known per se, namely, for example, as a paste. This can be done by rolling or brushing, possibly also by spraying with drying.
  • plastic or glass As a conductor material carrier with appropriate light transmission is offered to plastic or glass.
  • plastic films are clearly preferred.
  • Glass can also be used for rotating or stationary conductor material carriers, in particular those in the form of a hollow body or tube, since this is less sensitive to thermal stresses during irradiation or detachment of the conductor material.
  • the conductor material carrier can be perforated in a development of the invention or sieve-shaped. For example, it is made as a close-meshed mesh made of wire or plastic, with a mesh size of the order of that of screen printing.
  • the surface of the conductor material carrier may be provided with a microstructuring for influencing the adhesion of the conductor material in order to influence the release properties. Additionally or alternatively, it may be provided with an electrically conductive coating, such as a metallization, which should then be translucent, to reduce a stripping energy for the conductor material.
  • it may be easier to detach in droplet form from the conductor material carrier and also the time for the application time can be extended, especially then, a voltage between the conductor substrate and silicon substrate is applied or by applying electrical charge.
  • FIG. 1 shows a side view of a device according to the invention, which shows the functional principle of the detachment of the conductor material from a conductor material carrier and transfer to a silicon substrate,
  • FIG. 2 shows a modification of FIG. 1 with a plurality of juxtaposed lines of detached conductor material
  • FIG. 3 is a side view of the shown in Fig. 1, detached line of conductor material
  • FIG. 4 shows a plan view of a rotating, disk-shaped conductor material carrier with silicon substrate on one side and application roller for conductor material on the other,
  • Fig. 6 shows a rotating conductor material carrier in the form of a hollow glass cylinder in front view
  • FIG. 7 shows the conductor material carrier from FIG. 6 in a side view, including the radiation path.
  • FIG. 1 shows a device 11 as described above.
  • a silicon substrate 13 is introduced with a front side 14 and a rear side 15. From the silicon substrate 13, a solar cell to be produced.
  • the device 11 has a conductor material carrier 18 with an upper side 19 and a lower side 20. It is, as shown in more detail in FIGS. 4 and 5, made of translucent material, in particular transparent, and consists of plastic film or glass. On the underside 20, a layer of conductor material 21 is provided on the conductor material carrier 18, which, for example, may still have a paste-like consistency. The layer thickness is well below one millimeter, especially at a few hundred micrometers. As can be seen, there is a distance between the upper front side 14 of the silicon substrate 13 and the lower side 20 of the conductor material carrier 18 or the conductor material 21, which may be for example in the range of a maximum of a few millimeters.
  • a laser beam 23 is coupled onto the conductor material carrier 18, represented by the thick arrow. He is in about the transition between the conductor material carrier 18 and conductor material 21 and in the Focused in the upper region of the conductor material.
  • the diameter of the laser beam 23 can be in a range of significantly less than one millimeter, in particular even less than one hundred micrometers.
  • the laser beam advantageously has an approximately uniform power distribution over its cross section or the impact surface, ie without any particular differences in performance.
  • Wavelength, energy content and possible pulse duration or focusing of the laser beam 23 can be matched to the type of conductor material 21 as well as to the size or type of the structure 25 of the conductor material on the silicon substrate.
  • the abovementioned apparatus for a "beamshaping" are not shown, but these are feasible for the person skilled in the art based on the above explanations and are advantageously mounted close to the laser which generates the laser beam 23.
  • FIG. 1 shows how, in the case of an electrically conductive coating of the conductor material carrier, a voltage U is applied to the silicon substrate 13. Alternatively, electrical charge could be applied to the conductor material carrier 25. This serves for the above-described reduction of a stripping energy for the conductor material or for improved drop-shaped detachment.
  • FIG. 2 shows in the same device 11 how, advantageously successively, a laser beam 23 transmits conductor material 21 located on the underside 20 of the conductor material carrier 18 to the rear side 15 of the silicon substrate 13 rotated relative to FIG.
  • the load beam 23 can replace five times conductor material 21 from left to right so that five pieces of conductor material 26 are on the rear side 15 of the substrate 13.
  • the illustrated pieces of conductor material 25 and 26 in FIGS. 1 and 2 can, as shown in FIG. 3 in the following, together form a line shape.
  • a plurality of laser spots are closely juxtaposed with a laser beam 23, which then lead to a line-like detachment of conductor material 21 from the conductor material carrier 18 or a resulting line-like gap 27 and for transfer to the silicon substrate 13.
  • far more individual laser points than shown in FIG. 3 are required for this purpose.
  • the distance from juxtaposed grid points with the laser beam 23 to produce a line shape of the conductor material 25 on the silicon substrate 13 is approximately the width of the gap 27 according to FIG. 1.
  • FIG. 4 shows a top view of the device 11, both on the silicon substrate 13 with a line-like piece of conductor material 25 thereon and on the conductor material carrier 18, which is disc-shaped with an axis of rotation 29.
  • the silicon substrate 13 is moved in the transport direction T under the conductor material carrier 18.
  • conductor material 21 which is present on the underside of the conductor material carrier 18 as a full-surface layer, detached and transferred as a line of conductor material 25 on the silicon substrate. This is done, of course, with a possible much more complicated shape than shown in Fig. 4, especially in the rule with multiple lines.
  • the conductor material carrier 18 can already perform a rotation during the processing of a silicon substrate 13.
  • a roller device 31 is provided on the other side of the axis of rotation 29, which applies in a manner known per se fresh conductor material 21 to the underside 20 of the conductor material carrier 18.
  • the roller device 31 is arranged in such a way that it applies fresh conductor material precisely in the area required by the transfer of the conductor material 21 onto the substrate 13. In this case, it should generally be ensured that the conductor material 21 is always present with approximately the same thickness on the conductor support 18, so that a predictable and in each case equal amount of conductor material is always removed by the laser beam 23 and transferred to the silicon substrate. If other layer thicknesses are required on the substrate, however, the conductor material can also be applied thicker onto the conductor material carrier. However, it is not a problem to form the roller device 31 in this way.
  • FIG. 5 an alternative embodiment of a device 11 'is shown, which also operates in accordance with FIGS. 1 to 3. Also here is one Silicon substrate 13 moves according to the transport direction T, wherein it preferably remains unmoved in the transfer of conductive material 25.
  • FIG. 6 shows a device 11 " as a modification of that of Fig. 5.
  • a glass tube 18" is now provided as conductor material carrier.
  • This glass tube 18 rotates about its central longitudinal axis, in a clockwise direction in the end view in accordance with Fig. 6. To this end, it is provided with bearings, not shown, and a rotary drive at its ends 31 " provided, which rests with one of its rollers on the outside of the glass tube 18".
  • conductor material 21 is applied in liquid or pasty form and then distributed from there to the outside of the glass tube 18 ".
  • a mirror 35 " is arranged and movably mounted in the interior of the glass tube 18 " .
  • a laser beam 23 " irradiated from the left into the glass tube 18 " can be deflected downwardly through the glass tube 18 "onto the silicon substrate 13.
  • the function of detaching the conductor material 21 from the glass tube 18" or. its outside and transferring to the surface of the silicon substrate 13 is as previously described.
  • a plurality of silicon substrates may be provided with conductor material simultaneously, for example in succession and / or next to each other.
  • a conductor material carrier reciprocating between two positions can also be provided, that is to say in a type of oscillation movement. It is also conceivable that during the time of removal of the coated silicon substrate and transport of the substrate to be coated, a conductor material carrier is moved to the side and then coated with new conductor material.

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  • Chemical & Material Sciences (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

Procédé de production d'une cellule solaire par application d'un matériau électroconducteur (21, 25) sur un côté (14, 15) d'un substrat en silicium (13), procédé selon lequel un support du matériau conducteur (18) est disposé à distance du substrat en silicium (13). Le support du matériau conducteur (18) est transparent et porte, sur un côté (20) tourné vers le substrat en silicium (13), un matériau conducteur pâteux (21). Un rayon laser focalisé (23) est injecté sur le côté opposé au substrat en silicium (13) en vue de détacher le matériau conducteur (21, 25) sous une forme particulière correspondant aux points ou aux lignes irradiés par le faisceau laser (23). Le matériau conducteur (21, 25) détaché est transféré sur la surface (14, 15) qui lui est opposée, du substrat en silicium (13). Il se forme sur cette surface une structure voulue qui est renforcée par cuisson.
PCT/EP2009/000279 2008-01-17 2009-01-17 Procédé et dispositif de production d'une cellule solaire Ceased WO2009090098A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008005845 2008-01-17
DE102008005845.9 2008-01-17
DE102008057228.4 2008-11-04
DE102008057228A DE102008057228A1 (de) 2008-01-17 2008-11-04 Verfahren und Vorrichtung zur Herstellung einer Solarzelle

Publications (2)

Publication Number Publication Date
WO2009090098A2 true WO2009090098A2 (fr) 2009-07-23
WO2009090098A3 WO2009090098A3 (fr) 2010-03-25

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WO (1) WO2009090098A2 (fr)

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DE102009059042A1 (de) 2009-12-10 2011-06-16 Schmid Technology Gmbh Verfahren und Vorrichtung zur Übertragung von Drucksubstanz von einem Drucksubstanzträger auf ein Substrat
WO2011154747A1 (fr) * 2010-06-11 2011-12-15 Dzp Technologies Limited Procédé et appareil permettant un dépôt
DE102011075025A1 (de) 2011-04-29 2012-10-31 Schmid Technology Gmbh Verfahren und Vorrichtung zum Aufbringen von Drucksubstanz
US9859247B2 (en) 2012-11-09 2018-01-02 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Method for bonding bare chip dies
CN111276566A (zh) * 2020-01-21 2020-06-12 中国海洋大学 基于液相连续旋涂直接相转变法制备的全无机钙钛矿太阳能电池及其制备方法和应用
WO2020152352A1 (fr) * 2019-01-25 2020-07-30 Mycronic AB Transfert vers l'avant induit par laser avec un rendement élevé et un recyclage de matériau donneur sur un tambour transparent
CN116072794A (zh) * 2021-11-02 2023-05-05 重庆康佳光电技术研究院有限公司 显示面板修补方法及系统

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DE102009053776A1 (de) * 2009-11-19 2011-06-01 Systaic Cells Gmbh Emitterbildung mit einem Laser
DE102011103481B4 (de) * 2011-06-03 2017-08-17 Leibniz-Institut für Oberflächenmodifizierung e.V. Selektives Abtragen dünner Schichten mittels gepulster Laserstrahlung zur Dünnschichtstrukturierung
DE102011077462A1 (de) * 2011-06-14 2012-12-20 Robert Bosch Gmbh Verfahren, Anordnung und Prozesshilfsmittel zur Herstellung einer kristallinen Solarzelle
DE102011077450A1 (de) * 2011-06-14 2012-12-20 Robert Bosch Gmbh Verfahren und Anordnung zur Herstellung einer kristallinen Solarzelle
DE102011085714A1 (de) * 2011-11-03 2013-05-08 Boraident Gmbh Verfahren und Vorrichtung zur Erzeugung einer lasergestützten elektrisch leitfähigen Kontaktierung einer Objektoberfläche
CN106687617B (zh) * 2014-07-15 2020-04-07 奈特考尔技术公司 激光转印ibc太阳能电池
DE102017110040B4 (de) * 2017-05-10 2020-08-27 LPKF SolarQuipment GmbH Druckvorrichtung und Druckverfahren zur Übertragung einer Drucksubstanz von einem endlos umlaufenden Drucksubstanzträger auf ein Substrat
EP4617066A1 (fr) * 2024-03-15 2025-09-17 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Dispositif et procédé de dépôt d'un matériau d'impression sur un substrat

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Cited By (10)

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Publication number Priority date Publication date Assignee Title
DE102009059042A1 (de) 2009-12-10 2011-06-16 Schmid Technology Gmbh Verfahren und Vorrichtung zur Übertragung von Drucksubstanz von einem Drucksubstanzträger auf ein Substrat
WO2011070079A1 (fr) 2009-12-10 2011-06-16 Schmid Technology Gmbh Dispositif et procédé de transfert d'une substance d'impression d'un support de substance d'impression sur un substrat
WO2011154747A1 (fr) * 2010-06-11 2011-12-15 Dzp Technologies Limited Procédé et appareil permettant un dépôt
DE102011075025A1 (de) 2011-04-29 2012-10-31 Schmid Technology Gmbh Verfahren und Vorrichtung zum Aufbringen von Drucksubstanz
WO2012146634A1 (fr) 2011-04-29 2012-11-01 Schmid Technology Gmbh Procédé et dispositif d'application d'une substance d'impression
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WO2020152352A1 (fr) * 2019-01-25 2020-07-30 Mycronic AB Transfert vers l'avant induit par laser avec un rendement élevé et un recyclage de matériau donneur sur un tambour transparent
CN111276566A (zh) * 2020-01-21 2020-06-12 中国海洋大学 基于液相连续旋涂直接相转变法制备的全无机钙钛矿太阳能电池及其制备方法和应用
CN111276566B (zh) * 2020-01-21 2022-06-07 中国海洋大学 基于液相连续旋涂直接相转变法制备的全无机钙钛矿太阳能电池及其制备方法和应用
CN116072794A (zh) * 2021-11-02 2023-05-05 重庆康佳光电技术研究院有限公司 显示面板修补方法及系统

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