WO2009109799A2 - Transducteur capacitif monolithique - Google Patents

Transducteur capacitif monolithique Download PDF

Info

Publication number
WO2009109799A2
WO2009109799A2 PCT/IB2008/000601 IB2008000601W WO2009109799A2 WO 2009109799 A2 WO2009109799 A2 WO 2009109799A2 IB 2008000601 W IB2008000601 W IB 2008000601W WO 2009109799 A2 WO2009109799 A2 WO 2009109799A2
Authority
WO
WIPO (PCT)
Prior art keywords
fingers
comb
capacitive transducer
substrate
comb fingers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2008/000601
Other languages
English (en)
Other versions
WO2009109799A3 (fr
Inventor
Tiansheng Zhou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to PCT/IB2008/000601 priority Critical patent/WO2009109799A2/fr
Priority to JP2010549201A priority patent/JP5258908B2/ja
Publication of WO2009109799A2 publication Critical patent/WO2009109799A2/fr
Publication of WO2009109799A3 publication Critical patent/WO2009109799A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/02—Loudspeakers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/16—Mounting or tensioning of diaphragms or cones
    • H04R7/18—Mounting or tensioning of diaphragms or cones at the periphery

Definitions

  • the present patent document relates to a monolithic capacitive transducer, such as a miniature capacitive transducer.
  • Miniature micromachined microphones have gained great popularity in a variety of applications. Because of its sub-mm size, low cost for mass production, lower power consumption, higher sensitivity and reliability, it is widely recognized as the next generation product to replace the conventional electrets condenser microphone (ECM) in applications such as hearing aids, cell phones, PDAs, laptops, MP3, digital cameras etc.
  • ECM electrets condenser microphone
  • the capacitive condenser type of microphone has many advantages over other technical approaches such as piezoelectric or magnetic type micromachined microphone for its smaller size and higher sensitivity etc.
  • the micromachined condenser microphone typically consists of an acoustic pressure sensing element, generally a variable capacitor, and a preamplifier IC circuit.
  • a condenser microphones with a parallel plate capacitor is disclosed in U.S. patent publication no. 2006/0093170 (Zhe et al.) entitled "Backplateless silicon microphone”.
  • the prior art suffers from some or all of shortcomings mentioned below due to the structure and sensing motion of the parallel plate variable capacitor.
  • the "pull-in" effect of the diaphragm reduces the DC bias voltage, which therefore lowers the sensitivity of the microphone.
  • a higher DC bias voltage between diaphragm and backplate yields higher sensitivity.
  • a higher DC bias voltage will create a larger attractive electrostatic force between the diaphragm and backplate.
  • the gap between the diaphragm and backplate is reduced to several microns, and the mechanical compliance of the diaphragm is kept fairly low in order to have some deflection under certain sound pressure level. Larger attractive electrostatic force can overcome the mechanical restoring force of the diaphragm, and can pull the compliant diaphragm over the small gap to touch the backplate. This phenomenon is called the "pull-in" effect.
  • a sub-mm-sized diaphragm that is fully constrained by the surrounding frame reduces the sensitivity of the microphone.
  • the compliance of the diaphragm tends to decease very rapidly with the decreasing size for a given diaphragm material and thickness.
  • the mechanical compliance/stiffness of the diaphragm for the sound pressure scales as the fourth power of the diaphragm size.
  • the parasitic capacitance between the flexible diaphragm and rigid fixed backplate degrades the microphone performance.
  • the capacitance between the diaphragm and backplate has two parts. The first part varies with acoustical signal and is desirable for microphone. The second part is a parasitic capacitance which does not vary with acoustical signal. The parasitic capacitance degrades the performance and should be minimized.
  • the parasitic capacitance is related to the construction of the parallel plate type of silicon microphone in the prior arts.
  • the parallel plate type capacitive condenser microphone is fairly complicated and costly for manufacturing. So far, the prior art has been unable to provide an economic manufacturing method for the mass production of microphones. Some manufacturing methods of sensing elements disclosed in the prior art are not compatible with standard IC CMOS process, resulting in larger hybrid package and higher manufacturing cost.
  • the second set of comb fingers is connected to a second electrical connection that is isolated from the first connection.
  • the first set of comb fingers and the second set of comb finger are interdigitated such that as the body moves, the first set of comb fingers and the second set of comb finger maintain a relative spacing.
  • the first set of comb fingers and the second set of comb fingers define a capacitance. The capacitance is related to the relative position of the first set of comb drive fingers and the second set of comb drive fingers.
  • Fig. 1 is a cross sectional perspective view of the microphone according to a first embodiment
  • Fig. 2 is a cross sectional view showing the structure of the SOI wafer for the transducer according to a first embodiment
  • Fig. 3 is a cross sectional view of the SOI wafer after deposition of layer of oxide on its top and bottom sides according to a first embodiment
  • Fig. 4 is a cross sectional view of the SOI wafer after anisotropic silicon etching of backside cavity and oxide etching from its backside;
  • Fig. 5 is a perspective view of the SOI wafer after patterning and etching the oxide on its front side according to a first embodiment
  • Fig. 6a is a perspective view of the SOI wafer in Fig. 5 after patterning of a layer of photoresist;
  • Fig. 7b is an enlarged perspective view of a portion D of the comb fingers and hinge depicted in Fig. 7a;
  • Fig. 8 is a perspective view of the transducer in Fig. 7 after the first Deep Reactive Ion Etching (DRIE) of silicon;
  • DRIE Deep Reactive Ion Etching
  • Fig. 10a is a perspective view of the transducer in Fig. 9 after the second Deep Reactive Ion Etching (DRIE) of silicon;
  • Fig. 10b is an enlarged perspective view of a portion F of the comb finger and hinge depicted in Fig. 10a;
  • DRIE Deep Reactive Ion Etching
  • Fig. 11 is a perspective view of the transducer in Fig. 10 after removal of oxide on the front side and partial etching of buried oxide layer to release the diaphragm and movable fingers ;
  • Fig. 12 is a cross sectional perspective view of the microphone according to a second embodiment;
  • Fig. 13 is the top view of the microphone depicted in Fig. 1 and Figure 12;
  • Fig. 14 is a cross sectional perspective view of the microspeaker with a larger back cavity and taller comb finger according to a third embodiment
  • Fig. 15 is a cross sectional perspective view of the microspeaker with a larger back cavity and taller comb finger according to a fourth embodiment
  • Fig. 17 is. a cross sectional perspective view of the N type substrate for the transducer according to a sixth embodiment
  • Fig. 18 is a cross sectional perspective view of the N type substrate after P + * implantation/diffusion, or epitaxial growth of layer a silicon with P doping according to a sixth embodiment
  • Fig. 20 is a cross sectional perspective view of the transducer in Fig. 19 after process of silicon Deep Reactive Ion Etching (DRIE) with the self-align process disclosed herein.
  • DRIE Deep Reactive Ion Etching
  • the device described below is a miniature sub-mm-sized capacitive condenser with higher sensitivity, larger dynamic measurement range that overcomes the disadvantages of the parallel plate condenser silicon microphones disclosed in the prior art.
  • the sensing element structure of the microphone reduces or eliminates residual stress effects, stiction, "squeeze film” air damping, and "pull-in”.
  • This kind of transducer may be used in microphones and microspeakers used for hearing aids, cell phones, PDAs, laptops, MP3 players, digital cameras and other applications. It may also be used as an accelerometer, pressure sensors, actuator for a pump, optical switches, and optical interferometers.
  • the design and fabrication method described below can also be used for miniature low voltage electrostatic driven microspeakers, accelerometers, etc.
  • the manufacturing method for the sensing and actuation structure is compatible with standard IC COMS process to form a monolithic integrated miniature silicon capacitive transducer.
  • the vertical combdrive structure that allows sensing or actuation eliminates residual thin film stress on the diaphragm, "pull-in” effects and “squeeze film” air damping of the parallel plate type of capacitive sensing and actuation in the prior art examples.
  • the working capacitance of the device is achieved by the interdigital vertical comb fingers.
  • the vertical comb finger structure avoids the need of the backplate which attributes microfabrication challenges and performance sacrifices.
  • the teachings herein provides design and microfabrication method for both sub-mm-sized silicon capacitive microphone with higher sensitivity, larger dynamic range, a miniature electrostatic driven microspeaker with low power consumption and low driving voltage, and also a miniature capacitive accelerometer etc..
  • the same structure design principle can be used either in the sensing mode which is applicable for a microphone or an accelerometer etc., or in the actuation mode which is applicable for a microspeaker etc.
  • comb fingers 35 and 36 need not be positioned on all sides of the diaphragm 32 as shown.
  • the fingers may be positioned on two parallel edges of the diaphragm 32.
  • the fixed comb finger structures 35 are built around the diaphragm 32 and fixed on the dielectrical material 11 by anchors 38a, 38b, 38c and 38d.
  • any anchor 37a, 37b, 37c, and 37d can be used as an electrical connection point
  • any anchor 38a, 38b, 38c and 38d can be used as the other electrical connection point for an integrated on- chip IC circuit, or for the wire bonding pads if a hybrid package is required for the transducer.
  • the exterior peripheral edge of the diaphragm 32 overlaps the interior peripheral edge of the cavity 40.
  • this overlap of the diaphragm 32 and the carrier wafer 12 is required to create a long air flow path 33 between the diagram 32 with movable fingers 36 and carrier wafer 12 to reduce leakage around the diaphragm 32.
  • Another method of reducing leakage is to coat the diaphragm 32 on the cavity side 40 with a light weight material, such as a polymer (not shown) to reduce the gap between the diagram 32 with movable fingers 36 and carrier wafer 12. This may be done, for example, by sputtering or other deposition techniques. During deposition, the material may also be deposited on the sides of the cavity. However, this is not undesirable, as it would also reduce the gap.
  • the capacitance increases with the number of comb fingers.
  • pressure waves such as acoustic pressure, or accelerations/decelerations
  • the diaphragm 32 will move up and down in a piston style movement.
  • the serpentine design of the springs 29a, 29b, 29c, and 29d helps establish a substantially linear movement throughout. The movement of the diaphragm 32 can be detected by monitoring the capacitance changes between the movable fingers 36 and fixed comb fingers 35.
  • the capacitance changes between the movable fingers 36 and the fixed carrier wafer 12 may also be measured, which for example increases the sensitivity of the sensor by taking a differential measurement of the changes in capacitance.
  • the capacitance change is more sensitive to acoustic pressure 34 or accelerations/decelerations due to the fringe effects of the small comb fingers, which also results in higher sensitivity of the transducer.
  • the flexible hinges helps maintain the piston movement of the diaphragm 32 instead of the parabolic deformation of the diaphragm in the prior art.
  • the etching cavities 20a, 20b, 20c and 2Od on the diaphragm 32 are to reduce the mass the diaphragm 32 for better high frequency response.
  • the transducer requires no backplate, since its diaphragm 32 is suspended on the cavity 40 of the carrier wafer 12. A barometric relief is not needed for the microphone.
  • Fig. 14, 15 and 16 show a device that is designed to be used in the actuation mode, such as for a microspeaker. Similar reference numbers are used to the embodiment described above.
  • a silicon capacitive transducer (microspeaker) comprises a diaphragm 32 supported by four hinges 29a, 29b, 29c and 29d.
  • the diaphragm 32 is made of the bulk conductive silicon connected to the fixed anchors by serpentine shaped silicon hinges 29a, 29b, 29c and 29d.
  • the four hinges are connected to the anchor 37a, 37b, 37c and 37d which are sitting on the dielectrical material 1 1.
  • the actuation element is the vertical combdrive structure and includes movable comb fingers 36 and fixed comb fingers 35.
  • the movable comb fingers 36 are formed on the outside edge of the diaphragm 32.
  • the fixed comb finger structures 35 are built around the diaphragm 32 and fixed on the dielectrical material 11 by anchor 38a, 38b, 38c and 38d.
  • the diaphragm 32, hinges 29a, 29b, 29c and 29d, anchors 37a, 37b, 37c, 37d, 38a, 38b, 38c and 38d, vertical comb fingers 35 and 36 and electrical interconnection structure 39a, 39b and 39c are made of the same layer of electrical conductive silicon 10 which is on the top of dielectrical material 11.
  • the electrical interconnection structure 39a, 39b and 39c electrically connects all four fixed comb finger structures 35 around the diaphragm 32.
  • Anchor 37 and 38 can be used as the electrical connection points for the integrated on-chip IC circuit, or for the bonding pads if a hybrid package is required for the transducer.
  • sufficient number of movable comb fingers 36 can be formed on its edge to achieve working capacitance of Pico Farads which is equivalent to the capacitance offered by parallel plate structure in the prior arts.
  • the flexible hinges 29a, 29b, 29c and 29d will maintain the piston movement of the diaphragm 32 instead of the parabolic deformation which is common to many prior art devices.
  • the etching cavities 20a, 20b, 20c and 2Od on the diaphragm 32 are to reduce the mass the diaphragm for better high frequency response.
  • the transducer has no backplate since its diaphragm 32 is suspended on the cavity 40 of the carrier wafer 12.
  • the general steps to manufacture the capacitive transducer include first, applying a first etching mask on a layer that is mounted on a substrate to define the position of one of a movable set of fingers and a fixed set of fingers. The position of the body and the springs may also be defined by the first mask.
  • a second etching mask is applied to define the movable set of fingers, the fixed set of fingers, a body, and springs, the body being connected to the movable set of fingers and the springs, the movable set of fingers being interdigitated with the fixed set of fingers.
  • the second etching mask is then used to etch the layer and the first etching mask.
  • the second etching mask is removed, and the layer is then etched using the first etching mask, such that one of the movable set of fingers and the fixed set of fingers is shorter than the other of the movable set of fingers and the fixed set of fingers.
  • the body, the springs, and the movable set of fingers are then released using etching, such that, upon applying a force to the body, the body moves parallel to the substrate.
  • Fig. 3 shows the SOI wafer after growing a layer of oxide 13 and 16 on its top and bottom sides.
  • the thermal oxidation process can be used for oxide growth.
  • Fig.4 shows the substrate after being subjected to a silicon anisotropic etch in KOH (Potassium hydroxide) or TMAH (Tetramethylammonium hydroxide) and, subsequent oxide etching in a buffered HF(Hydro fluoric acid) solution with the top side of the SOI wafer protected.
  • the cavity 14 is formed on the oxide layer 11 and a cavity 40 on the carrier silicon wafer 12.
  • the cavity 40 can be also etched using any other anisotropic etching methods such as Silicon Deep Reactive Ion Etching (DRIE).
  • DRIE Silicon Deep Reactive Ion Etching
  • Fig. 5 shows the patterning of the oxide layer on the top side of a SOI wafer.
  • the oxide pattering is done using regular lithography and oxide etching process such as RIE (Reactive oin Etch).
  • the oxide 22 on the movable fingers is patterned.
  • Areas 17a, 17b, 17c, 17 d, 18a, 18b, 18c, and 18d are pattered for the anchors 37 and 38.
  • Areas 21a, 21b and 21c are patterned for the electrical interconnection structure 39.
  • Areas 201a, 201b, 201c and 20 Id are oxide free for formation silicon cavities 20 on the diaphragm 32.
  • Fig. 6a shows the SOI wafer depicted in Fig. 5 after photoresist patterning.
  • This lithography step defines the shape of movable fingers and hinges, and redefines the oxide pattern depicted in Fig. 5.
  • the geometry sizes of oxide patterning in Fig. 5 are larger than the desired device feature sizes.
  • An enlarged perspective view of a portion C of the comb fingers 25 and 27 and hinge 26 depicted in Fig. 6a is shown in Fig. 6b.
  • the final shapes of the movable comb fingers 36, fixed comb fingers 35, diaphragm 32 and hinges 29a, 29b, 29c, and 29d are defied precisely by photoresist 25, 27, 23 and 26 respectively.
  • Fig. 7 shows the SOI wafer in Fig. 6 after oxide RIE etch process.
  • An enlarged perspective view of a portion D of the comb fingers 25 and 27 and hinge 26 depicted in Fig. 7a is shown in Fig. 7b.
  • the patterned photoresist layer is used as etching mask material for the first silicon
  • the oxide layer 11 is used as the etching stop layer for the first silicon DRIE.
  • Fig. 8 shows the substrate after the first silicon DRIE.
  • Fig. 9b shows an enlarged perspective view of a portion E of the comb fingers 28 and 30 and hinge 29a depicted in Fig. 9a.
  • the hinge 29a and fixed comb finger 28 have no oxide on their tops while the movable finger 30 and diaphragm 32 have oxide on their tops for the subsequent second silicon DRIE etching.
  • the second silicon DRIE etching forms the lower fixed comb fingers, flexible hinges 29a, 29b, 29c and 29d and cavities 20.
  • Fig.10b shows an enlarged perspective view of a portion F of the comb fingers 28 and 30 and a hinge 29a depicted in Fig. 10a.
  • an air gap 41 between comb fingers 35 and 36 and an air gap 42 between hinges 29a, 29b, 29c, and 29d and comb fingers 36 of around 2 ⁇ m provides sufficient resistance for a low frequency response of the transducer. If 2 ⁇ m is achievable for air gaps 41 and 42 with the current microfabrication technology, then the long air flow path 33 shown in between diaphragm 32 and the carrier wafer 12 becomes unnecessary.
  • a larger translation of the diaphragm 32 during actuation is preferable to create a higher sound wave pressure level from the miniature silicon microspeaker.
  • a thicker silicon layer 10 as shown in Fig. 14 should be used to make the larger height difference between the fixed fingers 35 and movable fingers 36. In doing so, a larger electrostatic force and a correspongingly larger actuated translation movement between the fixed and movable fingers 35 and 36 can be expected.
  • a larger silicon cavity 40 should also be formed in the carrier wafer 12 so that the diaphragm 32 can obtain a larger up and down translational movement without any mechanical obstruction.
  • the miniature microspeaker embodiment is depicted in the Fig. 14.
  • silicon microspeaker offers less power consumption due to electrostatic actuation.
  • the driving voltage for the silicon microspeaker can be further lowered by reducing the overlapping region between fixed and movable comb fingers, such that they are offset. The reason for this is that the electrical field in the overlapping region between fixed and movable comb fingers 35 and 36 will prevent the constructive movement of the diaphragm 32.
  • One way to reduce the overlapping region between fixed and movable comb fingers 35 and 36 is to etch away the lower part of the fixed comb fingers 35 during the fabrication of the engineered SOI wafer. For example, the device layer may be pre etched before it is bonded with a carrier silicon wafer. Fig.
  • FIG. 15 and 16 depict embodiments where the lower portion of either fixed comb finger 35 or movable finger 36 is etched away.
  • FIG. 20 Another alternative embodiment is shown in Fig. 20, and formed of an N type substrate with P type structures.
  • a regular N type silicon wafer 18 in Fig. 17 is the starting material for the transducer.
  • a layer of P ++ silicon 49 is formed on top of N type silicon 48 by either epitaxial growth or doping/diffusion or implantation/diffusion as shown in Fig. 18.
  • P ++ silicon 49 is used for building the transducer. Referring to Fig. 19, the P + * silicon 49 is used as silicon etch stop layer to form diaphragm 50 using silicon anisotropic etching in either KOH or TMAH, which will etch the N type substrate 18, but not the P++ silicon 49.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention porte sur un transducteur capacitif qui inclut un substrat présentant une première surface et une seconde surface. La première surface du substrat définit un premier plan. Le substrat possède une cavité avec une bordure périphérique intérieure. La cavité s'étend entre la première surface et la seconde surface. Il est disposé un corps qui possède une bordure périphérique extérieure. Le corps est parallèle au premier plan et bloque au moins partiellement la cavité. Le corps est relié au substrat par des articulations élastiques de telle sorte que, lors de l'application d'une force, le corps se déplace perpendiculairement au premier plan. Un premier ensemble de dents de peigne est monté sur le substrat. Le premier ensemble de dents de peigne est relié à une première connexion électrique. Un second ensemble de dents de peigne est monté sur le corps et s'étend au-delà de la bordure périphérique extérieure du corps. Le second ensemble de dents de peigne est relié à une seconde connexion électrique qui est isolée de la première connexion. Le premier ensemble de dents de peigne et le second ensemble de dents de peigne s'interdigitent de telle sorte que, à mesure que le corps se déplace, le premier ensemble de dents de peigne et le second ensemble de dents de peigne maintiennent un espacement relatif. Le premier ensemble de dents de peigne et le second ensemble de dents de peigne définissent une capacité. La capacité est apparentée à la position relative du premier ensemble de dents de peigne d'entraînement et du second ensemble de dents de peigne d'entraînement.
PCT/IB2008/000601 2008-03-03 2008-03-03 Transducteur capacitif monolithique Ceased WO2009109799A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/IB2008/000601 WO2009109799A2 (fr) 2008-03-03 2008-03-03 Transducteur capacitif monolithique
JP2010549201A JP5258908B2 (ja) 2008-03-03 2008-03-03 モノリシック静電容量トランスデューサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2008/000601 WO2009109799A2 (fr) 2008-03-03 2008-03-03 Transducteur capacitif monolithique

Publications (2)

Publication Number Publication Date
WO2009109799A2 true WO2009109799A2 (fr) 2009-09-11
WO2009109799A3 WO2009109799A3 (fr) 2009-10-29

Family

ID=41056405

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2008/000601 Ceased WO2009109799A2 (fr) 2008-03-03 2008-03-03 Transducteur capacitif monolithique

Country Status (2)

Country Link
JP (1) JP5258908B2 (fr)
WO (1) WO2009109799A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124771A (ja) * 2009-12-10 2011-06-23 Aoi Electronics Co Ltd マイクロフォン
CN103922271A (zh) * 2013-01-16 2014-07-16 英飞凌科技股份有限公司 梳状mems器件和制作梳状mems器件的方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101531100B1 (ko) * 2013-09-30 2015-06-23 삼성전기주식회사 마이크로폰
US10171917B2 (en) * 2016-12-29 2019-01-01 GMEMS Technologies International Limited Lateral mode capacitive microphone
US11697582B2 (en) * 2021-06-14 2023-07-11 Soundskrit Inc. MEMS transducer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4174351B2 (ja) * 2002-03-15 2008-10-29 株式会社豊田中央研究所 可動電極を有する装置、可動ミラー装置、振動型ジャイロスコープ及びこれらの製造方法
US6829814B1 (en) * 2002-08-29 2004-12-14 Delphi Technologies, Inc. Process of making an all-silicon microphone
JP4085854B2 (ja) * 2003-03-20 2008-05-14 株式会社デンソー 半導体力学量センサの製造方法
US7114397B2 (en) * 2004-03-12 2006-10-03 General Electric Company Microelectromechanical system pressure sensor and method for making and using
JP4591000B2 (ja) * 2004-09-16 2010-12-01 株式会社デンソー 半導体力学量センサおよびその製造方法
US7825484B2 (en) * 2005-04-25 2010-11-02 Analog Devices, Inc. Micromachined microphone and multisensor and method for producing same
JP2007210083A (ja) * 2006-02-13 2007-08-23 Hitachi Ltd Ｍｅｍｓ素子及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124771A (ja) * 2009-12-10 2011-06-23 Aoi Electronics Co Ltd マイクロフォン
CN103922271A (zh) * 2013-01-16 2014-07-16 英飞凌科技股份有限公司 梳状mems器件和制作梳状mems器件的方法

Also Published As

Publication number Publication date
WO2009109799A3 (fr) 2009-10-29
JP5258908B2 (ja) 2013-08-07
JP2011514088A (ja) 2011-04-28

Similar Documents

Publication Publication Date Title
US8389349B2 (en) Method of manufacturing a capacitive transducer
CN110012411B (zh) 用于制造声换能器的方法
US9516421B1 (en) Acoustic sensing apparatus and method of manufacturing the same
US8847289B2 (en) CMOS compatible MEMS microphone and method for manufacturing the same
CN104333838B (zh) 微机电系统器件
US8436435B2 (en) MEMS capacitive microphone
WO2006046926A2 (fr) Microphone a base de silicium comportant un diaphragme moderement contraint
TW201808783A (zh) Ｍｅｍｓ裝置與製程
WO2009109799A2 (fr) Transducteur capacitif monolithique
CN117294998A (zh) 微机电声压产生装置和微机电扬声器系统
US20070140514A1 (en) Electrostatic acoustic transducer based on rolling contact micro actuator
CN112897448B (zh) Mems传感器及其微机电结构、微机电结构的制造方法
US12185061B2 (en) Integrated MEMS micro-speaker device and method
US20240223967A1 (en) Electromechanical system comprising capacitive measurement or actuation means
JP5649636B2 (ja) 静電容量トランスデューサの製造方法
US20190062146A1 (en) Mems devices and processes
US12069455B2 (en) Process of fabricating lateral mode capacitive microphone including a capacitor plate with sandwich structure
CN111263282A (zh) 电容式传声器及其制作方法
US12139394B2 (en) Multiple layer electrode transducers
CN114390418A (zh) 微机电系统电极形成方法
Cerini et al. High-Performance Piezoelectric MEMS Speakers for in-ear Applications
US20250296832A1 (en) Electrostatic MEMS Transducer with Vertical Actuator Cells
US12075223B2 (en) Process of fabricating capacitive microphone comprising movable composite conductor and stationary single conductor
US12075222B2 (en) Process of fabricating capacitive microphone comprising moveable single conductor and stationary composite conductor
WO2025101777A1 (fr) Procédé compatible avec les fonderies pour un dispositif audio mems

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08719302

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2010549201

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08719302

Country of ref document: EP

Kind code of ref document: A2