WO2009132833A3 - Led-modul mit kalottenförmiger farbkonversionsschicht - Google Patents

Led-modul mit kalottenförmiger farbkonversionsschicht Download PDF

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Publication number
WO2009132833A3
WO2009132833A3 PCT/EP2009/003103 EP2009003103W WO2009132833A3 WO 2009132833 A3 WO2009132833 A3 WO 2009132833A3 EP 2009003103 W EP2009003103 W EP 2009003103W WO 2009132833 A3 WO2009132833 A3 WO 2009132833A3
Authority
WO
WIPO (PCT)
Prior art keywords
dome
led chip
led module
reflecting wall
conversion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2009/003103
Other languages
English (en)
French (fr)
Other versions
WO2009132833A2 (de
Inventor
Wolfgang Oberleitner
Krisztian Sasdi
Erwin Baumgartner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ledon Lighting Jennersdorf GmbH
Lumitech Produktion und Entwicklung GmbH
Original Assignee
Ledon Lighting Jennersdorf GmbH
Lumitech Produktion und Entwicklung GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ledon Lighting Jennersdorf GmbH, Lumitech Produktion und Entwicklung GmbH filed Critical Ledon Lighting Jennersdorf GmbH
Priority to CN2009801213074A priority Critical patent/CN102057508B/zh
Priority to US12/990,457 priority patent/US8502251B2/en
Priority to EP09737877A priority patent/EP2269237A2/de
Publication of WO2009132833A2 publication Critical patent/WO2009132833A2/de
Publication of WO2009132833A3 publication Critical patent/WO2009132833A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/853Encapsulations characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8514Wavelength conversion means characterised by their shape, e.g. plate or foil
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • H10W72/01515Forming coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Led Device Packages (AREA)
  • Optical Measuring Cells (AREA)

Abstract

Ein LED-Modul weist mindestens einen LED-Chip (4), der monochromatisches Licht eines ersten Spektrums aussendet, eine Plattform (2), auf die der LED-Chip aufgebracht ist, eine separat oder integriert mit der Plattform ausgebildete, den LED-Chip allseits umgebende reflektierende Wand (9), und eine über dem LED-Chip aufgebrachte Dispensschicht (11) auf. Die Dispensschicht erstreckt sich dabei kalottenförmig über die reflektierende Wand hinaus, derart, dass die folgende Gleichung erfüllt ist: 0,1*b 1 ≤ h 1 ≤ 0,5*b 1 wobei: h 1 die Überhöhung der kalottenförmigen Dispensschicht, gemessen von dem obersten Punkt der reflektierenden Wand bis zum Scheitel der Kalotte, und b 1 der Durchmesser der durch die reflektierende Wand gebildeten Vertiefung, gemessen als Abstand der Mittenachse der Wand, ist.
PCT/EP2009/003103 2008-04-30 2009-04-29 Led-modul mit kalottenförmiger farbkonversionsschicht Ceased WO2009132833A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2009801213074A CN102057508B (zh) 2008-04-30 2009-04-29 带有球冠状颜色转换层的发光二极管模块
US12/990,457 US8502251B2 (en) 2008-04-30 2009-04-29 LED module comprising a dome-shaped color conversion layer
EP09737877A EP2269237A2 (de) 2008-04-30 2009-04-29 Led-modul mit kalottenförmiger farbkonversionsschicht

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE202008005987U DE202008005987U1 (de) 2008-04-30 2008-04-30 LED-Modul mit kalottenförmiger Farbkonversionsschicht
DE202008005987.9 2008-04-30

Publications (2)

Publication Number Publication Date
WO2009132833A2 WO2009132833A2 (de) 2009-11-05
WO2009132833A3 true WO2009132833A3 (de) 2010-01-28

Family

ID=40908541

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/003103 Ceased WO2009132833A2 (de) 2008-04-30 2009-04-29 Led-modul mit kalottenförmiger farbkonversionsschicht

Country Status (5)

Country Link
US (1) US8502251B2 (de)
EP (1) EP2269237A2 (de)
CN (1) CN102057508B (de)
DE (1) DE202008005987U1 (de)
WO (1) WO2009132833A2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
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KR101114150B1 (ko) * 2009-10-19 2012-03-09 엘지이노텍 주식회사 발광 소자
DE102010028246A1 (de) * 2010-04-27 2011-10-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102010023955A1 (de) * 2010-06-16 2011-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
JP2012039031A (ja) * 2010-08-11 2012-02-23 Nitto Denko Corp 発光装置
US9373606B2 (en) * 2010-08-30 2016-06-21 Bridgelux, Inc. Light-emitting device array with individual cells
CN102109116B (zh) * 2010-12-27 2016-06-22 秦彪 Led光模组和led芯片
KR101181224B1 (ko) * 2011-03-29 2012-09-10 성균관대학교산학협력단 Led 패키지 및 그 제조방법
US20130175516A1 (en) * 2011-09-02 2013-07-11 The Procter & Gamble Company Light emitting apparatus
JP6318495B2 (ja) * 2013-08-07 2018-05-09 日亜化学工業株式会社 発光装置
US9640709B2 (en) * 2013-09-10 2017-05-02 Heptagon Micro Optics Pte. Ltd. Compact opto-electronic modules and fabrication methods for such modules
US10032969B2 (en) 2014-12-26 2018-07-24 Nichia Corporation Light emitting device
US9966514B2 (en) * 2015-07-02 2018-05-08 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light emitting diode package structure and fabrication method
WO2019051780A1 (zh) * 2017-09-15 2019-03-21 厦门市三安光电科技有限公司 一种白光led封装结构以及白光源系统
CN109962080A (zh) * 2017-12-22 2019-07-02 财团法人工业技术研究院 显示装置
WO2019233724A1 (en) * 2018-06-06 2019-12-12 Lumileds Holding B.V. Light emitting module and its producing method
CN109817797A (zh) * 2019-01-23 2019-05-28 佛山市国星光电股份有限公司 Led器件和灯组阵列
US12328977B2 (en) * 2021-06-02 2025-06-10 Lumens Co., Ltd. Light emitting device pakage
US12197081B1 (en) * 2023-10-04 2025-01-14 Himax Display, Inc. Light-emitting module and front-lit liquid-crystal-on-silicon module

Citations (6)

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Publication number Priority date Publication date Assignee Title
JPH05291629A (ja) * 1992-02-10 1993-11-05 Toshiba Corp 発光表示装置及びその製造方法
JPH07211943A (ja) * 1994-01-25 1995-08-11 Nikon Corp 光源装置
US20030053310A1 (en) * 2001-09-17 2003-03-20 Matthew Sommers Variable optics spot module
US20040041222A1 (en) * 2002-09-04 2004-03-04 Loh Ban P. Power surface mount light emitting die package
EP1786045A2 (de) * 2005-11-15 2007-05-16 Samsung Electro-Mechanics Co., Ltd. LED-Gehäuse
US20070114558A1 (en) * 2005-11-23 2007-05-24 Taiwan Oasis Technology Co., Ltd. LED module

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DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
DE19921684B4 (de) * 1999-05-12 2006-01-19 Vossloh-Schwabe Optoelectronic Gmbh & Co. Kg Beleuchtungselement mit Halbleiterchips
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Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05291629A (ja) * 1992-02-10 1993-11-05 Toshiba Corp 発光表示装置及びその製造方法
JPH07211943A (ja) * 1994-01-25 1995-08-11 Nikon Corp 光源装置
US20030053310A1 (en) * 2001-09-17 2003-03-20 Matthew Sommers Variable optics spot module
US20040041222A1 (en) * 2002-09-04 2004-03-04 Loh Ban P. Power surface mount light emitting die package
EP1786045A2 (de) * 2005-11-15 2007-05-16 Samsung Electro-Mechanics Co., Ltd. LED-Gehäuse
US20070114558A1 (en) * 2005-11-23 2007-05-24 Taiwan Oasis Technology Co., Ltd. LED module

Also Published As

Publication number Publication date
WO2009132833A2 (de) 2009-11-05
US8502251B2 (en) 2013-08-06
CN102057508B (zh) 2012-08-22
DE202008005987U1 (de) 2009-09-03
US20110057226A1 (en) 2011-03-10
EP2269237A2 (de) 2011-01-05
CN102057508A (zh) 2011-05-11

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