WO2009140371A3 - Procédé et appareil de traitement au plasma pulsé faisant appel à un mécanisme de syntonisation à résolution temporelle pour la fourniture d'énergie rf - Google Patents

Procédé et appareil de traitement au plasma pulsé faisant appel à un mécanisme de syntonisation à résolution temporelle pour la fourniture d'énergie rf Download PDF

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Publication number
WO2009140371A3
WO2009140371A3 PCT/US2009/043771 US2009043771W WO2009140371A3 WO 2009140371 A3 WO2009140371 A3 WO 2009140371A3 US 2009043771 W US2009043771 W US 2009043771W WO 2009140371 A3 WO2009140371 A3 WO 2009140371A3
Authority
WO
WIPO (PCT)
Prior art keywords
power supply
plasma processing
pulsed plasma
power delivery
time resolved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/043771
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English (en)
Other versions
WO2009140371A2 (fr
Inventor
Samer Banna
Valentin Todorow
Kartik Ramaswamy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to KR1020157002580A priority Critical patent/KR20150017389A/ko
Priority to CN200980117820.6A priority patent/CN102027810B/zh
Priority to KR1020107028091A priority patent/KR101528528B1/ko
Priority to JP2011509647A priority patent/JP2011525682A/ja
Publication of WO2009140371A2 publication Critical patent/WO2009140371A2/fr
Publication of WO2009140371A3 publication Critical patent/WO2009140371A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146Amplitude modulation, includes pulsing
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Des modes de réalisation de l'invention concernent généralement des procédés et un appareil qui permettent de réaliser un traitement au plasma pulsé sur une large fenêtre de traitement. Dans certains modes de réalisation, l'appareil selon l'invention peut comprendre : une alimentation en énergie RF à syntonisation de fréquence; et un réseau d'accord couplé à l'alimentation en énergie RF, qui partagent un capteur commun permettant de lire l'énergie RF réfléchie qui est renvoyée vers l'alimentation en énergie RF. Dans certains modes de réalisation, l'appareil peut comprendre : une alimentation en énergie RF à syntonisation de fréquence; et un réseau d'accord couplé à l'alimentation en énergie RF, qui partagent un capteur commun permettant de lire l'énergie RF réfléchie qui est renvoyée vers l'alimentation en énergie RF, et un contrôleur commun permettant de syntoniser tant l'alimentation en énergie RF que le réseau d'accord.
PCT/US2009/043771 2008-05-14 2009-05-13 Procédé et appareil de traitement au plasma pulsé faisant appel à un mécanisme de syntonisation à résolution temporelle pour la fourniture d'énergie rf Ceased WO2009140371A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020157002580A KR20150017389A (ko) 2008-05-14 2009-05-13 Rf 전력 전달을 위한 시간 분해된 조정 방식을 이용하는 펄스화된 플라즈마 처리를 위한 방법 및 장치
CN200980117820.6A CN102027810B (zh) 2008-05-14 2009-05-13 使用rf功率传递的时间分解调频方案以用于脉冲等离子体工艺的方法及设备
KR1020107028091A KR101528528B1 (ko) 2008-05-14 2009-05-13 Rf 전력 전달을 위한 시간 분해된 조정 방식을 이용하는 펄스화된 플라즈마 처리를 위한 방법 및 장치
JP2011509647A JP2011525682A (ja) 2008-05-14 2009-05-13 Rf電力供給のための時間分解チューニングスキームを利用したパルス化プラズマ処理の方法及び装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12763408P 2008-05-14 2008-05-14
US61/127,634 2008-05-14

Publications (2)

Publication Number Publication Date
WO2009140371A2 WO2009140371A2 (fr) 2009-11-19
WO2009140371A3 true WO2009140371A3 (fr) 2010-04-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/043771 Ceased WO2009140371A2 (fr) 2008-05-14 2009-05-13 Procédé et appareil de traitement au plasma pulsé faisant appel à un mécanisme de syntonisation à résolution temporelle pour la fourniture d'énergie rf

Country Status (6)

Country Link
US (1) US8264154B2 (fr)
JP (2) JP2011525682A (fr)
KR (2) KR101528528B1 (fr)
CN (1) CN102027810B (fr)
TW (2) TWI519211B (fr)
WO (1) WO2009140371A2 (fr)

Families Citing this family (511)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
WO2009146439A1 (fr) * 2008-05-30 2009-12-03 Colorado State University Research Foundation Système, procédé et dispositif de formation de plasma
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9378930B2 (en) * 2009-03-05 2016-06-28 Applied Materials, Inc. Inductively coupled plasma reactor having RF phase control and methods of use thereof
US20100276391A1 (en) * 2009-03-05 2010-11-04 Applied Materials, Inc. Inductively coupled plasma reactor having rf phase control and methods of use thereof
JP2010238881A (ja) * 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US20110097901A1 (en) * 2009-10-26 2011-04-28 Applied Materials, Inc. Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
US20110094683A1 (en) * 2009-10-26 2011-04-28 Applied Materials, Inc. Rf feed structure for plasma processing
US20110094994A1 (en) * 2009-10-26 2011-04-28 Applied Materials, Inc. Inductively coupled plasma apparatus
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
JP5546921B2 (ja) * 2010-03-26 2014-07-09 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US9117767B2 (en) * 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
JP5172928B2 (ja) * 2010-09-30 2013-03-27 株式会社東芝 基板処理方法および基板処理装置
WO2012094416A1 (fr) 2011-01-04 2012-07-12 Advanced Energy Industries, Inc. Fourniture de puissance au niveau système à une charge de traitement de plasma
US8333166B2 (en) * 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US8692467B2 (en) * 2011-07-06 2014-04-08 Lam Research Corporation Synchronized and shortened master-slave RF pulsing in a plasma processing chamber
US9059101B2 (en) * 2011-07-07 2015-06-16 Lam Research Corporation Radiofrequency adjustment for instability management in semiconductor processing
US8828259B2 (en) * 2011-07-07 2014-09-09 Lam Research Corporation Methods for automatically determining capacitor values and systems thereof
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US8933628B2 (en) * 2011-10-28 2015-01-13 Applied Materials, Inc. Inductively coupled plasma source with phase control
US8974684B2 (en) * 2011-10-28 2015-03-10 Applied Materials, Inc. Synchronous embedded radio frequency pulsing for plasma etching
US10271416B2 (en) 2011-10-28 2019-04-23 Applied Materials, Inc. High efficiency triple-coil inductively coupled plasma source with phase control
JP5977509B2 (ja) * 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5867701B2 (ja) 2011-12-15 2016-02-24 東京エレクトロン株式会社 プラズマ処理装置
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9368329B2 (en) * 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9502216B2 (en) * 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US10157729B2 (en) * 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9197196B2 (en) * 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
KR101303040B1 (ko) * 2012-02-28 2013-09-03 주식회사 뉴파워 프라즈마 플라즈마 챔버의 아크 검출 방법 및 장치
CN103327723A (zh) * 2012-03-23 2013-09-25 中微半导体设备(上海)有限公司 一种电容耦合等离子反应器及其控制方法
JP5822795B2 (ja) 2012-07-17 2015-11-24 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5841917B2 (ja) 2012-08-24 2016-01-13 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US8742668B2 (en) * 2012-09-05 2014-06-03 Asm Ip Holdings B.V. Method for stabilizing plasma ignition
US9408288B2 (en) * 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
TWI599272B (zh) * 2012-09-14 2017-09-11 蘭姆研究公司 根據三個或更多狀態之功率及頻率調整
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
CN103730316B (zh) 2012-10-16 2016-04-06 中微半导体设备(上海)有限公司 一种等离子处理方法及等离子处理装置
US9620334B2 (en) * 2012-12-17 2017-04-11 Lam Research Corporation Control of etch rate using modeling, feedback and impedance match
KR102010321B1 (ko) 2013-01-10 2019-08-13 삼성전자주식회사 플라즈마 처리 방법과 상기 방법을 이용할 수 있는 장치들
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US10821542B2 (en) 2013-03-15 2020-11-03 Mks Instruments, Inc. Pulse synchronization by monitoring power in another frequency band
JP6035606B2 (ja) * 2013-04-09 2016-11-30 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
KR101517489B1 (ko) * 2013-04-25 2015-05-07 피에스케이 주식회사 플라즈마 발생 장치 및 그 제어 방법, 그리고 플라즈마 발생 장치를 포함하는 기판 처리 장치
US9336995B2 (en) * 2013-04-26 2016-05-10 Mks Instruments, Inc. Multiple radio frequency power supply control of frequency and phase
US9837252B2 (en) * 2013-05-09 2017-12-05 Lam Research Corporation Systems and methods for using one or more fixtures and efficiency to determine parameters of a match network model
US20140367043A1 (en) * 2013-06-17 2014-12-18 Applied Materials, Inc. Method for fast and repeatable plasma ignition and tuning in plasma chambers
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
TWI668725B (zh) * 2013-10-01 2019-08-11 Lam Research Corporation 使用模型化、回授及阻抗匹配之蝕刻速率的控制
US9472416B2 (en) 2013-10-21 2016-10-18 Applied Materials, Inc. Methods of surface interface engineering
US9318304B2 (en) 2013-11-11 2016-04-19 Applied Materials, Inc. Frequency tuning for dual level radio frequency (RF) pulsing
US9496122B1 (en) 2014-01-10 2016-11-15 Reno Technologies, Inc. Electronically variable capacitor and RF matching network incorporating same
US9755641B1 (en) 2014-01-10 2017-09-05 Reno Technologies, Inc. High speed high voltage switching circuit
US10455729B2 (en) 2014-01-10 2019-10-22 Reno Technologies, Inc. Enclosure cooling system
US9697991B2 (en) 2014-01-10 2017-07-04 Reno Technologies, Inc. RF impedance matching network
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US9844127B2 (en) 2014-01-10 2017-12-12 Reno Technologies, Inc. High voltage switching circuit
US10431428B2 (en) 2014-01-10 2019-10-01 Reno Technologies, Inc. System for providing variable capacitance
US9865432B1 (en) 2014-01-10 2018-01-09 Reno Technologies, Inc. RF impedance matching network
US9196459B2 (en) 2014-01-10 2015-11-24 Reno Technologies, Inc. RF impedance matching network
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
TWI677263B (zh) * 2014-04-23 2019-11-11 美商蘭姆研究公司 軟脈動
KR101522891B1 (ko) * 2014-04-29 2015-05-27 세메스 주식회사 플라즈마 발생 유닛 및 그를 포함하는 기판 처리 장치
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR101677748B1 (ko) * 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
EP3029711B1 (fr) 2014-12-03 2019-10-16 Comet AG Accord de fréquence d'un générateur RF dans un traitement au plasma
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9729122B2 (en) 2015-02-18 2017-08-08 Reno Technologies, Inc. Switching circuit
US11017983B2 (en) 2015-02-18 2021-05-25 Reno Technologies, Inc. RF power amplifier
US9525412B2 (en) 2015-02-18 2016-12-20 Reno Technologies, Inc. Switching circuit
US10340879B2 (en) 2015-02-18 2019-07-02 Reno Technologies, Inc. Switching circuit
US12119206B2 (en) 2015-02-18 2024-10-15 Asm America, Inc. Switching circuit
US9306533B1 (en) 2015-02-20 2016-04-05 Reno Technologies, Inc. RF impedance matching network
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10164483B2 (en) 2015-03-17 2018-12-25 Semiconductor Components Industries, Llc Tunable resonant inductive coil systems for wireless power transfer and near field communications
EP3091559A1 (fr) * 2015-05-05 2016-11-09 TRUMPF Huettinger Sp. Z o. o. Unité d'adaptation d'impédance de plasma, système d'alimentation en puissance rf d'une charge de plasma et procédé d'alimentation en puissance rf d'une charge de plasma
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US11335540B2 (en) 2015-06-29 2022-05-17 Reno Technologies, Inc. Impedance matching network and method
US11150283B2 (en) 2015-06-29 2021-10-19 Reno Technologies, Inc. Amplitude and phase detection circuit
US10692699B2 (en) 2015-06-29 2020-06-23 Reno Technologies, Inc. Impedance matching with restricted capacitor switching
US11342161B2 (en) 2015-06-29 2022-05-24 Reno Technologies, Inc. Switching circuit with voltage bias
US11342160B2 (en) 2015-06-29 2022-05-24 Reno Technologies, Inc. Filter for impedance matching
US10984986B2 (en) 2015-06-29 2021-04-20 Reno Technologies, Inc. Impedance matching network and method
US11081316B2 (en) 2015-06-29 2021-08-03 Reno Technologies, Inc. Impedance matching network and method
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US9721758B2 (en) * 2015-07-13 2017-08-01 Mks Instruments, Inc. Unified RF power delivery single input, multiple output control for continuous and pulse mode operation
US9876476B2 (en) * 2015-08-18 2018-01-23 Mks Instruments, Inc. Supervisory control of radio frequency (RF) impedance tuning operation
US9947514B2 (en) * 2015-09-01 2018-04-17 Mks Instruments, Inc. Plasma RF bias cancellation system
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
JP6043852B2 (ja) * 2015-10-01 2016-12-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9978606B2 (en) 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
US9788405B2 (en) 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9741539B2 (en) * 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
US9754767B2 (en) * 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US9614524B1 (en) 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing
KR20170075887A (ko) * 2015-12-23 2017-07-04 삼성전자주식회사 플라즈마 처리 장치, 그의 플라즈마 처리 방법, 및 플라즈마 식각 방법
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
KR102901060B1 (ko) * 2016-03-03 2025-12-16 램 리써치 코포레이션 매칭 네트워크 모델의 파라미터들을 결정하도록 하나 이상의 픽스처들 및 효율을 사용하기 위한 시스템들 및 방법들
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
JP6392266B2 (ja) * 2016-03-22 2018-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9748076B1 (en) * 2016-04-20 2017-08-29 Advanced Energy Industries, Inc. Apparatus for frequency tuning in a RF generator
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9839109B1 (en) 2016-05-30 2017-12-05 Applied Materials, Inc. Dynamic control band for RF plasma current ratio control
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9972478B2 (en) * 2016-09-16 2018-05-15 Lam Research Corporation Method and process of implementing machine learning in complex multivariate wafer processing equipment
US10009028B2 (en) * 2016-09-30 2018-06-26 Lam Research Corporation Frequency and match tuning in one state and frequency tuning in the other state
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR102762543B1 (ko) 2016-12-14 2025-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10424467B2 (en) 2017-03-13 2019-09-24 Applied Materials, Inc. Smart RF pulsing tuning using variable frequency generators
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
CN108666197B (zh) * 2017-03-31 2020-02-14 北京北方华创微电子装备有限公司 一种脉冲功率源和半导体设备
US10879044B2 (en) * 2017-04-07 2020-12-29 Lam Research Corporation Auxiliary circuit in RF matching network for frequency tuning assisted dual-level pulsing
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
CN109148250B (zh) * 2017-06-15 2020-07-17 北京北方华创微电子装备有限公司 阻抗匹配装置和阻抗匹配方法
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
US11651939B2 (en) 2017-07-07 2023-05-16 Advanced Energy Industries, Inc. Inter-period control system for plasma power delivery system and method of operating same
US12272522B2 (en) 2017-07-10 2025-04-08 Asm America, Inc. Resonant filter for solid state RF impedance matching network
US11289307B2 (en) 2017-07-10 2022-03-29 Reno Technologies, Inc. Impedance matching network and method
US11101110B2 (en) 2017-07-10 2021-08-24 Reno Technologies, Inc. Impedance matching network and method
US11398370B2 (en) 2017-07-10 2022-07-26 Reno Technologies, Inc. Semiconductor manufacturing using artificial intelligence
US11476091B2 (en) 2017-07-10 2022-10-18 Reno Technologies, Inc. Impedance matching network for diagnosing plasma chamber
US11114280B2 (en) 2017-07-10 2021-09-07 Reno Technologies, Inc. Impedance matching with multi-level power setpoint
US10483090B2 (en) 2017-07-10 2019-11-19 Reno Technologies, Inc. Restricted capacitor switching
US10714314B1 (en) 2017-07-10 2020-07-14 Reno Technologies, Inc. Impedance matching network and method
US12334307B2 (en) 2017-07-10 2025-06-17 Asm Ip Holding B.V. Power control for rf impedance matching network
US11315758B2 (en) 2017-07-10 2022-04-26 Reno Technologies, Inc. Impedance matching using electronically variable capacitance and frequency considerations
US10727029B2 (en) 2017-07-10 2020-07-28 Reno Technologies, Inc Impedance matching using independent capacitance and frequency control
US11393659B2 (en) 2017-07-10 2022-07-19 Reno Technologies, Inc. Impedance matching network and method
US11521833B2 (en) 2017-07-10 2022-12-06 Reno Technologies, Inc. Combined RF generator and RF solid-state matching network
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Asm智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10777386B2 (en) * 2017-10-17 2020-09-15 Lam Research Corporation Methods for controlling plasma glow discharge in a plasma chamber
US10264663B1 (en) * 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10679825B2 (en) 2017-11-15 2020-06-09 Lam Research Corporation Systems and methods for applying frequency and match tuning in a non-overlapping manner for processing substrate
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
EP4376061A3 (fr) 2017-11-17 2024-08-21 AES Global Holdings, Pte. Ltd. Commande spatiale et temporelle de tension de polarisation d'ions pour traitement au plasma
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー.ブイ. クリーン・ミニエンバイロメントを備える装置
CN111316417B (zh) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 与批式炉偕同使用的用于储存晶圆匣的储存装置
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Asm 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US10510512B2 (en) * 2018-01-25 2019-12-17 Tokyo Electron Limited Methods and systems for controlling plasma performance
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR102600229B1 (ko) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR102709511B1 (ko) 2018-05-08 2024-09-24 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
US12272527B2 (en) 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
TWI816783B (zh) 2018-05-11 2023-10-01 荷蘭商Asm 智慧財產控股公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Asm Ip私人控股有限公司 水氣降低的晶圓處置腔室
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
CN110648888B (zh) * 2018-06-27 2020-10-13 北京北方华创微电子装备有限公司 射频脉冲匹配方法及其装置、脉冲等离子体产生系统
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
KR20250134000A (ko) 2018-06-27 2025-09-09 에이에스엠 아이피 홀딩 비.브이. 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344B (zh) 2018-10-01 2024-10-25 Asmip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US12378665B2 (en) 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR102748291B1 (ko) 2018-11-02 2024-12-31 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
CN111293021B (zh) * 2018-12-07 2024-01-12 中微半导体设备(上海)股份有限公司 脉冲射频等离子体的阻抗匹配方法和装置
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Asm 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR102727227B1 (ko) 2019-01-22 2024-11-07 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR102638425B1 (ko) 2019-02-20 2024-02-21 에이에스엠 아이피 홀딩 비.브이. 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Asm Ip私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Asm Ip私人控股有限公司 基材處理設備及處理基材之方法
KR102762833B1 (ko) 2019-03-08 2025-02-04 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR102858005B1 (ko) 2019-03-08 2025-09-09 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR102782593B1 (ko) 2019-03-08 2025-03-14 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR102809999B1 (ko) 2019-04-01 2025-05-19 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR102869364B1 (ko) 2019-05-07 2025-10-10 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR102929471B1 (ko) 2019-05-07 2026-02-20 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR102929472B1 (ko) 2019-05-10 2026-02-20 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP7612342B2 (ja) 2019-05-16 2025-01-14 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
JP7598201B2 (ja) 2019-05-16 2024-12-11 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
US11521831B2 (en) 2019-05-21 2022-12-06 Reno Technologies, Inc. Impedance matching network and method with reduced memory requirements
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
US11177115B2 (en) * 2019-06-03 2021-11-16 Applied Materials, Inc. Dual-level pulse tuning
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR102918757B1 (ko) 2019-06-10 2026-01-28 에이에스엠 아이피 홀딩 비.브이. 석영 에피택셜 챔버를 세정하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR102911421B1 (ko) 2019-07-03 2026-01-12 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646B (zh) 2019-07-10 2026-02-10 Asmip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR102895115B1 (ko) 2019-07-16 2025-12-03 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102955799B1 (ko) 2019-07-17 2026-04-21 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR102860110B1 (ko) 2019-07-17 2025-09-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Asm Ip私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
KR102903090B1 (ko) 2019-07-19 2025-12-19 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI851767B (zh) 2019-07-29 2024-08-11 荷蘭商Asm Ip私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309899B (zh) 2019-07-30 2025-11-14 Asmip私人控股有限公司 基板处理设备
KR20210015655A (ko) 2019-07-30 2021-02-10 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 방법
CN112309900B (zh) 2019-07-30 2025-11-04 Asmip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US12622218B2 (en) 2019-07-31 2026-05-05 Asm Ip Holding B.V. Cassette lid opening device
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
KR20210018761A (ko) 2019-08-09 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 냉각 장치를 포함한 히터 어셈블리 및 이를 사용하는 방법
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP7810514B2 (ja) 2019-08-21 2026-02-03 エーエスエム・アイピー・ホールディング・ベー・フェー 成膜原料混合ガス生成装置及び成膜装置
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
KR102928101B1 (ko) 2019-08-23 2026-02-13 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
CN112442674A (zh) 2019-09-03 2021-03-05 Asm Ip私人控股有限公司 用于沉积硫族化物膜的方法和设备以及包括膜的结构
KR102806450B1 (ko) 2019-09-04 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR102733104B1 (ko) 2019-09-05 2024-11-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN112509899B (zh) * 2019-09-16 2024-02-09 中微半导体设备(上海)股份有限公司 电感耦合等离子体处理装置及其点火控制方法
US12469693B2 (en) 2019-09-17 2025-11-11 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Asm Ip私人控股有限公司 基板處理裝置
US12428726B2 (en) 2019-10-08 2025-09-30 Asm Ip Holding B.V. Gas injection system and reactor system including same
KR102948143B1 (ko) 2019-10-08 2026-04-07 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TWI846966B (zh) 2019-10-10 2024-07-01 荷蘭商Asm Ip私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Asm Ip私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR102845724B1 (ko) 2019-10-21 2025-08-13 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR102890638B1 (ko) 2019-11-05 2025-11-25 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR102861314B1 (ko) 2019-11-20 2025-09-17 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697B (zh) 2019-11-26 2025-07-29 Asmip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN120432376A (zh) 2019-11-29 2025-08-05 Asm Ip私人控股有限公司 基板处理设备
CN120998766A (zh) 2019-11-29 2025-11-21 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
JP7703317B2 (ja) 2019-12-17 2025-07-07 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法
KR102943768B1 (ko) 2019-12-19 2026-03-26 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
JP7450387B2 (ja) * 2019-12-27 2024-03-15 株式会社ダイヘン インピーダンス調整装置
TWI901623B (zh) 2020-01-06 2025-10-21 荷蘭商Asm Ip私人控股有限公司 氣體供應總成以及閥板總成
TWI887322B (zh) 2020-01-06 2025-06-21 荷蘭商Asm Ip私人控股有限公司 反應器系統、抬升銷、及處理方法
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102882467B1 (ko) 2020-01-16 2025-11-05 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TWI889744B (zh) 2020-01-29 2025-07-11 荷蘭商Asm Ip私人控股有限公司 污染物捕集系統、及擋板堆疊
TWI871421B (zh) 2020-02-03 2025-02-01 荷蘭商Asm Ip私人控股有限公司 包括釩或銦層的裝置、結構及其形成方法、系統
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
KR20210103953A (ko) 2020-02-13 2021-08-24 에이에스엠 아이피 홀딩 비.브이. 가스 분배 어셈블리 및 이를 사용하는 방법
KR102916725B1 (ko) 2020-02-13 2026-01-23 에이에스엠 아이피 홀딩 비.브이. 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TWI895326B (zh) 2020-02-28 2025-09-01 荷蘭商Asm Ip私人控股有限公司 專用於零件清潔的系統
TWI914330B (zh) 2020-03-04 2026-02-11 荷蘭商Asm Ip私人控股有限公司 反應器系統、及對準夾具
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
US12173404B2 (en) 2020-03-17 2024-12-24 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
KR102755229B1 (ko) 2020-04-02 2025-01-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TWI887376B (zh) 2020-04-03 2025-06-21 荷蘭商Asm Ip私人控股有限公司 半導體裝置的製造方法
WO2021207002A1 (fr) * 2020-04-06 2021-10-14 Lam Research Corporation Procédés et systèmes de commande de pic de puissance d'initiation d'impulsion radiofréquence pour stabilisation de gaine de plasma
TWI888525B (zh) 2020-04-08 2025-07-01 荷蘭商Asm Ip私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR102359463B1 (ko) * 2020-04-21 2022-02-08 인제대학교 산학협력단 온/오프 스위칭이 가능한 중주파 플라즈마 처리장치
KR102901748B1 (ko) 2020-04-21 2025-12-17 에이에스엠 아이피 홀딩 비.브이. 기판을 처리하기 위한 방법
KR102866804B1 (ko) 2020-04-24 2025-09-30 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
KR20210132612A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐 화합물들을 안정화하기 위한 방법들 및 장치
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR102934380B1 (ko) 2020-04-24 2026-03-05 에이에스엠 아이피 홀딩 비.브이. 바나듐 보라이드 및 바나듐 포스파이드 층을 포함한 구조체를 형성하는 방법
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
KR102783898B1 (ko) 2020-04-29 2025-03-18 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
JP7726664B2 (ja) 2020-05-04 2025-08-20 エーエスエム・アイピー・ホールディング・ベー・フェー 基板を処理するための基板処理システム
JP7736446B2 (ja) 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー 同調回路を備える反応器システム
JP2021180215A (ja) * 2020-05-11 2021-11-18 東京エレクトロン株式会社 プラズマ処理方法、プラズマ処理装置及び制御装置
KR102788543B1 (ko) 2020-05-13 2025-03-27 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TWI915365B (zh) 2020-05-15 2026-02-21 荷蘭商Asm Ip私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
TWI911214B (zh) 2020-05-19 2026-01-11 荷蘭商Asm Ip私人控股有限公司 基材處理設備
KR102795476B1 (ko) 2020-05-21 2025-04-11 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR20210145079A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 기판을 처리하기 위한 플랜지 및 장치
TWI873343B (zh) 2020-05-22 2025-02-21 荷蘭商Asm Ip私人控股有限公司 用於在基材上形成薄膜之反應系統
KR20210146802A (ko) 2020-05-26 2021-12-06 에이에스엠 아이피 홀딩 비.브이. 붕소 및 갈륨을 함유한 실리콘 게르마늄 층을 증착하는 방법
TWI876048B (zh) 2020-05-29 2025-03-11 荷蘭商Asm Ip私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Asm Ip私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
KR20210156219A (ko) 2020-06-16 2021-12-24 에이에스엠 아이피 홀딩 비.브이. 붕소를 함유한 실리콘 게르마늄 층을 증착하는 방법
TWI908816B (zh) 2020-06-24 2025-12-21 荷蘭商Asm Ip私人控股有限公司 形成含矽層之方法
TWI873359B (zh) 2020-06-30 2025-02-21 荷蘭商Asm Ip私人控股有限公司 基板處理方法
TWI896694B (zh) 2020-07-01 2025-09-11 荷蘭商Asm Ip私人控股有限公司 沉積方法、半導體結構、及沉積系統
TW202202649A (zh) 2020-07-08 2022-01-16 荷蘭商Asm Ip私人控股有限公司 基板處理方法
TWI864307B (zh) 2020-07-17 2024-12-01 荷蘭商Asm Ip私人控股有限公司 用於光微影之結構、方法與系統
US11615966B2 (en) * 2020-07-19 2023-03-28 Applied Materials, Inc. Flowable film formation and treatments
TWI878570B (zh) 2020-07-20 2025-04-01 荷蘭商Asm Ip私人控股有限公司 用於沉積鉬層之方法及系統
KR20220011092A (ko) 2020-07-20 2022-01-27 에이에스엠 아이피 홀딩 비.브이. 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템
US11189462B1 (en) * 2020-07-21 2021-11-30 Tokyo Electron Limited Ion stratification using bias pulses of short duration
US12322591B2 (en) 2020-07-27 2025-06-03 Asm Ip Holding B.V. Thin film deposition process
TW202605918A (zh) 2020-08-11 2026-02-01 荷蘭商Asm Ip私人控股有限公司 閘極堆疊
KR102915124B1 (ko) 2020-08-14 2026-01-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
TWI911263B (zh) 2020-08-25 2026-01-11 荷蘭商Asm Ip私人控股有限公司 清潔基板的方法、選擇性沉積的方法、及反應器系統
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
TWI911265B (zh) 2020-08-27 2026-01-11 荷蘭商Asm Ip私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、及裝置結構
US11699571B2 (en) 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US11887811B2 (en) 2020-09-08 2024-01-30 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US12142459B2 (en) 2020-09-08 2024-11-12 Applied Materials, Inc. Single chamber flowable film formation and treatments
TWI904232B (zh) 2020-09-10 2025-11-11 荷蘭商Asm Ip私人控股有限公司 沉積間隙填充流體之方法及相關系統和裝置
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
KR20220036866A (ko) 2020-09-16 2022-03-23 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물 증착 방법
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TWI889903B (zh) 2020-09-25 2025-07-11 荷蘭商Asm Ip私人控股有限公司 基板處理方法
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
CN114388427A (zh) 2020-10-06 2022-04-22 Asm Ip私人控股有限公司 用于在特征的侧壁上形成氮化硅的方法和系统
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
KR102855834B1 (ko) 2020-10-14 2025-09-04 에이에스엠 아이피 홀딩 비.브이. 단차형 구조 상에 재료를 증착하는 방법
KR102873665B1 (ko) 2020-10-15 2025-10-17 에이에스엠 아이피 홀딩 비.브이. 반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Asm Ip私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Asm Ip私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202229620A (zh) 2020-11-12 2022-08-01 特文特大學 沉積系統、用於控制反應條件之方法、沉積方法
TW202229795A (zh) 2020-11-23 2022-08-01 荷蘭商Asm Ip私人控股有限公司 具注入器之基板處理設備
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Asm Ip私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
KR20220077875A (ko) 2020-12-02 2022-06-09 에이에스엠 아이피 홀딩 비.브이. 샤워헤드 어셈블리용 세정 고정구
US12387909B2 (en) * 2020-12-08 2025-08-12 Lam Research Corporation Low frequency RF generator and associated electrostatic chuck
US12255053B2 (en) 2020-12-10 2025-03-18 Asm Ip Holding B.V. Methods and systems for depositing a layer
US12159788B2 (en) 2020-12-14 2024-12-03 Asm Ip Holding B.V. Method of forming structures for threshold voltage control
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202232639A (zh) 2020-12-18 2022-08-16 荷蘭商Asm Ip私人控股有限公司 具有可旋轉台的晶圓處理設備
KR20220090435A (ko) 2020-12-22 2022-06-29 에이에스엠 아이피 홀딩 비.브이. 전구체 캡슐, 용기 및 방법
KR20220090438A (ko) 2020-12-22 2022-06-29 에이에스엠 아이피 홀딩 비.브이. 전이금속 증착 방법
TW202226899A (zh) 2020-12-22 2022-07-01 荷蘭商Asm Ip私人控股有限公司 具匹配器的電漿處理裝置
KR102786710B1 (ko) * 2021-01-29 2025-03-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 소스 고주파 전력의 소스 주파수를 제어하는 방법
US11538663B2 (en) 2021-02-23 2022-12-27 Applied Materials, Inc. Methods and apparatus for processing a substrate
US11749505B2 (en) * 2021-02-23 2023-09-05 Applied Materials, Inc. Methods and apparatus for processing a substrate
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
US11328902B1 (en) 2021-06-09 2022-05-10 XP Power Limited Radio frequency generator providing complex RF pulse pattern
JP7434669B2 (ja) 2021-06-21 2024-02-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
USD1059311S1 (en) * 2021-08-13 2025-01-28 Asm Ip Holding B.V. Reaction chamber base plate
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US11862458B2 (en) * 2021-09-08 2024-01-02 Applied Materials, Inc. Directional selective deposition
JP7633133B2 (ja) * 2021-09-30 2025-02-19 株式会社ダイヘン 高周波電源装置
US11877378B2 (en) * 2021-10-08 2024-01-16 National Yang Ming Chiao Tung University Plasma fine bubble liquid generating apparatus
USD1099184S1 (en) 2021-11-29 2025-10-21 Asm Ip Holding B.V. Weighted lift pin
USD1060598S1 (en) 2021-12-03 2025-02-04 Asm Ip Holding B.V. Split showerhead cover
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US12046449B2 (en) * 2022-04-22 2024-07-23 Applied Materials, Inc. Methods and apparatus for processing a substrate
US12620555B2 (en) 2022-05-27 2026-05-05 Tokyo Electron Limited Systems and methods for plasma process
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
TW202433541A (zh) 2022-10-31 2024-08-16 美商Asm美國股份有限公司 與連續波源及脈衝源之射頻阻抗匹配、及半導體處理工具
US12293897B2 (en) * 2023-02-28 2025-05-06 Applied Materials, Inc. Radio frequency diverter assembly enabling on-demand different spatial
US12567572B2 (en) 2023-07-11 2026-03-03 Advanced Energy Industries, Inc. Plasma behaviors predicted by current measurements during asymmetric bias waveform application

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040045506A1 (en) * 2001-03-30 2004-03-11 Lam Research Corporation Inductive plasma processor method
US20040107906A1 (en) * 2000-08-11 2004-06-10 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2727607B2 (ja) * 1988-11-22 1998-03-11 株式会社ダイヘン プラズマ装置のインピーダンス整合方法
JP2737377B2 (ja) * 1990-06-25 1998-04-08 富士電機株式会社 プラズマ処理装置
US5556549A (en) * 1994-05-02 1996-09-17 Lsi Logic Corporation Power control and delivery in plasma processing equipment
JP2884056B2 (ja) * 1995-12-07 1999-04-19 パール工業株式会社 放電プラズマ発生用高周波電源装置及び半導体製造装置
US6353206B1 (en) * 1996-05-30 2002-03-05 Applied Materials, Inc. Plasma system with a balanced source
JPH10241895A (ja) * 1996-11-04 1998-09-11 Applied Materials Inc プラズマシース発生高調波をフィルタリングすることによるプラズマプロセス効率の改善
US6174450B1 (en) * 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
JP3629705B2 (ja) * 1997-06-06 2005-03-16 東京エレクトロン株式会社 プラズマ処理装置
US5971591A (en) * 1997-10-20 1999-10-26 Eni Technologies, Inc. Process detection system for plasma process
US6020794A (en) * 1998-02-09 2000-02-01 Eni Technologies, Inc. Ratiometric autotuning algorithm for RF plasma generator
JPH11345803A (ja) * 1998-06-03 1999-12-14 Matsushita Electric Ind Co Ltd プラズマ発生加工方法およびプラズマ発生加工装置
DE19933842A1 (de) * 1999-07-20 2001-02-01 Bosch Gmbh Robert Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas
US6472822B1 (en) * 2000-04-28 2002-10-29 Applied Materials, Inc. Pulsed RF power delivery for plasma processing
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
JP2003179045A (ja) * 2001-12-13 2003-06-27 Tokyo Electron Ltd プラズマ処理装置及びその制御方法
US6818562B2 (en) * 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
US6703080B2 (en) * 2002-05-20 2004-03-09 Eni Technology, Inc. Method and apparatus for VHF plasma processing with load mismatch reliability and stability
US7967944B2 (en) * 2008-05-29 2011-06-28 Applied Materials, Inc. Method of plasma load impedance tuning by modulation of an unmatched low power RF generator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040107906A1 (en) * 2000-08-11 2004-06-10 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US20040045506A1 (en) * 2001-03-30 2004-03-11 Lam Research Corporation Inductive plasma processor method

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TWI519211B (zh) 2016-01-21
CN102027810A (zh) 2011-04-20
TW201542042A (zh) 2015-11-01
TW201010524A (en) 2010-03-01
JP5877873B2 (ja) 2016-03-08
TWI586224B (zh) 2017-06-01
CN102027810B (zh) 2014-08-13
KR20150017389A (ko) 2015-02-16
JP2014222657A (ja) 2014-11-27
JP2011525682A (ja) 2011-09-22
KR101528528B1 (ko) 2015-06-12
US8264154B2 (en) 2012-09-11
US20090284156A1 (en) 2009-11-19
WO2009140371A2 (fr) 2009-11-19
KR20110019743A (ko) 2011-02-28

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