WO2009143796A3 - Optoelektronisches halbleiterbauteil und leiterplatte - Google Patents

Optoelektronisches halbleiterbauteil und leiterplatte Download PDF

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Publication number
WO2009143796A3
WO2009143796A3 PCT/DE2009/000543 DE2009000543W WO2009143796A3 WO 2009143796 A3 WO2009143796 A3 WO 2009143796A3 DE 2009000543 W DE2009000543 W DE 2009000543W WO 2009143796 A3 WO2009143796 A3 WO 2009143796A3
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic semiconductor
semiconductor component
circuit board
printed circuit
base mount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2009/000543
Other languages
English (en)
French (fr)
Other versions
WO2009143796A2 (de
Inventor
Harald JÄGER
Jörg Erich SORG
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to EP09753512.4A priority Critical patent/EP2281316B1/de
Priority to JP2011510816A priority patent/JP5750040B2/ja
Priority to CN2009801090657A priority patent/CN101971375B/zh
Priority to US12/922,240 priority patent/US9397271B2/en
Publication of WO2009143796A2 publication Critical patent/WO2009143796A2/de
Publication of WO2009143796A3 publication Critical patent/WO2009143796A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0366—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement reinforced, e.g. by fibres, fabrics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0162—Silicon containing polymer, e.g. silicone
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Device Packages (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

In mindestens einer Ausführungsform des optoelektronischen Halbleiterbauteils umfasst dieses einen Anschlussträger mit mindestens zwei Anschlussstellen, mindestens einen optoelektronischen Halbleiterchip, der am Anschlussträger angebracht ist und in direktem Kontakt zu diesem steht, wobei der Anschlussträger mit einer Silikonmatrix mit einer Faserverstärkung gestaltet ist. Durch die Verwendung eines Anschlussträgers mit einer Silikonmatrix mit einer Faserverstärkung kann ein mechanisch stabiles und dabei temperatur- und UV-beständiges Halbleiterbauteil realisiert werden.
PCT/DE2009/000543 2008-05-28 2009-04-20 Optoelektronisches halbleiterbauteil und leiterplatte Ceased WO2009143796A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP09753512.4A EP2281316B1 (de) 2008-05-28 2009-04-20 Optoelektronisches halbleiterbauteil
JP2011510816A JP5750040B2 (ja) 2008-05-28 2009-04-20 オプトエレクトロニクス半導体コンポーネント
CN2009801090657A CN101971375B (zh) 2008-05-28 2009-04-20 光电子半导体器件和电路板
US12/922,240 US9397271B2 (en) 2008-05-28 2009-04-20 UV- and heat-resistant optoelectronic semiconductor component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008025491A DE102008025491A1 (de) 2008-05-28 2008-05-28 Optoelektronisches Halbleiterbauteil und Leiterplatte
DE102008025491.6 2008-05-28

Publications (2)

Publication Number Publication Date
WO2009143796A2 WO2009143796A2 (de) 2009-12-03
WO2009143796A3 true WO2009143796A3 (de) 2010-03-11

Family

ID=41064795

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2009/000543 Ceased WO2009143796A2 (de) 2008-05-28 2009-04-20 Optoelektronisches halbleiterbauteil und leiterplatte

Country Status (7)

Country Link
US (1) US9397271B2 (de)
EP (1) EP2281316B1 (de)
JP (1) JP5750040B2 (de)
KR (1) KR101541565B1 (de)
CN (1) CN101971375B (de)
DE (1) DE102008025491A1 (de)
WO (1) WO2009143796A2 (de)

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DE102010044470B4 (de) 2010-09-06 2018-06-28 Heraeus Noblelight Gmbh Verfahren zur Beschichtung eines optoelektronischen Chip-On-Board-Moduls, optoelektronisches Chip-On-Board-Modul und System damit
DE102010054068A1 (de) * 2010-12-10 2012-06-14 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und Bauelement
JP5795251B2 (ja) 2011-12-14 2015-10-14 信越化学工業株式会社 光学半導体装置用基台及びその製造方法、並びに光学半導体装置
JP5851875B2 (ja) * 2012-02-14 2016-02-03 信越化学工業株式会社 光学半導体装置用パッケージの製造方法及び光学半導体装置の製造方法
TWI590494B (zh) 2012-02-14 2017-07-01 信越化學工業股份有限公司 Optical semiconductor device package, its manufacturing method, and optical semiconductor device and its manufacturing method
JP5770674B2 (ja) * 2012-04-04 2015-08-26 信越化学工業株式会社 光学半導体装置用基板及びその製造方法、並びに光学半導体装置
JP5767160B2 (ja) * 2012-05-07 2015-08-19 信越化学工業株式会社 光学半導体装置用基板の製造方法
DE102012105176B4 (de) * 2012-06-14 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
JP2014203942A (ja) * 2013-04-04 2014-10-27 信越化学工業株式会社 光半導体装置
KR102086098B1 (ko) * 2013-07-03 2020-03-09 삼성디스플레이 주식회사 표시 장치
JP2015165546A (ja) * 2014-02-07 2015-09-17 株式会社ミマキエンジニアリング 紫外線発光ダイオードユニット、紫外線発光ダイオードユニットのセット、インクジェット装置および三次元造形物製造装置
JP6628473B2 (ja) * 2014-12-26 2020-01-08 日亜化学工業株式会社 発光装置
DE102015115722A1 (de) * 2015-09-17 2017-03-23 Osram Opto Semiconductors Gmbh Träger für ein Bauelement, Bauelement und Verfahren zur Herstellung eines Trägers oder eines Bauelements
JP6365592B2 (ja) * 2016-05-31 2018-08-01 日亜化学工業株式会社 発光装置
US10083885B1 (en) * 2017-06-06 2018-09-25 Cree, Inc. Multi-layer potting for electronic modules
JP7089167B2 (ja) * 2018-04-23 2022-06-22 日亜化学工業株式会社 発光装置
CN113258274B (zh) * 2020-02-10 2025-06-06 东友精细化工有限公司 天线堆叠结构和包括天线堆叠结构的显示装置
DE102020111728B4 (de) 2020-04-29 2022-06-23 Schott Ag Elektro-optisches Wandlerbauteil mit einem Abstandhalter, sowie Abstandhalter-Wafer zur Herstellung eines elektro-optischen Wandlerbauteils

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US20040166332A1 (en) * 2003-02-25 2004-08-26 Bizhong Zhu Hybrid composite of silicone and organic resins
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EP1657758A2 (de) * 2004-11-15 2006-05-17 LumiLeds Lighting U.S., LLC Leuchtdiode mit gegossener Linse und Herstellungsverfahren
WO2006099741A1 (en) * 2005-03-24 2006-09-28 Tir Systems Ltd. Solid-state lighting device package
US20080068845A1 (en) * 2006-08-03 2008-03-20 Toyoda Gosei Co., Ltd. Optical device and method for making the same

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EP1187228A1 (de) * 2000-02-09 2002-03-13 Nippon Leiz Corporation Lichtquelle
US20040166332A1 (en) * 2003-02-25 2004-08-26 Bizhong Zhu Hybrid composite of silicone and organic resins
WO2005072031A2 (en) * 2004-01-20 2005-08-04 World Properties, Inc. Circuit materials, circuits, multi-layer circuits, and methods of manufacture thereof
EP1657758A2 (de) * 2004-11-15 2006-05-17 LumiLeds Lighting U.S., LLC Leuchtdiode mit gegossener Linse und Herstellungsverfahren
WO2006099741A1 (en) * 2005-03-24 2006-09-28 Tir Systems Ltd. Solid-state lighting device package
US20080068845A1 (en) * 2006-08-03 2008-03-20 Toyoda Gosei Co., Ltd. Optical device and method for making the same

Also Published As

Publication number Publication date
KR101541565B1 (ko) 2015-08-04
CN101971375A (zh) 2011-02-09
WO2009143796A2 (de) 2009-12-03
CN101971375B (zh) 2013-02-20
EP2281316A2 (de) 2011-02-09
US9397271B2 (en) 2016-07-19
KR20110016857A (ko) 2011-02-18
JP5750040B2 (ja) 2015-07-15
EP2281316B1 (de) 2015-06-10
DE102008025491A1 (de) 2009-12-03
JP2011521481A (ja) 2011-07-21
US20110108870A1 (en) 2011-05-12

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