WO2009145501A3 - 발광 소자 및 그 제조방법 - Google Patents

발광 소자 및 그 제조방법 Download PDF

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Publication number
WO2009145501A3
WO2009145501A3 PCT/KR2009/001763 KR2009001763W WO2009145501A3 WO 2009145501 A3 WO2009145501 A3 WO 2009145501A3 KR 2009001763 W KR2009001763 W KR 2009001763W WO 2009145501 A3 WO2009145501 A3 WO 2009145501A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
type semiconductor
conductivity type
semiconductor layer
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/001763
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English (en)
French (fr)
Other versions
WO2009145501A2 (ko
Inventor
송준오
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN200980116970.5A priority Critical patent/CN102047446B/zh
Priority to EP09754966.1A priority patent/EP2264792B1/en
Priority to US12/936,292 priority patent/US9406846B2/en
Publication of WO2009145501A2 publication Critical patent/WO2009145501A2/ko
Publication of WO2009145501A3 publication Critical patent/WO2009145501A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)

Abstract

실시예에 따른 발광 소자는 제1 도전형의 반도체층; 상기 제1 도전형의 반도체층 상에 활성층; 상기 활성층 상에 제2 도전형의 반도체층; 상기 제1 도전형의 반도체층, 활성층, 및 제2 도전형의 반도체층을 포위하는 제1 패시베이션층; 상기 제1 패시베이션층을 관통하여 상기 제2 도전형의 반도체층과 전기적으로 연결되는 제2 연결층; 상기 제1 패시베이션층 및 제2 연결층 상에 제1 광 추출 구조층; 상기 제1 도전형의 반도체층과 전기적으로 연결되는 제1 전극층; 및 상기 제1 광 추출 구조층 상에 제2 전극층을 포함한다.
PCT/KR2009/001763 2008-04-05 2009-04-06 발광 소자 및 그 제조방법 Ceased WO2009145501A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200980116970.5A CN102047446B (zh) 2008-04-05 2009-04-06 发光器件和制造发光器件的方法
EP09754966.1A EP2264792B1 (en) 2008-04-05 2009-04-06 Light emitting device
US12/936,292 US9406846B2 (en) 2008-04-05 2009-04-06 Light emitting device and method of manufacturing the same for improving the light extraction efficiency

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0031906 2008-04-05
KR1020080031906A KR20090106299A (ko) 2008-04-05 2008-04-05 오믹접촉 광추출 구조층을 구비한 그룹 3족 질화물계반도체 발광다이오드 소자 및 이의 제조 방법

Publications (2)

Publication Number Publication Date
WO2009145501A2 WO2009145501A2 (ko) 2009-12-03
WO2009145501A3 true WO2009145501A3 (ko) 2010-02-18

Family

ID=41377738

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001763 Ceased WO2009145501A2 (ko) 2008-04-05 2009-04-06 발광 소자 및 그 제조방법

Country Status (5)

Country Link
US (1) US9406846B2 (ko)
EP (1) EP2264792B1 (ko)
KR (1) KR20090106299A (ko)
CN (2) CN104022205B (ko)
WO (1) WO2009145501A2 (ko)

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US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
KR100999779B1 (ko) * 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR101735670B1 (ko) * 2010-07-13 2017-05-15 엘지이노텍 주식회사 발광 소자
KR101767101B1 (ko) * 2011-05-23 2017-08-24 삼성전자주식회사 반도체 발광소자 및 그 제조방법
DE102011114641B4 (de) * 2011-09-30 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
KR101744930B1 (ko) * 2012-12-28 2017-06-09 서울바이오시스 주식회사 광 검출 소자
CN104347765A (zh) * 2013-08-06 2015-02-11 上海蓝光科技有限公司 一种发光二极管及其制造方法
DE102015111573A1 (de) 2015-07-16 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102015112879A1 (de) * 2015-08-05 2017-02-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
KR102532743B1 (ko) * 2016-12-06 2023-05-16 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
US10396248B2 (en) * 2017-04-17 2019-08-27 Lumens Co., Ltd. Semiconductor light emitting diode
CN107507894B (zh) * 2017-07-25 2019-11-01 厦门三安光电有限公司 一种发光二极管芯片结构及其制作方法
CN114695609B (zh) * 2018-04-08 2024-06-14 泉州三安半导体科技有限公司 一种发光二极管芯片结构及其制作方法
KR102805792B1 (ko) * 2019-11-26 2025-05-12 삼성전자주식회사 Led 소자 및 그 제조방법과, led 소자를 포함하는 디스플레이 장치
WO2021184310A1 (zh) * 2020-03-19 2021-09-23 厦门三安光电有限公司 发光二极管
JP6995227B1 (ja) * 2021-01-07 2022-01-14 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
KR20240103111A (ko) * 2022-12-26 2024-07-04 엘지디스플레이 주식회사 발광 소자, 이를 포함하는 표시장치 및 이들의 제조방법

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Also Published As

Publication number Publication date
CN104022205A (zh) 2014-09-03
EP2264792B1 (en) 2018-05-30
EP2264792A4 (en) 2015-03-04
KR20090106299A (ko) 2009-10-08
CN104022205B (zh) 2017-04-26
US20110140152A1 (en) 2011-06-16
US9406846B2 (en) 2016-08-02
CN102047446B (zh) 2014-05-07
EP2264792A2 (en) 2010-12-22
WO2009145501A2 (ko) 2009-12-03
CN102047446A (zh) 2011-05-04

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