WO2010035144A2 - Transistor, capteur optique équipé d'un tel transistor et procédé de fabrication correspondant - Google Patents

Transistor, capteur optique équipé d'un tel transistor et procédé de fabrication correspondant Download PDF

Info

Publication number
WO2010035144A2
WO2010035144A2 PCT/IB2009/007312 IB2009007312W WO2010035144A2 WO 2010035144 A2 WO2010035144 A2 WO 2010035144A2 IB 2009007312 W IB2009007312 W IB 2009007312W WO 2010035144 A2 WO2010035144 A2 WO 2010035144A2
Authority
WO
WIPO (PCT)
Prior art keywords
same
transistor
manufacturing
image sensor
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2009/007312
Other languages
English (en)
Korean (ko)
Other versions
WO2010035144A3 (fr
Inventor
하만륜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intellectual Ventures II LLC
Original Assignee
Crosstek Capital LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crosstek Capital LLC filed Critical Crosstek Capital LLC
Publication of WO2010035144A2 publication Critical patent/WO2010035144A2/fr
Publication of WO2010035144A3 publication Critical patent/WO2010035144A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention concerne un transistor comprenant une électrode de grille formée sur un substrat, des régions source et de drain formées dans le substrat exposé aux deux côtés de l'électrode de grille; et une région de dopage sélectivement formée sur une partie supérieure de la région de drain dans l'alignement de l'électrode de grille.
PCT/IB2009/007312 2008-09-29 2009-09-29 Transistor, capteur optique équipé d'un tel transistor et procédé de fabrication correspondant Ceased WO2010035144A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080095463A KR20100036034A (ko) 2008-09-29 2008-09-29 트랜지스터, 이를 구비한 이미지 센서 및 그의 제조방법
KR10-2008-0095463 2008-09-29

Publications (2)

Publication Number Publication Date
WO2010035144A2 true WO2010035144A2 (fr) 2010-04-01
WO2010035144A3 WO2010035144A3 (fr) 2010-07-29

Family

ID=41718958

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2009/007312 Ceased WO2010035144A2 (fr) 2008-09-29 2009-09-29 Transistor, capteur optique équipé d'un tel transistor et procédé de fabrication correspondant

Country Status (2)

Country Link
KR (1) KR20100036034A (fr)
WO (1) WO2010035144A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2453478A1 (fr) * 2010-11-16 2012-05-16 Canon Kabushiki Kaisha Capteur d'image à l'état solide, procédé de fabrication associé et appareil d'imagerie

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5510279A (en) * 1995-01-06 1996-04-23 United Microelectronics Corp. Method of fabricating an asymmetric lightly doped drain transistor device
US6020232A (en) * 1996-12-03 2000-02-01 Advanced Micro Devices, Inc. Process of fabricating transistors having source and drain regions laterally displaced from the transistors gate
JPH11145307A (ja) * 1997-11-07 1999-05-28 Fujitsu Ltd 半導体集積回路装置
US7214575B2 (en) * 2004-01-06 2007-05-08 Micron Technology, Inc. Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors
KR100660549B1 (ko) * 2005-07-13 2006-12-22 삼성전자주식회사 이미지 센서 및 그 제조 방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2453478A1 (fr) * 2010-11-16 2012-05-16 Canon Kabushiki Kaisha Capteur d'image à l'état solide, procédé de fabrication associé et appareil d'imagerie
CN102468317A (zh) * 2010-11-16 2012-05-23 佳能株式会社 固态图像传感器、其制造方法和成像系统
RU2488190C1 (ru) * 2010-11-16 2013-07-20 Кэнон Кабусики Кайся Твердотельный датчик изображения, способ его производства и система формирования изображения
US8952433B2 (en) 2010-11-16 2015-02-10 Canon Kabushiki Kaisha Solid-state image sensor, method of manufacturing the same, and imaging system

Also Published As

Publication number Publication date
WO2010035144A3 (fr) 2010-07-29
KR20100036034A (ko) 2010-04-07

Similar Documents

Publication Publication Date Title
TW200644224A (en) Semiconductor device and method for manufacturing the same
TW200731415A (en) Methods for forming a semiconductor device
GB2503048A (en) Fabrication of a vertical heterojunction tunnel-fet
TW200633219A (en) Device with stepped source/drain region profile
SG166085A1 (en) Semiconductor device including a mos transistor and production method therefor
EP2214211A3 (fr) Appareil d'affichage à écran plat et son procédé de fabrication
WO2013049463A3 (fr) Transistor à effet de champ sensible aux ions à double grille
WO2012119125A3 (fr) Transistors haute performance au graphène et procédés de fabrication de ces derniers
EP2383778A3 (fr) Dispositif semi-conducteur et procédé de fabrication de celui-ci
WO2009058695A3 (fr) Transistor à ionisation par choc froid et son procédé de fabrication
WO2009019864A1 (fr) Dispositif à semi-conducteur, son procédé de fabrication et dispositif d'affichage d'image
TW200741978A (en) Stressor integration and method thereof
TW200633125A (en) Semiconductor device and method of semiconductor device
TW200644237A (en) High-voltage MOS device
GB2439586B (en) Liquid crystal display device and fabricating method thereof
TW200727492A (en) Organic thin film transistor array panel
GB0508407D0 (en) Alignment of trench for MOS
TW200802884A (en) Thin film transistor, method for fabricating the same and display device
EP2096673A3 (fr) Dispositif d'affichage et son procédé de fabrication
SG156582A1 (en) Enhanced stress for transistors
WO2006122068A3 (fr) Pixel a contacts de grille superposes a la zone active et procede permettant de former ces pixels
TW200644221A (en) Method of forming an integrated power device and structure
WO2008156140A1 (fr) Dispositif à semi-conducteur
WO2011150137A3 (fr) Dispositifs à semi-conducteur améliorés faisant appel à des matériaux organiques photoactifs et leurs procédés de fabrication
TW200715563A (en) Semiconductor device and method for manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09774703

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09774703

Country of ref document: EP

Kind code of ref document: A2