WO2010051784A3 - Oberflächenemittierendes halbleiterlaserbauelement mit einer vertikalen emissionsrichtung - Google Patents

Oberflächenemittierendes halbleiterlaserbauelement mit einer vertikalen emissionsrichtung Download PDF

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Publication number
WO2010051784A3
WO2010051784A3 PCT/DE2009/001214 DE2009001214W WO2010051784A3 WO 2010051784 A3 WO2010051784 A3 WO 2010051784A3 DE 2009001214 W DE2009001214 W DE 2009001214W WO 2010051784 A3 WO2010051784 A3 WO 2010051784A3
Authority
WO
WIPO (PCT)
Prior art keywords
layers
semiconductor laser
emission direction
emitting semiconductor
laser component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2009/001214
Other languages
English (en)
French (fr)
Other versions
WO2010051784A2 (de
Inventor
Bernd Mayer
Andreas Koller
Joachim Pfeiffer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to US13/127,126 priority Critical patent/US20120134382A1/en
Priority to CN2009801440491A priority patent/CN102204039A/zh
Priority to EP09776120A priority patent/EP2342786A2/de
Priority to JP2011534999A priority patent/JP2012507876A/ja
Publication of WO2010051784A2 publication Critical patent/WO2010051784A2/de
Publication of WO2010051784A3 publication Critical patent/WO2010051784A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H01S5/18333—Position of the structure with more than one structure only above the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Es wird ein oberflächenemittierendes Halbleiterlaser-Bauelement mit einer vertikalen Emissionsrichtung angegeben, das einen Halbleiterkörper umfasst, der einen ersten Resonatorspiegel (2), einen zweiten Resonatorspiegel (4) und eine zur Strahlungserzeugung geeignete aktive Zone (3) aufweist. Der erste Resonatorspiegel (2) weist alternierend gestapelte erste Schichten (2a) einer ersten Zusammensetzung und zweite Schichten (2b) einer zweiten Zusammensetzung auf. Die ersten Schichten (2a) weisen oxidierte Bereiche (8a) auf. Ferner enthalten zumindest die ersten Schichten (2a) jeweils einen Dotierstoff, wobei mindestens eine Schicht (21a) der ersten Schichten (2a) eine von der Dotierstoffkonzentration der anderen ersten Schichten (2a) unterschiedliche Dotierstoffkonzentration aufweist.
PCT/DE2009/001214 2008-11-05 2009-08-26 Oberflächenemittierendes halbleiterlaserbauelement mit einer vertikalen emissionsrichtung Ceased WO2010051784A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/127,126 US20120134382A1 (en) 2008-11-05 2009-08-26 Surface emitting semiconductor laser component having a vertical emission direction
CN2009801440491A CN102204039A (zh) 2008-11-05 2009-08-26 具有垂直发射方向的表面发射半导体激光器件
EP09776120A EP2342786A2 (de) 2008-11-05 2009-08-26 Oberflächenemittierendes halbleiterlaserbauelement mit einer vertikalen emissionsrichtung
JP2011534999A JP2012507876A (ja) 2008-11-05 2009-08-26 垂直放射形の表面放射半導体レーザ素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008055941.5 2008-11-05
DE102008055941A DE102008055941A1 (de) 2008-11-05 2008-11-05 Oberflächenemittierendes Halbleiterlaserbauelement mit einer vertikalen Emissionsrichtung

Publications (2)

Publication Number Publication Date
WO2010051784A2 WO2010051784A2 (de) 2010-05-14
WO2010051784A3 true WO2010051784A3 (de) 2010-09-23

Family

ID=42078974

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2009/001214 Ceased WO2010051784A2 (de) 2008-11-05 2009-08-26 Oberflächenemittierendes halbleiterlaserbauelement mit einer vertikalen emissionsrichtung

Country Status (7)

Country Link
US (1) US20120134382A1 (de)
EP (1) EP2342786A2 (de)
JP (1) JP2012507876A (de)
KR (1) KR20110093839A (de)
CN (1) CN102204039A (de)
DE (1) DE102008055941A1 (de)
WO (1) WO2010051784A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110495061B (zh) * 2018-02-06 2020-11-27 华为技术有限公司 一种垂直腔面发射激光器
US11362486B2 (en) * 2019-05-06 2022-06-14 Mellanox Technologies, Ltd. High speed high bandwidth vertical-cavity surface-emitting laser with controlled overshoot
US11099393B2 (en) * 2019-11-22 2021-08-24 Facebook Technologies, Llc Surface emitting light source with lateral variant refractive index profile
US11749964B2 (en) 2020-06-24 2023-09-05 Meta Platforms Technologies, Llc Monolithic light source with integrated optics based on nonlinear frequency conversion
DE102022134465B4 (de) * 2022-01-01 2026-05-07 Canon Kabushiki Kaisha Halbleiterlichtemissionsbauelement, Lichtemissionsvorrichtung und Entfernungsmessvorrichtung
CN114975652B (zh) * 2022-07-25 2022-12-23 浙江晶科能源有限公司 一种光伏电池及光伏电池的制造方法
DE102023125473A1 (de) * 2023-09-20 2025-03-20 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Oberflächenemittierender Diodenlaser-Chip und Diodenlaser
US20260066618A1 (en) * 2024-08-28 2026-03-05 Ii-Vi Delaware, Inc. Graded Metal-Oxide Layers in Vertical Cavity Surface-Emitting Laser

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998005073A1 (en) * 1996-07-25 1998-02-05 Picolight Incorporated Lens comprising at least one oxidized layer and method for forming same
US20050265415A1 (en) * 2004-05-28 2005-12-01 Lambkin John D Laser diode and method of manufacture
US20060187997A1 (en) * 2005-01-17 2006-08-24 Kabushiki Kaisha Toshiba Vertical cavity surface emitting laser diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19813727C2 (de) * 1998-03-27 2000-04-13 Siemens Ag Vertikalresonator-Laserdiode und Verfahren zu deren Herstellung
GB2377318A (en) * 2001-07-03 2003-01-08 Mitel Semiconductor Ab Vertical Cavity Surface Emitting Laser
US7054345B2 (en) * 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
DE102006010727B4 (de) * 2005-12-05 2019-10-24 Osram Opto Semiconductors Gmbh Oberflächenemittierendes Halbleiterbauelement mit einem Tunnelübergang
US7916768B2 (en) * 2008-03-24 2011-03-29 The Regents Of The University Of California Small dimension high-efficiency high-speed vertical-cavity surface-emitting lasers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998005073A1 (en) * 1996-07-25 1998-02-05 Picolight Incorporated Lens comprising at least one oxidized layer and method for forming same
US20050265415A1 (en) * 2004-05-28 2005-12-01 Lambkin John D Laser diode and method of manufacture
US20060187997A1 (en) * 2005-01-17 2006-08-24 Kabushiki Kaisha Toshiba Vertical cavity surface emitting laser diode

Also Published As

Publication number Publication date
KR20110093839A (ko) 2011-08-18
EP2342786A2 (de) 2011-07-13
JP2012507876A (ja) 2012-03-29
DE102008055941A1 (de) 2010-06-17
CN102204039A (zh) 2011-09-28
US20120134382A1 (en) 2012-05-31
WO2010051784A2 (de) 2010-05-14

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