WO2010055346A3 - Cellules solaires photovoltaïques - Google Patents

Cellules solaires photovoltaïques Download PDF

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Publication number
WO2010055346A3
WO2010055346A3 PCT/GB2009/051528 GB2009051528W WO2010055346A3 WO 2010055346 A3 WO2010055346 A3 WO 2010055346A3 GB 2009051528 W GB2009051528 W GB 2009051528W WO 2010055346 A3 WO2010055346 A3 WO 2010055346A3
Authority
WO
WIPO (PCT)
Prior art keywords
rear surface
doped region
doped
solar cells
passivation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2009/051528
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English (en)
Other versions
WO2010055346A2 (fr
Inventor
Humayun Akhter Mughal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILICON CPV PLC
Original Assignee
SILICON CPV PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILICON CPV PLC filed Critical SILICON CPV PLC
Priority to EP09771758.1A priority Critical patent/EP2356687B1/fr
Priority to CN200980149558.3A priority patent/CN102246324B/zh
Priority to US13/128,742 priority patent/US8889462B2/en
Priority to JP2011543814A priority patent/JP5503668B2/ja
Publication of WO2010055346A2 publication Critical patent/WO2010055346A2/fr
Publication of WO2010055346A3 publication Critical patent/WO2010055346A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

L'invention concerne des cellules solaires de concentrateur photovoltaïque et un procédé de formation de celles-ci à partir d'une plaquette à semi-conducteur. Le procédé consiste en premier lieu à doper la surface arrière de ladite plaquette de façon à produire une première région dopée, à déposer des couches de passivation sur les surfaces avant et arrière, à former une rainure profonde dans la surface arrière à travers la couche de passivation et à doper ladite surface arrière de façon à produire une seconde région dopée de manière opposée dans la rainure profonde. Une ouverture est ensuite formée à travers la couche de passivation arrière en direction de la première région dopée; et des bornes électriques sont formées sur la surface arrière de façon à se connecter électriquement à la première et à la seconde régions dopées. La cellule solaire du concentrateur photovoltaïque possède une plaquette à semi-conducteur avec une couche de passivation déposée sur les surfaces avant et arrière; et une première région dopée au niveau de la surface arrière. Il présente également une borne de type p dans une ouverture à partir de la surface arrière pour venir au contact de ladite première région dopée; une borne électrique de type n dans une rainure profonde se prolongeant dans la plaquette à partir de la surface arrière; et une seconde région dopée, dopée à partir de la rainure après sa formation, mais avant la formation de la borne électrique de type n.
PCT/GB2009/051528 2008-11-12 2009-11-12 Cellules solaires photovoltaïques Ceased WO2010055346A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP09771758.1A EP2356687B1 (fr) 2008-11-12 2009-11-12 Cellules solaires photovoltaïques à gorge profonde
CN200980149558.3A CN102246324B (zh) 2008-11-12 2009-11-12 深沟槽背接触光伏太阳能电池
US13/128,742 US8889462B2 (en) 2008-11-12 2009-11-12 Photovoltaic solar cells
JP2011543814A JP5503668B2 (ja) 2008-11-12 2009-11-12 太陽光電池

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0820684.9A GB0820684D0 (en) 2008-11-12 2008-11-12 Photovoltaic solar cells
GB0820684.9 2008-11-12

Publications (2)

Publication Number Publication Date
WO2010055346A2 WO2010055346A2 (fr) 2010-05-20
WO2010055346A3 true WO2010055346A3 (fr) 2011-03-31

Family

ID=40139786

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2009/051528 Ceased WO2010055346A2 (fr) 2008-11-12 2009-11-12 Cellules solaires photovoltaïques

Country Status (7)

Country Link
US (1) US8889462B2 (fr)
EP (1) EP2356687B1 (fr)
JP (1) JP5503668B2 (fr)
KR (1) KR101561682B1 (fr)
CN (1) CN102246324B (fr)
GB (2) GB0820684D0 (fr)
WO (1) WO2010055346A2 (fr)

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EP2356689A4 (fr) * 2008-11-26 2013-11-20 Microlink Devices Inc Pile solaire dotée d'un orifice de surface inférieure permettant de s'engager avec la couche émettrice
US20110195542A1 (en) * 2010-02-05 2011-08-11 E-Chem Enterprise Corp. Method of providing solar cell electrode by electroless plating and an activator used therein
JP2011210802A (ja) * 2010-03-29 2011-10-20 Napura:Kk 太陽電池
CN102569492B (zh) * 2010-12-17 2014-11-05 上海凯世通半导体有限公司 太阳能晶片的掺杂方法以及掺杂晶片
CN102637767B (zh) * 2011-02-15 2015-03-18 上海凯世通半导体有限公司 太阳能电池的制作方法以及太阳能电池
CN102569491B (zh) * 2010-12-17 2014-07-23 上海凯世通半导体有限公司 太阳能晶片的掺杂方法以及掺杂晶片
CN102637766B (zh) * 2011-02-15 2014-04-30 上海凯世通半导体有限公司 太阳能晶片掺杂方法、掺杂晶片、太阳能电池及制作方法
US9559228B2 (en) 2011-09-30 2017-01-31 Sunpower Corporation Solar cell with doped groove regions separated by ridges
US9269851B2 (en) * 2011-11-15 2016-02-23 Newsouth Innovations Pty Limited Metal contact scheme for solar cells
JP2015505161A (ja) * 2011-12-13 2015-02-16 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ 光起電力電池及びその形成方法
TWI470816B (zh) * 2011-12-28 2015-01-21 Au Optronics Corp 太陽能電池
CN103208557A (zh) * 2012-01-13 2013-07-17 上海凯世通半导体有限公司 太阳能电池的制作方法及太阳能电池
CN103325666A (zh) * 2012-03-21 2013-09-25 苏州贝克微电子有限公司 半导体晶圆掺杂扩散技术
CN102623564B (zh) * 2012-03-30 2015-01-07 中山大学 一种具有激光开槽正面电极的晶体硅太阳电池的制作方法
CN102738288A (zh) * 2012-06-20 2012-10-17 常州天合光能有限公司 非晶硅钝化n型背接触电池及其制备方法
CN102832270A (zh) * 2012-08-16 2012-12-19 友达光电股份有限公司 太阳能电池及其制作方法
CN102856328B (zh) * 2012-10-10 2015-06-10 友达光电股份有限公司 太阳能电池及其制作方法
CN102881737A (zh) * 2012-10-15 2013-01-16 浙江正泰太阳能科技有限公司 体结背接触太阳能电池
CN102903775B (zh) * 2012-10-24 2014-10-22 中国科学院半导体研究所 用于聚光和激光输能的晶体硅太阳能电池结构及其制作方法
WO2014137284A1 (fr) * 2013-03-05 2014-09-12 Trina Solar Energy Development Pte Ltd Procédé de fabrication d'une cellule solaire
TW201442261A (zh) * 2013-04-30 2014-11-01 Terasolar Energy Materials Corp 矽晶太陽能電池的製造方法以及矽晶太陽能電池
CN103794679B (zh) * 2014-01-26 2016-07-06 晶澳（扬州）太阳能科技有限公司 一种背接触太阳能电池的制备方法
US20160284917A1 (en) * 2015-03-27 2016-09-29 Seung Bum Rim Passivation Layer for Solar Cells
JP6203990B1 (ja) 2016-02-26 2017-09-27 京セラ株式会社 太陽電池素子
TWI668876B (zh) * 2017-08-29 2019-08-11 柯作同 太陽能電池及其製造方法
WO2019102073A1 (fr) * 2017-11-24 2019-05-31 Aalto-Korkeakoulusäätiö Sr Structure semi-conductrice photovoltaïque
US11081606B2 (en) * 2018-12-27 2021-08-03 Solarpaint Ltd. Flexible and rollable photovoltaic cell having enhanced properties of mechanical impact absorption
US11978815B2 (en) 2018-12-27 2024-05-07 Solarpaint Ltd. Flexible photovoltaic cell, and methods and systems of producing it
KR20230088380A (ko) * 2020-10-07 2023-06-19 솔라페인트 엘티디. 유연한 태양광 패널 및 광전 디바이스와 이들을 제조하는 방법 및 시스템
CN114695594B (zh) * 2020-12-30 2024-11-15 苏州阿特斯阳光电力科技有限公司 背接触电池的制备方法及背接触电池
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CN113964223B (zh) * 2021-10-15 2023-11-10 浙江大学 一种抑制切割边缘漏电的晶体硅太阳能电池片、电池组件及制备方法
CN113964222B (zh) * 2021-10-15 2023-11-10 浙江大学 一种低漏电的晶体硅太阳能电池片、电池组件及制备方法
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CN115000214B (zh) * 2022-06-23 2024-03-29 浙江爱旭太阳能科技有限公司 一种p型太阳能电池及其制作方法、电池组件和光伏系统
CN115000247B (zh) * 2022-07-29 2022-11-04 中国华能集团清洁能源技术研究院有限公司 内部钝化的背接触perc电池片的制作方法
CN118943223A (zh) * 2024-07-24 2024-11-12 浙江爱旭太阳能科技有限公司 一种太阳能电池、电池组件及光伏系统

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US4703553A (en) * 1986-06-16 1987-11-03 Spectrolab, Inc. Drive through doping process for manufacturing low back surface recombination solar cells
US4838952A (en) * 1988-04-29 1989-06-13 Spectrolab, Inc. Controlled reflectance solar cell
US5053083A (en) * 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
KR100378343B1 (ko) * 1996-01-09 2003-07-18 삼성전자주식회사 후면 함몰전극형 태양전지
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Also Published As

Publication number Publication date
GB2466342A (en) 2010-06-23
GB0919795D0 (en) 2009-12-30
US20110214721A1 (en) 2011-09-08
GB2466342B (en) 2013-07-17
GB0820684D0 (en) 2008-12-17
JP5503668B2 (ja) 2014-05-28
EP2356687B1 (fr) 2016-10-12
CN102246324B (zh) 2015-07-29
EP2356687A2 (fr) 2011-08-17
US8889462B2 (en) 2014-11-18
KR101561682B1 (ko) 2015-10-20
WO2010055346A2 (fr) 2010-05-20
JP2012508473A (ja) 2012-04-05
CN102246324A (zh) 2011-11-16
KR20110097827A (ko) 2011-08-31

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