WO2010120372A3 - Procédés et dispositifs semi-conducteurs électroluminescents - Google Patents

Procédés et dispositifs semi-conducteurs électroluminescents Download PDF

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Publication number
WO2010120372A3
WO2010120372A3 PCT/US2010/001133 US2010001133W WO2010120372A3 WO 2010120372 A3 WO2010120372 A3 WO 2010120372A3 US 2010001133 W US2010001133 W US 2010001133W WO 2010120372 A3 WO2010120372 A3 WO 2010120372A3
Authority
WO
WIPO (PCT)
Prior art keywords
region
base
drain
emitter
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/001133
Other languages
English (en)
Other versions
WO2010120372A2 (fr
Inventor
Gabriel Walter
Milton Feng
Nick Holonyak
Han Wui Then
Chao-Hsin Wu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Quantum Electro Opto Systems Sdn Bhd
University of Illinois at Urbana Champaign
University of Illinois System
Original Assignee
Quantum Electro Opto Systems Sdn Bhd
University of Illinois at Urbana Champaign
University of Illinois System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantum Electro Opto Systems Sdn Bhd, University of Illinois at Urbana Champaign, University of Illinois System filed Critical Quantum Electro Opto Systems Sdn Bhd
Priority to CA2758595A priority Critical patent/CA2758595A1/fr
Priority to JP2012505890A priority patent/JP5789597B2/ja
Priority to CN201080016839.4A priority patent/CN102396121B/zh
Priority to EP10764775A priority patent/EP2419975A2/fr
Priority to AU2010237044A priority patent/AU2010237044B2/en
Publication of WO2010120372A2 publication Critical patent/WO2010120372A2/fr
Publication of WO2010120372A3 publication Critical patent/WO2010120372A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0035—Simulations of laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

L'invention concerne un procédé de production d'émission de lumière à partir d'un dispositif semi-conducteur à deux bornes avec une efficacité améliorée comprend les étapes suivantes : l'utilisation d'une structure semi-conductrice en couches comprenant une région de drain semi-conducteur comprenant au moins une couche de drain, une région de base semi-conductrice disposée sur la région de drain et comprenant au moins une couche de base, et une région d'émetteur semi-conducteur disposée sur une partie de la région de base et comprenant un mésa émetteur qui comprend au moins une couche d'émetteur; la disposition, dans la région de base, d'au moins une région présentant des effets de taille quantiques; la disposition d'une électrode base/drain ayant une première partie d'une surface exposée de la région de base et une partie supplémentaire couplées à la région de drain, et la disposition d'une électrode émettrice sur la surface de la région d'émetteur; l'application de signaux par rapport aux électrodes base/drain et émettrice afin d'obtenir une émission de lumière à partir de la région base; et la configuration des électrodes base/drain et émettrice pour une uniformité importante de la répartition de tension dans la région située entre elles. Dans un autre mode de réalisation, une graduation latérale est utilisée pour commander la vitesse du dispositif pour un fonctionnement haute fréquence.
PCT/US2010/001133 2009-04-17 2010-04-16 Procédés et dispositifs semi-conducteurs électroluminescents Ceased WO2010120372A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CA2758595A CA2758595A1 (fr) 2009-04-17 2010-04-16 Procedes et dispositifs semi-conducteurs electroluminescents
JP2012505890A JP5789597B2 (ja) 2009-04-17 2010-04-16 発光半導体方法および素子
CN201080016839.4A CN102396121B (zh) 2009-04-17 2010-04-16 发光半导体方法和装置
EP10764775A EP2419975A2 (fr) 2009-04-17 2010-04-16 Procédés et dispositifs semi-conducteurs électroluminescents
AU2010237044A AU2010237044B2 (en) 2009-04-17 2010-04-16 Light emitting semiconductor methods and devices

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US21295109P 2009-04-17 2009-04-17
US61/212,951 2009-04-17
US26811909P 2009-06-09 2009-06-09
US61/268,119 2009-06-09

Publications (2)

Publication Number Publication Date
WO2010120372A2 WO2010120372A2 (fr) 2010-10-21
WO2010120372A3 true WO2010120372A3 (fr) 2011-01-27

Family

ID=42983053

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/001133 Ceased WO2010120372A2 (fr) 2009-04-17 2010-04-16 Procédés et dispositifs semi-conducteurs électroluminescents

Country Status (8)

Country Link
EP (1) EP2419975A2 (fr)
JP (1) JP5789597B2 (fr)
KR (1) KR20120008055A (fr)
CN (2) CN104201564A (fr)
AU (1) AU2010237044B2 (fr)
CA (1) CA2758595A1 (fr)
TW (1) TW201101530A (fr)
WO (1) WO2010120372A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456873A (zh) * 2012-06-01 2013-12-18 李学旻 发光二极管元件
WO2014022724A1 (fr) * 2012-08-02 2014-02-06 Quantum Electro Opto Systems Sdn. Bhd. Dispositifs et procédés de charge orientée à double mode
CN105633227B (zh) * 2015-12-29 2018-04-17 华南师范大学 高速调制发光二极管及其制造方法
CN105655454B (zh) * 2015-12-29 2018-05-08 华南师范大学 高调制发光二极管及其制备方法
JP7216270B2 (ja) * 2018-09-28 2023-02-01 日亜化学工業株式会社 半導体発光素子
CN113206448B (zh) * 2021-04-30 2023-04-07 中国科学院半导体研究所 一种具有电流阻挡层的激光器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176367A (en) * 1977-03-23 1979-11-27 Tokyo Shibaura Electric Co., Ltd. Semiconductor optical device
US5796714A (en) * 1994-09-28 1998-08-18 Matsushita Electric Industrial Co., Ltd. Optical module having a vertical-cavity surface-emitting laser
US20050040387A1 (en) * 2003-08-22 2005-02-24 The Board Of Trustees Of The University Of Illinois Semiconductor method and device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461482A (en) * 1977-10-26 1979-05-17 Nec Corp Power rectifier of low loss and high speed switching
US4513423A (en) * 1982-06-04 1985-04-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Arrangement for damping the resonance in a laser diode
JPS61231788A (ja) * 1985-04-08 1986-10-16 Matsushita Electric Ind Co Ltd 半導体発光素子
JPS61270885A (ja) * 1985-05-24 1986-12-01 Matsushita Electric Ind Co Ltd 半導体発光素子
JP2003249678A (ja) * 2000-07-04 2003-09-05 Matsushita Electric Ind Co Ltd 半導体発光素子及びその駆動装置
KR100660691B1 (ko) * 2002-03-25 2006-12-21 가부시끼가이샤 에키쇼 센탄 기쥬츠 가이하쯔 센터 박막 트랜지스터, 회로장치, 액정 디스플레이, 반도체장치 및 그 제조방법
US7354780B2 (en) * 2003-08-22 2008-04-08 The Board Of Trustees Of The University Of Illinois Semiconductor light emitting devices and methods
JP2008508730A (ja) * 2004-07-30 2008-03-21 ノバラックス，インコーポレイティド 面発光レーザのアレイを接合部分離するための装置、システム、および方法
CN101238619A (zh) * 2005-02-28 2008-08-06 伊利诺斯大学理事会 半导体双极发光和激光装置及方法
JP2007096160A (ja) * 2005-09-30 2007-04-12 Oki Data Corp 半導体複合装置、及びこれらを用いたプリントヘッド並びに画像形成装置。
US7535034B2 (en) * 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
EP2386132A2 (fr) * 2009-01-08 2011-11-16 The Board Of Trustees Of The University Of Illinois Dispositifs semi-conducteurs émetteurs de lumière et à effet laser et procédés

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176367A (en) * 1977-03-23 1979-11-27 Tokyo Shibaura Electric Co., Ltd. Semiconductor optical device
US5796714A (en) * 1994-09-28 1998-08-18 Matsushita Electric Industrial Co., Ltd. Optical module having a vertical-cavity surface-emitting laser
US20050040387A1 (en) * 2003-08-22 2005-02-24 The Board Of Trustees Of The University Of Illinois Semiconductor method and device

Also Published As

Publication number Publication date
JP2012524398A (ja) 2012-10-11
AU2010237044A1 (en) 2011-12-01
CN102396121B (zh) 2014-08-20
CN102396121A (zh) 2012-03-28
KR20120008055A (ko) 2012-01-25
CA2758595A1 (fr) 2010-10-21
AU2010237044B2 (en) 2014-11-06
CN104201564A (zh) 2014-12-10
EP2419975A2 (fr) 2012-02-22
JP5789597B2 (ja) 2015-10-07
TW201101530A (en) 2011-01-01
WO2010120372A2 (fr) 2010-10-21

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