WO2010133220A2 - Procédé et dispositif permettant le traitement électrolytique commandé de couches minces - Google Patents

Procédé et dispositif permettant le traitement électrolytique commandé de couches minces Download PDF

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Publication number
WO2010133220A2
WO2010133220A2 PCT/DE2010/000592 DE2010000592W WO2010133220A2 WO 2010133220 A2 WO2010133220 A2 WO 2010133220A2 DE 2010000592 W DE2010000592 W DE 2010000592W WO 2010133220 A2 WO2010133220 A2 WO 2010133220A2
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WO
WIPO (PCT)
Prior art keywords
partial
electrolytic
current
electroplating
cathode
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/DE2010/000592
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German (de)
English (en)
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WO2010133220A3 (fr
Inventor
Egon Hübel
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Individual
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Individual
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Application filed by Individual filed Critical Individual
Priority to US13/320,981 priority Critical patent/US20120061244A1/en
Priority to CN2010800224290A priority patent/CN102459716A/zh
Priority to EP10732269A priority patent/EP2432920A2/fr
Priority to JP2012511145A priority patent/JP2012527524A/ja
Publication of WO2010133220A2 publication Critical patent/WO2010133220A2/fr
Publication of WO2010133220A3 publication Critical patent/WO2010133220A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002—Cell separation, e.g. membranes, diaphragms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/005—Contacting devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer

Definitions

  • the invention relates to the electrochemical metallization and demetallization of thin and therefore high-resistance layers on substrates. It is particularly suitable for electroplating z. B. seed layers or seed layers on wafers.
  • horizontal or vertical electroplating cells serve as so-called cup plater, in which the non-treated back side of the wafer is kept dry or covered.
  • the starting layers consist for. B. sputtered copper with a thickness of z. B. 0.1 microns.
  • For economical galvanizing they should be using a large current density of z. B. 1 A / dm 2 or more are galvanized.
  • the achieved layer thickness distribution over the entire surface of the material should have the smallest possible tolerance.
  • the cathodic Galvanisierstrom can be fed into the material, ie in the wafer only from the edge, if the center should not be used for further electrical contact.
  • the initial high-resistance starting layer causes the galvanizing on its way from the edge toward the center of the good an electrical voltage drop. Accordingly, the thickness of the electrodeposited layer decreases as the inclined plane. With increasing size of the goods, the problem of the inclined plane increases disproportionately. To remedy this deficiency, there are proven solutions.
  • the object of the invention is to describe a method and a device in which a flat layer thickness distribution is achieved on the good during electrochemical treatment, even if different initial conditions and parameters of the goods are available. In particular, it should be possible in a treatment cup or similar electrolytic work containers, even with a good with large
  • the invention provides for a division of the global electrode or anode of the cup-Platers before and that at least two electrically isolated from each other partial anodes, which are designed in each case in size and shape the same or almost the same.
  • Each preferably sector-like partial anode is fed by an associated Galvanisierstrom provoke with individual Galvanisierstrom.
  • the positive poles of the galvanizing current sources are connected to their associated partial anodes.
  • the negative poles of the galvanizing current sources are respectively connected or contacted at the edge of the material, which is remote from the partial anodes assigned to the galvanizing current sources.
  • the flat material is preferably in equal parts below or above the part anodes. In electrochemical etching, the aforementioned polarities reverse.
  • FIG. 1 shows, in cross-section, a working container as a cup for the electrolytic treatment of the underside of a round material according to the invention, for example, according to the invention.
  • FIG. 2 shows the view upwards through two partial electrodes which are located at the bottom in the working container, in the direction of the underside of the material to be treated, which is located on top of the cup.
  • FIG. 3 shows the view through four partial electrodes of the working container as a cup in the direction of the underside of the material to be treated.
  • FIG. 4 shows measurement results which were determined on a resistance model of an electrolytic cell and a cell voltage / current density characteristic curve of a copper bath based on sulfuric acid.
  • FIG. 5 shows the qualitative courses of electrodeposited layers or layer thickness distributions on the product in the case of different sizes of galvanizing streams.
  • Partial anodes, the partial cathodes or electrodes and the associated electrolytic sub-cells and the contacts on the edge of the good and the rectifier or Galvanisierstrom provoken be supplemented with one or two high strokes.
  • the cup plater in Figure 1 consists essentially of a filled with electrolyte 5 working container 4, the cup, a receptacle 8 and a holder 2 for the material to be plated in this example 1.
  • the Good 1, z.
  • electrolyte 5 flows from below through an inlet 13 by means of a demanding pump 6.
  • the electrolyte 5 passes z. From there, it flows via overflows into the collecting container 8, which is at the same time the pump sump for circulation promotion
  • the two partial anodes 7 'and 7 "are mutually opposed isolated, ie they have no electrically low-impedance connection.
  • an electrically non-conductive partition wall 14 which prevents a continuous mutual metallization and demetallization of the electrodes.
  • the material 1 arranged in a plane-parallel manner over the working container 4 extends over the entire cross-section of the working container 4.
  • the treatment side 3 of the cathodic material 1 to be electroplated, which constitutes a global cathode, also becomes fictitiously divided into two partial regions, namely the partial cathodes 12 'and 12
  • the partial cathode 12 ' is initially statically opposite to the partial anode 7', as is the partial cathode 12 "of the partial anode 7."
  • the partial anodes and the partial cathodes each form electrolytic partial cells 11 'and 11 ", which together form the global electrolytic cell 11 of the cup - Form platers.
  • the partial anode 7 'shown on the left is fed anodically by the galvanizing current source 9'.
  • the negative pole of this galvanizing current source 9 ' is connected to the right edge of the wafer 1 by means of an electrical contact 10 "in the region of the partial cathode 12".
  • the negative pole of the electroplating current source 9 is connected to the left edge of the wafer 1 in the region of the partial cathode 12 ', which is perpendicular to the partial anode T.
  • grinding or rotary contacts and detachable electrical contacts 10' are used. and 10 "diametrically located on the estate.
  • the electrical circuit of the Galvanisierstrom provoken 9 'and 9 and the location of the participating resources shown in Figure 2. In this, the view is shown from below through the part anodes 7' and 7" in the direction of the wafer.
  • the partial anode 7 ' is fed by a rectifier or a Galvanisierstrom provoke 9' and forms together with the sub-cathode 12 below 'the not visible in this figure electrolytic sub-cell 11'.
  • the partial anode 7 " is fed by a rectifier or a galvanizing current source 9" and forms together with the sub-cathode 12 located underneath "the electrolytic sub-cell 11".
  • the one or more electrical contacts 10 ' In the edge region of the cathodic material on the partial cathode 12 'and thus in the electrolytic partial cell 11' is the one or more electrical contacts 10 '.
  • the edge region of the cathodic material on the partial cathode 12 "and thus in the electrolytic partial cell 11" are the one or more electrical contacts 10 ".
  • the galvanizing circuit of the rectifier 9 ' is transferred via the partial anode 7', the left-hand electrolytic partial cell 11 ', the partial cathode 12' of the cathodic material 1 and from there through the base layer of the partial cathode 12 "of the product 1
  • the electroplating circuit of the rectifier 9 via the partial anode 7", the right electrolytic subcell 11 ", the partial cathode 12" of the cathodic material 1 and from there through the base layer of the partial cathode 12 'of the material 1 over
  • the partial cathode 12 'of the product with the base layer thereon thus serves as an electrical conductor for the cathodic current to the electrolytic partial cell 11 ".
  • the partial cathode 12 "of the material with the base layer thereon serves accordingly as an electrical conductor for the cathodic current to the electrolytic partial cell 11 '.
  • the first limiting case exists when only one of the two rectifiers is switched on for the duration t.
  • the respective two rectifiers 9 ', 9 "of the two sides or partial cathodes 12', 12" of the product, which form a rectifier pair, are switched on alternately.
  • the duty cycle 1 1 of the rectifier of the one side 12 'and the duty cycle 1 2 of the rectifier of the other side 12 are preferably the same size.
  • the second limiting case consists in at the same time with the same current I switched rectifiers 9 ', 9 "of a rectifier pair of the two partial anodes 7', 7".
  • the rectifier 9 is switched off for a certain time t.
  • the rectifier 9 "feeds the electrolytic subcell 11".
  • the feeding of the cathodic galvanizing current I to the partial cathode 12 "of the electrolytic partial cell 11” takes place solely from the contact 10 'or from the contact region 10' and from there through the base layer of the partial cathode 12 '.
  • the electrical voltage drop in the base layer then increases from the middle of the material, starting towards the edge diametrically opposite the feeding contact 10 ', thus increasing the locally effective cell voltage and the current density towards that edge
  • the rectifier 9 " for the preferred same time t off and the rectifier 9 'is turned on to power the subcell 12'.
  • the galvanic deposition on the two partial cathodes 12 'and 12 "of the product 1 takes place one after the other with an equally long exposure time, wherein the valleys of the metallization surprisingly occur at the edges over which the current was fed.
  • the state of the art can be cost-effectively leveled out with very simple control measures, as will be described below: According to the prior art, the mountains of the inclined planes occur at the edges.
  • both rectifiers 9 'and 9 are simultaneously switched on with currents I of the same magnitude, then the currents I and the voltage drops in the partial cathodes are completely symmetrical, and the same current I flows from both edges to the center of the material Trap affects the respective electrical conductor in the base layer or the symmetrical voltage drop occurring there in such a way that a valley of the metallization occurs in the middle of the goods.
  • the controllable galvanizing of the material 1 according to the invention takes place within these two limiting cases.
  • the layer thickness distribution can be set very precisely, ie level with the difference of the different sized galvanizing currents I in the two electrolytic partial cells 11' and 11". , which flow through them alternately and each with preferably the same time, the center area of the goods can be galvanized to the edge even or even exaggerated, although there are no contacts in the middle.
  • control technology can be reacted, in particular on different thin base layers, the thickness of the layer to be deposited and the size of the average current density.
  • control technology can be reacted, in particular on different thin base layers, the thickness of the layer to be deposited and the size of the average current density.
  • reversed polarities of the equipment for an electrolytic etching process can be reversed.
  • Partial anodes or partial electrodes via flexible electrical conductors.
  • Technically complex grinding or rotary contacts are not required.
  • the material and the partial anodes can also be made to rotate relative to each other.
  • this requires at z. B. two partial anodes a two-pole rotating power transmission to the good and / or the part anodes by means of sliding contacts 15 or rotary contacts. If there are more than two partial anodes, these sliding contacts 15 must be made even multipolar. Therefore, the lower cost swinging movement of the material and / or the part anodes around the vertical axis passing through the center of the working container 4 is preferable.
  • Another control means for leveling the deposited layer consists in the non-linear pivotal or rotational movement of the material or the partial anodes. This means that the pivoting or rotational speed can be carried out at different relative positions of good and partial anodes of different sizes
  • the contacts 10 of a pair of electrodes can feed the Galvanisierstrom each punctiform or over a limited circular arc in the estate at the diametrical edge. With increasing arc length, the edge regions of the wafer are preferably galvanized. This is a further, but not electrically controllable means for leveling the deposited layer is given.
  • the part anodes by means of at least one electrical switching contact 16 as z. B. relay contact electrically low be connected to each other.
  • the electrolytic sub-cells behave like a global electrolytic cell according to the prior art, in which, in particular for thin layers to be plated, the edge regions are preferably metallized.
  • This can be z. B. be used towards the end of the exposure time for leveling when the starting layer has been electrochemically treated by the method according to the invention with preference to the center region.
  • z. B. by means of a closed switching contact 16, the treatment can be started and then the leveling of the excessive edge area by raising the center area by means of the above-described inventive measures. Both methods can also alternate several times during a treatment.
  • FIG. 3 shows four partial anodes 7 ', 7 “, 7'” and 7 “” with four individual electroplating current sources 9 ', 9 “, 9'” and 9 “”. Again, the cathodic currents are fed to the electrolytic sub-cells 11 ', 11 “, 11'” and 11 “” of pairs diametrically arranged contacts 10 ', 10 ", 10'” and 10 "” in the Good 1.
  • These four partial anodes increase the control possibilities for leveling the deposited layer.
  • a periodically linear or non-linear reversing pivoting of the material and / or the partial anodes for leveling the deposited metal layer is required here at least to ⁇ 45 °.
  • Technically complex sliding contacts are for
  • cathode clamping voltages corresponding to the cell voltage Uz.
  • the current density is in A / dm 2 and the cell voltages are plotted in volts.
  • the typical course of this Uz / i characteristic shows that at cell voltages Uz below 1.5 V almost no metal deposition can take place.
  • the cathodic current density i is less than 0.2 A / dm 2 here . However, this is sufficient to prevent a return of metal. In the range of the cell voltages Uz of 1.5 V to 2.5 V, the current density increases from 0.2 A / dm 2 to 7.6 A / dm 2 .
  • the family of curves of the anode / cathode voltages shows that at currents in the left electrolytic cell 11 'which are only up to 50% of the currents in the right electrolytic cell 11 ", anode / cathode voltages in the range of 1.5V or less occur. With these small anode / cathode voltages or cell voltages, virtually no deposition takes place, which means that only the right electrolytic cell 11 "is galvanized.
  • the course of the anode / cathode voltages or cell voltages can be adjusted so that a mountain or valley of the deposited layer occurs in the middle of the material. The largest mountain is at the left 0% and right 100% of the galvanizing. A valley arises in the middle of the estate at z. B. 70% left and 100% right of the galvanizing.
  • the anode / cathode voltage curve left 30% right 100% shows a nearly even curve in the right subcell 11 "The difference ⁇ 2 of the anode / cathode voltages is about 0.1 V. Accordingly, the current density difference in the right electrolytic cell 11" is about 0 , 6 A / dm 2 . This means a virtually flat metallization on this half of the estate.
  • the current is mirrored, d. H. 100% on the left side and reduced power on the right side, eg. B. 30% set.
  • the result is an almost completely planar deposition of the metal across the material.
  • z For this purpose, the electrodes 7 ', 7 "perform a reversing movement in their plane by means of a drive, this movement being superimposed on the rotating movement of the material, resulting in a repetitive displacement of the dividing line (s) between the electrodes 7', 7". from the central axis of the working container.
  • the location of the slightly different treatment is also shifted to the estate.
  • the result is a completely planar metallization or a completely uniform electrochemical etching.
  • FIG. 5 shows, schematically simplified, the courses of the inclined planes of the metallization across the product and through its center. Shown are the situations at different currents I and symbolically in percent, in each case after the steps with the times 1 1 and 1 2 and after the complete plating of the goods in the time 1 1 + 1 2.
  • the sum of the deposits on the two partial cathodes 12 'and 12 ", which took place statically, ie without relative movements of the electrodes in the times 1 1 and 1 2, is shown by the profile which is shown below in the figures 5.
  • Figure 5 a shows the limiting case with the galvanizing current sources 9 'and 9 ", which were set with the same magnitude of current I and switched on at the same time the valleys of the inclined planes are in the middle region of the material or the global cathode 12, consisting of the partial cathodes 12 ', 12 ".
  • the layer thickness differences are denoted by delta, which is maximum here.
  • FIG. 5 b shows the other limiting case in which, for the first time 1 1, only the electroplating current source 9 'is switched on to feed the subcell 11' with the partial cathode 12 'and in the subsequent time 12 only the electroplating current source 9 "to supply the
  • the mountains of the inclined planes in the middle of the material are very advantageous, and here too, the delta is maximal, because of the half exposure time compared to the case of FIG About half of the metal deposited with the same exposure time.
  • FIG. 5 c shows the situation between the two limiting cases with simultaneously switched galvanizing current sources 9 'and 9 "for the simultaneous feeding of the subcells 11' and 11", but alternately with different current intensities I.
  • These current intensities I are adjusted so that the sum of the deposits gives a flat layer.
  • the delta is zero here.
  • the leveling of the layer takes place in this illustration after two time periods, namely after 1 1 plus 1 2.
  • the figure 5 d shows an imperfect correction or leveling of the layer thicknesses in both sub-cells 11 'and 11 "of the product 1.
  • the examples show, however that individual courses of the layer thickness distribution can be achieved with the method according to the invention solely by controlling the galvanizing currents I.
  • the indicated current intensities I in percent are merely explanatory reference values.
  • the times 1 1 and 12 can be in the range of a few milliseconds. But they can also be up to half of the total exposure time required. In practice, after initial attempts, there are empirical values for the times to be set and the current intensities I of the rectifiers and other parameters. The same applies to any required rotating or pivoting movements of the electrodes.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

L'invention concerne la galvanisation d'un article (1) avec mise en contact électrique au niveau de ses bords, en particulier la galvanisation de substrats, p. ex. sous forme de tranches de silicium dans des cellules de dépôt électrolytique (cup plater). Selon l'état de la technique, une différence d'épaisseur de couche radiale est obtenue lorsque les couches de germination sont minces et lorsque l'article présente un diamètre important, l'épaisseur de couche maximale se trouvant au niveau des bords. Le but de l'invention est d'obtenir un dépôt uniforme lors de la galvanisation. A cet effet, au moins deux cellules partielles sont chacune alimentées en courant par des sources de courant de galvanisation (9', 9") réglables individuelles. La cathode partielle (12') et l'anode partielle associée (7') sont alimentées dans la zone de la cathode partielle (12") diamétralement opposée. Inversement, la cathode partielle (12") est alimentée par l'intermédiaire de la couche de base de la cathode partielle (12'). Si nécessaire, les épaisseurs de couche peuvent être nivelées notamment par des réglages en alternance différents de l'intensité du courant de galvanisation dans les deux cellules partielles et grâce à des électrodes (7, 12) tournant l'une par rapport à l'autre.
PCT/DE2010/000592 2009-05-22 2010-05-18 Procédé et dispositif permettant le traitement électrolytique commandé de couches minces Ceased WO2010133220A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/320,981 US20120061244A1 (en) 2009-05-22 2010-05-18 Method and device for the controlled electrolytic treatment of thin layers
CN2010800224290A CN102459716A (zh) 2009-05-22 2010-05-18 薄层的受控电解处理的方法和装置
EP10732269A EP2432920A2 (fr) 2009-05-22 2010-05-18 Procédé et dispositif permettant le traitement électrolytique commandé de couches minces
JP2012511145A JP2012527524A (ja) 2009-05-22 2010-05-18 薄層の制御された電解処理のための方法および装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009023769A DE102009023769A1 (de) 2009-05-22 2009-05-22 Verfahren und Vorrichtung zum gesteuerten elektrolytischen Behandeln von dünnen Schichten
DE102009023769.0 2009-05-22

Publications (2)

Publication Number Publication Date
WO2010133220A2 true WO2010133220A2 (fr) 2010-11-25
WO2010133220A3 WO2010133220A3 (fr) 2011-04-14

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PCT/DE2010/000592 Ceased WO2010133220A2 (fr) 2009-05-22 2010-05-18 Procédé et dispositif permettant le traitement électrolytique commandé de couches minces

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Country Link
US (1) US20120061244A1 (fr)
EP (1) EP2432920A2 (fr)
JP (1) JP2012527524A (fr)
CN (1) CN102459716A (fr)
DE (1) DE102009023769A1 (fr)
WO (1) WO2010133220A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019218618A (ja) * 2018-06-21 2019-12-26 株式会社荏原製作所 めっき装置、及びめっき方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11202005062SA (en) * 2016-07-13 2020-06-29 Alligant Scientific Llc Electrochemical methods, devices and compositions
CN110512248B (zh) * 2018-05-21 2022-04-12 盛美半导体设备(上海)股份有限公司 电镀设备及电镀方法
CN120020280B (zh) * 2023-11-20 2026-05-12 盛美半导体设备(上海)股份有限公司 电镀方法及电镀装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02205696A (ja) 1989-02-01 1990-08-15 Seiko Instr Inc 半導体ウエハのめっき装置
US6001235A (en) * 1997-06-23 1999-12-14 International Business Machines Corporation Rotary plater with radially distributed plating solution
US6004440A (en) * 1997-09-18 1999-12-21 Semitool, Inc. Cathode current control system for a wafer electroplating apparatus
US6497801B1 (en) 1998-07-10 2002-12-24 Semitool Inc Electroplating apparatus with segmented anode array
US6132587A (en) 1998-10-19 2000-10-17 Jorne; Jacob Uniform electroplating of wafers
JP4371494B2 (ja) * 1999-10-15 2009-11-25 日本エレクトロプレイテイング・エンジニヤース株式会社 カップ式めっき装置
US20050145499A1 (en) * 2000-06-05 2005-07-07 Applied Materials, Inc. Plating of a thin metal seed layer
JP2002115096A (ja) 2000-10-10 2002-04-19 Applied Materials Inc めっき装置
JP2002220694A (ja) * 2001-01-30 2002-08-09 Tokyo Electron Ltd メッキ処理装置、半導体装置の製造方法
WO2005124177A1 (fr) * 2004-06-16 2005-12-29 Ricardo Uk Ltd. Couplage fluidique rotatif
US7368042B2 (en) * 2004-12-30 2008-05-06 United Microelectronics Corp. Electroplating apparatus including a real-time feedback system
US7935240B2 (en) * 2005-05-25 2011-05-03 Applied Materials, Inc. Electroplating apparatus and method based on an array of anodes
JP4976120B2 (ja) * 2006-06-14 2012-07-18 日本エレクトロプレイテイング・エンジニヤース株式会社 ウェハーめっき方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019218618A (ja) * 2018-06-21 2019-12-26 株式会社荏原製作所 めっき装置、及びめっき方法
JP7182911B2 (ja) 2018-06-21 2022-12-05 株式会社荏原製作所 めっき装置、及びめっき方法

Also Published As

Publication number Publication date
US20120061244A1 (en) 2012-03-15
JP2012527524A (ja) 2012-11-08
WO2010133220A3 (fr) 2011-04-14
CN102459716A (zh) 2012-05-16
EP2432920A2 (fr) 2012-03-28
DE102009023769A1 (de) 2010-11-25

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