WO2010149432A2 - Procédé de commande d'un transistor bipolaire à grille isolée (igbt) à conduction inverse - Google Patents

Procédé de commande d'un transistor bipolaire à grille isolée (igbt) à conduction inverse Download PDF

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Publication number
WO2010149432A2
WO2010149432A2 PCT/EP2010/056687 EP2010056687W WO2010149432A2 WO 2010149432 A2 WO2010149432 A2 WO 2010149432A2 EP 2010056687 W EP2010056687 W EP 2010056687W WO 2010149432 A2 WO2010149432 A2 WO 2010149432A2
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WO
WIPO (PCT)
Prior art keywords
voltage
voltage divider
igbt
backward
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/056687
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German (de)
English (en)
Other versions
WO2010149432A3 (fr
Inventor
Hans-Günter ECKEL
Mark-Matthias Bakran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2010149432A2 publication Critical patent/WO2010149432A2/fr
Publication of WO2010149432A3 publication Critical patent/WO2010149432A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch

Definitions

  • the invention relates to a method and a device for controlling a reverse conducting IGBT.
  • RC-IGBTs Reverse Conducting IGBTs
  • An RC-IGBT differs from a conventional IGBT in that the diode function and the IGBT function are combined in one chip. This creates a power semiconductor in which the anode efficiency in the diode mode is dependent on the gate voltage. This requires a change in the drive over a conventional IGBT.
  • these backward-blocking IGBTs are each connected in anti-parallel with one diode.
  • These two conventional IGBTs of a bridge branches are controlled in such a way that during a transition from one state to another state, both IGBTs are switched off for a short time.
  • the control of these two conventional IGBTs of a bridge branch is independent of the sign of an output current. For both current directions, two semiconductors are available, which can carry an output current.
  • a reverse conducting IGBT in a diode mode i. a negative collector current flows, or in an IGBT mode, i. it flows a positive collector current, operated.
  • the gate-emitter voltage of a reverse conducting IGBT is above its threshold voltage while the current flows from the emitter to the collector (negative collector current), i. this RC-IGBT is operated in diode mode, the anode efficiency is lowered, whereby the forward voltage is increased. That is, to determine in which mode the RC-IGBT is located, an output current of a bridge branch of a voltage source inverter must be measured.
  • the invention is based on the object of specifying a driving method and a drive device, without having to modify an interface between the controller and a semiconductor-near drive.
  • an output current of a bridge branch of an inverter is not measured, but a collector-emitter voltage of a reverse-conducting IGBT to be controlled, this voltage measurement and its evaluation can be accommodated with respect to its sign on a drive device close to the semiconductor.
  • a voltage divider is electrically connected in parallel to the collector-emitter path of a reverse-conducting IGBT, the output of which is linked by means of an evaluation device to the driver circuit of a backward-conducting IGBT.
  • FIG. 1 shows a bridge branch with two RC-IGBTs and a DC voltage source of a voltage source converter
  • FIG. 2 shows a block diagram of a control of a pulse-controlled converter of a voltage intermediate circuit
  • FIG. 3 is a block diagram of a first embodiment of a device for controlling an RC
  • FIG. 5 shows a block diagram of a second embodiment of a device for controlling an RC-IGBT according to the invention, wherein in the
  • FIG. 6 shows a characteristic of a voltage divider of the device according to FIG. 5
  • FIGS. 7 and 8 each show a block diagram of a variant of the second embodiment of the drive device according to FIG.
  • the bridge Branch 2 shows a bridge branch, with 4 a DC voltage source, 6 a positive bus bar and 8 a negative bus bar. By means of these two bus bars 6 and 8, the bridge branch 2 and the DC voltage source 4 are electrically connected in parallel.
  • the bridge Branch 2 has two reverse-conducting IGBTs Tl and T2, which are electrically connected in series. A connection point of these two reverse-conducting IGBTs Tl and T2 form an AC-side output A, to which a load can be connected.
  • the DC voltage source has two capacitors 10 and 12, which are also electrically connected in series. A connection point of these two capacitors 10 and 12 forms a midpoint connection M. At these two electrically connected in series capacitors 10 and 12 is a DC voltage U d .
  • DC voltage source 4 a pulse width modulated square wave voltage U AM .
  • FIG. 2 shows a block diagram of a controller 16 of a three-phase power converter, in particular a pulse converter, a voltage source inverter, with associated semiconductor driver devices 14 of a bridge branch 2 of this three-phase converter.
  • the controller 16 generates two target control signals S ⁇ * ⁇ , S ⁇ * 2 and S ⁇ * 3 , S ⁇ * 4 and S T * 5, respectively, depending on a setpoint value, for example a speed setpoint value n *, per bridge branch 2 and S ⁇ * 6 .
  • a setpoint value for example a speed setpoint value n *, per bridge branch 2 and S ⁇ * 6 .
  • only one bridge branch 2 is represented by the three bridge branches of a three-phase power converter.
  • the two desired control signals S 1 , S 2 are each fed to a semiconductor-near drive device 14 of each reverse-conducting IGBT T 1 and T 2 of the bridge branch 2.
  • the output side is in each case an actual control signal Sn or S ⁇ 2 , with a gate of an associated backward conductive IGBTs Tl or T2 is driven.
  • the AC-side output is not designated as in FIG 1 with A but with R.
  • the two further bridge branches, each with an AC-side output of a three-phase converter, are not explicitly shown. These three bridge branches are electrically connected in parallel with the DC voltage source 4, which forms the voltage intermediate circuit of a voltage intermediate-circuit converter.
  • FIG. 3 is a schematic diagram of a first embodiment of a semiconductor-near drive device 14 with associated reverse-conducting IGBT T1 according to the invention.
  • This semiconductor-near drive device 14 has a voltage divider 24, an evaluation device 18 and a driver circuit 20.
  • the voltage divider 24 is electrically connected in parallel with the collector-emitter path of the reverse conducting IGBT Tl.
  • An output terminal 22 of the voltage divider 24 is connected to an input terminal 26 of the evaluation device 18.
  • this evaluation device 18 is connected to an input of the driver circuit 20, which is connected on the output side to the gate of the RC-IGBTs T1.
  • the voltage divider 24 consists of a series circuit of three resistors Rl, R2 and R3 or in general three impedances.
  • connection point of the two resistors Rl and R2 form the output terminal 22 of the voltage divider 24.
  • two diodes 28 and 30 are connected, the diode 28 on the anode side and the diode 30 are connected to the cathode side with this connection point.
  • a terminal voltage U da mp referred to the potential of the emitter of the RC-IGBTs Tl, which is also referred to as Brenzungsschreib on.
  • the potential of the emitter of the RC-IGBT T1 is also referred to as the reference potential of the semiconductor-near drive device 14.
  • the voltage divider 24 receives a limited measuring range on both sides.
  • a determined measuring voltage u M is applied , which is fed to the downstream evaluation device 18.
  • this evaluation device 18 is also supplied with a reference voltage u R.
  • This evaluation device 18 generates an actual control signal S T i for the reverse-conducting IGBT T1 in dependence on a sign of the determined measurement voltage u M and the desired control signal S ⁇ * ⁇ .
  • this actual control signal S becomes T i generates a gate voltage.
  • the reference voltage u R is used.
  • This reference voltage u R has, for example, the value OV.
  • the determined measuring voltage u M is checked to see whether it is greater or smaller than the predetermined reference voltage u R. The result is the sign of the determined measuring voltage u M.
  • the switching state of the actual control signal S T i of the reverse-conducting IGBT T 1 to be controlled is determined as a function of the switching state of the associated desired control signal S n * and of the determined sign of the determined measuring voltage u M.
  • the measurement of the collector-emitter voltage U CE of the to be controlled backward conductive IGBTs Tl on the semiconductor drive device 14 is carried out in many cases, this collector-emitter voltage U CE
  • the measurement of the collector-emitter voltage U CE must have a positive value of a few volts from a negative value of a few volts can distinguish.
  • the measurement is facilitated by a voltage range -0, 7V ⁇ U CE ⁇ +0, 7V for the collector-emitter voltage U CE only at such small currents occurs that it can be assumed that the current in this voltage range is approximately zero.
  • the value of the maximum positive collector-emitter voltage U CE will approximately correspond to the value of the reverse voltage of the RC-IGBT Tl.
  • the value of the maximum collector-emitter voltage U CE is larger than the value of a forward voltage of this RC-IGBT T1 by more than two orders of magnitude.
  • the requirements for resolution and accuracy of the collector-emitter voltage measurement are high.
  • the magnification is increased, which simplifies the sufficiently accurate measurement of the forward voltage. Since only the sign of a determined measuring voltage u M is required for the generation of an actual control signal S T i, the limitation of the measuring range is permissible.
  • FIG. 4 shows a characteristic curve of the voltage divider 24, which has a measuring range bounding on both sides.
  • the limit value is determined as a function of the resistances R 1, R 2 and R 3 of the voltage divider 24 and a supplied clamping voltage u c i a mp.
  • the positive terminal and the negative voltage input Udamp terminal voltage u i c a m p can also have un ⁇ ter Kunststofferie values.
  • FIG. 5 illustrates a basic circuit diagram of a semiconductor-near control device 14 which has a voltage divider 32 which has an asymmetrically limited measuring range. Opposite the voltage divider 24 of FIG 3 has been dispensed with the voltage divider 32 to the diode 30. An associated characteristic curve is shown in FIG.
  • the asymmetrically limited voltage divider 32 is provided instead of a diode 28 with a Zener diode 34, the cathode side with the connection point of the two resistors R2 and R3 and on the anode side with the emitter terminal E of the backward conductive IGBT Tl is electrically connected.
  • the zener voltage u z of this zener diode 34 determines the value of the asymmetric limit.
  • FIG 8 shows a block diagram of a further variant of the semiconductor-near drive device 14 is shown.
  • This variant differs from the variant according to FIGS. 5 and 7 in that, instead of a voltage divider 32 bounded on one side, a decoupling circuit 36 is provided.
  • This uncoupling circuit 36 has at least one high-voltage diode 38. If several high-voltage diodes 38 are used, they are electrically connected in series.
  • this uncoupling circuit 36 has a voltage source 40 with series resistor 42 and a voltage divider 44, consisting of the resistors Rl and R2, on. The connection point of these two resistors R1 and R2 forms an output terminal 22 of the disconnection circuit 32.
  • a current source can also be used.
  • the voltage divider 44 is electrically connected in parallel with the series connection of the voltage source 40 and the series resistor 42 or electrically in parallel with a current source. This parallel connection and the high-voltage diode 38 are electrically connected in series.
  • the voltage divider 44 which in this embodiment has two ohmic resistances R 1 and R 2, can also be designed as a capacitive or ohmic-capacitive voltage divider.
  • All embodiments of the semiconductor-near drive device 14 have in common that, depending on the switching state of a desired control signal S n and a sign of a determined measurement voltage u M, an actual control signal S T i is generated semi-conductor close.
  • the actual control signal S T i in the switching state "ON" of the setpoint control signal S n and a positive measuring voltage u M, the actual control signal S T i has the switching state "ON". If, however, the sign of the determined measuring voltage u M is negative, then the actual control signal S T i has the switching state "OFF". Is the desired control signal S n in the switching state "OFF”, so is the actual control signal S T i, regardless of the sign of the determined measurement voltage u M also in the switching state "OFF".
  • this device according to the invention is part of the semiconductor-near drive device 14 one each reverse conducting IGBT Tl or T2.
  • a current flowing through a backward-conducting IGBT T1 or T2 of two RC-IGBTs T1 and T2 connected electrically in series is thus not measured directly, as a result of which the interface between the control 16 and the drive device 14 close to the semiconductor remains unchanged.

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  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

L'invention concerne un procédé et un dispositif de commande d'un transistor bipolaire à grille isolée (IGBT) à conduction inverse (T1, T2). Selon l'invention, le procédé consiste à déterminer une tension de mesure (uM) à partir d'une tension collecteur-émetteur (UCE) déterminée d'un IGBT à conduction inverse (T1, T2) à commander et, en fonction du signe de polarité de la tension de mesure (uM) déterminée et d'un état d'un signal de commande théorique ( S*T1, S*T2 ), à commander précisément cet IGBT à conduction inverse (T1, T2) si le signe est positif et si le signal de commande théorique ( S*T1, S*T2 ) se trouve à l'état "ON". On obtient ainsi un procédé permettant de commander un IGBT à conduction inverse (T1, T2) sans qu'un courant de sortie d'une branche de pont comprenant deux IGBT à conduction inverse montés électriquement en série soit directement mesuré.
PCT/EP2010/056687 2009-06-26 2010-05-17 Procédé de commande d'un transistor bipolaire à grille isolée (igbt) à conduction inverse Ceased WO2010149432A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200910030739 DE102009030739A1 (de) 2009-06-26 2009-06-26 Verfahren zur Ansteuerung eines rückwärts leitfähigen IGBT
DE102009030739.7 2009-06-26

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WO2010149432A2 true WO2010149432A2 (fr) 2010-12-29
WO2010149432A3 WO2010149432A3 (fr) 2011-07-14

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013075737A1 (fr) 2011-11-22 2013-05-30 Abb Technology Ag Circuit de commande de grille intelligent pour igbt
US9831865B2 (en) 2013-04-05 2017-11-28 Abb Schweiz Ag RC-IGBT switching pulse control

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011003938A1 (de) * 2011-02-10 2012-08-16 Siemens Aktiengesellschaft Verfahren zur Steuerung zweier elektrisch in Reihe geschalteter rückwärts leitfähiger IGBTs einer Halbbrücke
DE102011083841A1 (de) * 2011-09-30 2012-07-26 Siemens Aktiengesellschaft Verfahren und Vorrichtung zur Ansteuerung eines abschaltbaren Leistungshalbleiterschalters
DE102012203165A1 (de) * 2012-02-29 2013-08-29 Beuth Hochschule Für Technik Berlin Anordnung und verfahren zum überwachen eines elektrischen objekts

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JP2002369553A (ja) * 2001-06-07 2002-12-20 Fuji Electric Co Ltd 電力用半導体素子のゲート駆動回路
JP2008072848A (ja) * 2006-09-14 2008-03-27 Mitsubishi Electric Corp 半導体装置
DE102008045410B4 (de) * 2007-09-05 2019-07-11 Denso Corporation Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode

Non-Patent Citations (1)

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Title
M. RAHIMO; U. SCHLAPBACH; A. KOPTA; J. VOBECKY; D. SCHNEIDER; A. BASCHNAGEL: "A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability", ISPSD, 2008

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013075737A1 (fr) 2011-11-22 2013-05-30 Abb Technology Ag Circuit de commande de grille intelligent pour igbt
CN104126273A (zh) * 2011-11-22 2014-10-29 Abb技术有限公司 Igbt的智能栅极驱动器
CN104126273B (zh) * 2011-11-22 2016-09-07 Abb技术有限公司 Igbt的智能栅极驱动器
US9654085B2 (en) 2011-11-22 2017-05-16 Abb Schweiz Ag Intelligent gate driver for IGBT
US9831865B2 (en) 2013-04-05 2017-11-28 Abb Schweiz Ag RC-IGBT switching pulse control

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WO2010149432A3 (fr) 2011-07-14
DE102009030739A1 (de) 2010-12-30

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