WO2011002803A3 - Procédé et appareil pour maintenance préventive et prédictive de chambres de traitement - Google Patents

Procédé et appareil pour maintenance préventive et prédictive de chambres de traitement Download PDF

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Publication number
WO2011002803A3
WO2011002803A3 PCT/US2010/040465 US2010040465W WO2011002803A3 WO 2011002803 A3 WO2011002803 A3 WO 2011002803A3 US 2010040465 W US2010040465 W US 2010040465W WO 2011002803 A3 WO2011002803 A3 WO 2011002803A3
Authority
WO
WIPO (PCT)
Prior art keywords
data values
component wear
methods
processing chambers
preventive maintenance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/040465
Other languages
English (en)
Other versions
WO2011002803A2 (fr
Inventor
Luc Albarede
Eric Pape
Vijayakumar C. Venugopal
Brian D. Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/555,674 external-priority patent/US8983631B2/en
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to SG2011085115A priority Critical patent/SG176564A1/en
Priority to KR1020117031499A priority patent/KR101708077B1/ko
Priority to JP2012518584A priority patent/JP5599882B2/ja
Priority to CN201080028990.XA priority patent/CN102804929B/zh
Publication of WO2011002803A2 publication Critical patent/WO2011002803A2/fr
Publication of WO2011002803A3 publication Critical patent/WO2011002803A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing And Monitoring For Control Systems (AREA)
  • General Factory Administration (AREA)
  • Chemical Vapour Deposition (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
  • Complex Calculations (AREA)
  • Combined Controls Of Internal Combustion Engines (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
  • Plasma Technology (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)

Abstract

L'invention porte sur un procédé d'évaluation de l'état de santé d'une chambre de traitement. Le procédé comprend l'exécution d'un procédé. Le procédé comprend également la réception de données de traitement provenant d'un ensemble de détecteurs lors de l'exécution du procédé. Le procédé comprend en outre l'analyse des données de traitement au moyen d'un ensemble de modèles prédictifs à variables multiples. Le procédé comprend également la génération d'un ensemble de valeurs de données d'usure de composants. Le procédé comprend en outre la comparaison de l'ensemble de valeurs de données d'usure de composants avec un ensemble de domaine de seuils de vie utile. Le procédé comprend de plus la génération d'un avertissement si l'ensemble de valeurs de données d'usure de composants est en dehors de l'ensemble de domaine de seuils de vie utile.
PCT/US2010/040465 2009-06-30 2010-06-29 Procédé et appareil pour maintenance préventive et prédictive de chambres de traitement Ceased WO2011002803A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SG2011085115A SG176564A1 (en) 2009-06-30 2010-06-29 Methods and apparatus for predictive preventive maintenance of processing chambers
KR1020117031499A KR101708077B1 (ko) 2009-06-30 2010-06-29 프로세싱 챔버의 예측 예방 보전을 위한 방법 및 장치
JP2012518584A JP5599882B2 (ja) 2009-06-30 2010-06-29 処理チャンバの予測予防保全のための方法と装置
CN201080028990.XA CN102804929B (zh) 2009-06-30 2010-06-29 用于处理室的预测性预防性维护的方法和装置

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US22210209P 2009-06-30 2009-06-30
US22202409P 2009-06-30 2009-06-30
US61/222,102 2009-06-30
US61/222,024 2009-06-30
US12/555,674 US8983631B2 (en) 2009-06-30 2009-09-08 Arrangement for identifying uncontrolled events at the process module level and methods thereof
US12/555,674 2009-09-08

Publications (2)

Publication Number Publication Date
WO2011002803A2 WO2011002803A2 (fr) 2011-01-06
WO2011002803A3 true WO2011002803A3 (fr) 2011-03-03

Family

ID=43411705

Family Applications (5)

Application Number Title Priority Date Filing Date
PCT/US2010/040478 Ceased WO2011002811A2 (fr) 2009-06-30 2010-06-29 Agencement pour identification d'évènements non commandés au niveau du module de traitement et procédés liés
PCT/US2010/040456 Ceased WO2011002800A2 (fr) 2009-06-30 2010-06-29 Procédé et agencement pour surveillance et commande in-situ de processus pour des outils de traitement au plasma
PCT/US2010/040468 Ceased WO2011002804A2 (fr) 2009-06-30 2010-06-29 Procédé et appareil de prédiction de l'uniformité de la vitesse de gravure pour la qualification d'une chambre de plasma
PCT/US2010/040477 Ceased WO2011002810A2 (fr) 2009-06-30 2010-06-29 Procédé de construction d'un algorithme de points finaux optimaux
PCT/US2010/040465 Ceased WO2011002803A2 (fr) 2009-06-30 2010-06-29 Procédé et appareil pour maintenance préventive et prédictive de chambres de traitement

Family Applications Before (4)

Application Number Title Priority Date Filing Date
PCT/US2010/040478 Ceased WO2011002811A2 (fr) 2009-06-30 2010-06-29 Agencement pour identification d'évènements non commandés au niveau du module de traitement et procédés liés
PCT/US2010/040456 Ceased WO2011002800A2 (fr) 2009-06-30 2010-06-29 Procédé et agencement pour surveillance et commande in-situ de processus pour des outils de traitement au plasma
PCT/US2010/040468 Ceased WO2011002804A2 (fr) 2009-06-30 2010-06-29 Procédé et appareil de prédiction de l'uniformité de la vitesse de gravure pour la qualification d'une chambre de plasma
PCT/US2010/040477 Ceased WO2011002810A2 (fr) 2009-06-30 2010-06-29 Procédé de construction d'un algorithme de points finaux optimaux

Country Status (6)

Country Link
JP (5) JP5629770B2 (fr)
KR (5) KR101741274B1 (fr)
CN (5) CN102473590B (fr)
SG (5) SG176564A1 (fr)
TW (5) TWI484435B (fr)
WO (5) WO2011002811A2 (fr)

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WO2011002800A3 (fr) 2011-04-07
KR101708077B1 (ko) 2017-02-17
CN102474968B (zh) 2015-09-02
TW201112302A (en) 2011-04-01
WO2011002804A2 (fr) 2011-01-06
JP2012532462A (ja) 2012-12-13
KR20120037420A (ko) 2012-04-19
JP5624618B2 (ja) 2014-11-12
WO2011002811A2 (fr) 2011-01-06
WO2011002811A3 (fr) 2011-02-24
KR20120101293A (ko) 2012-09-13
CN102804353A (zh) 2012-11-28
JP2012532463A (ja) 2012-12-13
JP2012532464A (ja) 2012-12-13
TWI495970B (zh) 2015-08-11
KR101741271B1 (ko) 2017-05-29
WO2011002810A2 (fr) 2011-01-06
WO2011002810A4 (fr) 2011-06-03
KR20120037421A (ko) 2012-04-19
SG176147A1 (en) 2011-12-29
CN102473631A (zh) 2012-05-23
KR20120037419A (ko) 2012-04-19
CN102473590B (zh) 2014-11-26
CN102804353B (zh) 2015-04-15
TWI509375B (zh) 2015-11-21
TW201129936A (en) 2011-09-01
TWI536193B (zh) 2016-06-01
CN102804929A (zh) 2012-11-28
JP5629770B2 (ja) 2014-11-26
KR101708078B1 (ko) 2017-02-17
TWI484435B (zh) 2015-05-11
CN102474968A (zh) 2012-05-23
JP5599882B2 (ja) 2014-10-01
TW201108022A (en) 2011-03-01
JP2012532460A (ja) 2012-12-13
WO2011002803A2 (fr) 2011-01-06
WO2011002800A2 (fr) 2011-01-06
CN102473590A (zh) 2012-05-23
JP2012532461A (ja) 2012-12-13
SG176565A1 (en) 2012-01-30
TWI480917B (zh) 2015-04-11
WO2011002810A3 (fr) 2011-04-14
KR20120047871A (ko) 2012-05-14
SG176564A1 (en) 2012-01-30
CN102804929B (zh) 2015-11-25
JP5693573B2 (ja) 2015-04-01
KR101741272B1 (ko) 2017-05-29
SG176566A1 (en) 2012-01-30
TW201129884A (en) 2011-09-01
SG176567A1 (en) 2012-01-30
CN102473631B (zh) 2014-11-26
KR101741274B1 (ko) 2017-05-29
WO2011002804A3 (fr) 2011-03-03
TW201115288A (en) 2011-05-01

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