WO2011069605A2 - Cellules solaires épitaxiées à enveloppe traversante présentant des formes de trous réalisées longitudinalement et procédé de fabrication associé - Google Patents

Cellules solaires épitaxiées à enveloppe traversante présentant des formes de trous réalisées longitudinalement et procédé de fabrication associé Download PDF

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Publication number
WO2011069605A2
WO2011069605A2 PCT/EP2010/007161 EP2010007161W WO2011069605A2 WO 2011069605 A2 WO2011069605 A2 WO 2011069605A2 EP 2010007161 W EP2010007161 W EP 2010007161W WO 2011069605 A2 WO2011069605 A2 WO 2011069605A2
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WO
WIPO (PCT)
Prior art keywords
channel
solar cell
substrate
thin
film solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/007161
Other languages
German (de)
English (en)
Other versions
WO2011069605A3 (fr
Inventor
Stefan Reber
Emily Mitchell
Nils Brinkmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to EP10784986A priority Critical patent/EP2510548A2/fr
Priority to CN2010800563815A priority patent/CN102714253A/zh
Publication of WO2011069605A2 publication Critical patent/WO2011069605A2/fr
Publication of WO2011069605A3 publication Critical patent/WO2011069605A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/227—Arrangements for electrodes of back-contact photovoltaic cells for emitter wrap-through [EWT] photovoltaic cells, e.g. interdigitated emitter-base back-contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a thin film
  • Solar cell in particular an epitaxial wrap-through (EpiWT) solar cell, the at least one
  • Area is greater than the ratio of the circumference to the area of a circle of the same area.
  • the epitaxial wrap-through (EpiWT) solar cell is a back-contacting crystalline silicon thin film solar cell (see EJ Mitchell and S. Reber, Proceedings 33rd IEEE Photovoltaic Specialists Conference (2008), p. 510).
  • EpiWT solar cells so that the advantages of thin-film solar cells, such as. B. Reduction of the cost per watt peak by reducing the consumption of high-purity silicon material, with those of back-contact solar cells: no shading by the Vorderprintedgrid, the emitter can be optimized in terms of its blue response, the contacts can be optimized for low series resistance, simpler module interconnection and higher packing density in the module (see E. van Kerschaver and G. Beaucarne, Progress in Photovoltaics: Research and Applications 14 (2), (2006), p. 107).
  • Backside contact is achieved by placing the active layers of the solar cell on the substrate backside through holes drilled in the substrate
  • EpiWT solar cells have two additional conceptional series resistors that reduce their efficiency. These are the propagation resistance and the hole resistance (see N. Brinkmann, diploma thesis, University of Konstanz (2009)).
  • EpiWT solar cell is called propagation resistance.
  • the hole resistance is the resistance that the electrons experience when passing through the hole
  • the two additional series resistors increase the overall series resistance of the EpiWT solar cell and have a negative effect on the fill factor and the efficiency of the solar cell.
  • One way to reduce these additional resistors represents an increase in the number of holes and / or a Veraway ⁇ tion, the hole diameter is (see N. Brinkmann, supra). Both, however, provides for a reduction of the active cell area. The reduction of the active cell area leads to a reduction of the photocurrent, which in turn has a negative effect on the efficiency of the EpiWT solar cell (see N. Brinkmann, loc. Cit.). The determination of the optimal hole structure of the EpiWT solar cell is thus always a compromise between resistance and photocurrent losses.
  • a thin-film solar cell having a front side for light entry and a rear side comprising the following minimum components: a) a non-photovoltaic or non-photoactive substrate having at least one through-hole connecting the front and the back,
  • At least one emitter layer at least on
  • Parts or the entirety of the front side and parts or the entirety of the surface of the at least one through hole are deposited, whereby in the through hole, a channel is formed, c) at least one emitter contact and at least one
  • Base contact which are applied electrically isolated from each other on the back.
  • the base layer is preferably grown on the substrate, while the emitter layer is the uppermost
  • Layer of the base layer represents and by the
  • Doping process can be produced.
  • the channel contained in the solar cell thereby represents a cavity, the front with the
  • the channel is constructed so that on at least parts of the surface of a corresponding recess or through hole of the substrate of the thin-film solar cell, a photoactive base layer and a
  • Emitter layer to be grown The through-drilling of the substrate can be produced, for example, by laser drilling, but also mechanical drilling processes, or can already be introduced during the production of the substrate, while the growth of speaking photoactive layers on the surface of the substrate incl.
  • the surface of the through hole by known from the prior art
  • the photoactive layers i. the base layer and the
  • Emitter layer can be on the entire surface of the puncture or only on a part of this
  • the outline that is, the load applied to the respective side of the solar cell recess of the substrate contained ⁇ requested channels is designed so that the ratio of the circumference of the outline of at least one channel to the space enclosed by the outline of the channel surface is greater than the ratio of the circumference to the area of a circle of the same area.
  • the area of the channel ie the area of the hole formed on the front side and the back side, respectively, representing the entrance and the exit end of the channel is limited by an edge consisting of the epitaxial emitter. This edge defines the outline of the channel. According to the scope of this outline is now greater than the scope of a
  • Rear side of the substrate has a different outline from a circular shape.
  • Channels or holes could surprisingly be achieved a significant reduction of the conceptual additional series resistances and thus the efficiency of the solar cell can be significantly increased.
  • the shape of the channels which deviates from a circular shape, can be achieved in the following ways: a) A through hole having an outline which is different from a circular shape is already introduced into the substrate. The surface of this through hole is provided homogeneously, ie with the same layer thickness, with the respective photoactive layers, ie base layer and emitter layer, so that the photoactive layers conform to the basic shape of the predetermined throughbore of the substrate. The resulting channel thus has the basic shape of the through hole of the substrate. For example, an elliptical bore etc. may already be introduced into the substrate and the photoactive layers may be deposited as described above.
  • a circular through-hole is introduced into the substrate, but the layers are deposited asymmetrically on the surface of the through-hole so that, for example, Liptician or rectangular structures can be achieved.
  • this procedure is to be ⁇ reach places of the channel through more Materi ⁇ al of the respective photoactive layers, ie, base and emitter layer deposited than at other places, so that the channel, which results in this process, as one of a circular shape has different outline than the predetermined circular bore.
  • Preferred shapes of the outline of the channel provide, for example, that the channels have an ellipsoidal, rectangular, concave, convex circumference or outline or a rectangular circumference with rounded corners and / or combinations thereof.
  • Channels ie from oval holes to slits (see Fig. 3 for outlines), can dramatically reduce propagation and hole resistance, thereby increasing the efficiency of the EpiWT solar cell. This is independent of whether the outline of the channels or slots is round or square are (see Fig. 3). Also, a concave or convex expression of the channels, for example as oval holes or slots, is possible.
  • slots are more easily inserted into the substrate or wafer, for example with a chip saw. This makes EpiWT solar cells with slits easier to implement industrially than those with circular holes.
  • slot structures Another advantage of slot structures is the easier backside structuring of the cells because, for example, the adjustment of the backside structures in the application of the layers and / or the contacts, because it only needs to be adjusted in one dimension, becomes much easier.
  • a preferred embodiment of the present invention provides that the front and the back of the substrate are substantially parallel to each other and that the at least one channel is parallel to the normal of these surfaces through the substrate, ie substantially at an angle of 90 ° with respect the surface of the front or back runs.
  • the through-hole channel thus has the shortest possible connection between the front and back, whereby the resistance can be further reduced.
  • Such extending at an angle of 90 ° to the surface of the substrate channel can be generated in the following ways: a) A through hole is generated perpendicular to the sub ⁇ strat vom and followed by a uniform deposition of the photoactive layers, ie, the base and emitter layer so that a uniform layer thickness of the photoactive layers over the entire length of the through hole is achieved.
  • the thus resulting channel therefore has in the direction of the through hole everywhere a uniform layer thickness of the base and emitter layer, so that the resulting channel as well as the through hole extends 90 ° to the surface of the substrate.
  • the structuring in terms of the circular shape of the different contour of the channel can be achieved by the design described above.
  • An alternative embodiment which can also be carried out in the presence of a plurality of channels in addition to the abovementioned variant, provides that the at least one channel runs obliquely through the photoactive substrate and preferably at an angle 45 ° ⁇ - ⁇ 85 ° runs to the front and back.
  • Particularly advantageous in such an embodiment is that the photoactive
  • Emitter layer is provided. By an inclined channel thus inevitably falls z. B.
  • the aforementioned oblique channels can be produced in the following ways: a) The substrate of the solar cell becomes oblique
  • Emitter layer is provided.
  • the structuring with respect to the shape different from a circular shape takes place in the aforementioned manners and ways.
  • the channel thus generated runs obliquely through the substrate.
  • Through holes are made perpendicular to the surface in the substrate. The surface of these holes is provided in the direction of the through-hole channel asymmetrically with the base and the emitter layer by these layers are grown so that the layer thickness increases on one side of the fürboh ⁇ tion in the channel direction, for example, while it decreases on the other side.
  • the resulting channel thus preferably has the same cross-sectional area in the channel direction, but extends obliquely through the substrate as a result of the photoactive layers, which are advantageously applied in the course of a gradient.
  • An exemplary embodiment is shown in FIG.
  • the base and the emitter layer is chamfered towards the channel at least on one side of the channel (see FIG. 4).
  • This particularly preferred embodiment allows a further increased incidence of light and thus optimal utilization of the entire photoactive surface of the solar cell.
  • the contacting of the thin-film solar cell takes place completely over the back.
  • the back of the solar cell is free of the photoactive layers, ie the base and the emitter layer.
  • the contacting of the emitter takes place in that is introduced into the channel from the bottom up to a certain length of the emitter contact.
  • the contacting of the base takes place from the back.
  • the at least one photoactive base layer as well as the at least one emitter layer on parts of the rear side, wherein the layers in material connection with the corresponding layers, which in the
  • Insulation layer is introduced.
  • the insulating layer between the emitter is preferably of the n-type and between the substrate or base of the p-type.
  • At least one passivation layer is applied on the front side of the thin-film solar cell, which is preferably formed antireflective, is formed from a dielectric material and particularly preferably from a dielectric material selected from the group consisting of Si0 2 , SiC, SiN and multilayers thereof.
  • Preferred substrate materials which are suitable for the thin-film solar cell are selected from a) an electrically conductive material, in particular doped silicon, or
  • Layer is coated from an electrically conductive material.
  • Preferred materials that can be used for the photoactive base layer are semiconductors.
  • Preferred semiconductors may either be selected from the group consisting of Group IV semiconductors, Group III / V semiconductors, Group II / VI semiconductors, in particular Si, GaAs and CdTe.
  • a method for producing the aforementioned thin-film solar cell, in which at least the following method steps are carried out: a) introducing at least one through-hole into a non-photoactive substrate,
  • Advantageous process options for introducing the throughbores into the substrate are laser drilling methods or laser milling methods, but mechanical methods are also applicable, for example by means of a chip saw.
  • an insulation layer on the back side can furthermore be deposited on the front side for isolating the two contact regions from one another and / or the passivation layer.
  • FIG. 1 is a cross-sectional view schematically showing a portion of an epitaxial wrap-through solar cell composed of a non-photovoltaic substrate 1 having a plurality perpendicular to the front surface of FIG
  • This base layer 3 grew up.
  • This base layer 3 is coated over its entire surface with an emitter layer 4.
  • the coating of the substrate 1, d. H. the epitaxially grown base layer 3 and the emitter layer 4 are also grown on the surfaces of the through hole on the substrate 1, i. h., The perforation is also full surface with the base layer 3 and the
  • Emitter layer 4 the surface of the channel 2.
  • Emitter layer 4 the surface of the channel 2.
  • these contacts represent the n-contact.
  • these contacts are formed of aluminum.
  • FIG. 2 shows the circular circumference of a channel 2 described above with reference to FIG. 1, as it is present on the front side of the solar cell according to EP 2 071 632.
  • the arrows set the flowing to the channel 2, collected at the surface of the solar cell currents that are so strong in the immediate vicinity of the channel that it comes to the current crowding.
  • Fig. 3 describes preferred, according to the invention for
  • channels 2 which are ⁇ instead of the outline of the channels shown in Fig. 2 are used.
  • ellipsoidal (a), concave (b), convex (c), rectangular with rounded ends (d) and rectangular (e) outlines of channels are used, with the embodiments according to FIGS. 3a and 3b being particularly preferred are.
  • FIG. 4 is an optical micrograph of an epitaxial rap-Through solar cell is shown in a Her ⁇ position between steps, wherein Fig. 4a shows a total perspective, and Fig. 4b is an enlarged photograph of a portion by which the preferred concept of the slanting channel course be explained in more detail should.
  • the perspective of the recorded solar cell corresponds to that in FIG. 1 perspective shown.
  • the reference symbols from FIG. 1 are likewise accepted in part.
  • Shown is an epitaxial wrap-through solar cell in an intermediate manufacturing step in which a channel 2 extends obliquely through the substrate 1. Clearly visible is the 90 ° to the surface taking place the perforation of the substrate 1.
  • this solar cell has a capping on the edge of the channel 2 shown on the right, whereby the light ⁇ incidence in the channel is further increased and thereby also in the wall of the channel 2 photoactive processes in the base and the emitter layer can proceed , so that even in channel 2 itself can take place power generation.
  • the shading losses known with front-side contact solar cells can be almost completely compensated.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire à couche mince, en particulier une cellule solaire épitaxiée à enveloppe traversante qui comporte au moins un alésage débouchant. Le rapport de la circonférence du contour du ou des alésages débouchants sur la surface entourée par le contour de l'alésage débouchant est plus grand que le rapport de la circonférence sur la surface d'un cercle de même surface.
PCT/EP2010/007161 2009-12-11 2010-11-25 Cellules solaires épitaxiées à enveloppe traversante présentant des formes de trous réalisées longitudinalement et procédé de fabrication associé Ceased WO2011069605A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP10784986A EP2510548A2 (fr) 2009-12-11 2010-11-25 Cellules solaires épitaxiées à enveloppe traversante présentant des formes de trous réalisées longitudinalement et procédé de fabrication associé
CN2010800563815A CN102714253A (zh) 2009-12-11 2010-11-25 具有长条形孔的外延穿孔卷绕式太阳能电池及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009057984.2 2009-12-11
DE102009057984A DE102009057984A1 (de) 2009-12-11 2009-12-11 Epitaktische Wrap-Through-Solarzellen mit länglich ausgeprägten Lochformen sowie Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
WO2011069605A2 true WO2011069605A2 (fr) 2011-06-16
WO2011069605A3 WO2011069605A3 (fr) 2011-10-13

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PCT/EP2010/007161 Ceased WO2011069605A2 (fr) 2009-12-11 2010-11-25 Cellules solaires épitaxiées à enveloppe traversante présentant des formes de trous réalisées longitudinalement et procédé de fabrication associé

Country Status (4)

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EP (1) EP2510548A2 (fr)
CN (1) CN102714253A (fr)
DE (1) DE102009057984A1 (fr)
WO (1) WO2011069605A2 (fr)

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Publication number Priority date Publication date Assignee Title
DE102019006097A1 (de) * 2019-08-29 2021-03-04 Azur Space Solar Power Gmbh Passivierungsverfahren für ein Durchgangsloch einer Halbleiterscheibe

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2071632A1 (fr) 2007-12-14 2009-06-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Cellule solaire à couche mince et son procédé de fabrication

Family Cites Families (3)

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Publication number Priority date Publication date Assignee Title
JP4242294B2 (ja) * 2002-02-26 2009-03-25 シャープ株式会社 板状シリコンの製造方法、板状シリコン製造用基板、板状シリコン、その板状シリコンを用いた太陽電池および太陽電池モジュール
CN101443921A (zh) * 2006-03-10 2009-05-27 纳米太阳能公司 具有绝缘通孔的高效太阳能电池
DE102006027737A1 (de) * 2006-06-10 2007-12-20 Hahn-Meitner-Institut Berlin Gmbh Einseitig kontaktierte Solarzelle mit Durchkontaktierungen und Verfahren zur Herstellung

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
EP2071632A1 (fr) 2007-12-14 2009-06-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Cellule solaire à couche mince et son procédé de fabrication

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
E. VAN KERSCHAVER; G. BEAUCARNE, PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS, vol. 14, no. 2, 2006, pages 107
E.J. MITCHEL ET AL., PROCEEDINGS 24TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 2009
E.J. MITCHELL; S. REBER, PROCEEDINGS 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2008, pages 510
N. BRINKMANN, DIPLOMARBEIT, UNIVERSITÄT KONSTANZ, 2009
S. SCHMICH; PH.D. THESIS, UNIVERSITÄT KONSTANZ, 2008

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Publication number Publication date
CN102714253A (zh) 2012-10-03
EP2510548A2 (fr) 2012-10-17
DE102009057984A1 (de) 2011-06-16
WO2011069605A3 (fr) 2011-10-13

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