WO2011120060A3 - Hochtemperaturbeständige, elektrisch leitfähige dünnschichten - Google Patents

Hochtemperaturbeständige, elektrisch leitfähige dünnschichten Download PDF

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Publication number
WO2011120060A3
WO2011120060A3 PCT/AT2011/000124 AT2011000124W WO2011120060A3 WO 2011120060 A3 WO2011120060 A3 WO 2011120060A3 AT 2011000124 W AT2011000124 W AT 2011000124W WO 2011120060 A3 WO2011120060 A3 WO 2011120060A3
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WO
WIPO (PCT)
Prior art keywords
aluminium
electrically conductive
films
conductive metal
aluminium oxides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/AT2011/000124
Other languages
English (en)
French (fr)
Other versions
WO2011120060A2 (de
Inventor
Jochen Bardong
Gudrun Bruckner
Rene Fachberger
Bert Wall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTR Carinthian Tech Research AG
Microchip Frequency Technology GmbH
Original Assignee
CTR Carinthian Tech Research AG
Vectron International GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CTR Carinthian Tech Research AG, Vectron International GmbH filed Critical CTR Carinthian Tech Research AG
Priority to RU2012145889/07A priority Critical patent/RU2562239C2/ru
Priority to US13/634,588 priority patent/US9117567B2/en
Priority to EP11715149.8A priority patent/EP2553687B1/de
Publication of WO2011120060A2 publication Critical patent/WO2011120060A2/de
Publication of WO2011120060A3 publication Critical patent/WO2011120060A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)

Abstract

In einer Reihe technischer Anwendungen, wie beispielsweise akustischen Oberflächenwellenelementen, sind elektrisch leitfähige Dünnschichtmetallisierungen mit Dauereinsatztemperaturen von 300°C und mehr von hohem praktischem Interesse. Dem Einsatz von Standardschichten stehen dabei technische Gründe ebenso entgegen wie ein hoher Produktionsaufwand. Um hier Abhilfe zu schaffen wird erfindungsgemäß vorgeschlagen, aus einem Gemisch eines hochschmelzenden Leitmetalls und Aluminiumoxiden bestehende Schichten zu verwenden, wobei insbesondere Aluminium-reiche, nicht-stöchiometrische Aluminiumoxide verwendet werden. Die Aluminiumoxide fungieren dabei als die Leitmetallschicht thermisch stabilisierende Komponenten; ein optionaler Anteil an chemisch verfügbarem Aluminium kann zudem mit dem Leitmetall legieren und ermöglicht dadurch, wesentliche Schichteigenschaften, wie beispielsweise die elektrische Leitfähigkeit, gezielt zu beeinflussen. Dadurch ist es möglich, unter Verwendung von Standardmaterialien und -methoden der Dünnschichtabscheidung elektrisch gut leitfähige, thermisch belastbare Schichten mit guter Strukturierbarkeit und vergleichsweise geringer Dichte für eine Vielzahl unterschiedlicher Anwendungen kostengünstig herzustellen.
PCT/AT2011/000124 2010-03-29 2011-03-10 Hochtemperaturbeständige, elektrisch leitfähige dünnschichten Ceased WO2011120060A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
RU2012145889/07A RU2562239C2 (ru) 2010-03-29 2011-03-10 Электропроводные тонкие пленки с высокой термостойкостью
US13/634,588 US9117567B2 (en) 2010-03-29 2011-03-10 High temperature-resistant, electrically conductive thin films
EP11715149.8A EP2553687B1 (de) 2010-03-29 2011-03-10 Hochtemperaturbeständige, elektrisch leitfähige dünnschichten

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT0050210A AT509633A1 (de) 2010-03-29 2010-03-29 Hochtemperaturbeständige, elektrisch leitfähige dünnschichten
ATA502/2010 2010-03-29

Publications (2)

Publication Number Publication Date
WO2011120060A2 WO2011120060A2 (de) 2011-10-06
WO2011120060A3 true WO2011120060A3 (de) 2011-12-01

Family

ID=44148781

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/AT2011/000124 Ceased WO2011120060A2 (de) 2010-03-29 2011-03-10 Hochtemperaturbeständige, elektrisch leitfähige dünnschichten

Country Status (6)

Country Link
US (1) US9117567B2 (de)
EP (1) EP2553687B1 (de)
AT (2) AT509633A1 (de)
RU (1) RU2562239C2 (de)
TW (1) TWI543196B (de)
WO (1) WO2011120060A2 (de)

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WO2016060072A1 (ja) * 2014-10-17 2016-04-21 株式会社村田製作所 圧電デバイス、圧電デバイスの製造方法
US10333494B2 (en) 2014-12-24 2019-06-25 Qorvo Us, Inc. Simplified acoustic RF resonator parallel capacitance compensation
US10581156B2 (en) 2016-05-04 2020-03-03 Qorvo Us, Inc. Compensation circuit to mitigate antenna-to-antenna coupling
US10581403B2 (en) * 2016-07-11 2020-03-03 Qorvo Us, Inc. Device having a titanium-alloyed surface
US11050412B2 (en) 2016-09-09 2021-06-29 Qorvo Us, Inc. Acoustic filter using acoustic coupling
US11165413B2 (en) 2017-01-30 2021-11-02 Qorvo Us, Inc. Coupled resonator structure
US11165412B2 (en) 2017-01-30 2021-11-02 Qorvo Us, Inc. Zero-output coupled resonator filter and related radio frequency filter circuit
JP2018182615A (ja) * 2017-04-18 2018-11-15 株式会社村田製作所 弾性波装置
US10873318B2 (en) 2017-06-08 2020-12-22 Qorvo Us, Inc. Filter circuits having acoustic wave resonators in a transversal configuration
US11152913B2 (en) 2018-03-28 2021-10-19 Qorvo Us, Inc. Bulk acoustic wave (BAW) resonator
CN109754055B (zh) * 2018-12-31 2024-12-17 上海仪电特镭宝信息科技有限公司 一种硅胶封装的耐高温标签
CN109881152B (zh) * 2019-03-05 2023-04-28 深圳市烈变科技有限公司 一种多层结构的导电膜及制备工艺
US11146247B2 (en) 2019-07-25 2021-10-12 Qorvo Us, Inc. Stacked crystal filter structures
US11757430B2 (en) 2020-01-07 2023-09-12 Qorvo Us, Inc. Acoustic filter circuit for noise suppression outside resonance frequency
US11146246B2 (en) 2020-01-13 2021-10-12 Qorvo Us, Inc. Phase shift structures for acoustic resonators
US11146245B2 (en) 2020-01-13 2021-10-12 Qorvo Us, Inc. Mode suppression in acoustic resonators
US11632097B2 (en) 2020-11-04 2023-04-18 Qorvo Us, Inc. Coupled resonator filter device
US11575363B2 (en) 2021-01-19 2023-02-07 Qorvo Us, Inc. Hybrid bulk acoustic wave filter
US12170515B2 (en) 2022-01-31 2024-12-17 Qorvo Us, Inc. Reversed semilattice filter
US12587172B2 (en) 2023-03-15 2026-03-24 Qorvo Us, Inc. Pin reconfigurable baw filters

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EP0306270A1 (de) * 1987-08-31 1989-03-08 Ferro Corporation Dickfilm-Leiterzusammensetzungen zur Verwendung mit einem Aluminiumnitrid-Substrat
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EP0306270A1 (de) * 1987-08-31 1989-03-08 Ferro Corporation Dickfilm-Leiterzusammensetzungen zur Verwendung mit einem Aluminiumnitrid-Substrat
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Also Published As

Publication number Publication date
TW201140612A (en) 2011-11-16
AT12768U1 (de) 2012-11-15
US20130033150A1 (en) 2013-02-07
AT509633A1 (de) 2011-10-15
RU2562239C2 (ru) 2015-09-10
WO2011120060A2 (de) 2011-10-06
EP2553687A2 (de) 2013-02-06
US9117567B2 (en) 2015-08-25
EP2553687B1 (de) 2015-06-10
TWI543196B (zh) 2016-07-21
RU2012145889A (ru) 2014-05-10

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