WO2011121561A1 - Matériau thermoélectrique de puits quantique à super-réseau multicouche et module - Google Patents

Matériau thermoélectrique de puits quantique à super-réseau multicouche et module Download PDF

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Publication number
WO2011121561A1
WO2011121561A1 PCT/IB2011/051375 IB2011051375W WO2011121561A1 WO 2011121561 A1 WO2011121561 A1 WO 2011121561A1 IB 2011051375 W IB2011051375 W IB 2011051375W WO 2011121561 A1 WO2011121561 A1 WO 2011121561A1
Authority
WO
WIPO (PCT)
Prior art keywords
thermoelectric
legs
layers
layer
alternating layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2011/051375
Other languages
English (en)
Inventor
Frank Haass
Norbert B. Elsner
Saed Ghamaty
Daniel Krommenhoek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF China Co Ltd
BASF SE
Hi Z Technology Inc
Original Assignee
BASF China Co Ltd
BASF SE
Hi Z Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF China Co Ltd, BASF SE, Hi Z Technology Inc filed Critical BASF China Co Ltd
Publication of WO2011121561A1 publication Critical patent/WO2011121561A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material

Definitions

  • the alternating layers are electrically conducting layers and insulating (barrier) layers.
  • the surface structure of the substrates needs not be crystalline. Preferably, it has a crystallographic match to the layers deposited onto the substrate. This crystallographic match leads to a good adhesion of the layers deposited on the substrate.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention concerne un matériau thermoélectrique de puits quantique à super-réseau multicouche qui comprend au moins 10 couches alternées et dont l'épaisseur de chaque couche est inférieure à 50 nm, les couches alternées étant des couches électriquement conductrices et barrières, la structure de couche ne présentant aucune inter-diffusion discernable qui entraîne une désintégration ou une dissolution des limites de couche lors du traitement thermique à une température située dans la plage allant de 50 à 150 °C pendant une période d'au moins 100 heures, et la concentration en matériaux de dopage dans les couches conductrices va de 1018 à 1023 cm-3, et dans les couches barrières, va de 1013 à 1018 cm-3.
PCT/IB2011/051375 2010-04-01 2011-03-31 Matériau thermoélectrique de puits quantique à super-réseau multicouche et module Ceased WO2011121561A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10158928.1 2010-04-01
EP10158928 2010-04-01

Publications (1)

Publication Number Publication Date
WO2011121561A1 true WO2011121561A1 (fr) 2011-10-06

Family

ID=44711411

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2011/051375 Ceased WO2011121561A1 (fr) 2010-04-01 2011-03-31 Matériau thermoélectrique de puits quantique à super-réseau multicouche et module

Country Status (1)

Country Link
WO (1) WO2011121561A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6384312B1 (en) * 2000-12-07 2002-05-07 International Business Machines Corporation Thermoelectric coolers with enhanced structured interfaces
US6627809B1 (en) * 1999-11-10 2003-09-30 Massachusetts Institute Of Technology Superlattice structures having selected carrier pockets and related methods
US20050028857A1 (en) * 2001-12-12 2005-02-10 Saeid Ghamaty Thermoelectric module with Si/SiC and B4C/B9C super-lattice legs
US20060144052A1 (en) * 2005-01-06 2006-07-06 Caterpillar Inc Thermoelectric heat exchange element
US20070095379A1 (en) * 2005-10-31 2007-05-03 Taher Mahmoud A Thermoelectric generator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6627809B1 (en) * 1999-11-10 2003-09-30 Massachusetts Institute Of Technology Superlattice structures having selected carrier pockets and related methods
US6384312B1 (en) * 2000-12-07 2002-05-07 International Business Machines Corporation Thermoelectric coolers with enhanced structured interfaces
US20050028857A1 (en) * 2001-12-12 2005-02-10 Saeid Ghamaty Thermoelectric module with Si/SiC and B4C/B9C super-lattice legs
US20060144052A1 (en) * 2005-01-06 2006-07-06 Caterpillar Inc Thermoelectric heat exchange element
US20070095379A1 (en) * 2005-10-31 2007-05-03 Taher Mahmoud A Thermoelectric generator

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