WO2011134700A3 - Solarzelle - Google Patents

Solarzelle Download PDF

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Publication number
WO2011134700A3
WO2011134700A3 PCT/EP2011/052954 EP2011052954W WO2011134700A3 WO 2011134700 A3 WO2011134700 A3 WO 2011134700A3 EP 2011052954 W EP2011052954 W EP 2011052954W WO 2011134700 A3 WO2011134700 A3 WO 2011134700A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal layer
solar cell
openings
layer
passivation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2011/052954
Other languages
English (en)
French (fr)
Other versions
WO2011134700A2 (de
Inventor
Hans-Joachim Krokoszinski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to KR1020127030801A priority Critical patent/KR20130073900A/ko
Priority to US13/643,648 priority patent/US9209321B2/en
Priority to CN201180020871.4A priority patent/CN102893406B/zh
Priority to EP11705887.5A priority patent/EP2586067A2/de
Priority to JP2013506556A priority patent/JP2013526045A/ja
Publication of WO2011134700A2 publication Critical patent/WO2011134700A2/de
Publication of WO2011134700A3 publication Critical patent/WO2011134700A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/254—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising a metal, e.g. transparent gold
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Solarzelle mit einer Passivierungs-Schichtfolge mit einer Vielzahl inselartiger Ausnehmungen, in denen die Passivierungsschichten vollständig entfernt sind, auf der zweiten Hauptoberfläche, einer auf der Passivierungs-Schichtfolge und in den Ausnehmungen auf der Substratoberfläche angeordneten dünnen ersten Metallschicht, einer die erste Metallschicht bedeckenden dünnen dielektrischen Abdeckschicht, die eine erste regelmäßige Anordnung schmaler linienartiger Öffnungen und eine zweite regelmäßige Anordnung wesentlich breiterer linienartiger oder langgestreckt inselartiger Öffnungen aufweist, wobei die erste und zweite Öffnungs-Anordnung unter einem Winkel, insbesondere quer zueinander ausgerichtet sind, und einer hoch leitfähigen und an der freiliegenden Oberfläche lötfähigen zweiten Metallschicht in den Öffnungen der ersten und zweiten Öffnungs-Anordnung, die dort die erste Metallschicht kontaktiert.
PCT/EP2011/052954 2010-04-26 2011-03-01 Solarzelle Ceased WO2011134700A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020127030801A KR20130073900A (ko) 2010-04-26 2011-03-01 태양 전지
US13/643,648 US9209321B2 (en) 2010-04-26 2011-03-01 Solar cell
CN201180020871.4A CN102893406B (zh) 2010-04-26 2011-03-01 太阳能电池
EP11705887.5A EP2586067A2 (de) 2010-04-26 2011-03-01 Solarzelle
JP2013506556A JP2013526045A (ja) 2010-04-26 2011-03-01 太陽電池

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010028189.1A DE102010028189B4 (de) 2010-04-26 2010-04-26 Solarzelle
DE102010028189.1 2010-04-26

Publications (2)

Publication Number Publication Date
WO2011134700A2 WO2011134700A2 (de) 2011-11-03
WO2011134700A3 true WO2011134700A3 (de) 2012-06-07

Family

ID=44625254

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/052954 Ceased WO2011134700A2 (de) 2010-04-26 2011-03-01 Solarzelle

Country Status (7)

Country Link
US (1) US9209321B2 (de)
EP (1) EP2586067A2 (de)
JP (1) JP2013526045A (de)
KR (1) KR20130073900A (de)
CN (1) CN102893406B (de)
DE (1) DE102010028189B4 (de)
WO (1) WO2011134700A2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US9312420B2 (en) * 2012-04-17 2016-04-12 Lg Electronics Inc. Solar cell and method for manufacturing the same
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
TWI500174B (zh) * 2013-01-08 2015-09-11 Motech Ind Inc 太陽能電池及其模組
US9412884B2 (en) * 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
TWI505484B (zh) * 2013-05-31 2015-10-21 Motech Ind Inc 太陽能電池及其模組
US9786800B2 (en) 2013-10-15 2017-10-10 Solarworld Americas Inc. Solar cell contact structure
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
WO2019044676A1 (ja) 2017-08-29 2019-03-07 京セラ株式会社 太陽電池素子および太陽電池モジュール
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
CN113306272A (zh) * 2021-06-21 2021-08-27 江苏润阳世纪光伏科技有限公司 一种丝网印刷生产用的新型网版图形制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337283B1 (en) * 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
US20090283143A1 (en) * 2008-05-16 2009-11-19 Andreas Krause Point contact solar cell
US20100055822A1 (en) * 2008-08-27 2010-03-04 Weidman Timothy W Back contact solar cells using printed dielectric barrier

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US5704992A (en) * 1993-07-29 1998-01-06 Willeke; Gerhard Solar cell and method for manufacturing a solar cell
DE19515666A1 (de) 1995-04-28 1996-10-31 Daimler Benz Ag Verfahren zur Detektion und Klassifizierung vergrabener Objekte mittels eines Radarverfahrens
DE19525720C2 (de) 1995-07-14 1998-06-10 Siemens Solar Gmbh Herstellungsverfahren für eine Solarzelle ohne Vorderseitenmetallisierung
US20090111206A1 (en) * 1999-03-30 2009-04-30 Daniel Luch Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture
DE19915666A1 (de) 1999-04-07 2000-10-19 Fraunhofer Ges Forschung Verfahren und Vorrichtung zur selektiven Kontaktierung von Solarzellen
JP4170701B2 (ja) * 2002-07-31 2008-10-22 信越半導体株式会社 太陽電池及びその製造方法
US7200277B2 (en) 2003-07-01 2007-04-03 Eastman Kodak Company Method for transcoding a JPEG2000 compressed image
US20070107773A1 (en) * 2005-11-17 2007-05-17 Palo Alto Research Center Incorporated Bifacial cell with extruded gridline metallization
US20070295399A1 (en) * 2005-12-16 2007-12-27 Bp Corporation North America Inc. Back-Contact Photovoltaic Cells
EP1987543A1 (de) * 2006-01-25 2008-11-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum herstellen einer metallischen kontaktstruktur einer solarzelle
US20080128020A1 (en) * 2006-11-30 2008-06-05 First Solar, Inc. Photovoltaic devices including a metal stack
US8115096B2 (en) * 2007-06-18 2012-02-14 E-Cube Technologies, Ltd. Methods and apparatuses for improving power extraction from solar cells
JP5226255B2 (ja) * 2007-07-13 2013-07-03 シャープ株式会社 太陽電池の製造方法
DE102007059486A1 (de) 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Rückkontaktsolarzelle mit länglichen, ineinander verschachtelten Emitter- und Basisbereichen an der Rückseite und Herstellungsverfahren hierfür
US7820540B2 (en) * 2007-12-21 2010-10-26 Palo Alto Research Center Incorporated Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells
DE102008013446A1 (de) 2008-02-15 2009-08-27 Ersol Solar Energy Ag Verfahren zur Herstellung monokristalliner n-Silizium-Solarzellen sowie Solarzelle, hergestellt nach einem derartigen Verfahren
DE102008017312B4 (de) 2008-04-04 2012-11-22 Universität Stuttgart Verfahren zur Herstellung einer Solarzelle
DE102008020796A1 (de) 2008-04-22 2009-11-05 Q-Cells Ag Rückseitenkontakt-Solarzelle und Verfahren zu deren Herstellung
DE102008033169A1 (de) 2008-05-07 2009-11-12 Ersol Solar Energy Ag Verfahren zur Herstellung einer monokristallinen Solarzelle
US20090301559A1 (en) * 2008-05-13 2009-12-10 Georgia Tech Research Corporation Solar cell having a high quality rear surface spin-on dielectric layer
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
JP5410050B2 (ja) * 2008-08-08 2014-02-05 三洋電機株式会社 太陽電池モジュール
US7897434B2 (en) * 2008-08-12 2011-03-01 International Business Machines Corporation Methods of fabricating solar cell chips
DE102009031151A1 (de) * 2008-10-31 2010-05-12 Bosch Solar Energy Ag Solarzelle und Verfahren zu deren Herstellung
DE102009008786A1 (de) * 2008-10-31 2010-06-10 Bosch Solar Energy Ag Verfahren zur Herstellung einer Solarzelle und Solarzelle
DE102009016268A1 (de) * 2008-10-31 2010-05-12 Bosch Solar Energy Ag Solarzelle und Verfahren zu deren Herstellung
JP5642370B2 (ja) * 2009-09-29 2014-12-17 三洋電機株式会社 太陽電池モジュール
US8115097B2 (en) * 2009-11-19 2012-02-14 International Business Machines Corporation Grid-line-free contact for a photovoltaic cell
DE102010027940A1 (de) * 2010-04-20 2011-10-20 Robert Bosch Gmbh Verfahren zur Herstellung einer Solarzelle sowie nach diesem Verfahren hergestellte Solarzelle

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337283B1 (en) * 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
US20090283143A1 (en) * 2008-05-16 2009-11-19 Andreas Krause Point contact solar cell
US20100055822A1 (en) * 2008-08-27 2010-03-04 Weidman Timothy W Back contact solar cells using printed dielectric barrier

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ANSGAR METTE: "New Concepts for Front Side Metallization of Industrial Silicon Solar Cells", 26 November 2007 (2007-11-26), XP055020426, Retrieved from the Internet <URL:http://www.freidok.uni-freiburg.de/volltexte/3782/pdf/Diss_Mette.pdf> [retrieved on 20120228] *
VERLINDEN P ET AL: "Multilevel metallization for large area point-contact solar cells", PROCEEDINGS OF THE 20TH IEEE PHOTOVOLTAIC SPEC. CONF., 26 September 1988 (1988-09-26) - 30 September 1988 (1988-09-30), Las Vegas, pages 532 - 537, XP010750466, DOI: 10.1109/PVSC.1988.105759 *

Also Published As

Publication number Publication date
US20130104975A1 (en) 2013-05-02
US9209321B2 (en) 2015-12-08
DE102010028189B4 (de) 2018-09-27
CN102893406B (zh) 2016-11-09
EP2586067A2 (de) 2013-05-01
CN102893406A (zh) 2013-01-23
JP2013526045A (ja) 2013-06-20
WO2011134700A2 (de) 2011-11-03
KR20130073900A (ko) 2013-07-03
DE102010028189A1 (de) 2011-10-27

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