WO2011136603A3 - Appareil de traitement au plasma - Google Patents

Appareil de traitement au plasma Download PDF

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Publication number
WO2011136603A3
WO2011136603A3 PCT/KR2011/003191 KR2011003191W WO2011136603A3 WO 2011136603 A3 WO2011136603 A3 WO 2011136603A3 KR 2011003191 W KR2011003191 W KR 2011003191W WO 2011136603 A3 WO2011136603 A3 WO 2011136603A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing apparatus
plasma
plasma processing
chambers
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/003191
Other languages
English (en)
Korean (ko)
Other versions
WO2011136603A2 (fr
Inventor
이경호
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TERASEMICOM Corp
Original Assignee
TERASEMICOM Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TERASEMICOM Corp filed Critical TERASEMICOM Corp
Priority to JP2013507889A priority Critical patent/JP2013529358A/ja
Priority to CN2011800204056A priority patent/CN102859665A/zh
Publication of WO2011136603A2 publication Critical patent/WO2011136603A2/fr
Publication of WO2011136603A3 publication Critical patent/WO2011136603A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treatment Of Fiber Materials (AREA)

Abstract

La présente invention concerne un appareil de traitement au plasma. Selon un mode de réalisation de l'invention, l'appareil de traitement au plasma (1) comporte une première et une deuxième chambres (110, 120) qui sont disposées indépendamment l'une de l'autre, un ensemble chambre unitaire (100) pour traiter au plasma un substrat (10) devant y être introduit, et une électrode au plasma unitaire (200) qui a une forme courbe et génère le plasma dans les première et deuxième chambres (110, 120).
PCT/KR2011/003191 2010-04-30 2011-04-29 Appareil de traitement au plasma Ceased WO2011136603A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013507889A JP2013529358A (ja) 2010-04-30 2011-04-29 プラズマ処理装置
CN2011800204056A CN102859665A (zh) 2010-04-30 2011-04-29 等离子体处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0041048 2010-04-30
KR1020100041048A KR101205242B1 (ko) 2010-04-30 2010-04-30 플라즈마 처리 장치

Publications (2)

Publication Number Publication Date
WO2011136603A2 WO2011136603A2 (fr) 2011-11-03
WO2011136603A3 true WO2011136603A3 (fr) 2012-03-08

Family

ID=44862081

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/003191 Ceased WO2011136603A2 (fr) 2010-04-30 2011-04-29 Appareil de traitement au plasma

Country Status (5)

Country Link
JP (1) JP2013529358A (fr)
KR (1) KR101205242B1 (fr)
CN (1) CN102859665A (fr)
TW (1) TW201201246A (fr)
WO (1) WO2011136603A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013214445A (ja) * 2012-04-03 2013-10-17 Ihi Corp プラズマ処理装置
CN105990080B (zh) * 2015-02-02 2019-02-22 苏州爱特维电子科技有限公司 等离子体处理装置
CN110828273B (zh) * 2018-08-09 2022-07-22 北京北方华创微电子装备有限公司 等离子体设备和等离子体系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050093951A (ko) * 2004-03-17 2005-09-26 주성엔지니어링(주) 적층구조의 공정챔버를 포함하는 엘씨디 제조장비
KR100576093B1 (ko) * 2004-03-15 2006-05-03 주식회사 뉴파워 프라즈마 다중 배열된 진공 챔버를 구비한 플라즈마 반응 챔버
KR100757717B1 (ko) * 2000-04-13 2007-09-11 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 박막 형성 방법, 박막 형성 장치 및 태양전지
US20090286010A1 (en) * 2008-05-16 2009-11-19 General Electric Company High throughput processes and systems for barrier film deposition and/or encapsulation of optoelectronic devices

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745598A (ja) * 1993-07-30 1995-02-14 Kokusai Electric Co Ltd プラズマ発生装置
JPH0745599A (ja) * 1993-07-30 1995-02-14 Kokusai Electric Co Ltd プラズマ発生装置
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US6176667B1 (en) * 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
JPH11317299A (ja) * 1998-02-17 1999-11-16 Toshiba Corp 高周波放電方法及びその装置並びに高周波処理装置
JP3541359B2 (ja) * 2001-09-19 2004-07-07 独立行政法人 科学技術振興機構 超音波プローブの一部を内蔵した基板載置台及び超音波プローブ貫通孔の密閉装置
JP3957549B2 (ja) * 2002-04-05 2007-08-15 株式会社日立国際電気 基板処埋装置
JP2004055600A (ja) * 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
KR100798355B1 (ko) * 2005-05-23 2008-01-28 주식회사 뉴파워 프라즈마 대면적 처리용 외장형 권선 코일을 구비하는 플라즈마처리장치
KR100720989B1 (ko) * 2005-07-15 2007-05-28 주식회사 뉴파워 프라즈마 멀티 챔버 플라즈마 프로세스 시스템
US7845310B2 (en) * 2006-12-06 2010-12-07 Axcelis Technologies, Inc. Wide area radio frequency plasma apparatus for processing multiple substrates
KR100796980B1 (ko) * 2007-01-17 2008-01-22 피에스케이 주식회사 기판 처리 장치 및 방법
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
KR101117670B1 (ko) * 2009-02-02 2012-03-07 주식회사 테라세미콘 유도결합형 플라즈마 발생소스 전극 및 이를 포함하는 기판처리 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100757717B1 (ko) * 2000-04-13 2007-09-11 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 박막 형성 방법, 박막 형성 장치 및 태양전지
KR100576093B1 (ko) * 2004-03-15 2006-05-03 주식회사 뉴파워 프라즈마 다중 배열된 진공 챔버를 구비한 플라즈마 반응 챔버
KR20050093951A (ko) * 2004-03-17 2005-09-26 주성엔지니어링(주) 적층구조의 공정챔버를 포함하는 엘씨디 제조장비
US20090286010A1 (en) * 2008-05-16 2009-11-19 General Electric Company High throughput processes and systems for barrier film deposition and/or encapsulation of optoelectronic devices

Also Published As

Publication number Publication date
CN102859665A (zh) 2013-01-02
TW201201246A (en) 2012-01-01
WO2011136603A2 (fr) 2011-11-03
KR20110121448A (ko) 2011-11-07
JP2013529358A (ja) 2013-07-18
KR101205242B1 (ko) 2012-11-27

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