WO2012007252A1 - Modul-package und herstellungsverfahren - Google Patents
Modul-package und herstellungsverfahren Download PDFInfo
- Publication number
- WO2012007252A1 WO2012007252A1 PCT/EP2011/060245 EP2011060245W WO2012007252A1 WO 2012007252 A1 WO2012007252 A1 WO 2012007252A1 EP 2011060245 W EP2011060245 W EP 2011060245W WO 2012007252 A1 WO2012007252 A1 WO 2012007252A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chip
- module
- gap
- filler
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/058—Holders or supports for surface acoustic wave devices
- H03H9/059—Holders or supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/016—Manufacture or treatment using moulds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/124—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed the encapsulations having cavities other than that occupied by chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/141—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being on at least the sidewalls of the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
- H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/853—On the same surface
- H10W72/856—Bump connectors and die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Definitions
- Module package and manufacturing method The invention relates to a module package having a chip with sensitive component structures such as in particular a SAW filter (Surface Acoustic Wave) and a herstel ⁇ averaging method for an inventive module package.
- SAW filter Surface Acoustic Wave
- the manufacture of modules and the production of used therein SAW filters requires separate Pro ⁇ process chains currently two. So far, SAW filters and modules are produced as separate products.
- Two-in-one filters exist.
- the filters can currently be built together on a module substrate only with single filters or with multiple two-in-one filters.
- a gap is created between the chip and the substrate.
- this gap must be sealed before Molden.
- films are laminated or a spraying or dipping method used.
- the object of the present invention is therefore to unify the two process chains, filter production and module production. This object is achieved by a module package having the features of claim 1.
- Advantageous embodiments of the invention will become apparent from other claims. It is proposed that a chip, which has on its upper side device structures and whose top is facing the module carrier, wherein a gap is formed between the chip top and module ⁇ carrier to protect with an encapsulation layer.
- the encapsulation layer ⁇ a filler is added and the encapsulation ⁇ layer is designed such that it partially fills the chip, whereby a maximum of the part of the chip is underfilled, on which there are no device structures.
- Minimum includes the encapsulation almost flush with the Be ⁇ ten vom of the chip, so that almost no underfilling occurs ⁇ .
- the underfilled part may be a peripheral edge region on the top of the chip carrying the component structures.
- the sensitive component structures are located on the chip top side and therefore in the gap between the chip top side and the module carrier.
- a gap remains in this gap after the encapsulation, which protects the component structures.
- Microelectromechanical components may include sensors and actuators that are typically mechanically sensitive or must remain mobile for their function in the encapsulated state.
- the crack penetration of the mold material which is used for encryption encapsulation is primarily determined by the choice of a filler is added ⁇ mixed with the mold material.
- the splitting is determined by the proportion of the filler in the total material and by the size distribution of the filler grains.
- a proportion of the filler in the total ⁇ material of the encapsulation layer of more than 75 mass percent is selected so that adjusts the desired low fissile property of the mold material in the production of Verkap ⁇ selungs slaughter.
- the filler distribution may be chosen such that at least one third of the filler grains have a larger diameter than the height of the gap under the flip-chip SAW filters.
- a bi- or trimodal size distribution of the filler can be used.
- fine, medium and coarse particles of the filler are used.
- filler distributions with more than three particle sizes. Fillers are for underfilling a component previously often used with particularly rounded particles, as these egg ⁇ ne big crack penetration thus offer and good flow behavior.
- a small degree of cracking is desires, so that preferably such filler particles are selected out ⁇ and used, the edged outer surfaces aufwei ⁇ sen.
- a suitable filler is z.
- silica is arranged on the module substrate or the chip itself, which allows a narrowing of the gap described ⁇ light. In this manner, the under-filling of the chip is further limited by the encapsulant layer, so that the size and or proportion of the filler in the molding compound can be redu ⁇ sheet.
- electrical connections between the module substrate and the chip are produced by bumps.
- bumps are understood all the electrically conductive structures according to the invention, over which "point-like" blank during bonding electrical contacts herstel ⁇ len.
- the bumps of the gap between the chip and module substrate can be narrowed, so that the encapsulation layer penetrates to a lesser extent in this gap and less under fills the chip.
- solder bumps or stud bumps the latter are pressed together by contact pressure with simultaneous action of ultrasound and is welded to the substrate.
- At least one further is provided on the module substrate Component, z.
- an SMD component applied, which does not require a cavity. This also creates a gap between the further component and the module substrate.
- An SMD component is usually connected to the module substrate by means of solder connections. If these solder joints were not sealed, then moisture could settle at the interfaces, resulting in a short circuit. Therefore, the above-described gap in an SMD component is filled with an underfill compound and thus sealed.
- the further SMD component can also be fixed on the module substrate by means of a non-melting connection, for example a conductive adhesive.
- a non-melting connection for example a conductive adhesive.
- the Unteryogllmasse can be dispensed with the Unterglallmasse.
- the subject matter of the present invention is furthermore a method for producing the above-described module package.
- a device for. As a SAW filter, as bare chip - bare the - applied in the flip-chip method. Subsequently, a molding compound which has been mixed with a filler is applied to the module over a large area.
- the Mold ⁇ mass is first applied in solid form, for example as Granu ⁇ lat, tablet or sheet. The module and the mold mass are then introduced into a mold, the molding compound is liquefied and by increasing the pressure, the molding compound is pressed into the desired shape. Subsequently, the molding compound is cured to the encapsulation layer.
- the material of the encapsulation ⁇ layer is selected such that it be ⁇ sits a crack penetration, which leads to an under-filling of the at least one chip in such a way that a maximum part of the chip is underfilled, on which no components are located, and a minimum of the Encapsulation layer terminates almost flush with the side surfaces of the chip.
- the curing of the encapsulation layer is preferably carried out thermally. Alternatively, curing may be by irradiation or initiated. In a thermal curing, the curing temperature is adjusted so that it does not come to a thin ⁇ liquid phase during molding. Rather, the temperature is adjusted so low that a desired certain disturbedvisko ⁇ sity is maintained and the splitting does not increase unacceptably. This ensures a particularly even distribution of the mold material.
- the fissuring of Mold-masses is exploited here in a novel way. So far, the splitting ability has been exploited to ensure that the component is filled in small gaps.
- the fissile property is used in the present invention to preclude filling a column under SAW filtering.
- a method is selected which allows a uniform pressure distribution in the molding. This is the case for compression molding, for example. By keeping the pressure constant, the underfilling behavior becomes technically manageable.
- the advantages of the method are that a separate housing for the filter is avoided. This multiple processing steps are saved and a denser side ⁇ each set of different chips or filter allows the module carrier. This results in further advantages such as higher integration density, saving of module substrate and possibly a reduction in the height of the module.
- FIG. 1 shows a module package according to the invention with two SAW filters and one SMD component in cross section.
- FIG. 2 shows a module without encapsulation layer according to the present invention.
- FIG. 3 shows a module known from the prior art in a perspective view.
- FIG. 1 shows a cross-section of a module package according to the invention.
- the chips 2, 3, 9 are SAW components which have component structures on their upper side 13, 14.
- the upper sides 13, 14 of the chips 2 and 3 face the module carrier, wherein a gap 4 or 5 is formed between the chip top side 13, 14 and the module carrier.
- the SAW filters 2, 3 are applied to the module carrier 1 by means of bumps 6, 7 in the flip-chip method.
- the encapsulation layer on the chip 2, 3 is 8.
- the Verkapse ⁇ lung layer 8 is only partially into the gap 4, 5 penetrated between the chip 2, 3 and module carrier. 1
- the encapsulation layer 8 underfills only the edge region of the chip 2, 3, on which there are no component structures.
- the component structures are mounted on the module substrate 1 un ⁇ indirectly under the chip 2.
- a coil can be arranged on the module substrate 1 underneath the component-structure-carrying chip 2, 3 and interconnected therewith.
- the inductance of this coil may be part of a matching network or other circuit that contributes to the function of the chip or the entire module.
- the splitting of the molding compound is selected in such a case such that the part of the module substrate 1, the building ⁇ carries elemental structures, is not covered by the molding compound.
- a SMD component 9 ⁇ is further brought to the module carrier 1, a SMD component 9 ⁇ .
- This SMD component is connected to the module carrier 1 via solder connections 10, 11.
- a gap 12 is formed.
- the gap 12 is filled with a Unterglallmasse. This underfill mass may be different from the molding compound with limited fissuring. Alternatively, the gap is chosen to be larger here.
- FIG. 3 shows a module package which is known from the prior art.
- a module carrier 1 with various ⁇ which components 15, 16, 17, 18 is fitted.
- the components 15-18 are SAW filters. These SAW filters are each incorporated in a housing in the module shown in FIG. As a result, a greater height of the module is required than in the invention.
- FIG. 2 shows a module according to the present invention, in which the components 23 to 26 on a module carrier 1 are applied.
- the SAW filters 23 to 26 are mounted in the flip-chip method, so that the component structures are located on the chip side, which faces the module carrier 1.
- a gap 4, 5 is formed between the chip top with component structures and the module carrier 1.
- z. B. on the module carrier 1 mounted support structures 27 to 30 are in particular polymer structures.
- Support structures 27-30 made of other materials are possible, for example, metal such. B. copper.
- such support structures can also be attached to the chip itself so that they narrow the gap 4, 5.
- bumps are formed on the module carrier 1, which produce electrical connections between the chip and the module carrier. These bumps are placed in such a way that they narrow the gap and thus ensure that the encapsulation layer extends less deeply into this gap or that the molding compound penetrates less deeply into this gap during encapsulation.
- the fissuring property of the molding compound can also be adapted to a narrowed gap. This has the advantage that the encapsulation layer is then easier to apply and the risk of the formation or retention of voids in the encapsulation layer - except for the clearance to be kept clear - is minimized.
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/809,575 US9576870B2 (en) | 2010-07-12 | 2011-06-20 | Module package and production method |
| KR1020137000953A KR101844565B1 (ko) | 2010-07-12 | 2011-06-20 | 모듈 패키지 및 그 제조방법 |
| JP2013519011A JP2013531387A (ja) | 2010-07-12 | 2011-06-20 | モジュールパッケージ及びその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010026843.7 | 2010-07-12 | ||
| DE102010026843A DE102010026843A1 (de) | 2010-07-12 | 2010-07-12 | Modul-Package und Herstellungsverfahren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2012007252A1 true WO2012007252A1 (de) | 2012-01-19 |
Family
ID=44514649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2011/060245 Ceased WO2012007252A1 (de) | 2010-07-12 | 2011-06-20 | Modul-package und herstellungsverfahren |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9576870B2 (de) |
| JP (1) | JP2013531387A (de) |
| KR (1) | KR101844565B1 (de) |
| DE (1) | DE102010026843A1 (de) |
| WO (1) | WO2012007252A1 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11488943B2 (en) * | 2019-06-14 | 2022-11-01 | X Display Company Technology Limited | Modules with integrated circuits and devices |
| US20230084360A1 (en) * | 2021-09-10 | 2023-03-16 | Innolux Corporation | Electronic device and manufacturing method thereof |
| CN221282098U (zh) * | 2023-09-28 | 2024-07-05 | 锐石创芯(重庆)科技有限公司 | 一种封装结构和射频前端模组 |
Citations (8)
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| GB2297424A (en) * | 1995-01-26 | 1996-07-31 | Murata Manfacturing Co Ltd | Surface acoustic wave device |
| EP0896427A2 (de) * | 1997-08-05 | 1999-02-10 | Nec Corporation | Akustische Oberflächenwellenanordnung |
| EP1289133A1 (de) * | 2001-01-30 | 2003-03-05 | Matsushita Electric Industrial Co., Ltd. | Saw-einrichtung und verfahren zu ihrer herstellung |
| JP2004039945A (ja) * | 2002-07-05 | 2004-02-05 | Murata Mfg Co Ltd | 電子デバイスおよびその製造方法 |
| EP1427032A2 (de) * | 2002-12-06 | 2004-06-09 | Murata Manufacturing Co., Ltd. | Methode zur Herstellung eines piezoelektrischen Bauteils und piezoelektrisches Bauteil |
| EP1492231A1 (de) * | 2002-03-29 | 2004-12-29 | Fujitsu Media Devices Limited | Anbringverfahren für ein oberflächenschallwellenelement und oberflächenschallwellenbauelement mit harzversiegeltem oberflächenschallwellenelement |
| JP2006229632A (ja) * | 2005-02-17 | 2006-08-31 | Epson Toyocom Corp | 弾性表面波デバイス |
| JP2007028172A (ja) * | 2005-07-15 | 2007-02-01 | Alps Electric Co Ltd | 表面弾性波ディバイス |
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| TW569424B (en) | 2000-03-17 | 2004-01-01 | Matsushita Electric Industrial Co Ltd | Module with embedded electric elements and the manufacturing method thereof |
| JP3537400B2 (ja) * | 2000-03-17 | 2004-06-14 | 松下電器産業株式会社 | 半導体内蔵モジュール及びその製造方法 |
| JP3744828B2 (ja) * | 2001-09-14 | 2006-02-15 | ユーディナデバイス株式会社 | 半導体装置 |
| JP3524545B2 (ja) * | 2002-01-23 | 2004-05-10 | 松下電器産業株式会社 | 回路部品内蔵モジュールの製造方法 |
| TW200302685A (en) * | 2002-01-23 | 2003-08-01 | Matsushita Electric Industrial Co Ltd | Circuit component built-in module and method of manufacturing the same |
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| JP2008167358A (ja) * | 2007-01-05 | 2008-07-17 | Matsushita Electric Ind Co Ltd | 高周波半導体装置およびその製造方法 |
| DE102007017641A1 (de) * | 2007-04-13 | 2008-10-16 | Infineon Technologies Ag | Aushärtung von Schichten am Halbleitermodul mittels elektromagnetischer Felder |
| JP5092519B2 (ja) * | 2007-04-18 | 2012-12-05 | 富士通株式会社 | フリップチップ型半導体装置用アンダーフィル組成物、ならびにそれを用いたフリップチップ型半導体装置およびその製造方法 |
| JP2009285810A (ja) * | 2008-05-30 | 2009-12-10 | Toshiba Corp | 半導体装置およびその製造方法 |
-
2010
- 2010-07-12 DE DE102010026843A patent/DE102010026843A1/de not_active Ceased
-
2011
- 2011-06-20 WO PCT/EP2011/060245 patent/WO2012007252A1/de not_active Ceased
- 2011-06-20 KR KR1020137000953A patent/KR101844565B1/ko not_active Expired - Fee Related
- 2011-06-20 JP JP2013519011A patent/JP2013531387A/ja active Pending
- 2011-06-20 US US13/809,575 patent/US9576870B2/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2297424A (en) * | 1995-01-26 | 1996-07-31 | Murata Manfacturing Co Ltd | Surface acoustic wave device |
| EP0896427A2 (de) * | 1997-08-05 | 1999-02-10 | Nec Corporation | Akustische Oberflächenwellenanordnung |
| EP1289133A1 (de) * | 2001-01-30 | 2003-03-05 | Matsushita Electric Industrial Co., Ltd. | Saw-einrichtung und verfahren zu ihrer herstellung |
| EP1492231A1 (de) * | 2002-03-29 | 2004-12-29 | Fujitsu Media Devices Limited | Anbringverfahren für ein oberflächenschallwellenelement und oberflächenschallwellenbauelement mit harzversiegeltem oberflächenschallwellenelement |
| JP2004039945A (ja) * | 2002-07-05 | 2004-02-05 | Murata Mfg Co Ltd | 電子デバイスおよびその製造方法 |
| EP1427032A2 (de) * | 2002-12-06 | 2004-06-09 | Murata Manufacturing Co., Ltd. | Methode zur Herstellung eines piezoelektrischen Bauteils und piezoelektrisches Bauteil |
| JP2006229632A (ja) * | 2005-02-17 | 2006-08-31 | Epson Toyocom Corp | 弾性表面波デバイス |
| JP2007028172A (ja) * | 2005-07-15 | 2007-02-01 | Alps Electric Co Ltd | 表面弾性波ディバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101844565B1 (ko) | 2018-04-02 |
| JP2013531387A (ja) | 2013-08-01 |
| DE102010026843A1 (de) | 2012-01-12 |
| KR20130141421A (ko) | 2013-12-26 |
| US9576870B2 (en) | 2017-02-21 |
| US20130168876A1 (en) | 2013-07-04 |
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