WO2012041925A1 - Composant optoélectronique et procédé de fabrication d'un composant optoélectronique - Google Patents

Composant optoélectronique et procédé de fabrication d'un composant optoélectronique Download PDF

Info

Publication number
WO2012041925A1
WO2012041925A1 PCT/EP2011/066917 EP2011066917W WO2012041925A1 WO 2012041925 A1 WO2012041925 A1 WO 2012041925A1 EP 2011066917 W EP2011066917 W EP 2011066917W WO 2012041925 A1 WO2012041925 A1 WO 2012041925A1
Authority
WO
WIPO (PCT)
Prior art keywords
housing
substrate
light
wettable layer
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2011/066917
Other languages
German (de)
English (en)
Inventor
Magnus Ahlstedt
Johann Ramchen
David Racz
Gertrud KRÄUTER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2012041925A1 publication Critical patent/WO2012041925A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape

Definitions

  • Optoelectronic components such as LEDs
  • housings are in accordance with previously known methods in separate shaping method, for example by
  • Object of at least one embodiment of the invention is the provision of an optoelectronic component having an improved housing. This object is achieved by an optoelectronic component according to claim 1.
  • the invention is the provision of a method for
  • An optoelectronic component which has a substrate, a light-emitting chip on the substrate and a housing laterally surrounding the light-emitting chip on the substrate. Between side walls of the light-emitting chip and the housing, a distance of less than 2 ⁇ be present. This will be one
  • the housing has a reduced distance from the side walls of the light-emitting chip. The distance between chip and
  • Housing may also be selected from a range that includes 10 nm to less than 2 ⁇ .
  • the housing may comprise a material comprising a matrix and a filler.
  • the matrix may be selected from a group comprising silicone, unsaturated polyesters and epoxy resin.
  • the filler may be selected from a group comprising ZrC> 2, ZnO, BaSC> 4 and 10O2.
  • the degree of filling of the filler in the matrix may be greater than 20% by weight, for example 25 to 30% by weight.
  • the housing comprises a material that can be applied in a liquid state and is curable. As a result, the formation of the housing during its manufacture can be simplified.
  • the filler may be evenly distributed throughout the matrix.
  • the housing may reflect light emitted from the chip.
  • a housing of an optoelectronic component is provided, which also serves as a reflector.
  • the reflective properties are given by the filler, for example 10 2 particles.
  • the filler for example 1O2 particles, may have diffuse reflective properties.
  • the housing is shaped to have a rounded surface facing away from the substrate, it may cooperate with produce good color homogeneity over the entire viewing angle of the filler.
  • the coupling efficiency of an optoelectronic device can be increased, since this housing material a
  • the light-emitting chip may be an LED chip.
  • a sapphire chip can also be used.
  • the combination of sapphire chip and T1O2-containing reflector can be provided.
  • sapphire chip in this context an LED chip comprising a substrate comprising Al 2 O 3 . On this substrate then further functional layers are arranged.
  • a method for producing an optoelectronic component which has a housing which has the following
  • Process steps include:
  • step D) hardening of the housing material, wherein in the method step D) the housing material between the at least one first portion and
  • step E Forms sidewalls of the light emitting chip on the substrate to a housing, which is formed in step E).
  • the non-wettable layer can be applied with a thickness of less than 2 ⁇ .
  • it may be applied with a thickness selected from a range including 10 nm to less than 2 ⁇ .
  • saw marks refers to the areas of the substrate in which the substrate can be divided in order to obtain a plurality of substrates each having a chip and a housing.
  • Edge regions are to be understood as meaning the regions which surround the second subregion on which a chip is applied, so that the chip is applied to an uncoated region and is surrounded by a non-wettable layer on the substrate.
  • the light-emitting chip is coated, in particular on the side walls and on its upper side, which faces away from the substrate after application of the chip, with the non-wettable layer, while the underside, the side facing the substrate after application of the chip, free from the is not wettable layer.
  • the underside which should remain free of the non-wettable layer, during the coating of the chip
  • a plurality of optoelectronic components can be produced simultaneously.
  • a plurality of first subregions are coated with the non-wettable layer and in process step D) several light
  • the emitting chips are deposited on second portions of the substrate that are free of the wettable layer.
  • the first partial regions may have a symmetrical arrangement on the substrate, for example forming a grid on the substrate.
  • the chips have a smaller one Diameter, as the predetermined by the first partial areas square second portions. Between the chips and the first sections is then each
  • each chip has a housing on the substrate.
  • the at least one light-emitting chip can be based on a metallization which is located in second subregions of the
  • Metallization may be a metal layer whose diameter is at least as large as the diameter of the chip, and smaller than the diameter of the second portion bounded by the non-wettable layer of the first portion.
  • the at least one light-emitting chip is glued or soldered onto the substrate or to the metallization in method step C), for example.
  • the removal of the non-wettable layer can be done with an agent that is selected from a group that includes 02 _ plasma, CF4 plasma, Ar plasma, and isopropanol. So that can
  • a Lichtauskoppelinnovation be applied over a light-emitting chip, which rests for example on the housing surrounding the chip.
  • the housing wall forms in the production of Lichtauskoppel momentss a suitable stopper edge for example dispensable or screenprintbare materials, with which, for example
  • Auskoppellinsen be generated from transparent or phosphor-filled material.
  • a liquid material for forming a light extraction body which may be either transparent or phosphor-filled,
  • Housing material is round.
  • the non-wettable layer in process steps A) and B) may comprise a material that is hydrophobic.
  • the material may be selected from a group which
  • fluorinated silicone polytetrafluoroethylene or derivatives thereof. These materials may be treated with agents according to the above versions are well removed after curing of the housing material. Thus, a temporary,
  • Substrate are shared in the region of at least a first portion.
  • the division thus takes place after the removal of the non-wettable layer so that only one material, that of the substrate, has to be severed. This will be the
  • the first subarea can therefore represent a saw track.
  • the substrate may be a printed circuit board (PCB), a
  • Be ceramic, a circuit board or an aluminum layer Be ceramic, a circuit board or an aluminum layer.
  • the housing material in process step D) can be applied by a method selected from the group consisting of screen printing, spin coating, spraying, jetting,
  • the housing material can be applied by means of a batch process.
  • the non-wettable layer can be applied in process steps A) and B) by means of photolithography.
  • the wetting angle can be adjusted with this method.
  • a ball-like shape of the surface facing away from the substrate surface of the housing can be formed.
  • wettable areas ie first portions on the substrate, and the coated chip, as a stopper edges for the liquid
  • the wetting angle can be determined by the polarity of the surface groups of the non-wettable
  • a housing material may be applied which comprises a matrix and a filler.
  • the matrix may comprise a material selected from a group consisting of silicone, unsaturated
  • Polyester and epoxy resin As a filler can be used as a filler.
  • the filler may be present in the matrix at a level greater than 20% by weight. This provides a reflective filler which imparts reflective properties to the package of the device.
  • the housing of the device is also a reflector.
  • the housing can also be used as insulation for a surface contact
  • a CPHF contact (CPHF: compact planar high flux) serve.
  • CPHF compact planar high flux
  • an LED chip can be coated. This is a method for the production of LEDs with
  • This method is suitable for LED chips with two back contacts, for LED chips with top contacts and for sapphire chips, which can be contacted, for example, by means of CPHF contacts.
  • an LED chip with two bottom contacts can be produced by the method in which both the housing or the reflector and a Auskoppelpian can be produced by Desertausformung.
  • FIG. 1 shows the schematic side view of the production of an optoelectronic component using the example of an LED.
  • the substrate 10 is shown, which may be, for example, a PCB, a ceramic substrate, a printed circuit board or an aluminum plate.
  • non-wettable layers 30 are arranged in first sub-areas. These are in this example in sawgespur Siemens for later division of the substrate 10.
  • metallizations 15 are present on the substrate, on each of which a light-emitting LED chip 20 is applied. These are located on second regions 12 of the substrate 10.
  • the production of two LEDs is shown using the example of FIG. 1, but with the method only one LED chip 20 or a plurality of LED chips 20 can also be applied to a substrate 10.
  • the LED chip 20 is also coated with a non-wettable layer 30, to the
  • the non-wettable layer 30 may comprise a fluorinated silicone, polytetrafluoroethylene or derivatives thereof.
  • Coating of the LED chip 20 and the substrate 10 with the non-wettable layer 30 may, for example, by
  • Photolithography done.
  • the coating of the LED chips 20 takes place prior to their application to the substrate 10 and after their separation from the wafer bundle.
  • the LED chips 20 are glued or soldered to the substrate or to the metallization 15.
  • the housing 40 is further shown. This is applied as a liquid housing material and forms due to the non-wetting properties of the non-wettable layer 30 between side walls of the LED chip 20 and the non-wettable layer 30 coated second portions 12 on the substrate. By adjusting the wetting angle, housing with one of the
  • Substrate remote round surface formed. Due to the symmetrical structure of the non-wettable areas (not visible in FIGS. 1 a to 1 d), the housing forms in wettable areas, the second partial areas 12 on the substrate 10.
  • the application of the liquid housing material can be any suitable liquid housing material.
  • the housing material may comprise a matrix and a filler.
  • the matrix is for example silicone or epoxy resin
  • the filler for example T1O2 ⁇
  • the housing material has also reflective
  • the housing 40 also acts as a reflector for light emitted by the LED chip 20.
  • the housing material is cured, for example at a temperature of 150 ° C.
  • Figure lc) shows the cured housing 40 surrounding the LED chips 20 after the non-wettable layer 30 has been removed. Thus, there is no non-wettable
  • Partial regions of the substrate 10. The removal of the non-wettable layer 30, for example, by 02 _ plasma, CF4 plasma, Ar plasma and / or isopropanol effected.
  • the distance between the housing 40 and the LED chip 20 is only as great as the thickness of the removed non-wettable layer 30.
  • the coupling-out lens 50 can also be applied as a liquid material, form itself between housing walls, which serve as stopper edges, and then hardened.
  • a coupling-out lens can be transparent and thus only decouple the emitted radiation or the emitted light, or it can be filled with phosphor materials, so that the
  • emitted light can be converted to another wavelength.
  • the presence of the reflective housing 40 increases the coupling-out efficiency of the device in any case.
  • This method can also be used to process a sapphire chip for producing an optoelectronic component.
  • Figure 2 shows the manufacturing process in a schematic side view in three-dimensional form. Same
  • FIG. 2 by way of example, four light-emitting LED chips 20 are applied to a substrate 10, see FIG. 2b).
  • the substrate 10 is shown, on which a non-wettable layer 30 is applied in first partial regions 11, and metallizations 15 are applied in second partial regions 12 which are free of the non-wettable layer.
  • the metallizations have a smaller diameter than the second portion, which is present between the first provided with a non-wettable layer portion.
  • the second portion is partially free of metallization 15. Due to the symmetrical arrangement of the first portion 11, the second portion is 12th
  • FIG. 2d shows how a coupling-out lens 50 for coupling out the emitted light is applied between the housing 40 via the LED chips 20. This can also be created by self-forming, in which the housing 40 serves as a stopper edge and is helpful for self-formation of the liquid applied material of the coupling-out lens.
  • FIG. 2e an exemplary contact 60 which contacts the individual LED chips 20. It may be like CPHF contacting here.
  • the substrate 10 may be in the areas in which a non-wettable layer 30 was present, ie the first
  • Subareas to be separated and thus several components, each with an LED chip 20 are provided.
  • the invention is not limited to the above
  • Embodiments limited. Rather, they are too

Landscapes

  • Led Device Packages (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

L'invention concerne un composant optoélectronique pourvu d'une puce émettant de la lumière et un boîtier entourant latéralement la puce émettant de la lumière. L'invention concerne également un procédé de fabrication d'un composant optoélectronique selon lequel un matériau de boîtier liquide est appliqué sur un substrat.
PCT/EP2011/066917 2010-09-30 2011-09-28 Composant optoélectronique et procédé de fabrication d'un composant optoélectronique Ceased WO2012041925A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010047156A DE102010047156A1 (de) 2010-09-30 2010-09-30 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102010047156.9 2010-09-30

Publications (1)

Publication Number Publication Date
WO2012041925A1 true WO2012041925A1 (fr) 2012-04-05

Family

ID=44719959

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/066917 Ceased WO2012041925A1 (fr) 2010-09-30 2011-09-28 Composant optoélectronique et procédé de fabrication d'un composant optoélectronique

Country Status (3)

Country Link
DE (1) DE102010047156A1 (fr)
TW (1) TW201240160A (fr)
WO (1) WO2012041925A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020173908A1 (fr) * 2019-02-25 2020-09-03 Osram Opto Semiconductors Gmbh Mouillage contrôlé lors de la fabrication de composants électroniques

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017106508A1 (de) * 2017-03-27 2018-09-27 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Herstellungsverfahren
TWI781743B (zh) * 2021-08-27 2022-10-21 友達光電股份有限公司 顯示裝置及其製造方法
DE102024103528A1 (de) * 2024-02-08 2025-08-14 Ams-Osram International Gmbh Optoelektronisches bauteil

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303978B1 (en) * 2000-07-27 2001-10-16 Motorola, Inc. Optical semiconductor component and method of manufacture
US6489637B1 (en) * 1999-06-09 2002-12-03 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
WO2007012992A1 (fr) * 2005-07-28 2007-02-01 Nxp B.V. Emballage et procede de fabrication pour un composant microelectronique
US20100140648A1 (en) * 2008-12-09 2010-06-10 Mitsunori Harada Semiconductor light emitting device and method for producing the same
DE102009012517A1 (de) * 2009-03-10 2010-09-16 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19625622A1 (de) * 1996-06-26 1998-01-02 Siemens Ag Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE102005059524A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6489637B1 (en) * 1999-06-09 2002-12-03 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
US6303978B1 (en) * 2000-07-27 2001-10-16 Motorola, Inc. Optical semiconductor component and method of manufacture
WO2007012992A1 (fr) * 2005-07-28 2007-02-01 Nxp B.V. Emballage et procede de fabrication pour un composant microelectronique
US20100140648A1 (en) * 2008-12-09 2010-06-10 Mitsunori Harada Semiconductor light emitting device and method for producing the same
DE102009012517A1 (de) * 2009-03-10 2010-09-16 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020173908A1 (fr) * 2019-02-25 2020-09-03 Osram Opto Semiconductors Gmbh Mouillage contrôlé lors de la fabrication de composants électroniques
US12289937B2 (en) 2019-02-25 2025-04-29 Osram Opto Semiconductors Gmbh Controlled wetting in the manufacture of electronic components

Also Published As

Publication number Publication date
DE102010047156A1 (de) 2012-04-05
TW201240160A (en) 2012-10-01

Similar Documents

Publication Publication Date Title
DE102016119002B4 (de) Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements
DE102012212963B4 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102010031945A1 (de) Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE112007001232T5 (de) Lichtemittierendes Halbleiterelement und Verfahren zu dessen Herstellung
DE102013213073A1 (de) Verfahren zum Herstellen eines optoelektronischen Bauelementes
DE102018111637A1 (de) Optoelektronischer halbleiterchip, verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement
WO2017046257A1 (fr) Composant optoélectronique
DE10229231B9 (de) Verfahren zum Herstellen eines Strahlung emittierenden und/oder empfangenden Halbleiterchips mit einer Strahlungsein- und/oder -auskoppel-Mikrostruktur
EP2308105B1 (fr) Élément semi-conducteur optoélectronique
WO2016173841A1 (fr) Ensemble de composants optoélectroniques et procédé de fabrication d'une pluralité d'ensembles de composants optoélectroniques
DE112018004215B4 (de) Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung
DE102013202910A1 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102010047156A1 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
WO2009039802A1 (fr) Procédé de production d'un composant à semi-conducteur et composant à semi-conducteur
DE112019001007B4 (de) Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102013222702B4 (de) Optoelektronisches Bauelement, optoelektronische Anordnung, Verfahren zum Herstellen eines optischen Elements und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102019106546A1 (de) Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil
WO2021224015A1 (fr) Composant optoélectronique et son procédé de fabrication
WO2013045371A1 (fr) Procédé de fabrication d'au moins un composant semi-conducteur émettant et/ou recevant un rayonnement et composant semi-conducteur
WO2024256412A1 (fr) Procédé de production d'un composant électronique
WO2020127480A1 (fr) Dispositif laser et procédé de fabrication d'un dispositif laser
DE102017130574A1 (de) Verfahren zur Herstellung eines Konversionselements und Konversionselement
DE102018129191B4 (de) Verfahren zum herstellen einer leuchtvorrichtung und eine leuchtvorrichtung mit einem lichtemittierenden optoelektronischen bauelement
DE102018131296B4 (de) Verfahren zum Herstellen eines optoelektronischen Bauelements
WO2015135908A1 (fr) Élément optoélectronique et procédé de fabrication dudit élément optoélectronique

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11761632

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11761632

Country of ref document: EP

Kind code of ref document: A1