WO2012092537A3 - Procédés de traitement au laser pour cellules solaires photovoltaïques - Google Patents

Procédés de traitement au laser pour cellules solaires photovoltaïques Download PDF

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Publication number
WO2012092537A3
WO2012092537A3 PCT/US2011/068037 US2011068037W WO2012092537A3 WO 2012092537 A3 WO2012092537 A3 WO 2012092537A3 US 2011068037 W US2011068037 W US 2011068037W WO 2012092537 A3 WO2012092537 A3 WO 2012092537A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser processing
techniques
selective
solar cells
disclosed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/068037
Other languages
English (en)
Other versions
WO2012092537A2 (fr
Inventor
Mehrdad M. Moslehi
Virendra V. Rana
Pranav Anbalagan
Vivek SARASWAT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beamreach Solexel Assets Inc
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/118,295 external-priority patent/US8399331B2/en
Priority claimed from US13/271,212 external-priority patent/US9508886B2/en
Priority claimed from US13/303,488 external-priority patent/US20130164883A1/en
Application filed by Solexel Inc filed Critical Solexel Inc
Priority to KR1020137020198A priority Critical patent/KR101384853B1/ko
Priority to EP11853473.4A priority patent/EP2659518A4/fr
Publication of WO2012092537A2 publication Critical patent/WO2012092537A2/fr
Publication of WO2012092537A3 publication Critical patent/WO2012092537A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention porte sur divers procédés de traitement au laser pour produire divers types de cellules solaires à hétérojonction et à homojonction. Les procédés mettent en œuvre une ouverture de contact de base et d'émetteur, un dopage sélectif, une ablation de métal, un recuit pour améliorer la passivation, et un dopage d'émetteur sélectif par chauffage d'aluminium au laser. L'invention porte également sur des procédés de traitement au laser, qui sont adaptés à effectuer une ablation de silicium amorphe sélective et un dopage sélectif pour des cellules solaires à hétérojonction. Il est décrit des techniques d'ablation au laser qui laissent le silicium sous-jacent sensiblement non endommagé. Ces techniques de traitement au laser peuvent être appliquées à des substrats semi-conducteurs, y compris des substrats en silicium cristallin, et comprenant de plus des substrats en silicium cristallin qui sont fabriqués soit par des procédés de réalisation de tranches à la scie hélicoïdale soit par des processus de dépôt épitaxique, ou d'autres techniques de clivage telles qu'une implantation d'ions et un chauffage, qui sont soit planes soit texturées/tridimensionnelles. Ces techniques sont hautement appropriées pour un semi-conducteur cristallin mince, comprenant des films de silicium cristallin minces.
PCT/US2011/068037 2010-12-30 2011-12-30 Procédés de traitement au laser pour cellules solaires photovoltaïques Ceased WO2012092537A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020137020198A KR101384853B1 (ko) 2010-12-30 2011-12-30 광기전 태양 전지의 레이저 가공 방법
EP11853473.4A EP2659518A4 (fr) 2010-12-30 2011-12-30 Procédés de traitement au laser pour cellules solaires photovoltaïques

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
US201061428600P 2010-12-30 2010-12-30
US61/428,600 2010-12-30
US201061428953P 2010-12-31 2010-12-31
US201061428957P 2010-12-31 2010-12-31
US61/428,957 2010-12-31
US61/428,953 2010-12-31
US201113057104A 2011-02-01 2011-02-01
US13/057,104 2011-02-01
US13/118,295 2011-05-27
US13/118,295 US8399331B2 (en) 2007-10-06 2011-05-27 Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US13/271,212 US9508886B2 (en) 2007-10-06 2011-10-11 Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US13/271,212 2011-10-11
US13/303,488 US20130164883A1 (en) 2007-10-06 2011-11-23 Laser annealing applications in high-efficiency solar cells
US13/303,488 2011-11-23

Publications (2)

Publication Number Publication Date
WO2012092537A2 WO2012092537A2 (fr) 2012-07-05
WO2012092537A3 true WO2012092537A3 (fr) 2012-11-22

Family

ID=46383873

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PCT/US2011/068037 Ceased WO2012092537A2 (fr) 2010-12-30 2011-12-30 Procédés de traitement au laser pour cellules solaires photovoltaïques

Country Status (3)

Country Link
EP (1) EP2659518A4 (fr)
KR (1) KR101384853B1 (fr)
WO (1) WO2012092537A2 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US8637340B2 (en) 2004-11-30 2014-01-28 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
US9455362B2 (en) 2007-10-06 2016-09-27 Solexel, Inc. Laser irradiation aluminum doping for monocrystalline silicon substrates
KR101654548B1 (ko) 2011-12-26 2016-09-06 솔렉셀, 인크. 태양 전지에서 향상된 광 포획을 위한 시스템 및 방법
CN103346200A (zh) * 2013-05-13 2013-10-09 福建铂阳精工设备有限公司 玻璃基板及其制造方法和薄膜太阳能电池的制造方法
DE102014101235A1 (de) * 2014-01-31 2015-08-06 Rofin-Baasel Lasertech Gmbh & Co. Kg Verfahren zum Abtragen dielektrischer Schichten von Halbleiterbauelementen mittels eines Laserstrahls
KR102030521B1 (ko) 2017-11-30 2019-10-10 (주)에스엠텍 레이저를 이용한 태양전지 모듈용 유리표면 가공 장치
CN111063760B (zh) * 2018-10-17 2022-06-14 晶澳太阳能有限公司 一种太阳能电池的制备工艺
CN113257957B (zh) * 2021-06-11 2022-08-23 四川蜀旺新能源股份有限公司 超掺杂硅薄膜太阳能电池及其制作方法
CN114447156A (zh) * 2022-01-27 2022-05-06 环晟光伏(江苏)有限公司 一种适用于电镀电池片正表面激光开槽方法
CN116618821B (zh) * 2022-05-17 2024-06-28 武汉帝尔激光科技股份有限公司 一种利用激光束对膜改性及实现图形化的方法及其应用
CN115528136A (zh) * 2022-09-21 2022-12-27 浙江爱旭太阳能科技有限公司 一种背接触电池及其制作方法、电池组件、光伏系统
CN116722077A (zh) * 2023-06-28 2023-09-08 滁州捷泰新能源科技有限公司 一种se结构制备方法及太阳能电池
CN117253934A (zh) * 2023-11-20 2023-12-19 隆基绿能科技股份有限公司 一种背接触电池及光伏组件

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KR20090025998A (ko) * 2007-09-07 2009-03-11 주식회사 엘티에스 레이저를 이용한 고효율 태양전지의 제조방법
KR20100085736A (ko) * 2009-01-21 2010-07-29 현대중공업 주식회사 결정질 실리콘 태양전지 및 이의 제조방법
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KR20100128132A (ko) * 2009-05-27 2010-12-07 주식회사 효성 레이저를 이용한 태양전지 제조방법

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KR20100085736A (ko) * 2009-01-21 2010-07-29 현대중공업 주식회사 결정질 실리콘 태양전지 및 이의 제조방법
KR20100102255A (ko) * 2009-03-11 2010-09-24 엘지전자 주식회사 태양 전지 및 태양 전지의 제조 방법
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Also Published As

Publication number Publication date
KR20130099229A (ko) 2013-09-05
KR101384853B1 (ko) 2014-04-16
EP2659518A2 (fr) 2013-11-06
WO2012092537A2 (fr) 2012-07-05
EP2659518A4 (fr) 2014-09-24

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