WO2012102473A3 - 유기 led 의 산란층 및 평탄화층 형성용 바인더 및 상기 바인더를 포함하는 산란층 형성용 조성물 및 평탄화층 형성용 조성물 - Google Patents

유기 led 의 산란층 및 평탄화층 형성용 바인더 및 상기 바인더를 포함하는 산란층 형성용 조성물 및 평탄화층 형성용 조성물 Download PDF

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Publication number
WO2012102473A3
WO2012102473A3 PCT/KR2011/008972 KR2011008972W WO2012102473A3 WO 2012102473 A3 WO2012102473 A3 WO 2012102473A3 KR 2011008972 W KR2011008972 W KR 2011008972W WO 2012102473 A3 WO2012102473 A3 WO 2012102473A3
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forming
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French (fr)
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WO2012102473A2 (ko
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박장우
송세호
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Advanced Nano Products Co Ltd
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Advanced Nano Products Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxy groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Silicon Polymers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

본 발명은, 하기 화학식1로 표시되는 화합물을 축중합하여 제조되는 중량평균분자량이 2,000 내지 50,000인 실란 화합물을 포함하는 유기 LED의 산란층 및 평탄화층 형성용 바인더를 제공한다: [화학식1] RxSi(OR')4-x 상기 식에서 x는 0 ~ 3의 정수이고, R은 C1~C10의 탄화수소기 이거나, 에폭시기, 히드록시기, 아민기 및 아크릴레이트기로 이루어진 군으로부터 선택되는 하나 이상의 치환기를 갖는 C1~C10의 탄화수소기이고, R'은 CnH2n+1의 화학식을 갖는 알킬기이며, 여기서 n은 1~10의 정수이다.
PCT/KR2011/008972 2011-01-26 2011-11-23 유기 led 의 산란층 및 평탄화층 형성용 바인더 및 상기 바인더를 포함하는 산란층 형성용 조성물 및 평탄화층 형성용 조성물 Ceased WO2012102473A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0007828 2011-01-26
KR1020110007828A KR101240200B1 (ko) 2011-01-26 2011-01-26 유기 ｌｅｄ의 산란층 및 평탄화층 형성용 바인더 및 상기 바인더를 포함하는 산란층 형성용 조성물 및 평탄화층 형성용 조성물

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WO2012102473A2 WO2012102473A2 (ko) 2012-08-02
WO2012102473A3 true WO2012102473A3 (ko) 2012-09-20

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PCT/KR2011/008972 Ceased WO2012102473A2 (ko) 2011-01-26 2011-11-23 유기 led 의 산란층 및 평탄화층 형성용 바인더 및 상기 바인더를 포함하는 산란층 형성용 조성물 및 평탄화층 형성용 조성물

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KR (1) KR101240200B1 (ko)
WO (1) WO2012102473A2 (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070115802A (ko) * 2006-06-02 2007-12-06 후지필름 가부시키가이샤 안료분산 조성물, 이것을 사용한 착색 감광성 수지 조성물및 감광성 수지 전사재료, 그리고 이것들을 사용한컬러필터, 액정표시장치 및 ｃｃｄ 디바이스
KR20080101680A (ko) * 2007-05-18 2008-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시장치, 전자 기기, 및 그의 구동방법
KR100917334B1 (ko) * 2001-11-29 2009-09-16 나가세케무텍쿠스가부시키가이샤 광중합성 불포화 수지, 이의 제조방법 및 이를 포함하는알칼리 가용형 감방사선성 수지 조성물
KR20100108532A (ko) * 2007-12-10 2010-10-07 카네카 코포레이션 알칼리 현상성을 갖는 경화성 조성물 및 그것을 사용한 절연성 박막 및 박막 트랜지스터

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100917334B1 (ko) * 2001-11-29 2009-09-16 나가세케무텍쿠스가부시키가이샤 광중합성 불포화 수지, 이의 제조방법 및 이를 포함하는알칼리 가용형 감방사선성 수지 조성물
KR20070115802A (ko) * 2006-06-02 2007-12-06 후지필름 가부시키가이샤 안료분산 조성물, 이것을 사용한 착색 감광성 수지 조성물및 감광성 수지 전사재료, 그리고 이것들을 사용한컬러필터, 액정표시장치 및 ｃｃｄ 디바이스
KR20080101680A (ko) * 2007-05-18 2008-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시장치, 전자 기기, 및 그의 구동방법
KR20100108532A (ko) * 2007-12-10 2010-10-07 카네카 코포레이션 알칼리 현상성을 갖는 경화성 조성물 및 그것을 사용한 절연성 박막 및 박막 트랜지스터

Also Published As

Publication number Publication date
KR20120086530A (ko) 2012-08-03
WO2012102473A2 (ko) 2012-08-02
KR101240200B1 (ko) 2013-03-06

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