WO2012107263A3 - Optoelektronisches bauelement mit lichtdurchlässiger abdeckung und verfahren zu dessen herstellung - Google Patents

Optoelektronisches bauelement mit lichtdurchlässiger abdeckung und verfahren zu dessen herstellung Download PDF

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Publication number
WO2012107263A3
WO2012107263A3 PCT/EP2012/050776 EP2012050776W WO2012107263A3 WO 2012107263 A3 WO2012107263 A3 WO 2012107263A3 EP 2012050776 W EP2012050776 W EP 2012050776W WO 2012107263 A3 WO2012107263 A3 WO 2012107263A3
Authority
WO
WIPO (PCT)
Prior art keywords
transparent cover
optoelectronic component
producing
same
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/050776
Other languages
English (en)
French (fr)
Other versions
WO2012107263A2 (de
Inventor
Tobias Gebuhr
Simon Jerebic
Markus Pindl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to US13/983,853 priority Critical patent/US9018661B2/en
Publication of WO2012107263A2 publication Critical patent/WO2012107263A2/de
Publication of WO2012107263A3 publication Critical patent/WO2012107263A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Led Device Packages (AREA)
  • Laminated Bodies (AREA)

Abstract

Ein optoelektronisches Bauelement (100) weist ein Substrat (102) und eine lichtdurchlässige Abdeckung (106) auf, in der Kavität (108) ausgebildet ist. Auf dem Substrat (102) ist ein Halbleiterchip (104) angeordnet. Die lichtdurchlässige Abdeckung (106) überdeckt zumindest die vom Substrat (102) abgewandte Fläche des Halbleiterchips (104). Die lichtdurchlässige Abdeckung (106) weist eine größere Härte als Silikon auf.
PCT/EP2012/050776 2011-02-11 2012-01-19 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements Ceased WO2012107263A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/983,853 US9018661B2 (en) 2011-02-11 2012-01-19 Optoelectronic component and method for producing an optoelectronic component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011003969.4 2011-02-11
DE102011003969.4A DE102011003969B4 (de) 2011-02-11 2011-02-11 Verfahren zur Herstellung eines optoelektronischen Bauelements

Publications (2)

Publication Number Publication Date
WO2012107263A2 WO2012107263A2 (de) 2012-08-16
WO2012107263A3 true WO2012107263A3 (de) 2012-10-04

Family

ID=45524537

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/050776 Ceased WO2012107263A2 (de) 2011-02-11 2012-01-19 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Country Status (3)

Country Link
US (1) US9018661B2 (de)
DE (1) DE102011003969B4 (de)
WO (1) WO2012107263A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012200327B4 (de) * 2012-01-11 2022-01-05 Osram Gmbh Optoelektronisches Bauelement
US9680067B2 (en) * 2014-03-18 2017-06-13 GE Lighting Solutions, LLC Heavily phosphor loaded LED packages having higher stability
US9590148B2 (en) 2014-03-18 2017-03-07 GE Lighting Solutions, LLC Encapsulant modification in heavily phosphor loaded LED packages for improved stability
DE102014217986A1 (de) * 2014-03-27 2015-10-01 Tridonic Jennersdorf Gmbh LED Modul mit integrierter Sekundäroptik
TWI621810B (zh) * 2015-08-25 2018-04-21 鴻海精密工業股份有限公司 透鏡及具有該透鏡的發光裝置
DE102015116595A1 (de) * 2015-09-30 2017-03-30 Osram Opto Semiconductors Gmbh Bauelement mit einem Licht emittierenden Halbleiterchip
DE102016113487A1 (de) * 2016-07-21 2018-01-25 Osram Opto Semiconductors Gmbh Optoelektronisches bauteil
DE102017105235B4 (de) * 2017-03-13 2022-06-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit Verstärkungsschicht und Verfahren zur Herstellung eines Bauelements
WO2019043844A1 (ja) * 2017-08-30 2019-03-07 日本碍子株式会社 光学部品及び透明封止部材
US10680147B2 (en) * 2017-11-24 2020-06-09 Osram Oled Gmbh Method of producing a lighting device
DE102018111637A1 (de) 2018-01-26 2019-08-01 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip, verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement
CN110648981A (zh) * 2019-09-11 2020-01-03 王之奇 一种影像传感芯片封装结构及其封装方法
CN111640739B (zh) * 2020-05-29 2022-03-25 青岛歌尔智能传感器有限公司 光学传感器封装结构和电子设备
CN112928072B (zh) * 2021-01-29 2023-09-19 重庆两江卫星移动通信有限公司 一种氮化镓场效应晶体管抗辐照加固的封装器件
TWI809408B (zh) * 2021-06-01 2023-07-21 國立屏東科技大學 加熱輔助覆晶接合裝置
DE102021118354A1 (de) 2021-07-15 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verkapselung von seitenemittierenden laserpackages mittels vacuum injection molding

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816847A (en) * 1972-05-19 1974-06-11 Nippon Electric Co Light-sensible semiconductor device
US20030098651A1 (en) * 2001-11-29 2003-05-29 Ming-Der Lin Light-emitting device with improved reliability
US20050239227A1 (en) * 2002-08-30 2005-10-27 Gelcore, Llc Light emitting diode component
US20080023711A1 (en) * 2006-07-31 2008-01-31 Eric Tarsa Light emitting diode package with optical element
JP2008060166A (ja) * 2006-08-29 2008-03-13 Nichia Chem Ind Ltd 半導体装置およびその製造方法
DE102007046348A1 (de) * 2007-09-27 2009-04-02 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement mit Glasabdeckung und Verfahren zu dessen Herstellung
JP2010040986A (ja) * 2008-08-08 2010-02-18 Nec Lighting Ltd Ｌｅｄ装置
US20100181582A1 (en) * 2009-01-22 2010-07-22 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof

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Publication number Priority date Publication date Assignee Title
DE19625622A1 (de) 1996-06-26 1998-01-02 Siemens Ag Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US6798133B1 (en) * 1999-09-09 2004-09-28 Siemens Aktiengesellschaft Glass cover and process for producing a glass cover
JP5305594B2 (ja) 2004-02-20 2013-10-02 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 光電素子、多数の光電素子を有する装置および光電素子を製造する方法
JP3992059B2 (ja) * 2005-11-21 2007-10-17 松下電工株式会社 発光装置の製造方法
WO2007080803A1 (ja) * 2006-01-16 2007-07-19 Matsushita Electric Industrial Co., Ltd. 半導体発光装置
US7889421B2 (en) * 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
DE102007018837A1 (de) 2007-03-26 2008-10-02 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Lumineszenzdiodenchips und Lumineszenzdiodenchip
JP5199623B2 (ja) * 2007-08-28 2013-05-15 パナソニック株式会社 発光装置
TW200910648A (en) * 2007-08-31 2009-03-01 Isotech Products Inc Forming process of resin lens of an LED component
DE102007043183A1 (de) 2007-09-11 2009-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines solchen
DE102007059548A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Auskoppellinse für ein optoelektronisches Bauelement
DE102007046496B4 (de) 2007-09-28 2017-01-05 Osram Oled Gmbh Verfahren zur Herstellung einer mit zumindest einer Kavität versehenen Schutzverkapselung für zumindest ein elektronisches Bauteil
DE102008011153B4 (de) 2007-11-27 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen
DE102008016457A1 (de) 2008-03-31 2009-10-01 Osram Gesellschaft mit beschränkter Haftung Leuchtvorrichtung
DE102008021436A1 (de) 2008-04-29 2010-05-20 Schott Ag Optik-Konverter-System für (W)LEDs
US8482191B2 (en) 2008-08-11 2013-07-09 Osram Gesellschaft Mit Beschraenkter Haftung Conversion LED
TW201115779A (en) * 2009-10-26 2011-05-01 Gio Optoelectronics Corp Light emitting apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816847A (en) * 1972-05-19 1974-06-11 Nippon Electric Co Light-sensible semiconductor device
US20030098651A1 (en) * 2001-11-29 2003-05-29 Ming-Der Lin Light-emitting device with improved reliability
US20050239227A1 (en) * 2002-08-30 2005-10-27 Gelcore, Llc Light emitting diode component
US20080023711A1 (en) * 2006-07-31 2008-01-31 Eric Tarsa Light emitting diode package with optical element
JP2008060166A (ja) * 2006-08-29 2008-03-13 Nichia Chem Ind Ltd 半導体装置およびその製造方法
DE102007046348A1 (de) * 2007-09-27 2009-04-02 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement mit Glasabdeckung und Verfahren zu dessen Herstellung
JP2010040986A (ja) * 2008-08-08 2010-02-18 Nec Lighting Ltd Ｌｅｄ装置
US20100181582A1 (en) * 2009-01-22 2010-07-22 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof

Also Published As

Publication number Publication date
US20140014995A1 (en) 2014-01-16
DE102011003969B4 (de) 2023-03-09
DE102011003969A1 (de) 2012-08-16
US9018661B2 (en) 2015-04-28
WO2012107263A2 (de) 2012-08-16

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