WO2012111602A1 - Appareil et procédé de gravure humide - Google Patents

Appareil et procédé de gravure humide Download PDF

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Publication number
WO2012111602A1
WO2012111602A1 PCT/JP2012/053250 JP2012053250W WO2012111602A1 WO 2012111602 A1 WO2012111602 A1 WO 2012111602A1 JP 2012053250 W JP2012053250 W JP 2012053250W WO 2012111602 A1 WO2012111602 A1 WO 2012111602A1
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WO
WIPO (PCT)
Prior art keywords
substrate
wet etching
etching apparatus
pipe
peripheral portion
Prior art date
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Ceased
Application number
PCT/JP2012/053250
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English (en)
Japanese (ja)
Inventor
亮 村田
直義 山本
公一 柄谷
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Sharp Corp
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Sharp Corp
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Filing date
Publication date
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Publication of WO2012111602A1 publication Critical patent/WO2012111602A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching

Definitions

  • the present invention relates to a wet etching apparatus and a wet etching method.
  • the present invention relates to an apparatus for performing wet etching on a substrate such as mother glass for a liquid crystal panel.
  • a liquid crystal panel which is a component of a liquid crystal display device (LCD) has a structure in which a pair of glass substrates are opposed to each other with a predetermined gap secured.
  • glass substrates (mother glass) used in the manufacturing process of liquid crystal panels are becoming larger year by year.
  • wet etching is performed in the state of the glass substrate (mother glass) thus enlarged.
  • the wet etching in the liquid crystal panel production line is performed by spraying an etching solution on a glass substrate (mother glass) on which a metal film is formed, or immersing the glass substrate in the etching solution.
  • a wet etching apparatus is used to perform wet etching. With a wet etching apparatus, a metal film on a glass substrate can be wet etched, and a desired circuit pattern can be formed on the glass substrate (see Patent Document 1).
  • Recent mother glass for example, has a side exceeding 1 m (for example, from 1100 mm ⁇ 1300 mm (fifth generation substrate) to 2880 mm ⁇ 3130 mm (tenth generation substrate)). Accordingly, it is important to uniformly etch the entire surface of the substrate of such a large mother glass.
  • One method of uniformly etching the mother glass is to slide the substrate.
  • a wet etching apparatus having a function of sliding the substrate the entire mother glass is uniformly etched by moving the mother glass forward and backward with respect to the traveling direction.
  • a method for uniformly etching the mother glass by a sliding function of a spray pipe to which an etching solution is supplied.
  • an endpoint sensor that determines the etching state of a metal film or the like may be mounted by transmitting light through the mother glass and converting the amount of transmitted light into voltage.
  • FIG. 1 is a diagram showing a configuration of a wet etching apparatus (etching apparatus) 1000 disclosed in Patent Document 1.
  • a wet etching apparatus 1000 shown in FIG. 1 includes a transport means 103 for transporting a substrate (mother glass) 102 and a spray pipe 104 to which a spray nozzle 104a for spraying an etching solution onto the substrate 102 is attached.
  • the spray pipe 104 supplies an etching solution to the spray nozzle 104a.
  • the illustrated etching apparatus 1000 is provided with an end point sensor 105 that determines an etching state of an object to be etched.
  • the end point sensor 105 includes a projector 105b that emits light from below the substrate 102, and a light receiver 105a that receives light emitted from the projector 105b on the upper side of the substrate 102.
  • the inventor of the present application has found that the wet etching apparatus studied by the present inventor has the following problems.
  • the wet etching apparatus examined by the inventors of the present application is an apparatus that can wet-etch a mother glass of a 10th generation substrate (2880 mm ⁇ 3130 mm).
  • FIG. 2 schematically shows the upper surface of a 10th generation mother glass.
  • each panel region 115 in the mother glass 110 corresponds to a 40-inch liquid crystal panel.
  • a pattern as shown in FIG. 3 is included.
  • a wet etching apparatus is used.
  • a switching element for example, TFT
  • an upper surface of the array substrate 112 a surface on the liquid crystal layer side of the array substrate 112, that is, a surface facing the color filter substrate
  • a pixel electrode 146 is provided.
  • a source wiring 141 and a gate wiring 142 are provided around the switching element 144 and the pixel electrode 146 so as to form a lattice pattern.
  • the source wiring 141 and the gate wiring 142 are connected to the source electrode and the gate electrode of the switching element 144, respectively.
  • the pixel electrode 146 is made of, for example, ITO (indium tin oxide).
  • the pixel electrode 146 is formed in a rectangular shape, and in the example illustrated in FIG. 3, the pixel electrode 146 is formed in an elongated rectangular shape along the direction in which the source wiring 141 extends.
  • FIG. 4 shows an upper surface of the mother glass 110 obtained by performing wet etching on the metal film.
  • the mother glass 110 shown in FIG. 4 after wet etching, it was observed that the thickness of the metal wiring in the central portion 111a was thick and the thickness of the metal wiring in the peripheral portion 111c was thin. That is, it was observed that the etching rate with respect to the metal film increases toward the central part 111a, the intermediate part 111b, and the peripheral part 111c.
  • the wet etching apparatus like the wet etching apparatus 1000 shown in FIG. 1, spray nozzles are arranged evenly over the entire surface of the mother glass 110 so that the etching solution is sprayed evenly over the entire surface of the mother glass 110. It is composed.
  • the wet etching apparatus also has a function (such as a substrate sliding function) for uniformly etching the entire surface of the substrate. Even if such a function is used, the wet etching apparatus is compared with the metal wiring in the central portion 111a. Thus, it has not been possible to eliminate the tendency that the metal wiring in the peripheral portion 111c becomes thin.
  • the importance of uniformly wet-etching the entire substrate surface of the mother glass 110 (for example, 10th generation mother glass) using a wet etching apparatus is increasing. Therefore, it is required to solve the problem that the metal wiring in the peripheral portion 111c is formed thin.
  • the present invention has been made in view of such a point, and a main object thereof is to provide a wet etching apparatus capable of performing wet etching on the entire surface of a substrate as uniformly as possible.
  • a wet etching apparatus is a wet etching apparatus that performs wet etching on a substrate, and includes a spray nozzle that sprays an etching solution onto the substrate, and the spray nozzle is attached, and the etching solution is supplied to the spray nozzle.
  • the spray nozzle is arranged above the substrate, and the substrate includes a peripheral portion along an outer edge of the substrate and a central portion other than the peripheral portion, and the spray nozzle Are not arranged in the peripheral portion, and are arranged in a central portion other than the peripheral portion.
  • the spray pipe is composed of a main pipe and a branch pipe branched from the main pipe.
  • the main pipe in the spray pipe is one, a plurality of the branch pipes are connected to the one main pipe, and the plurality of branch pipes are At least three types of branch pipes having different lengths are provided.
  • a further branch pipe is connected to the branch pipe.
  • the spray pipe has one main pipe, and the one main pipe has a plurality of branch pipes connected in a radial pattern.
  • the spray pipe to which the spray nozzle is attached is disposed in a first processing tank including a transport roller capable of transporting the substrate, and the first processing tank includes a second A processing tank is connected, and the transport roller from the first processing tank extends in the second processing tank.
  • the peripheral portion is a portion within 1 ⁇ 4 from the outer edge of the substrate when the distance between the center point of the substrate and the outer edge of the substrate is 1.
  • the substrate is a mother glass for a liquid crystal panel.
  • the wet etching method according to the present invention is a wet etching method in which an etching solution is sprayed onto the substrate from above, the substrate is a mother glass for a liquid crystal panel, and the substrate is a peripheral edge along the outer edge of the substrate. And the central part other than the peripheral part, and the etching solution is not sprayed directly on the peripheral part and is sprayed on the central part other than the peripheral part.
  • the substrate is a mother glass for a liquid crystal panel, and a metal laminated film is formed on the mother glass as a material to be etched.
  • the spray nozzle for spraying the etching solution onto the substrate is not disposed at the peripheral portion of the substrate and is disposed at the central portion other than the peripheral portion. Therefore, compared with a structure in which the spray nozzles are evenly arranged above the substrate, the amount of the etching solution that contacts the peripheral portion of the substrate can be reduced, and the etching laser at the peripheral portion of the substrate can be reduced. it can. As a result, a wet etching apparatus that can wet-etch the entire surface of the substrate as uniformly as possible can be realized.
  • FIG. 1 is a perspective view showing a configuration of a wet etching apparatus 100 according to an embodiment of the present invention. 4 is a top view for explaining a peripheral edge portion 122 of a substrate 110.
  • FIG. 4 is a perspective view for explaining a peripheral edge portion 122 of a substrate 110.
  • FIG. 6 is a top view showing a modified example of the wet etching apparatus 100.
  • FIG. 6 is a top view showing a modified example of the wet etching apparatus 100.
  • FIG. 6 is a top view showing a modified example of the wet etching apparatus 100.
  • FIG. 5 is a top view schematically showing the configuration of the wet etching apparatus 100 according to the embodiment of the present invention.
  • FIG. 6 is a perspective view schematically showing the configuration of the wet etching apparatus 100 of the present embodiment.
  • the wet etching apparatus 100 of this embodiment is an apparatus that performs wet etching on the substrate 110.
  • the substrate 110 of this embodiment is, for example, a liquid crystal panel substrate, a PDP (plasma display panel) substrate, or the like.
  • the substrate 110 in the example shown in FIG. 5 is a mother glass for a liquid crystal panel (for example, 8th generation to 10th generation mother glass).
  • the wet etching apparatus 100 includes a spray nozzle 14 that sprays an etching solution onto a substrate 110 and a spray pipe 10 to which the spray nozzle 14 is attached.
  • the spray pipe 10 is a pipe that supplies an etching solution to the spray nozzle 14.
  • a suitable material for the material to be etched formed on the surface of the substrate 110 is selected.
  • a phosphoric acid solution of H 3 PO 4 : HNO 3 can be used as an etchant.
  • an etching solution suitable for the copper film (Cu film) is used, and an etching solution suitable for the material (for example, an insulating material or a semiconductor material) other than the metal is selected and used.
  • the spray nozzles 14 are arranged above the substrate 110.
  • the arrangement position of the spray nozzle 14 is represented by an “X” mark.
  • the spray nozzle 14 of the present embodiment can spray the etching solution onto the surface of the substrate 110 in a shower shape.
  • the substrate of the present embodiment includes a peripheral portion 122 along the outer edge 75 (75a, 75b) of the substrate 110 and a central portion 121 other than the peripheral portion.
  • the spray nozzle 14 of this embodiment is not arrange
  • the spray pipe 10 of the present embodiment is composed of a main pipe 11 and a branch pipe 12 branched from the main pipe 11.
  • the main pipe 11 is connected to an etching solution supply device (not shown) arranged outside.
  • the etching solution is supplied from the etching solution supply device to the main pipe 11, and then the etching solution is introduced from the main pipe 11 to the branch pipe 12.
  • the main pipe 11 and the branch pipe 12 have a cylindrical shape.
  • the main pipe 11 and the branch pipe 12 are made of stainless steel, and the main pipe 11 and the branch pipe 12 are connected to each other by welding.
  • a spray nozzle 14 is attached to the lower surface of the branch pipe 12 (downward along the vertical direction). Then, the etchant is sprayed from the spray nozzle 14 onto the surface of the substrate 110.
  • a plurality of branch pipes 12 are connected to one main pipe 11.
  • a plurality of branch pipes 12 (12a to 12e) extend from one main pipe 11 in the horizontal direction (here, in the left-right direction).
  • five branch pipes 12 (12a to 12e) are attached to the main pipe 11, and the branch pipe 12c located at the center extends the longest.
  • the branch pipes 12b and 12d located on the outer side extend the next longest, and the branch pipes 12a and 12e located on the outermost side extend the shortest.
  • One spray nozzle 14 is attached to each of the left and right sides of the branch pipe 12a, and the same applies to the branch pipe 12e. Further, two spray nozzles 14 are attached to the branch pipe 12b on the left and right sides, and the same applies to the branch pipe 12d. Three spray nozzles 14 are attached to the branch pipe 12c on the left and right. As described above, the spray nozzle 14 is not disposed in the region where the peripheral edge 122 of the substrate is located (outside the boundary 70), but is disposed in the region where the central portion 121 of the substrate is located (inside the boundary 70). Yes. Further, in the configuration example of the present embodiment, the spray nozzle 14 is disposed in a region inside the substantially elliptical boundary 72.
  • a substrate (mother glass) 110 to be wet-etched is placed on a transfer device (for example, a roller conveyor) 20.
  • the substrate 110 can be transported along the traveling direction 50 by the transport device 20.
  • the transport device 20 is installed in the liquid crystal panel manufacturing system (in the factory).
  • the substrate 110 placed at a predetermined position by the transfer device 20 is wetted by a shower of etchant (see arrow 15) discharged from the wet etching device 100 of the present embodiment.
  • a shower of etchant discharged from the wet etching device 100 of the present embodiment.
  • wet etching of a material for example, a metal film
  • the etching solution is substantially more than the peripheral edge portion 122.
  • the spray is concentrated on the range within the elliptical boundary 72.
  • the etching solution sprayed on the surface of the substrate 110 exists on the surface of the substrate 110 for a while, it subsequently flows out toward the peripheral edge 122 as indicated by an arrow 80. And the wet etching of the peripheral part 122 can be performed by this flowing-out etching liquid.
  • the etching rate of the peripheral portion 122 is compared with the central portion 121 (particularly, the central portion).
  • the etchant is sprayed evenly over the entire surface of the mother glass 110, the etchant from the spray nozzle 14 (see arrow 15) and the etchant flowing from the central part 121 (arrow 80) at the peripheral edge 122. Both) and wet etching is performed.
  • the material to be etched for example, a metal film
  • the etching solution for example, a laminated film (for example, a metal laminated film.
  • a laminated film for example, a metal laminated film.
  • Ti / Cu / Ti or Mo / Al / Mo it is necessary to select an appropriate etching solution.
  • wet etching can be performed on the laminated film, but it is difficult to control the etching rate and it may be more difficult to adjust the in-plane uniformity.
  • the inventor of the present application has a configuration in which the spray nozzle 14 is not disposed in the peripheral portion 122 in the wet etching apparatus 100 of the present embodiment.
  • the wet etching of the peripheral portion 122 is performed by etching an etching solution (see arrow 80) flowing from the central portion 121 to the peripheral portion 122.
  • the spray nozzle 14 is selectively disposed in the central portion 121 without being disposed in the peripheral portion 122, the in-plane uniformity of the wet etching of the substrate 110 can be improved.
  • a spray nozzle in addition to not arranging the spray nozzle 14 at the peripheral portion 122, a combination of a material to be etched (for example, a metal film) and an etching solution, a spray nozzle It is desirable to select a suitable one for the arrangement of the nozzle 14, the flow rate of the etching solution from the spray nozzle 14, the etching time, and the like.
  • the peripheral edge 122 of the substrate 110 is a portion having a higher etching rate than other portions (center portion), specifically, a portion along the outer edge 75 (75a, 75b) of the substrate 110.
  • the magnitude of the etching rate between the peripheral portion 122 and the central portion 121 of the substrate 110 may be changed continuously in a gradation, so that the region shown in FIG. Is possible.
  • FIG. 7 is a top view of the substrate (mother glass) 110.
  • the peripheral edge 122 is a portion within 1/4 of the outer edge 75 (75a, 75b). be able to.
  • the central part 121 other than the peripheral part 122 is distinguished from the first central part (or central part) 121a and the second central part (or intermediate part) 121b, and the arrangement of the spray nozzle 14 and the etching liquid from the spray nozzle 14 are distinguished. It may be one of the conditions for setting the flow rate.
  • the ratio (or the number) of the spray nozzles 14 disposed in the upper region of the first central portion 121a is designed to be larger than the ratio (or the number) of the spray nozzles 14 disposed in the upper region of the second central portion 121b. Can be adopted.
  • the spray nozzle 14 that sprays the etching solution onto the substrate 110 is not disposed at the peripheral portion 122 of the substrate 110 and is disposed at the central portion 121 other than the peripheral portion. Has been. Therefore, compared with the structure in which the spray nozzles 14 are evenly arranged above the substrate 110, the amount of the etchant that contacts the peripheral edge 122 of the substrate 110 can be reduced, and the etching at the peripheral edge 122 of the substrate 110 can be reduced. The laser can be lowered.
  • wet etching apparatus 100 that can wet-etch the entire surface of the substrate as uniformly as possible can be realized.
  • FIG. 8 shows a configuration of a substrate processing apparatus 200 including the wet etching apparatus 100 of the present embodiment.
  • the spray pipe 10 to which the spray nozzle 14 is attached is disposed in a first processing tank 30 ⁇ / b> A including a transport roller (transport apparatus) 20 that can transport the substrate 110.
  • a second processing tank 30B is connected to the first processing tank 30A. In the second treatment tank 30B, the conveyance roller 20 from the first treatment tank 30A is extended.
  • the first treatment tank 30A and the second treatment tank 30B in the present embodiment each have a box shape.
  • the first treatment tank 30A has an opening 31A on the second treatment tank 30B side, while the second treatment tank 30B has an opening 31B on the first treatment tank 30A side.
  • the openings 31A and 31B have a shape through which the substrate 110 can pass, and a substrate conveyor including the transport rollers 20 is provided through the first processing tank 30A and the second processing tank 30B.
  • the transport roller 20 is rotatable as indicated by an arrow 55, and the substrate 110 can be moved on the transport roller 20 from the second processing tank 30B to the first processing tank 30A along the rotation (arrow 50). ).
  • An opening 32 is provided on the upstream side of the second processing tank 30B, and an opening 34 is provided on the downstream side of the first processing tank 30A.
  • the substrate conveyor composed of the transport rollers 20 extends both to the upstream side of the second processing tank 30B and to the downstream side of the first processing tank 30A.
  • the first treatment tank 30A of the present embodiment is the wet etching apparatus 100 as described above. That is, when the substrate 110 is stopped at a predetermined position in the first processing tank 30 ⁇ / b> A, the spray nozzle 14 is not disposed at the peripheral edge 122 of the substrate 110 and is disposed at the central portion 121. After the wet etching for a predetermined time is performed in the first treatment tank 30A, the substrate 110 rides on the flow of the transport roller 20 (arrow 50) and moves downstream. Then, the substrate 110 is subjected to substrate processing in the next step (post-step).
  • the second treatment tank 30B of the present embodiment is a place where a pretreatment process of the wet etching apparatus 100 is performed.
  • a process of cleaning the substrate 110 or adjusting the wettability of the substrate 110 can be performed.
  • a chemical solution is sprayed onto the substrate 110 from the nozzle 24 of the second processing tank 30B.
  • the duct 35 is provided in the 1st processing tank 30A and the 2nd processing tank 30B, and the air in each processing tank can be sucked out.
  • a pair of liquid curtain devices 26 are disposed in the boundary region between the first treatment tank 30A and the second treatment tank 30B.
  • the liquid curtain device 26 is an air knife that blows out air to create an air wall. The movement of the floating mist can be blocked by discharging gas (air) from the liquid cutting curtain device (air knife) 26.
  • the second processing tank 30B is connected to the upstream side of the first processing tank 30A including the spray pipe 10 of the present embodiment. It is also possible to connect the treatment tanks.
  • a processing tank not only a wet type substrate processing tank but also a dry type substrate processing tank (for example, a processing tank for drying) can be used.
  • the main pipe 11 is composed of a plurality of pieces (11a, 11b).
  • branch pipes 12 (12a to 12e) extend from each of the two main pipes 11 (11a, 11b).
  • the spray nozzle 14 is attached to the branch pipe 12.
  • the first branch pipe 12 is connected to the main pipe 11, and the second branch pipe 13 (13 a, 13 b) is connected to the first branch pipe 12.
  • the spray nozzle 14 is attached to the main pipe 11, the first branch pipe 12, and the second branch pipe 13.
  • a branch pipe 12 is connected to the main pipe 11, and an oblique pipe 16 extending obliquely is connected to the main pipe 11.
  • the spray nozzle 14 is attached to a main pipe 11, a branch pipe 12, and an oblique pipe (oblique branch pipe) 16.
  • the branch pipes 12 and the diagonal pipes (oblique branch pipes) 16 extend the pipes radially.

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)

Abstract

La présente invention a pour objet d'exécuter une gravure humide de toute la surface d'un substrat aussi uniformément que possible. L'invention concerne un appareil (100) de gravure humide destiné à exécuter une gravure humide sur un substrat (110) et muni de buses (14) de pulvérisation destinées à pulvériser un liquide de gravure sur le substrat (110), ainsi que de conduites (10) de pulvérisation sur lesquelles sont montées les buses (14) de pulvérisation et qui servent à amener le liquide de gravure jusqu'aux buses (14) de pulvérisation. Lesdites buses (14) de pulvérisation sont disposées au-dessus du substrat (110) et ledit substrat (110) comporte une section (122) de bord circonférentiel le long du bord extérieur (75) du substrat (110) et une section centrale (121) qui ne comprend pas la section (122) de bord circonférentiel. Les buses (14) de pulvérisation ne sont pas disposées au niveau de la section (122) de bord circonférentiel, mais sont disposées au niveau de la section centrale (121) qui n'inclut pas la section (122) de bord circonférentiel.
PCT/JP2012/053250 2011-02-17 2012-02-13 Appareil et procédé de gravure humide Ceased WO2012111602A1 (fr)

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JP2011-032162 2011-02-17
JP2011032162 2011-02-17

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WO2012111602A1 true WO2012111602A1 (fr) 2012-08-23

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014091561A1 (fr) * 2012-12-11 2014-06-19 富士技研工業株式会社 Procédé pour le renouvellement de solution chimique utilisée pour un dispositif pour la gravure de verre à cristaux liquides, buse pour le renouvellement de solution chimique et solution chimique pour renouvellement
CN113387587A (zh) * 2020-03-12 2021-09-14 全鸿精研股份有限公司 玻璃加工设备与方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63121678A (ja) * 1986-11-11 1988-05-25 Dainippon Screen Mfg Co Ltd クロム被膜のエツチング方法及びエツチング装置
JP2005089819A (ja) * 2003-09-17 2005-04-07 Sanyo Electric Co Ltd エッチング装置
JP2010073875A (ja) * 2008-09-18 2010-04-02 Hitachi Ltd 電極形成装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63121678A (ja) * 1986-11-11 1988-05-25 Dainippon Screen Mfg Co Ltd クロム被膜のエツチング方法及びエツチング装置
JP2005089819A (ja) * 2003-09-17 2005-04-07 Sanyo Electric Co Ltd エッチング装置
JP2010073875A (ja) * 2008-09-18 2010-04-02 Hitachi Ltd 電極形成装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014091561A1 (fr) * 2012-12-11 2014-06-19 富士技研工業株式会社 Procédé pour le renouvellement de solution chimique utilisée pour un dispositif pour la gravure de verre à cristaux liquides, buse pour le renouvellement de solution chimique et solution chimique pour renouvellement
JP5986223B2 (ja) * 2012-12-11 2016-09-06 株式会社トーア電子 液晶ガラスのエッチング装置に用いる薬液の更新方法、薬液更新用ノズル及び更新用薬液
CN104837784B (zh) * 2012-12-11 2017-03-01 东亚电子株式会社 用于液晶玻璃蚀刻装置的药液的更新方法、药液更新用喷嘴及更新用药液
CN113387587A (zh) * 2020-03-12 2021-09-14 全鸿精研股份有限公司 玻璃加工设备与方法

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